[1] M. K. Chaubey,
Y. Liu, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “Ultracompact
inductorless noisecanceling LNAs in 40nm CMOS achieving 2.2K noise
temperature for qubit readout,” accepted for IEEE Trans. Microwave
Theory Techn., Jan. 2024 (early
access).
[2] J. Wang, Y. Huang, Y. Chang, Y. Liu, D.
Chang, and S. Hsu*, ”A Kband MMIC
crosscoupled oscillator with high output power in 0.25mm GaN HEMT,” IEEE Microwave and Wireless Technology Lett., vol. 33, no. 8,
pp. 12111214, Aug. 2023.
[3] S. Hong and S. Hsu*, “An inductorless
20Gbaud overshoot suppression modulator driver using interleave frequency
variant feedback in 90nm CMOS,” IEEE
Trans. Microwave Theory Techn.,
vol. 71, no. 3, pp. 10441054, March 2023.
[4] C. Lin, S. Hong, and S. Hsu*, “A
40Gb/s modulator driver using cascade swing compensation in 90 nm CMOS,“ IEEE
Microwave and
Wireless Components Lett., vol. 32, no. 9, pp. 11031106, Sept. 2022.
[5] S. D. Joseph, Y. Huang*, S. Hsu*, A. Alieldin, and C. Song, “ Second harmonic exploitation for
highefficiency wireless power transfer using duplexing rectenna,” IEEE Trans. Microwave Theory Techn.,
vol. 69, no. 1, pp. 482494, Jan.
2021.
[6] S. D. Joseph, Yi Huang*, and S. H. Hsu*, “Transmission
linesbased impedance matching technique for broadband rectifier,” IEEE Access, vol. 8, pp. 46654672,
Dec. 2020.
[7] S. D. Joseph, S. Hsu*, A. Alieldin, C. Song, Y. Liu, and Y. Huang*, “Highpower
wire bonded GaN rectifier for wireless power transmission,” IEEE Access, vol. 9, pp.
8203582041, Apr. 2020.
[8] Y. Liu, C. Li, W. Hsu, C. Chuang, J. Liu,
and S. Hsu, “Highfrequency
AlGaN/GaN Tgate HEMTs on extreme low resistivity silicon substrates,” Jpn. Journal of Applied Physics, 59,
SGGD11, Feb. 2020.
[9] H. Wang, CH Li, Y. Liu, S. D. Joseph, Y.
Huang, and S. Hsu, “Low
turnon voltage and high breakdown GaN Schottky barrier diodes for RF
energy harvesting applications,” Jpn. Journal of Applied Physics, 59, SGGD12, Feb. 2020.
[10] S. Li, S. Hsu*, K. Chen, C. Lin, S. Chen,
J. Zhang, and P. Tzeng, “Fully
symmetric 3D transformers with throughsilicon via IPD technology for RF
applications,” IEEE Trans. Compon. Packag. manuf.
Technology, vol. 9, no. 11, Nov. 2019.
[11] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “A lowloss fully
integrated CMOS active probe for gigahertz conducted EMI test,” IEEE Trans. Microwave Theory Techn.,
vol. 67, no. 4, pp. 16521660, Apr. 2019.
[12] S. Li, S. Hsu*, J. Zhang, and K. Huang, “Design of
a compact GaN MMIC Doherty power amplifier and system level analysis With XParameters for 5G communications,” IEEE Trans. Microwave Theory Techn.,
vol. 66, no. 12, pp. 56765684, Dec. 2018.
[13] J. Liu and S. Hsu*, “A miniature
300MHz resonant DCDC converter with GaN and CMOS integrated in IPD
technology,” IEEE Trans. Power
Electronics, vol. 33, no. 11, pp. 96569668, Nov. 2018.
[14] P. Wang, G. Su,
Y. Chang, D. Chang, and S. Hsu*, “A
transformerbased currentreuse QVCO with an FoM up to 200.5 dBc/Hz,” IEEE Trans. Circuits and Systems II, vol.
65, no. 6, pp. 749753, June 2018.
[15] Y. Li, P. Chiu, K. Li, D. Thomson, G.
Reed, and S. Hsu*, “A 40Gb/s
4Vpp differential modulator driver in 90 nm CMOS,” IEEE Microwave and
Wireless Components Lett., vol. 28, no. 1,
pp. 7375, Jan. 2018.
