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[1]
X. Yu, H. Wang, T. Yen, X. Yang,
S. Hsu, F. Yang, J. Zhang, Y. He, C. Song, Y. Huang, J. Zhou, “A 5.8-GHz GaN high-power rectifier with harmonic-compression
network for space-based wireless power transmission,” accepted for IEEE
Journal on Wireless Power Technologies.
[2]
J. Hsu, P. Chen, M.
Chen, S. Hsu, T. Chang, C. Lien, S. Chou, B. Xie, T. Kuo, J. Lin, Y. Lee,
C. Lin, H. Huang, “Overcoming
size effect with low-thermal-budget supercritical fluid oxygen treatment
for HZO-based ferroelectric capacitors,” IEEE Trans. Electron
Devices, vol. 73, no. 4,
pp. 1802-1808, April 2026.
[3] M. K.
Chaubey, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “An
ultrawideband cryogenic LNA in 40-nm CMOS for multiple spin/superconducting
qubit readout,” IEEE
Microwave and Wireless Technology Lett., vol. 56,
no. 3, pp. 419-422, March 2026.
[4]
X. Yu, H. Wang, Y.
Lin, X. Yang, Y. Liu, S. Hsu, T. Yen, I. Mitrovic, Y. Huang, J. Zhou, Y.
He, and C. Song, “High-power
dual-band RF rectifier with multifocus GaN techniques for WPT applications,”
IEEE Trans. Microwave Theory Techn., vol. 74, no. 3, pp. 3006-3019, March 2026.
[5]
Y. Shang, K. Chuang,
Y. Chang, H. Lin, D. Chang, and S. Hsu*, “29%-fractional
bandwidth X-band continuous-mode Class-F/F-1 GaN MMIC power
amplifiers with broadband matching network design,” IEEE Trans.
Microwave Theory Techn., vol.
74, no. 1, pp. 264-274, Jan. 2026.
[6]
Y.
Liu, P. Y. Huang, C. Chuang, S. H. Li, H. Wang, T. L. Lee, S. K. K. Huang,
S. Hsu, and R. K. Y. Wong, “2DHG in
AlGaN back-barrier for substrate loss suppression and RF performance
enhancement in GaN-on-Si HEMTs,” IEEE Electron Device Letters,
vol. 46, no. 8, pp. 1313-1316, Aug. 2025.
[7] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “A
43.4-dB gain 7.6-mW 197.5% bandwidth double noise-canceling cryogenic LNA
using gain peaking technique for multiple spin qubit readout,” IEEE
Trans. Circuits and Systems II, vol. 72, no. 5, pp. 638-642, May 2025.
[8] J.
Hsu, S. Hsu, T. Chang, C. Lien, T. Kuo, C. Yeh, J. Lin, Y. Lee, C. Lin, I.
Huang, “Investigating
the arc-shaped kink drain voltage of drain current with capacitance-voltage
measurement method in GaN HEMTs,” IEEE Trans. Device and Materials
Reliability, vol. 24, no. 4, pp. 544-548, Dec. 2024.
[9] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “A
0.01-to-2.6-GHz two-fold current reuse dual noise-canceling LNA achieving
6.8-K noise temperature for quantum applications,” IEEE Trans. Circuits and Systems II, vol. 71, no. 5, pp. 2504-2508,
May 2024.
[10] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “Ultracompact
inductorless noise-canceling LNAs in 40-nm CMOS achieving 2.2-K noise
temperature for qubit readout,” IEEE
Trans. Microwave Theory Techn., vol. 72, no. 4, pp.
2168-2178, Apr.2024.
[11] J. Wang, Y. Huang, Y. Chang, Y. Liu, D.
Chang, and S. Hsu*, ”A K-band MMIC
cross-coupled oscillator with high output power in 0.25-mm GaN HEMT,” IEEE Microwave and Wireless Technology Lett., vol. 33, no. 8,
pp. 1211-1214, Aug. 2023.
[12] S. Hong and S. Hsu*, “An inductorless
20-Gbaud overshoot suppression modulator driver using interleave frequency
variant feedback in 90nm CMOS,” IEEE
Trans. Microwave Theory Techn., vol. 71, no. 3, pp. 1044-1054, March 2023.
[13] C. Lin, S. Hong, and S. Hsu*, “A
40-Gb/s modulator driver using cascade swing compensation in 90 nm CMOS,“
IEEE Microwave and Wireless Components Lett., vol. 32,
no. 9, pp. 1103-1106, Sept. 2022.
[14] S. D. Joseph, Y. Huang*, S. Hsu*, A.
Alieldin, and C. Song, “ Second harmonic exploitation for
high-efficiency wireless power transfer using duplexing rectenna,” IEEE Trans. Microwave Theory Techn., vol. 69, no. 1, pp. 482-494, Jan. 2021.
[15] S. D. Joseph, Yi Huang*, and S. H. Hsu*, “Transmission
lines-based impedance matching technique for broadband rectifier,” IEEE Access, vol. 8, pp. 4665-4672,
Dec. 2020.
[16] S. D. Joseph, S. Hsu*, A. Alieldin, C.
Song, Y. Liu, and Y. Huang*, “High-power
wire bonded GaN rectifier for wireless power transmission,” IEEE Access, vol. 9, pp.
82035-82041, Apr. 2020.
[17] Y. Liu, C. Li, W. Hsu, C. Chuang, J. Liu,
and S. Hsu, “High-frequency
AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates,” Jpn. Journal of Applied Physics, 59,
SGGD11, Feb. 2020.
[18] H. Wang, C-H Li, Y. Liu, S. D. Joseph, Y.
Huang, and S. Hsu, “Low
turn-on voltage and high breakdown GaN Schottky barrier diodes for RF
energy harvesting applications,” Jpn.
Journal of Applied Physics, 59, SGGD12, Feb. 2020.
[19] S. Li, S. Hsu*, K. Chen, C. Lin, S. Chen,
J. Zhang, and P. Tzeng, “Fully
symmetric 3-D transformers with through-silicon via IPD technology for RF
applications,” IEEE Trans. Compon.
Packag. manuf. Technology, vol. 9, no. 11, Nov. 2019.
[20] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “A low-loss fully integrated
CMOS active probe for gigahertz conducted EMI test,” IEEE Trans. Microwave Theory Techn., vol. 67, no. 4, pp. 1652-1660, Apr. 2019.
[21] S. Li, S. Hsu*, J. Zhang, and K. Huang, “Design of
a compact GaN MMIC Doherty power amplifier and system level analysis With
X-Parameters for 5G communications,” IEEE Trans. Microwave Theory Techn., vol. 66, no. 12, pp. 5676-5684, Dec. 2018.
[22] J. Liu and S. Hsu*, “A miniature
300-MHz resonant DC-DC converter with GaN and CMOS integrated in IPD
technology,” IEEE Trans. Power
Electronics, vol. 33, no. 11, pp. 9656-9668, Nov. 2018.
[23] P. Wang, G. Su, Y. Chang, D. Chang, and S.
Hsu*, “A
transformer-based current-reuse QVCO with an FoM up to -200.5 dBc/Hz,” IEEE Trans. Circuits and Systems II, vol.
65, no. 6, pp. 749-753, June 2018.
[24] Y. Li, P. Chiu, K. Li, D. Thomson, G.
Reed, and S. Hsu*, “A 40-Gb/s
4-Vpp differential modulator driver in 90 nm CMOS,” IEEE Microwave and
Wireless Components Lett., vol. 28, no. 1,
pp. 73-75, Jan. 2018.
[25] Y. Lin and S. Hsu*, “A Sierpinski
space-filling clock tree using multiply-by-3 fractal-coupled ring
oscillators,” IEEE J. Solid-State
Circuits, vol. 52, no.
11, pp. 2947-2962, Nov. 2017.
[26] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “Wideband
conducted electromagnetic emission measurements using IPD chip probes,”
IEEE Trans. Microwave Theory Techn., vol. 64, no. 11, pp. 4063-4070, Nov. 2016.
[27] C. Tsou, H. Kang, Y. Lian, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for RF applications,”
IEEE Trans. Electron Devices, vol.
63, no. 11, pp. 4218-4225, Nov. 2016.
[28] C. Tsou, K. Wei, Y. Lian, and S. Hsu*, “2.07-kV AlGaN/GaN
Schottky barrier diodes on silicon with high Baliga’s figure-of-merit,” IEEE Electron Device
Letters., vol. 37, no. 1, pp.
70-73, Jan. 2016.
[29] C.
