Research Focus of the Nanoelectronics Laboratory
The research of the Nanoelectronics Laboratory focuses on two-dimensional (2D) monolayer semiconductors, including graphene, boron nitride, and transition metal dichalcogenides. We investigate the fundamental properties and applications of these 2D monolayer semiconductors in five different directions: materials, physics, devices, fabrication processes, and neuromorphic chips for AI applications.
1. Materials: This includes monolayer single crystals, bilayer single crystal rotation, vertical heterostructures, lateral heterostructures, and 2D monolayer semiconductors with carrier doping and magnetic doping.
2. Physics: Our research covers Raman spectroscopy, photoluminescence, high-resolution electron microscopy, electron energy loss spectroscopy, low-temperature electrical transport, and valley Hall effect studies.
3. Electronic Devices: We focus on fundamental aspects such as metal-semiconductor contacts, heterojunctions, dielectric screening, and devices including field-effect transistors (FETs), optically controlled FETs, high-frequency transistors, and photodetectors. Our work also extends to basic logic gates and circuits, such as low-noise amplifiers, mixers, and frequency multipliers.
4. Novel Semiconductor Fabrication Technologies: Our primary development efforts focus on novel chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. In CVD, we collaborate with industry to develop the latest “neutral particle beam chemical vapor deposition.” For ALD, we have established a three-party research platform with two domestic and international companies to develop “selective deposition” technology. Additionally, we apply these techniques to grow monolayer single-crystal 2D materials.
5. Neuromorphic chips for AI applications
Our team recently co-developed a reconfigurable transistor and memory device based on a 2D heterostructure using photoinduced trapping mechanisms with NCHU teams. This work, published in Nature Electronics, integrates neuromorphic computing capabilities and can dynamically switch between transistor and memory modes. It offers potential for simplifying circuit design by reducing the number of transistors needed for logic operations like AND, OR, NAND, NOR, and XOR gates. Moreover, these RFETs can emulate synaptic functions, making them promising for edge computing and AI applications like pattern recognition and intelligent data processing
Over the years, our lab has successfully developed many unique material growth and device fabrication techniques for 2D monolayer semiconductors. We have established substantial collaborations and personnel exchanges with various international research institutions. We welcome interested students to join our research team.