[16] Y. Lin and S. Hsu*, “A Sierpinski
spacefilling clock tree using multiplyby3 fractalcoupled ring
oscillators,” IEEE J. SolidState
Circuits, vol. 52, no.
11, pp. 29472962, Nov. 2017.
[17] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “Wideband
conducted electromagnetic emission measurements using IPD chip probes,”
IEEE Trans. Microwave Theory Techn.,
vol. 64, no. 11, pp. 40634070, Nov. 2016.
[18] C. Tsou, H. Kang, Y. Lian, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid SchottkyOhmic drain for RF applications,”
IEEE Trans. Electron Devices, vol.
63, no. 11, pp. 42184225, Nov. 2016.
[19] C. Tsou, K. Wei, Y. Lian, and S. Hsu*, “2.07kV AlGaN/GaN
Schottky barrier diodes on silicon with high Baliga’s figureofmerit,” IEEE Electron Device
Letters., vol. 37, no. 1, pp.
7073, Jan. 2016.
[20] C.
Lee, H. Hsieh, and S. Hsu*, “A lowpower
miniature 20Gb/s passive/active hybrid equalizer in 90nm CMOS,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 10, pp. 669671, Oct. 2015.
[21] C.
Tsou, C. Lin, Y. Lian, and S. Hsu*, “101GHz InAlN/GaN
HEMTs on silicon with high Johnson’s figureofmerit,” IEEE Trans. Electron Devices, vol.
62, no. 8, pp. 26752678, Aug. 2015.
[22] K.
Tan, T. Chu, and S. Hsu*, “A
76.289.1 GHz phaselocked loop with 15.6% tuning range in 90nm CMOS for
Wband applications,” IEEE Microwave and
Wireless Components Lett., vol. 25, no.
8, pp. 538540, Aug. 2015.
[23] K.
Tan, A. Lo, T. Chu, and S. Hsu*, “A Kband
reconfigurable pulsecompression automotive radar transmitter in 90 nm
CMOS,” IEEE Trans. Microw. Theory Techn.,
vol. 63, no. 4, pp. 13801387, Apr. 2015.
[24] Y.
Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “Drain
Efield manipulation in AlGaN/GaN HEMTs by Schottky extension technology,”
IEEE Trans. Electron Devices,
vol. 62, no. 2, pp. 519524, Feb. 2015.
[25] F.
Chen, M. Kao, Y. Hsu, J. Wu, C. Chiu, S. Hsu, and M. F. Chang, “A 10Gb/s low jitter singleloop
clock and data recovery circuit with rotational phase frequency detector,”
IEEE Trans. Circuits and Systems I
(TCAS I), vol. 61, no. 11, Nov. 2014.
[26] G.
Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y.
Hu, D. J. Thomson, K. Li, P. Wilson, S. Chen, and S. Hsu, “Recent
breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics,
vol. 3, issue 45, pp. 229245, Aug. 2014.
[27] C.
Yeh, Y. Lain, Y. Chiu, C. Liao, D. Moyano, S.
Hsu, and P. Chiu, “Gigahertz
flexible graphene transistors for microwave integrated circuits,” ACS
nano, 2014, 8(8), pp. 76637670, July 2014 (2014 impact factor: 12.033)
[28] S.
Huang, J. Wang, C. Lan, S. Hsu*, S. Li, P. Tseng, C. Lin, and S. Sheu, “An
ultra compact millimeterwave VCO in 3D IC technology,” IEEE Microwave
and Wireless Components Lett, vol. 24, no.
4, Arp. 2014.
[29] C.
Hsiao, T. Su, and S. Hsu*, “CMOS
distributed amplifiers using gatedrain transformer feedback technique,”
IEEE Trans. Microwave Theory Tech.,
vol. 61, no. 8, pp. 29012910, Aug. 2013.
[30] Y.
Lian, Y. Lin, J. Yang, C. Cheng, and S. Hsu*, “AlGaN/GaN Schottky
barrier diodes on silicon substrates with selective Si diffusion for low
onset voltage and high reverse blocking,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 981983, Aug.
2013.
[31] C.
Hsieh, J. Hwang, T. Chang, J. Li, S. Chen, L. Mao, L. Tsai, Y. Chueh, P. Lyu, and S. Hsu, “Enhanced
mobility of organic thin film transistors by water absorption of collagen
hydrolysate gate dielectric,”
Applied Physics Lett. 103, 023303 (2013)
[32] Y.