Lee, H. Hsieh, and S. Hsu*, “A low-power
miniature 20-Gb/s passive/active hybrid equalizer in 90nm CMOS,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 10, pp. 669-671, Oct. 2015.
[30] C.
Tsou, C. Lin, Y. Lian, and S. Hsu*, “101-GHz InAlN/GaN
HEMTs on silicon with high Johnson’s figure-of-merit,” IEEE Trans. Electron Devices, vol.
62, no. 8, pp. 2675-2678, Aug. 2015.
[31] K.
Tan, T. Chu, and S. Hsu*, “A
76.2-89.1 GHz phase-locked loop with 15.6% tuning range in 90nm CMOS for
W-band applications,” IEEE Microwave and
Wireless Components Lett., vol. 25, no.
8, pp. 538-540, Aug. 2015.
[32] K.
Tan, A. Lo, T. Chu, and S. Hsu*, “A K-band
reconfigurable pulse-compression automotive radar transmitter in 90 nm
CMOS,” IEEE Trans. Microw. Theory
Techn., vol. 63, no. 4, pp. 1380-1387, Apr. 2015.
[33] Y.
Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “Drain
E-field manipulation in AlGaN/GaN HEMTs by Schottky extension technology,”
IEEE Trans. Electron Devices,
vol. 62, no. 2, pp. 519-524, Feb. 2015.
[34] F.
Chen, M. Kao, Y. Hsu, J. Wu, C. Chiu, S. Hsu, and M. F. Chang, “A 10-Gb/s low jitter single-loop
clock and data recovery circuit with rotational phase frequency detector,”
IEEE Trans. Circuits and Systems I
(TCAS I), vol. 61, no. 11, Nov. 2014.
[35] G.
Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y. Hu, D. J.
Thomson, K. Li, P. Wilson, S. Chen, and S. Hsu, “Recent
breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics, vol. 3, issue 4-5,
pp. 229-245, Aug. 2014.
[36] C.
Yeh, Y. Lain, Y. Chiu, C. Liao, D. Moyano, S. Hsu, and P. Chiu, “Gigahertz
flexible graphene transistors for microwave integrated circuits,” ACS
nano, 2014, 8(8), pp. 7663-7670, July 2014 (2014 impact factor: 12.033)
[37] S.
Huang, J. Wang, C. Lan, S. Hsu*, S. Li, P. Tseng, C. Lin, and S. Sheu, “An ultra compact millimeter-wave
VCO in 3D IC technology,” IEEE
Microwave and Wireless Components Lett, vol. 24, no. 4, Arp. 2014.
[38] C.
Hsiao, T. Su, and S. Hsu*, “CMOS
distributed amplifiers using gate-drain transformer feedback technique,”
IEEE Trans. Microwave Theory Tech.,
vol. 61, no. 8, pp. 2901-2910, Aug. 2013.
[39] Y.
Lian, Y. Lin, J. Yang, C. Cheng, and S. Hsu*, “AlGaN/GaN Schottky
barrier diodes on silicon substrates with selective Si diffusion for low
onset voltage and high reverse blocking,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 981-983, Aug.
2013.
[40] C.
Hsieh, J. Hwang, T. Chang, J. Li, S. Chen, L. Mao, L. Tsai, Y. Chueh, P.
Lyu, and S. Hsu, “Enhanced
mobility of organic thin film transistors by water absorption of collagen
hydrolysate gate dielectric,”
Applied Physics Lett. 103, 023303 (2013)
[41] Y.
Hsu, Y. Lin, C. Chiu, J. Wu, S. Hsu, F. Chen, M. Kao, W. Lai, and Y. Hsu, “A
low propagation delay load balanced 4 x 4 switch fabric IC in 0.13 mm CMOS technology,” IEEE Trans. VLSI, vol. 21, no. 8,
pp. 1481-1495, Aug. 2013.
[42] Y.
Lin, Y. Lian, J. Yang, H. Lu, Y. Huang, C. Cheng, and S. Hsu*, “Contact
engineering of GaN-on-silicon power devices for breakdown voltage
enhancement,” Semiconductor
Science and Technology, vol. 28, 074018, July 2013. (invited)
[43] L.
Mao, J. Hwang, T. Chang, C. Hsieh, L. Tsai, Y. Chueh, S. Hsu, P. Lyu, and
T. Liu, “Pentacene
organic thin-film transistors with solution-based gelatin dielectric,” Organic
Electronics, vol. 14, issue 4, pp. 1170-1176, Apr. 2013.
[44] M.
Tsai, S. Huang, and S. Hsu, “ESD
protection design for V-band low-noise amplifier using RF junction
varactors,” Jpn. Journal of Applied Physics,
04CE09, 1-6, March 2013.
[45] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “Design of
60-GHz low-noise amplifiers with low NF and robust ESD protection in 65-nm
CMOS,” IEEE Trans. Microwave Theory
Tech., vol. 61, no. 1, pp. 553-561, Jan. 2013.
[46] W.
Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel low gate-count pipeline
topology with multiplexer-flip-flops for serial link,” IEEE Trans. Circuits and Systems I (TCAS
I), vol. 59, no. 11, pp. 2600-2610, Nov. 2012.
[47] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “A 17.5-26
GHz low-noise amplifier with over 8-KV ESD protection in 65-nm CMOS,” IEEE Microwave
and Wireless Component Lett. vol. 22, no. 9, pp. 483-485,
Sep. 2012.
[48] Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for high breakdown
voltage and low leakage current,” IEEE
Electron Device Letters, vol. 33, no. 7, pp. 973-975, July 2012.
[49] P. Chang, S. Su, S. Hsu*, W. Cho, and J. Jin, “An
ultra-low-power transformer-Feedback 60 GHz low-noise amplifier in 90 nm
CMOS,” IEEE
Microwave and Wireless Component Lett. vol. 22,
no. 4, pp. 197-199, Apr.
2012.
[50] M.
Tsai and S. Hsu*, “A
V-Band Low-Noise Amplifier Co-Designed with ESD Network in 65-nm RF CMOS,”
Microwave Optical Technology Letters,
vol. 54, no. 3, pp. 820-822,
March 2012.
[51] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, “ESD-protected
K-band low-noise amplifiers using RF junction varactors in 65-nm CMOS,”
IEEE Trans. Microwave Theory Tech., vol. 59, no. 12, pp. 3455-3462, Dec.
2011.
[52] C. Hsiao, S. Hsu*, and D. Chang, “A compact V-band
bandpass filter in IPD technology,” IEEE
Microwave and Wireless Component Lett. vol. 21, no. 10, pp. 531-533,
Oct. 2011.
[53] M. Tsai and S. Hsu* “A
24-GHz low-noise amplifier using RF junction varactors for noise
optimization and CDM ESD protection in 90-nm
CMOS,” IEEE Microwave and
Wireless Component Lett., vol. 21, no. 7, pp. 374-376, July 2011.
[54] W. Cho and S. Hsu*, “An
ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology,”
IEEE Microwave and Wireless Component Lett., vol. 20,
no. 12, pp. 681-683, Dec. 2010.
[55] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou , "A multi-ESD-path
low-noise amplifier with a 4.3-A TLP current level in 65-nm CMOS,"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4004-4011, Dec.
2010.
[56] P. Chang and S. Hsu*, "A
compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-μm
CMOS," IEEE Trans.
Microwave Theory Tech., vol. 58, no. 10, pp. 2575-2581, Oct. 2010.
[57]
W.
Chang, K. Tan, and S. Hsu*, "A 56.5-72.2
GHz transformer-injection Miller frequency divider in 0.13 μm CMOS,"
IEEE Microwave and Wireless Component Letters, vol. 20, no. 7, pp. 393-395, July,
2010.
[58]
T.
Lin, P. Chang, H. chiu, M. Hong, J. Kwo, Y. Lin, and S. Hsu, "DC and RF
characteristics of self-aligned inversion-channel In0.53Ga0.47As
MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3)
as gate dielectrics," J.
Vacuum Science and Technology B, 28(3),
May/Jun, C3H14 (2010).
[59] Y. Chang, W. Chang, Y. H. Chang, J.
Kwo, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, "Drain
current enhancement and negligible current collapse in GaN MOSFETs with
atomic-layer-deposited HfO2 as a gate dielectric," J. Microelectronic Engineering, 87(2010) 2042-2045.
[60]
Y.
Lin, Y. Lian, and S. Hsu*, "AlGaN/GaN
HEMTs with low leakage current and high on/off current ratio," IEEE Electron Device Letters, vol. 31, no. 2, pp. 102-104, Feb.