Hsu, Y. Lin, C. Chiu, J. Wu, S. Hsu, F. Chen, M. Kao, W. Lai, and Y. Hsu, “A
low propagation delay load balanced 4 x 4 switch fabric IC in 0.13 mm CMOS technology,” IEEE Trans. VLSI, vol. 21, no. 8,
pp. 14811495, Aug. 2013.
[33] Y.
Lin, Y. Lian, J. Yang, H. Lu, Y. Huang, C. Cheng, and S. Hsu*, “Contact
engineering of GaNonsilicon power devices for breakdown voltage
enhancement,” Semiconductor
Science and Technology, vol. 28, 074018, July 2013. (invited)
[34] L.
Mao, J. Hwang, T. Chang, C. Hsieh, L. Tsai, Y. Chueh,
S. Hsu, P. Lyu, and T. Liu, “Pentacene
organic thinfilm transistors with solutionbased gelatin dielectric,” Organic
Electronics, vol. 14, issue 4, pp. 11701176, Apr. 2013.
[35] M.
Tsai, S. Huang, and S. Hsu, “ESD
protection design for Vband lownoise amplifier using RF junction
varactors,” Jpn. Journal of Applied Physics,
04CE09, 16, March 2013.
[36] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “Design of
60GHz lownoise amplifiers with low NF and robust ESD protection in 65nm
CMOS,” IEEE Trans. Microwave
Theory Tech., vol. 61, no. 1, pp. 553561, Jan. 2013.
[37] W.
Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel low gatecount pipeline
topology with multiplexerflipflops for serial link,” IEEE Trans. Circuits and Systems I (TCAS
I), vol. 59, no. 11, pp. 26002610, Nov. 2012.
[38] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “A 17.526
GHz lownoise amplifier with over 8KV ESD protection in 65nm CMOS,” IEEE Microwave
and Wireless Component Lett. vol. 22, no. 9, pp. 483485,
Sep. 2012.
[39] Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid SchottkyOhmic drain for high breakdown
voltage and low leakage current,” IEEE
Electron Device Letters, vol. 33, no. 7, pp. 973975, July 2012.
[40] P. Chang, S. Su, S.
Hsu*, W. Cho, and J. Jin, “An
ultralowpower transformerFeedback 60 GHz lownoise amplifier in 90 nm
CMOS,” IEEE
Microwave and Wireless Component Lett. vol. 22,
no. 4, pp. 197199, Apr.
2012.
[41] M.
Tsai and S. Hsu*, “A
VBand LowNoise Amplifier CoDesigned with ESD Network in 65nm RF CMOS,”
Microwave Optical Technology Letters,
vol. 54, no. 3, pp. 820822,
March 2012.
[42] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, “ESDprotected
Kband lownoise amplifiers using RF junction varactors in 65nm CMOS,”
IEEE Trans. Microwave Theory Tech., vol. 59, no. 12, pp. 34553462, Dec.
2011.
[43] C. Hsiao, S. Hsu*, and D. Chang, “A compact Vband
bandpass filter in IPD technology,” IEEE
Microwave and Wireless Component Lett. vol. 21, no. 10, pp. 531533,
Oct. 2011.
[44] M. Tsai and S. Hsu* “A
24GHz lownoise amplifier using RF junction varactors for noise
optimization and CDM ESD protection in 90nm
CMOS,” IEEE Microwave and
Wireless Component Lett., vol. 21, no. 7, pp. 374376, July 2011.
[45] W. Cho and S. Hsu*, “An
ultralowpower 24 GHz lownoise amplifier using 0.13 μm CMOS technology,”
IEEE Microwave and Wireless Component Lett., vol.
20, no. 12, pp. 681683, Dec. 2010.
[46] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou , "A multiESDpath
lownoise amplifier with a 4.3A TLP current level in 65nm CMOS,"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 40044011, Dec.
2010.
[47] P. Chang and S. Hsu*, "A
compact 0.1 GHz to 14 GHz ultrawideband low noise amplifier in 0.13μm
CMOS," IEEE Trans.
Microwave Theory Tech., vol. 58, no. 10, pp. 25752581, Oct. 2010.
[48] W. Chang, K. Tan, and S. Hsu*, "A 56.572.2
GHz transformerinjection Miller frequency divider in 0.13 μm CMOS,"
IEEE Microwave and Wireless Component Letters, vol. 20, no. 7, pp. 393395, July,
2010.