2010.
[61]
Y.
Lin, J. Wu, C. Chan, S. Hsu*, C. Huang, and T. Lee, “Square-gate
AlGaN/GaN HEMTs with improved trap-related characteristics,” IEEE Trans. Electron Devices,
vol 56, no. 12, pp. 3207-3211, Dec. 2009.
[62]
M.
Tsai, S. Hsu*, F. Hsueh, C. Jou, S. Chen, and M. Song, “A wideband low noise
amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS,” IEEE Microwave and Wireless
Component Letters, vol. 19, no. 11, pp. 734-736, Nov. 2009.
[63]
J. Jin
and S. Hsu*, “A K-band low-noise
amplifier in 0.18-μm CMOS technology for sub-1-V operation,” Microwave
Optical
Technology Letters, vol. 51, no. 9, pp. 2202-2204, 2009.
[64]
M.
Kao, J. Wu, C Lin, F. Chen, C. Chiu, and S. Hsu, “A 10-Gb/s CML I/O circuit for
backplane interconnection in 0.18-μm CMOS technology,” IEEE
Trans. VLSI Systems, vol. 17, no. 5, pp. 688-696, May 2009.
[65]
Y. Wu,
S. Hsu*, K. Tan, and Y. Su, "Substrate noise
coupling reduction in LC voltage-controlled oscillators," IEEE
Electron Device Letters, vol. 30, no. 4, pp. 383-385, Apr. 2009.
[66]
Y.
Wei, S. Hsu*, and J. Jin, "A
low-power low-noise amplifier for K-band applications," IEEE
Microwave and Wireless Component Lett., vol. 19, no. 2, pp. 116-118, Feb. 2009.
[67]
J.
Jin and S. Hsu*, "A
75-dBΩ 10-Gb/s transimpedance amplifier in 0.18-μm CMOS technology,"
IEEE Photon. Tech. Lett., vol. 20, no. 24, pp. 2177-2179, Dec. 2008.
[68]
J. Jin
and S. Hsu*, "A
miniaturized 70-GHz broadband amplifier in 0.13-µm CMOS technology," IEEE
Trans. Microwave Theory Tech., vol. 56, no. 12, pp. 3086-3092, Dec.
2008.
[69]
C.
Chan, S. Chen, M. Tsai, and S. Hsu*, "Wiring effect optimization
in 65-nm low-power NMOS," IEEE Electron Device Letters, vol. 29, no. 11, pp. 1245-1248, Nov. 2008.
[70]
C.
Chan, Y. Huang, J. Chen, S. Hsu*, and Y. Juang, "STI-to-gate
distance effects on flicker noise characteristics in 0.13-µm CMOS," J. Solid-State Electronics, vol. 52, pp. 1182-1187, 2008.
[71]
J. Jin
and S. Hsu*, “A 40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,” IEEE J.
Solid-State Circuits, vol. 43, no. 6, pp. 1449-1457, June, 2008.
[72]
J.
Jin, S. Hsu*, T. Yeh, M. Yang, and S. Liu, “Fully analytical
modeling of Cu interconnects up to 110 GHz,” Jpn. Journal of Appl. Physics, vol. 47, no. 4, pp. 2473-2476, Apr. 2008.
[73]
J.
Jin and S. Hsu*, “A 1-V,
45-GHz balanced amplifier with 21.5-dB gain using 0.18-μm CMOS technology,”
IEEE Trans. Microwave Theory Tech., vol. 56, no. 3, pp. 599-603, March
2008.
[74]
J.
Jin and S. Hsu*, “A 0.18-μm
CMOS balanced amplifier for 24-GHz applications,” IEEE J.
Solid-State Circuits, vol. 43, no. 2, pp. 440-445, Feb. 2008.
[75]
C.
Chan, Y. Lin, J. Jin, S. Hsu*, Y. Huang, and Y. Juang, “Impact
of STI effect on flicker noise in 0.13-µm RF N-MOSFETs,” IEEE Trans.
Electron Devices, Vol. 54, No.
12, pp. 3383-3392, Dec., 2007.
[76]
H.
Lin, S. Hsu*, C. Chan, and Y. Lin, “A wide locking-range
frequency divider for LMDS applications,” IEEE Trans. Circuits
and Systems II, Vol. 54, No. 9, pp. 750-754, Sep. 2007.
[77]
Y.
Lin, S. Koa, C. Chan, S. Hsu*, H. Lee, and S. Gwo, "High current density
InN/AlN heterojunction field-effect transistor with a SiNx gate
dielectric layer," Applied Physics Letters 90, 142111, 2007.
[78]
C.
Chan, T. Lee, S. Hsu*, L. Chen, and Y. Lin, “Impacts of
gate recess and passivation on AlGaN/GaN HEMTs,” Jpn. Journal of
Appl. Physics, Vol. 46, No. 2,
pp. 478-484, Feb. 2007.
[79]
T.
Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M. Hong, “Interfacial trap
characteristics in depletion mode GaAs MOSFET’s,” Journal of Crystal Growth,
Vol. 301-302, April 2007, pp. 1009-1012.
[80]
Y.
Lin, S. Hsu*, J. Jin, and C. Chan, “A
3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused
technique,” IEEE Microwave and Wireless Component
Letters, vol. 17, No. 3, Mar. 2007.
[81]
J.
Jin, S. Hsu*, M. T. Yang, and S. Liu, “Low-loss
differential semi-coaxial interconnects in CMOS process,” IEEE Trans.
Microwave Theory Tech., vol. 54, no. 12, pp. 4333-4340,
Dec. 2006.
[82]
S.
Hsu*, H. Zhu, “W-band
multiple-ring resonator by standard 0.18-um CMOS technology,” IEEE
Microwave and Wireless
Component Lett., pp. 832-834, Dec. 2005.
[83]
J.
A. Yeh, C. A. Chang, C. -C. Cheng, J. -Y. Huang, and S. Hsu, “Microwave
characteristics of liquid crystal tunable capacitors,” IEEE Electron Device Lett., vol. 26, pp.
451-453, July 2005.
[84]
S. Hsu
and D. Pavlidis, “A
comparison of low-frequency noise characteristics and noise origins in
InP-based NPN and PNP heterojunciton bipolar transistors,” IEEE Trans. Electron Devices, vol.
50, no. 9, pp. 1974-1982, Sep. 2003.
[85]
S.
Hsu, D. Pavlidis, and D. Sawdai, “Low-frequency
noise characteristics of PNP InAlAs/InGaAs HBTs,” IEEE Electron
Device Letters, vol. 23, no. 12, pp.
688-690, Dec. 2002.
[86]
D.
Cui, D. Pavlidis, S. Hsu, and A. Eisenbach, “Comparison
of DC, high-frequency performance of zinc-doped and carbon-doped InP/InGaAs
HBTs grown by metalorganic chemical vapor deposition,” IEEE Trans.
Electron Devices, vol. 49, no. 5, pp. 725-732, May, 2002.
[87]
D.
Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin, and T. Block, “First
demonstration of monolithic InP-based HBT amplifier with PNP active load,”
IEEE Electron Device Letters, vol. 23, no. 3, pp. 114-117, Mar.
2002.
[88]
D.
Cui, S. Hsu, and D. Pavlidis, “DC
and high frequency characterization of Metalorganic Chemical Vapor
Deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor,”
Jpn. J. of Appl. Phys. Vol. 41, no. 2B, pp. 1143-1149, Feb, 2002.
[89]
D.
Cui, S. Hsu and D. Pavlidis, “Ka-band
oscillators using InP-based HBTs,” J.
of Solid-State Electronics, vol. 46, no. 2, pp. 249-253, Feb. 2002.
[90]
D.
Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S.
Hsu “Measurements
of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp
HBTs,” IEEE Electron Device Letters, vol. 22, no. 5, pp.
197-199, May. 2001.
[91]
D.
Sawdai, K. Yang, S. Hsu, D. Pavlidis, and G. Haddad, “Power
performance of InP-Based single- and double-heterojunction bipolar
transistors,” IEEE Trans. Microwave Theory Tech., vol. 47, pp.
1449-1456, Aug. 1999.
[92]
S.
Hsu, B. Bayraktaroglu, and D. Pavlidis, “Comparison of
conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,”
Journal of Solid-State Electronics, vol. 43, no. 8, pp. 1429-1436,
1999.
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[1]
P. Lee, Y. Shang, Y. Chang, H. Lin, D. Chang, and S. Hsu, “A continuous-mode
harmonic-tuning Ku-band GaN MMIC Doherty power amplifier with an 18.7 % fractional
bandwidth,” to be presented in Int.
Microwave Symposium (IMS), Boston, June 2026.
[2]
Y. Chang, Y. Shiao, W. Chen, B.
Chen, K. Chen, G. Huang, T. Lin, D. Chang, and S. Hsu, “Accurate cryogenic
S-Parameter measurement technique using room-temperature SOLT calibration
and 2X-thru de-embedding,” to be presented in Int.
Microwave Symposium (IMS), Boston, June 2026.
[3]
S. Hsu, M. K. Chaubey, Y. C. Chang, P. C. Wu, and H. H. Tsai,
“Ultra-low power wideband cryogenic CMOS noise-canceling LNAs for quantum
computing,” Proc. Asia-Pacific Microw. Conf. (APMC), Dec. 2025. (invited)
[4]
M. K. Chaubey, Y. C. Chang, P. C. Wu, H. H. Tsai, and S. S. H. Hsu, “A
0.003-mm2 42.6-dB Gain Ultrawideband Inductor-Less LNA in 28-nm
CMOS for Quantum Computing Readout Applications,” in Proc. IEEE
European Microw. Integrated Circuits Conf. (EuMIC), pp. 77-80, Sept.
2025.
[5]
M. K. Chaubey, Y. C. Chang, P. C. Wu, H. H. Tsai, and S. Hsu,
“A
45.4-dB gain Gm-boosting triple noise-canceling LNA in 28-nm CMOS for spin
qubit readout,” in Proc. IEEE European Microw. Conf. (EuMC), pp.
103-106, Sept. 2025. (finalist in the conference best paper award)
[6]
X. Yu, H. Wang, X.
Yang, S. Hsu, T. Yen, Y. He, C. Song, Y. Huang, and J. Zhou, “Watt-cevel X-band GaN Schottky
diode rectifier,” in Proc. IEEE European Microw. Conf. (EuMC), pp.
326-329, Sept. 2025.
[7]
J. Wang, Y. C. Chang, D. C. Chang, and S. S. H. Hsu, “A
sub-THz inductive source degeneration harmonic oscillator using 0.12-µm GaN
HEMT technology,” in IEEE Int. Symp. on Radio-Frequency Integration
Techn. (RFIT), pp. 151-153, Aug. 2025.
[8]
T. R. Hu, H. C. Lin, Y. C. Chang, S. H. Li, D. C. Chang, and
S. Hsu, “A
96-GHz 15.9-dB gain 20.7 dBm PSAT power amplifier in 60-nm
GaN-on-Si HEMT,” in IEEE Int. Symp. on Radio-Frequency Integration
Techn. (RFIT), pp. 196-198, Aug. 2025.
[9]
T. R. Hu, H. C. Lin, Y. C. Chang, D. C. Chang, and S. Hsu, “ A
Ku-band GaN MMIC power amplifier with a 47.4% large-signal fractional
bandwidth,” in IEEE Int. Symp. on Radio-Frequency Integration Techn.
(RFIT), Aug. pp. 229-231, 2025.
[10] Y. Shang, K. Chuang, Y. Chang, H. Lin, D. Chang, and S. Hsu, “A
continuous-mode class-F-1 X-band GaN MMIC power amplifier with a
29.7 % fractional bandwidth,” IEEE Int. Microwave
Symposium (IMS), San Francisco, pp. 456-459, June 2025.
[11] S. Li, J. Zhang, and
S. Hsu, “A
sub-6 GHz ultra-compact 69.8 % drain efficiency harmonic control Doherty
power amplifier in GaN technology,” IEEE Int. Microwave Symposium (IMS), San Francisco, pp.
647-650, June 2025.
[12] H. Wang, C. Hwang, P. Huang, Y. Liu, S. Hsu, and R. Wong, “Enhancing
continuous switching stability of β-Ga₂O₃ SBDs through epitaxial
surface condition and edge termination optimizations,” in Intl.
Symp. Power Semiconductor Devices and ICs (ISPSD), pp. 365-368,
Kumamoto, June 2025.
[13] H. Wang, P. Huang, W. Hsu, S. Hsu, and R. Wong, “Dynamic
on-resistance degradation in E-mode GaN HEMTs under over-voltage hard
switching stress: insight of physical space and energy levels,” Intl.
Symp. Power Semiconductor Devices and ICs (ISPSD), Kumamoto, pp.
277-280, June 2025.
[14]
X. Yu, H. Wang, Y. Liu, P. Y.
Huang, T. J. Yen, S. Hsu, Y. He, C. Song, Y. Huang, J. Zhou, “A
custom C-band high-power GaN-based rectifier for WPT systems, ” in IEEE
Wireless Power Techn. Conf. and Expo (WPTCE), pp. 1-4, June 2025.
[15] R. K. Y. Wong, Y. Liu, P. Y. Huang, H. Wang, C. H. Lai, C.
Chuang, X. H. Chen, S. Hsu, C. K. Chang, and M. C. Lin, “Critical
role of holes in reliability, robustness and stability of GaN-on-Si HEMTs
for power and RF applications,” in IEEE Int. Reliability Physics
Symp. (IRPS), pp. 1-10, March 2025. (invited)
[16] M. K. Chaubey, Y. C. Chang, P. C. Wu, H. H. Tsai, and S. Hsu, “A
0.06–1.62 GHz 37.6-dB gain cryogenic LNA with Gm-boosting and noise
reduction for large-scale quantum computing applications,” in Proc. Asia-Pacific
Microw. Conference (APMC), pp. 1317-1319, Dec. 2024.
[17] M. Chaubey, Y. Liu,
P. Wu, H. Tsai, and S. Hsu, “Cryogenic
DC and microwave characterization and modeling of 40-nm CMOS for quantum
computing applications,” IEEE Asia-Pacific Microwave Conference (APMC), Bali,
pp. 1311-1313, Dec. 2024.
[18] Y. Chang, T. Y. Lin,
J. Wang, H. C. Lin, C. P. Hsieh, S. Hsu, K. M. Chen, and D. C. Chang, “EM
emission test of a VCO with twisted inductor using chip-level near-field
measurement,” in Proc. Int. Symp. on Antennas and Propagation
(ISAP), Nov. 2024.
[19] H. Lin, Y. Chang, H.
Wu, C. Chang, C. Lin, Y. Liu, D. Chang, and Shawn S. H. Hsu "Miniaturized
low-pass filter using IPD technology for cryogenic quantum
applications," IEEE Intl. Conf. Quantum Computing and
Engineering (QCE), Montréal, pp. 1254-1257, Sep. 2024.
[20] M. Chaubey, Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A
46.7-dB gain 9.3-K noise temperature 5.8-mW two-fold current reuse dual
noise-canceling LNA in 28-nm CMOS for qubit readout,” IEEE RFIC Symposium, Washington, DC, pp. 247-250, June 2024.
[21] Y. Chang, J. Wang, Y. Chang, C. Chen, D. Chang, Y. Huang, and
S. Hsu, “A
Ka-band high power and low phase noise GaN MMIC oscillator with a compact
open-loop folded resonator filter,”
IEEE Int. Microwave Symposium (IMS), pp. 54-57,
Washington DC, June 2024.
[22] M. Chaubey, Y.
Chang, P. Wu, H. Tsai, and S. Hsu, “A
gm-boosting inductorless noise-canceling low noise amplifier in
40-nm CMOS for quantum applications,” IEEE Int. Microwave Symposium (IMS),
Washington, DC, pp. 866-869, June 2024.
[23] P. Huang, X. Chen, H. Wang, S. Hsu, and R. Wong, “Comprehensive
study of Human-Body-Model electrostatic discharge on p-GaN gate power HEMT
with AlGaN barrier spacers,” Intl. Symp. Power Semiconductor Devices
and ICs (ISPSD), Bremen, pp. 538-541, June 2024.
[24] H. Wang, C. Lai, P. Huang, Y. Lin, S. Hsu, and R. Wong, “Comprehensive
study on trapping-induced dynamics in β-Ga2O3 Schottky barrier diodes under
continuous switching stress,” Intl. Symp. Power Semiconductor
Devices and ICs (ISPSD), Bremen, pp. 224-227, June 2024.
[25] M. Chaubey, Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A
0.01-to-2.6-GHz two-fold current reuse noise-canceling LNA for quantum
applications,” IEEE Int'l Symp.
Circuits & Systems (ISCAS), Singapore, May 2024.