[49] T. Lin, P. Chang, H. chiu, M. Hong, J. Kwo, Y.
Lin, and S. Hsu, "DC
and RF characteristics of selfaligned inversionchannel In_{0.53}Ga_{0.47}As
MOSFETs using MBEAl_{2}O_{3}/Ga_{2}O_{3}(Gd_{2}O_{3})
as gate dielectrics," J.
Vacuum Science and Technology B, 28(3),
May/Jun, C3H14 (2010).
[50] Y. Chang, W. Chang, Y. H. Chang, J. Kwo, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, "Drain
current enhancement and negligible current collapse in GaN MOSFETs with
atomiclayerdeposited HfO_{2} as a gate dielectric," J. Microelectronic Engineering, 87(2010) 20422045.
[51] Y. Lin, Y. Lian, and S. Hsu*, "AlGaN/GaN
HEMTs with low leakage current and high on/off current ratio," IEEE Electron Device Letters, vol. 31, no. 2, pp. 102104, Feb.
2010.
[52] Y. Lin, J. Wu, C. Chan, S. Hsu*, C.
Huang, and T. Lee, “Squaregate
AlGaN/GaN HEMTs with improved traprelated characteristics,” IEEE Trans. Electron Devices,
vol 56, no. 12, pp. 32073211, Dec. 2009.
[53] M. Tsai, S. Hsu*, F. Hsueh, C. Jou, S. Chen, and M. Song, “A wideband low noise
amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS,” IEEE Microwave and Wireless
Component Letters, vol. 19, no. 11, pp. 734736, Nov. 2009.
[54] J. Jin and
S. Hsu*, “A Kband lownoise
amplifier in 0.18μm CMOS technology for sub1V operation,” Microwave
Optical
Technology Letters, vol. 51, no. 9, pp. 22022204, 2009.
[55] M. Kao, J. Wu, C Lin, F. Chen, C.
Chiu, and S. Hsu, “A 10Gb/s
CML I/O circuit for backplane interconnection in 0.18μm CMOS technology,”
IEEE Trans. VLSI Systems, vol. 17, no. 5, pp. 688696,
May 2009.
[56] Y. Wu, S. Hsu*, K. Tan, and Y. Su, "Substrate noise
coupling reduction in LC voltagecontrolled oscillators," IEEE
Electron Device Letters, vol. 30, no. 4, pp. 383385, Apr. 2009.
[57] Y. Wei, S. Hsu*, and J. Jin, "A
lowpower lownoise amplifier for Kband applications," IEEE
Microwave and Wireless Component Lett., vol. 19, no. 2, pp. 116118, Feb. 2009.
[58] J. Jin and
S. Hsu*, "A
75dBΩ 10Gb/s transimpedance amplifier in 0.18μm CMOS technology,"
IEEE Photon. Tech. Lett., vol. 20, no. 24, pp. 21772179, Dec. 2008.
[59] J. Jin and
S. Hsu*, "A
miniaturized 70GHz broadband amplifier in 0.13µm CMOS technology," IEEE
Trans. Microwave Theory Tech., vol. 56, no. 12, pp. 30863092, Dec.
2008.
[60] C. Chan, S. Chen, M. Tsai, and S.
Hsu*, "Wiring effect
optimization in 65nm lowpower NMOS," IEEE Electron
Device Letters, vol. 29, no. 11, pp. 12451248, Nov. 2008.
[61] C. Chan, Y. Huang, J. Chen, S. Hsu*,
and Y. Juang, "STItogate
distance effects on flicker noise characteristics in 0.13µm CMOS," J. SolidState Electronics, vol. 52, pp. 11821187, 2008.
[62] J. Jin and
S. Hsu*, “A 40Gb/s
transimpedance amplifier in 0.18µm CMOS technology,” IEEE J.
SolidState Circuits, vol. 43, no. 6, pp. 14491457, June, 2008.
[63] J. Jin, S.
Hsu*, T. Yeh, M. Yang, and S. Liu, “Fully analytical
modeling of Cu interconnects up to 110 GHz,” Jpn.
Journal of Appl. Physics, vol. 47, no. 4, pp. 24732476, Apr. 2008.