[26]
J. Wang, Y. C. Chang, Y. Liu, S. S. H. Hsu, and Y. Huang, “A
V-Band oscillator using GaN HEMTs,” in IEEE Int. Workshop Radio
Frequency and Antenna Techn. (iWRF&AT), pp. 196-199, May 2024. (Best paper award)
[27] C. Chen, J. Wang, S. Hsu, Y. Chang, C. Hsieh, D. Chang, and Y.
Huang, “Ultra-low
noise voltage supply using CMC filter for GaN oscillator phase noise
measurements,” IEEE Asia-Pacific
Microwave Conference (APMC),
Taipei, Dec. 2023.
[28] M. Chaubey, Y. Liu,
P. Wu, H. Tsai, and S. Hsu, “A
miniature 10MHz‒3GHz sub 1-dB NF cryogenic inductorless noise-canceling
low-noise amplifier for qubit readout,” IEEE Int. Microwave Symposium (IMS), San Diego, June 2023.
[29] J. Wang, Y. Chang,
Y. Liu, S. Li, D. Chang, Y. Huang, and S. Hsu, “A
110-GHz push-push balanced Colpitts oscillator Using 0.15-µm GaN HEMT
technology,” IEEE Int. Microwave
Symposium (IMS), San Diego, June 2023.
[30] Y. Chang, T. Lin, J.
Wang, S. Lin, C. Hsieh, Yi Huang, S. Hsu, and D. Chang, “A
miniature W-band substrate-integrated waveguide cavity bandpass filter
using GaAs-based IPD technology,”” IEEE
Int. Microwave Symposium (IMS), San Diego, June 2023.
[31] J. Wang, Y. Chang,
D. Chang, S. Hsu, and Y. Huang, “W-band cavity-backed folded-slot antenna
using GaAs integrated passive device technology,” Intl. Workshop on Antenna Technology (iWAT), Aalborg, Denmark,
May, 2023.
[32] S. Hsu, S. Li, R.
Joshi, M. Liu, S. D. Joseph, J. Wang, Y. Liu, Y. Chang, and Y. Huang, “GaN
HEMTs for High-frequency power applications,” Asia-Pacific Workshop on Widegap Semiconductors Taoyuan, Nov.
2022. (invited)
[33] Y. Chang, P. Wang,
T. Lin, C. Hsieh, D. Chang, and S. Hsu, “Chip-level
high-frequency EMC strategies and measurement techniques,” IEEE Int. Symp. Radio-Frequency
Integration Technology, Busan, Aug. 2022. (invited)
[34] Y. Chang, J. Wang, T. Lin, C. Hsieh, Y. Huang, S. Hsu, and D.
Chang, “3D
chip-level broadband measurement technique for radiated EM emission,” IEEE Int. Microwave Symposium (IMS), Denver, June 2022.
[35] S. D. Joseph, S. Hsu, and Y. Huang, “Rectennas for wireless
energy harvesting and power transfer,” IEEE Int. Symp.
Radio-Frequency Integration Technology, Taipei, Aug. 2021. (invited)
[36] M. Wu, S. Hong, H.
Su, and S. Hsu, “A
64-Gbaud transimpedance amplifier in 130nm SiGe technology with effective
broadband techniques,” IEEE Int.
Microwave Symposium (IMS), Atlanta, June 2021.
[37] Y. Chang, T. Lin, C.
Hsieh, P. Wang, S. Hsu, and D. Chang, “A
low EM susceptibility VCO with four-leaf-clover-shaped inductor verified
via chip-level 3D near-field measurement technique,” t IEEE Int. Microwave Symposium (IMS),
Atlanta, June 2021.
[38] T. Lee, J. Zhang, S. Hong, C. Hsu, S. Li, S. Chen, S. Sheu, C.
Wu, and S. Hsu, “A
low power CMOS driver integrated with Mach-Zehnder modulator for PAM4
optical transmissions,” European Microwave
Conf. (EuMC), Jan. 2021.
[39] R. Joshi, M. Liu,
and S. Hsu, “A
high efficiency compact class F GaN MMIC power amplifier for 5G
applications,” European Microwave
Conf. (EuMC), Jan. 2021 (Best poster pitch prize).
[40] Y. Chang, T. Lin, C.
Hsieh, Y. Chang, M. Yen, S. Hsu, and D. Chang, “Technique of measuring
injection locking of VCO,” IEEE
Asia-Pacific Symp. on Electromagn. Compat. (APEMC), Sydney, May 2020.
[41] S. D. Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Song, “A novel duplexing
antenna for feedback wireless power transfer,” 14th European Conf. Antennas and Propagation (EuCAP 2020),
Copenhagen, Mar. 2020.
[42] Y. Chang, T. Lin, C.
Hsieh, D. Chang, S. Hsu, M. Yen, and J. Dong, “Discrete 1Ω
probe by using flip-chip IPD resistor and amplifier for inspecting EMI of a
packaged IC,” IEEE CPMT Symp.
pp. 163-164, Japan (ICSJ), Nov. 2019.
[43] S. D Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li, “A novel
transmission line technique to realize broadband rectenna for WEH and WPT
applications,” 2019 Asian Wireless Power Transfer Workshop (AWPT), Xian,
Oct. 2019.
[44] C. Li, H. Wang, Y. Liu, S. D. Joseph, Y. Huang,
and S. Hsu, “Low turn-on voltage and high breakdown GaN Schottky barrier
diodes for RF energy harvesting applications,” Intl. Conf. on Solid State Devices and Materials (SSDM),
Nagoya, Sept. 2019.
[45] C. Li, Y. Liu, W.
Hsu, C. Chuang, J. Liu, and S. Hsu, “High frequency AlGaN/GaN T-gate HEMTs
on extremely low resistivity silicon substrates,” Intl. Conf. on Solid State Devices and Materials (SSDM),
Nagoya, Sept. 2019.
[46] T. Chen, H. Su, T.
Lee, and S. Hsu, “A
64-Gb/s 4.2-Vpp modulator driver using stacked-FET distributed amplifier
topology in 65-nm CMOS,” IEEE
Int. Microwave Symposium (IMS), Boston, June 2019.
[47] S. D Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li " A novel
miniaturized broadband Yagi-Uda antenna with enhanced gain for wireless
energy harvesting applications," 2019 13th European Conference on
Antennas and Propagation (EuCAP),
Krakow, May, 2019.
[48] Y. Chang, P. Wang,
H. Hsiao, T. Lin, S. Hsu, M. Yen, M Lin, and D. Chang, "EMS
Characterization of LDO with On-Chip Decaps by Using Direct RF Power
Injection Method," IEEE Intl.
Workshop on Electromagnetics (iWEM), Nagoya, Aug., 2018.
[49] Y. Chang, T. Lin, P.
Wang, S. Hsu, M. Yen, C. Hung, and D. Chang, "Implementation of
Certified 150-Ω Voltage Probe for IEC 61967-4 Conducted Electromagnetic
Emission Measurement," Intl.
Conf. Precision Electromagnetic Measurements (CPEM), Pairs, July, 2018.
[50] S. Li, S. Hsu, J.
Zhang, and K. Huang, “A sub-6 GHz
compact GaN MMIC Doherty PA with a 49.5% 6 dB back-off PAE for 5G
communications,” IEEE Int.
Microwave Symposium (IMS), Philadelphia,, June 2018, pp. 805-807.
[51] S. Joseph, Y. Huang,
S. Hsu, M. Stanley, and C. Song, “A
novel dual-polarized millimeter-wave antenna array with harmonic rejection
for wireless power transmission,” 12th
European Conf. Antennas and Propagation (EuCAP 2018), London, Apr.
2018.
[52] Y. Chang, Y. Ou, C.
Hsieh, P. Wang, S. Hsu, M. Yen, Y. Chang, C. Chen, and D. Chang,
“Measurement technique for high precision and noise sensitive ICs using
multiple output-bias board with low baseband noise,” in IEEE International Symposium on
Electromagn. Compat. (EMC), pp. 61-64, Washington DC, Aug. 2017.
[53] P. Wang, G. Su, Y. Chang, D. Chang, and S. Hsu, “A
current-reuse quadrature phase oscillator with frequency pulling
suppression technique,” IEEE Int.
Microwave Symposium, Honolulu, June 2017.
[54] Y. Chang, P. Wang, S.
Hsu, M. Yen, Y. Chang, J. Dong, T. Lin, and D. Chang, “Implementation
of chip-level EMC strategies in 0.18 μm CMOS technology,” IEEE Asia-Pacific Symp. on Electromagn.
Compat. (APEMC), pp. 390-392, Seoul, June 2017. (Best poster paper award)
[55] Y. Chang, T. Lin, P. Wang, S. Hsu, M. Yen, Y. Chang, M. Lin,
and D. Chang, “The design of current
probe in the IEC conducted emission measurement above 1 GHz,” Int. Symp. on Antennas and Propagation
(ISAP), Okinawa, Oct. 2016.
[56] S. Hsu, Y. Li, C. Liao, P. Wang, Y. Liu, P. Chiu, S. Chen, K.
Li, D. Thomson, and G. T. Reed, “Integration of high speed and low power
CMOS front-end circuits with silicon photonic devices,” Int. Conf. on Solid State Devices and Materials, Sep. 2016. (invited)
[57] S. Chen, P. Chiu, Y.
Li, S. Hsu, K. Li, D. J. Thomson, and G. Reed, “High speed and
low power silicon-based receiver front-end for optical interconnect,” IEEE Intl. Conf. Group IV Photonics
(GFP), Aug. 2016.
[58] D. J. Thomson, C. G.
Littlejohns, K. Li, M. Nedeljkovic, A. Z. Khokhar, F. Y. Gardes, G. Z. Mashanovich,
C. Lacava, P. Petropoulos, D. J. Richardson, M. S. Rouifed, H. Qiu, T. G.
Xin, T. Hu, Z. Zhang, H. Wang, S. Hsu, and G. T. Reed, “Integrated silicon
optical modulators,” Progress in
Electromagnetics Research Symposium (PIERS),
Aug. 2016. (invited)
[59] S. Hsu, C. Tsou, Y.
Lian, and Y. Lin, “GaN-on-silicon
devices and technologies for RF and microwave applications,” IEEE Intl. Symp. Radio-Frequency
Integration Technology, Aug. 2016. (invited)
[60] P. Wang, M. Chou, Y.
Chen, Y. Chang, D. Chang, and S. Hsu, “A Ku-band low-phase-noise
transformer coupled VCO for satellite communications,” IEEE Intl. Symp. Radio-Frequency
Integration Technology, Aug. 2016.
[61] Y. Chang, P. Wang, S. Hsu, T.
Lin, C. Hsieh, and D. Chang, “A V-band CPW Bandpass
Filter with Controllable Transmission Zeros in Integrated Passive Devices
(IPD) Technology,” IEEE Int.
Microwave Symposium (IMS), San Francisco, May 2016.
[62] Y. Chang, P. Wang,
S. Hsu, Y. Chang, C. Chen, and D. Chang, “Impact and improvement of
resistor process variation on RF passive circuit design in Integrated
Passive Devices (IPD) technology,” Intl.
Conf. on Solid State Devices and
Materials (SSDM), pp. 74-75, Sapporo, Sept. 2015.
[63] P. Wang, Y. Shen, M.
Chou, T. Wu, M. Chen, Y. Chang, D. Chang, and S. Hsu, “A BiCMOS
Monolithic Ka-band Down-Converter for satellite communication systems,”
IEEE Int. Microwave Symposium, San
Francisco, May 2015.
[64] Y. Chang, P. Wang, S. Hsu, M. Yen, Y. Chang, C. Chen, and D.
Chang, “Design
of the Multifunction IC-EMC Test Board with Off-Board Probes for Evaluating
a Microcontroller,” IEEE
Asia-Pacific Symp. on Electromagn. Compat. (APEMC), pp. 223-226,
Taipei, May 2015.
[65] S. Hsu, P. Wang, P. Su,
M. Chou, Y. Chang, and D. Chang, “Design of Ku/Ka band down-converter
front-end for digital broadcast satellite receivers,” IEEE Int. Wireless Symposium, Mar. 2015. (invited)
[66] P. Wang, T. Wu, M.
Chou, M. Chen, Y. Chang, D. Chang, and S. Hsu, “Design of wideband
sub-harmonic receiver front-end using 0.18-um BiCMOS technology,” IEEE Int. Wireless Symposium, Mar.
2015.
[67] P. Wang, T. Wu, M.
Chen, Y. Shen, Y. Chang, D. Chang, and S. Hsu, “A
low phase noise class-C VCO using novel 8-shaped transformer,” IEEE Int'l Symp. Circuits & Systems
(ISCAS), May 2015.
[68] P. Wang, Y. Shen, M.
Chou, Y. Chang, T. Wu, D. Chang, and S. Hsu, “Design of fully integrated
receiver front-end for VSAT applications,” IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits
in RF Systems (SiRF), Jan., 2015.
[69] P. Wang, Y. Shen, M.
Chou, K. Chuang, Y. Chang, D. Chang, and S. Hsu, “Design of 24 GHz CMOS VCO
using Armstrong topology with asymmetric transformer,” IEEE Asia-Pacific Microwave Conference (APMC), 2014.
[70] P. Wang, Y. Chang, K. Chuang, D. Chang, and S. Hsu, “A low phase noise 24
GHz CMOS quadrature-VCO using PMOS-source-follower coupling technique,”
Proc. 44th European
Microwave Circuits Conf. (EuMC),
Oct. 2014, pp. 572-575.
[71] J. Y.-C. Liu, C. Chan, and S. Hsu, “A
K-band power amplifier with adaptive bias in 90-nm CMOS,” Proc. 44th
European Microwave Circuits Conf.
(EuMC), Oct. 2014, pp. 1376-1379.
[72] P. Wang, M. Chou, P.
Su, Y. Chang, K. Chuang, and S. Hsu, “A fully integrated
Ku-band down-converter front-end for DBS receivers,” IEEE Int. Microwave Symposium, Tampa
Bay, June 2014.
[73] Y. Chang,
P. Wang,
S. Hsu,
Y. Chang,
C. Chen,
H. Cheng,
and D. Chang,
“Investigation
on realizing
1Ω current
probe
complied
with IEC 61967-4 direct coupling method,”
in Proc. International Symposium on
Electromagnetic Compatibility (EMC’14), pp. 573-576, Tokyo, Japan, May
2014. (Best paper award
finalist)
[74] M. Tsai and S. Hsu, “ESD protection design
for microwave/millimeter wave low-noise amplifiers,” IEEE Int. Wireless Symposium, Mar.
2014. (invited)
[75] Y. Chang, S. Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, ”The
direct
RF power
injection
method
up to 18 GHz for Investigating IC's Susceptibility,” in Proc. International Workshop on
Electromagnetic Compatibility of Integrated Circuits (EMCCompo), pp.
167-170, Nara, Japan, Dec. 2013.
[76] G. Reed, D. Thomson,
F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. Wilson, L. Zimmermann, H.
Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J.
Fedeli, K. Debnath, T. Krauss, and L. O’Faolain, “Options for silicon based
modulators,” Frontiers in Optics 2013,
Orlando, October 2013. (invited)
[77] G. Reed, D. Thomson,
F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. W. Wilson, L. Zimmermann, H.
Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J.
Fedeli, K. Debnath, T. Krauss, and L. O’Faolain, “Silicon optical
modulators for short reach interconnect,” Int. Conf. on Solid State Devices and Materials (SSDM),
Fukuoka, Sep. 2013. (invited)
[78] C. Tsou, Y. Lian, J. Hung, Y. Lin, and S. Hsu, “AlGaN/GaN
HEMTs on silicon with hybrid source/drain for source-drain scaling and
frequency dispersion suppression,” 2013 Int.
Conf. on Solid State Devices and Materials (SSDM). (late news)
[79] D. Thomson, F.
Gardes, Y. Hu, G. Mashanovich, G. Reed, L. Zimmermann, D. Knoll, S.
Lischke, H. Porte, B. Goll, H. Zimmermann, L. Ke, P. Wilson, S. Chen, S.
Hsu, G. Duan, A. Le Liepvre, C. Jany, A. Accard, M. Lamponi, D. Make, F.
Lelarge, S. Messaoudene, D. Bordel, J. Fedeli, S. Keyvaninia, G. Roelkens,
and D. Van Thourhout, “Integration of high performance silicon
optical modulators,” IEEE Group IV
Photonics, Seoul, Aug. 2013. (invited)
[80] Y. Chang, S. Hsu, H. Cheng, and D. Chang, “The practical
measurement setup of DPI method above 1 GHz for ICs,” in IEEE Proc. Asia-Pacific Symp. Electromagnetic Compatibility, Melbourne, May 2013. (Best
paper award)
[81] M. Tsai, H. Hsieh, C. Lin, L. Chu, S. Hsu, J. Jin, T. Yeh, C.