[64] J. Jin and
S. Hsu*, “A 1V, 45GHz
balanced amplifier with 21.5dB gain using 0.18μm CMOS technology,” IEEE
Trans. Microwave Theory Tech., vol. 56, no. 3, pp. 599603, March
2008.
[65] J. Jin and
S. Hsu*, “A 0.18μm CMOS
balanced amplifier for 24GHz applications,” IEEE J. SolidState
Circuits, vol. 43, no. 2, pp. 440445, Feb. 2008.
[66] C. Chan, Y. Lin, J. Jin, S. Hsu*, Y. Huang, and Y. Juang,
“Impact
of STI effect on flicker noise in 0.13µm RF NMOSFETs,” IEEE Trans.
Electron Devices, Vol. 54, No.
12, pp. 33833392, Dec., 2007.
[67] H. Lin, S. Hsu*, C. Chan, and Y. Lin,
“A wide lockingrange
frequency divider for LMDS applications,” IEEE Trans. Circuits
and Systems II, Vol. 54, No. 9, pp. 750754, Sep. 2007.
[68] Y. Lin, S. Koa, C. Chan, S. Hsu*, H.
Lee, and S. Gwo, "High current density
InN/AlN heterojunction fieldeffect transistor with a SiN_{x} gate
dielectric layer," Applied Physics Letters 90, 142111, 2007.
[69] C. Chan, T. Lee, S. Hsu*, L. Chen,
and Y. Lin, “Impacts
of gate recess and passivation on AlGaN/GaN HEMTs,” Jpn.
Journal of Appl. Physics, Vol. 46, No. 2,
pp. 478484, Feb. 2007.
[70] T. Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M. Hong, “Interfacial trap
characteristics in depletion mode GaAs MOSFET’s,” Journal of Crystal Growth,
Vol. 301302, April 2007, pp. 10091012.
[71] Y. Lin, S. Hsu*, J. Jin, and C. Chan, “A
3.1–10.6 GHz ultrawideband CMOS low noise amplifier with currentreused
technique,” IEEE Microwave and Wireless Component
Letters, vol. 17, No. 3, Mar. 2007.
[72] J. Jin, S.
Hsu*, M. T. Yang, and S. Liu, “Lowloss
differential semicoaxial interconnects in CMOS process,” IEEE Trans.
Microwave Theory Tech., vol. 54, no. 12, pp. 43334340,
Dec. 2006.
[73] S. Hsu*, H. Zhu, “Wband
multiplering resonator by standard 0.18um CMOS technology,” IEEE
Microwave and Wireless
Component Lett., pp. 832834, Dec. 2005.
[74] J. A. Yeh, C. A. Chang, C. C. Cheng,
J. Y. Huang, and S. Hsu, “Microwave
characteristics of liquid crystal tunable capacitors,” IEEE Electron Device Lett., vol. 26, pp.
451453, July 2005.
[75] S. Hsu and D. Pavlidis,
“A
comparison of lowfrequency noise characteristics and noise origins in
InPbased NPN and PNP heterojunciton bipolar transistors,” IEEE Trans. Electron Devices, vol.
50, no. 9, pp. 19741982, Sep. 2003.
[76] S. Hsu, D. Pavlidis,
and D. Sawdai, “Lowfrequency
noise characteristics of PNP InAlAs/InGaAs HBTs,” IEEE Electron
Device Letters, vol. 23, no. 12, pp.
688690, Dec. 2002.
[77] D. Cui, D. Pavlidis,
S. Hsu, and A. Eisenbach, “Comparison
of DC, highfrequency performance of zincdoped and carbondoped InP/InGaAs
HBTs grown by metalorganic chemical vapor deposition,” IEEE Trans.
Electron Devices, vol. 49, no. 5, pp. 725732, May, 2002.
[78] D. Cui, D. Pavlidis,
S. Hsu, D. Sawdai, P. Chin, and T. Block, “First
demonstration of monolithic InPbased HBT amplifier with PNP active load,”
IEEE Electron Device Letters, vol. 23, no. 3, pp. 114117, Mar.
2002.
[79] D. Cui, S. Hsu, and D. Pavlidis, “DC
and high frequency characterization of Metalorganic Chemical Vapor
Deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor,”
Jpn. J. of Appl. Phys. Vol. 41, no.
2B, pp. 11431149, Feb, 2002.