Jou, F. Hsueh, and M. Ker, “A 56-67
GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in
65-nm CMOS,” in Proc. IEEE Asia-Pacific Microwave Conference, pp.
747-749, Kaohsiung, Dec. 2012.
[82] M. Tsai, S. Huang, and S. Hsu, “ESD protection design for
V-band low-noise amplifier using RF junction varactors,” Int. Conf. on Solid State Devices and Materials (SSDM), Kyoto, Sep. 2012.
[83] K. Tan, C. Lai, P. Lu, C. Tu, G. Huang, J. Wu, S. Hsu, and T.
Chu, “A 79GHz
UWB Pulse-Compression Vehicular Radar in 90nm CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.
[84] M. Tsai, S. Hsu, T.
Yeh, C. Jou, and F. Hsueh, “A
V-band
low-noise
amplifier
with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF
CMOS,” IEEE Int. Microwave
Symposium,
Montreal, June 2012.
[85] Y. Chang, B. Wang,
S. Hsu, Y. Chang, C. Chen, Y. Juang, H. Cheng and D. Chang, “The evaluation
flow
for EMC behavior
of RF ICs,” in Proc. IEEE
Asia-Pacific Symp. on Electromagn. Compat , pp. 321-324, Singapore,
May, 2012.
[86] S. Hsu, W. Cho, S.
Chen, and J. Jin, “CMOS Broadband Amplifiers for Optical Communications and
Optical Interconnects,” IEEE Int.
Symp. Radio-Frequency Integration Technology, Beijing, Dec. 2011. (invited)
[87] Y. Chang, D. Chang,
S. Hsu, J. Lee, S. Lin, and Y. Juang, “A matrix-computation based
methodology for extracting the S-Parameters of interconnects in advanced
packaging technologies,” in Proc. IEEE Asia-Pacific
Microwave Conference, pp. 1909-1912, Dec. 2011.
[88] S. Hsu and M. Tsai, “Low-noise amplifiers with robust ESD
protection for RF SOC,” Inter. SoC
Design Conference, Jeju, Nov.
2011. (invited)
[89] Y. Chang, S. Hsu, D.
Chang, J. Lee, S. Lin, and Y. Juang, “A
de-embedding method for extracting S-parameters of vertical interconnect in
advanced packing,” in Proc. IEEE
Int. Conf. Electrical
Performance of Electronic Packaging and Systems, pp.
219-222, San Jose, Oct. 2011.
[90] C. Yu, C. Huang, P.
Chu, K. Chen, S. Hsu, H. Chiu, and F. Zhao, “High-voltage AlGaN/GaN HEMTs
on Si substrate with implant isolation,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya,
Sep. 2011.
[91] Y. Lin, Y. Lian, H.
Lu, Y. Huang, and S. Hsu, “AlGaN/GaN HEMTs on silicon with hybrid
schottky-ohmic drain for improved DC characteristics,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya,
Sep. 2011.
[92] J. Wang, T. Huang,
Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku, and C. Lin, “Testkey design
of through silicon vias (TSVs) for accurate de-embedding and RF model
parameters extraction,” Int. Conf. on
Solid State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[93] M. Tasi, S. Hsu, T.
Yeh, J. Jin, H. Hsueh, C. Jou, and F. Hsueh, “A
24-GHz low-noise amplifier co-designed with ESD protection using junction
varactors in 65-nm RF CMOS,” IEEE
Int. Microwave Symposium, Baltimore, June 2011.
[94] F. Chen, M. Kao, Y.
Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu, “A 10 to 11.5 GHz rotational
phase and frequency detector for clock recovery circuit,” IEEE Int. Symp. Circuits and Systems
(ISCAS), Rio de Janeiro, May 2011 (Best Student Paper Contest Finalist).
[95] M. Tasi, S. Hsu, F.
Hsueh, C. Jou, M. Song, J. Tseng, T. Chang, and D. Nag, “An analog
front-end circuit with dual-directional SCR ESD protection for UHF-band
passive RFID Tag,” IEEE Int. Conf.
RFID, Orlando, pp. 206-209, April 2011.
[96] C. Luo, Y. Wu, J.
Wang, and S. Hsu, “RF
modeling of through silicon vias (TSVs) in 3D IC,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM),
pp. 239-240, Tokyo, Sep. 2010.
[97] C. Hsiao, W. Wang,
T. Su, Y. Wu, and S. Hsu, “A gate-drain coupling distributed amplifier
in 90-nm CMOS technology,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 810-811, Tokyo, Sep. 2010.
[98] W. Tsai, C. Chiu, J.
Wu, S. Hsu, and Y. Hsu, “A novel
MUX-FF circuit for low power and high speed serial link interfaces,” IEEE Int. Symp. Circuits and Systems
(ISCAS), pp. 4305-4308, Paris, May 2010.
[99] Y. Hsu, M. Kao, F.
Chen, C. Chiu, J. Wu, and S. Hsu, “A 32Gbps low propagation
delay 4´4 switch IC for
feedback-based system in 0.13 µm CMOS technology,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 581-584,
Paris, May 2010.
[100]
M. Tasi, F. Hsueh, C. Jou, M. Song, J. Tseng, S. Hsu, and S.
Chen, “A
6.5 kV ESD-protected low noise amplifier in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig., pp.485-488, Anaheim, May 2010.
[101]
S. Hsu and J. Jin, “CMOS
broadband amplifiers for optical communications,” Int. Symp. Microwave and Optical
Technology, New Delhi, India, pp. 1251-1254, Dec. 2009 (invited).
[102]
Y. Lin, Y. Lian, S. Hsu, and T. Lee, “Low leakage AlGaN/GaN
HEMTs with a high On/Off current ratio,” Int. Conf. on Solid State Devices and Materials (SSDM), Miyagi,
Oct. 2009.
[103]
Y. Lian, Y. Lin, and S. Hsu, “High breakdown GaN Schottky
diodes with buried P-layer structure,” Int.
Conf. on Solid State Devices and Materials (SSDM), Miyagi, Oct. 2009.
[104]
M. Tasi, S. Hsu, and K. Tan, “A low noise amplifier
co-designed with ESD protection circuit in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig.,
pp. 573-576, Boston, June 2009.
[105]
S. Hsu, “Design techniques for CMOS broadband
amplifiers,” CMOS Emerging
Technologies Workshops, Banff, Feb. 2009 (invited).
[106]
Y. Lin, J. Wu, S. Hsu, C. Chan, and Y. Lian, “GaN-based
Schottky varactors for high-power RF applications,” Proc. Int. Conf. on Solid
State Devices and Materials (SSDM), pp. 506-507, Ibaraki, Sep. 2008.
[107]
J. Jin and S. Hsu, “A 70-GHz
transformer-peaking broadband amplifier in 0.13-μm CMOS technology,” IEEE MTT-S Int. Microwave Symp. Dig.,
Atlanta, pp. 285-288, June 2008.
[108]
J. Jin and S. Hsu, “Wideband CMOS
transimpedance amplifier design using transformer-peaking technique,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 492-493, Ibaraki, Sep. 2007.
[109]
J. Jin, S. Hsu, T. Yeh, M. Yang, S. Liu, “Fully
analytical modeling of Cu interconnects up to 110 GHz,” Proc. Int. Conf. on
Solid State Devices and Materials(SSDM), pp. 908-909, Ibaraki, Sep. 2007.
[110]
Y. Lin, T. Lee, Y. Wang, and S. Hsu, “Layout optimization
of AlGaN/GaN HEMTs for high-power applications,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 156-157, Ibaraki, Sep. 2007.
[111]
S. Wang, Y. Wu, S. Hsu, and C. Chan, “Substrate coupling
effect under various noise injection topologies in LC-voltage controlled
oscillator,” IEEE RFIC Symp., pp. 705-708, Hawaii, June 2007.
[112]
C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y. Juang, “Edge-extended
design for improved flicker noise characteristics in 0.13-µm RF NMOS,” IEEE
MTT-S Int. Microwave Symp., pp. 441-444, Hawaii, June 2007.
[113]
C. Chiu, Y. Hsu, M. Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F.
Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu, “A scalable load balanced Birkhoff-von
Neumann symmetric TDM switch IC for high-speed networking
applications,” IEEE
Int. Symp. Circuits and Systems, pp. 2754-2757, New Orleans, May 2007.
[114]
L. Fan, S. Hsu, J. Jin, C. Hsieh, W. Lin, H. Hao, H. Cheng, K.
Hsueh, and C. Lee, “Miniaturization
of magnetic resonance microsystem components for 3D cell imaging,” IEEE Int. Solid-State Circuit Conf. (ISSCC), San Francisco, pp.
166-168, Feb. 2007.
[115]
Y. Hsu, M. Kao, H. Tzeng, C. Chiu, J. Wu, and S. Hsu, “A
20Gbps scalable load balanced Birkhoff-von Neumann symmetric TDM switch IC
with SERDES interfaces,” IEEE
proc. 12th Asia and South Pacific Design Automation Conf., pp. 23-26, Yokohama, Jan. 2007.
[116]
C. Chan, P. Tsai, T. Lee, S. Hsu, J. Kwo, and M. Hong, “Flicker
noise characteristics in GaAs MOSFETs,” MBE conf., Durham, Sep.
2006.
[117]
C. Chan, J. Jin, Y. Lin, S. Hsu, and Y. Juang, “STI effect on
flicker noise in 0.13-µm RF NMOS,” European Solid-state Device
Conference (ESSDERC), pp.101-104, Montreux,
Sep. 2006.
[118]
J. Jin and S. Hsu, “40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,” European
Solid-state Circuit Conference (ESSCIRC), pp. 520-523, Montreux, Sep.
2006.
[119]
J. Jin, S. Hsu, M. Yang, and S. Liu, “Low-loss single
and differential semi-coaxial interconnects in standard CMOS process,” IEEE
MTT-S Int. Microwave Symp. Dig., pp. 420-423, San Francisco, June 2006.
[120]
C. Hsiao, M. Kao, C. Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S.
Hsu, and Y. Hsu, “3.2
Gbit/s CML transmitter with 20:1 multiplexer in 0.18-µm CMOS technology,”
IEEE Int. Conf. Mixed Design of Integrated Circuits and
Systems, pp. 179-183, June 2006.
[121]
X. Zhu, J. Wang, D. Pavlidis, and S. Hsu “InP/GaAsSb/InP
DHBT technology and its application to MM-wave integrated oscillators,”
proc. 30th Workshop on Compound Semiconductor Devices and Integrated
Circuits in Europe (WOCSDICE),
Fiskebäckskil, S. 51-53, May 2006.
[122]
D. Pavlidis, P. Valizadeh, and S. Hsu, “AlGaN/GaN
high electron mobility transistor (HEMT) reliability,” European
Microwave Conf., Paris, pp. 265-268, Oct. 2005.
[123]
C. Chiu, J. Wu, S. Hsu, M. Kao, C. Jen, and Y. Hsu, “A 10Gb/s
wide-band current-mode logic I/O interface for high-speed interconnect in
0.18-µm CMOS technology,” IEEE Int. SOC Conf., pp. 257-260, Sep.
2005.
[124]
L. Fan, W. Huang, C. Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu,
A. Jin, K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien, A. Yeh, J.
Chen, W. Wu, and C. Lai, “Magnetic
resonance Microsystems for life science applications,” Proc. of
Transducers 2005, pp.1998-2001, Seoul, Korea, June 2005.
[125]
X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, “First demonstration
of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP
DHBTs,” IEEE MTT-S Int.
Microwave Symp. Dig., pp. 101-103, June 2005.
[126]
S. Hsu and D. Pavlidis, “Analysis
and modeling of dispersion characteristics in AlGaN/GaN MODFETs,” proc.
25th IEEE GaAs IC Symposium, pp. 119-122, Nov. 2003.
[127]
D. Pavlidis, S. M. Hubbard, S. Hsu and S. Seo “AlGaN/GaN and
AlN/GaN heterostructuredevices: A possible device technology for high RF
power wireless transmission” 2003 Japan-United
States Joint Workshop on Space Solar Power System (JUSPS'03), July,
2003, Kyoto, Japan
[128]
X. Zhu, S. Hsu and D. Pavlidis, “First microwave
characteristics of InGaAlAs/GaAsSb/InP double HBTs,” Topical Workshop on
Heterostructure Microelectronics for Information Systems Applications,
Okinawa, Japan, pp. 18-19, Jan. 2003.
[129]
D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh, “GaN device and material considerations: A
tutorial and general discussion” 2002
GaAs REL Workshop, Monterey, Oct. 2002.
[130]
S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D.
Wong and T. Hussain, “Impacts
of RF stress on dispersion effects andpower characteristics for AlGaN/GaN
HEMTs,” proc. 24th IEEE GaAs
IC Symposium,
pp. 85-88, 2002.
[131]
S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T.
Hussain, “Characterization
and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs,” proc. IEEE Lester
Eastman conference, pp. 453-460, 2002.
[132]
S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D.
Wong and T. Hussain, “Study
on large-signal linearity and efficiency of AlGaN/GaN MODFETs,” proceeding of 32nd European microwave
conference,
pp. 1-4, 2002.
[133]
S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T.
Hussain, “Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and
study of their origins,” proc. 26th
Workshop on Compound Semiconductor Devices and Integrated Circuits in
Europe (WOCSDICE), Chernogolovka, pp.
115-116, May 2002.
[134]
D. Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin and T. Block,
“InP-based NPN-PNP HBT common collector push-pull monolithic integrated
amplifiers,” proc. 26th
Workshop on Compound Semiconductor Devices and Integrated Circuits in
Europe (WOCSDICE), Chernogolovka, pp. 147-148, May 2002.
[135]
S. Hsu, D. Pavlidis, J. Moon, M. Micovic, C. Nguyen, and D.
Grider, “Low
noise AlGaN/GaN MODFETs with high breakdown and power characteristics,”23rd
IEEE GaAs IC Symposium, pp. 229-232, Oct. 2001.
[136]
S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, “Low noise, high-speed
InP/InGaAs HBTs,” 23rd IEEE GaAs IC Symposium, pp. 188-191, Oct. 2001.
[137]
S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic, C. Nguyen, D.
Grider, “High frequency noise studies in AlGaN/GaN
MODFETs,” proceeding of 25th
Workshop on Compound Semiconductor Devices and Integrated Circuits in
Europe (WOCSDICE), Cagliari,
pp.147-148, May 2001.
[138]
D. Cui, S. Hsu and D. Pavlidis, “First InP/InGaAs
PNP HBT grown by metal organic chemical vapor deposition”, 13th IEEE
Int. Conf. Indium Phosphide and Related materials (IPRM’01), Nara,
Japan, pp. 224-227, May 2001.
[139]
E. Alekseev, S. Hsu, D. Pavlidis, T. Tsuchiya and M. Kihara, “Broadband AlGaN/GaN HEMT
MMIC attenuators with high dynamic range,” Proceeding
of 30th European microwave
conference,
2000.
[140]
D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, P. Chin and T. Block, “Low
DC power, high gain-bandwidth product, coplanar Darlington feedback
amplifiers using InAlAs/InGaAs heterojunction bipolar transistors,” 22nd IEEE GaAs IC
Symposium, pp.259-262, 2000.
[141]
D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T.
Block, “High power
performance using InAlAs/InGaAs single HBTs,” 12th IEEE Indium
Phosphide and Related Materials (IPRM’00), Williamsburg, VA, May
15-19, pp. 473-476, 2000.
[142]
D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D.
Pavlidis, and S. Hsu, “Hole impact
ionization coefficient in (100)-oriented In0.53Ga0.47As,” 12th IEEE Indium Phosphide and Related
Materials (IPRM’00), Williamsburg, pp. 258-261, May 2000.
[143]
S. Hsu, P.N. Tan, D. Pavlidis, E. Alekseev, N.X. Nguyen, C.
Nguyen, and D.E. Grider, “Frequency
dependent output resistance and transconductance in ALGaN/GaN MODFETs,” Proceeding of 1999 International
Semiconductor Device Research Symposium (ISDRS), Charlottesville, pp. 315-317, Dec. 1999.
[144]
S. Hsu, D. Sawdai, and D. Pavlidis, “Modeling of
highly-nonlinear HBT characteristics using a distributed thermal subcircuit
derived from pulsed measurements,” 53rd ARFTG conference (MTT
Symposium) Digest, Anaheim, pp.139-145, June 1999.
[145]
S. Hsu, B. Bayraktaroglu and D. Pavlidis, “Comparison of
conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,” Topical Workshop on Heterostructure
Microelectronics for Information Systems Applications, Kanagawa, Japan,
Aug. 30-Sep. 2, pp. S3-6, 1998.
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