[80] D. Cui, S. Hsu and D. Pavlidis, “Kaband
oscillators using InPbased HBTs,” J.
of SolidState Electronics, vol. 46, no. 2, pp. 249253, Feb. 2002.
[81] D. Buttari,
A. Chini, G. Meneghesso,
E. Zanoni, D. Sawdai,
D. Pavlidis, and S. Hsu “Measurements
of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp
HBTs,” IEEE Electron Device Letters, vol. 22, no. 5, pp.
197199, May. 2001.
[82] D. Sawdai,
K. Yang, S. Hsu, D. Pavlidis, and G. Haddad, “Power
performance of InPBased single and doubleheterojunction bipolar transistors,” IEEE Trans.
Microwave Theory Tech., vol. 47, pp. 14491456, Aug. 1999.
[83] S. Hsu, B. Bayraktaroglu,
and D. Pavlidis, “Comparison of
conventional and ThermallyStable Cascode (TSC) AlGaAs/GaAs HBTs for microwave power
applications,” Journal of SolidState Electronics, vol. 43, no.
8, pp. 14291436, 1999.

[1]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 46.7dB gain 9.3K noise temperature
5.8mW twofold current reuse dual noisecanceling LNA in 28nm CMOS for
qubit readout,” to be presented in IEEE RFIC Symposium, Washington DC,
June 2024.
[2]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 0.01to2.6GHz twofold current
reuse noisecanceling LNA for quantum applications,” to be presented in IEEE Int'l Symp.
Circuits & Systems (ISCAS), Singapore, May 2024.
[3]
Y. Chang, J. Wang, Y. Chang, C.
Chen, D. Chang, Y. Huang, and S. Hsu, “A Kaband high power and low phase
noise GaN MMIC oscillator with a compact
openloop folded resonator filter,” to be presented in IEEE Int. Microwave Symposium (IMS), Washington DC,
June 2024.
[4]
M. Chaubey, Y. Chang, P. Wu, H. Tsai,
and S. Hsu, “A gmboosting inductorless noisecanceling low noise amplifier
in 40nm CMOS for quantum applications,” to be presented in IEEE
Int. Microwave Symposium (IMS),
Washington DC, June 2024.
[5]
P. Huang, X. Chen, H. Wang, S.
Hsu, and R. Wong, “Comprehensive study of HumanBodyModel electrostatic
discharge on pGaN gate power HEMT with AlGaN barrier spacers,” to be presented in Intl. Symp. Power Semiconductor Devices and ICs (ISPSD),
Bremen, June 2024.
[6]
H. Wang, C. Lai, P. Huang, Y.
Lin, S. Hsu, and R. Wong, “Comprehensive study on trappinginduced dynamics
in βGa2O3 Schottky barrier diodes under continuous switching stress,” to
be presented in Intl. Symp. Power
Semiconductor Devices and ICs (ISPSD), Bremen, June 2024.
[7]
C. Chen, J. Wang, S. Hsu, Y.
Chang, C. Hsieh, D. Chang, and Y. Huang, “Ultralow noise voltage supply
using CMC filter for GaN oscillator phase noise
measurements,” IEEE AsiaPacific
Microwave Conference (APMC),
Taipei, Dec. 2023.
[8]
M. Chaubey, Y. Liu, P. Wu, H. Tsai,
and S. Hsu, “A
miniature 10MHz‒3GHz sub 1dB NF cryogenic
inductorless noisecanceling lownoise amplifier for qubit readout,” IEEE Int. Microwave Symposium (IMS),
San Diego, June 2023.
[9]
J. Wang, Y. Chang, Y. Liu, S. Li, D. Chang, Y. Huang, and S.
Hsu, “A
110GHz pushpush balanced Colpitts oscillator Using 0.15µm GaN HEMT
technology,” IEEE Int. Microwave
Symposium (IMS), San Diego, June 2023.
[10]
Y. Chang, T. Lin, J. Wang, S. Lin, C. Hsieh, Yi Huang, S. Hsu,
and D. Chang, “A
miniature Wband substrateintegrated waveguide cavity bandpass filter
using GaAsbased IPD technology,”” IEEE
Int. Microwave Symposium (IMS), San Diego, June 2023.
[11]
J. Wang, Y. Chang, D. Chang, S. Hsu, and Y. Huang, “Wband
cavitybacked foldedslot antenna using GaAs integrated passive device
technology,” Intl. Workshop on
Antenna Technology (iWAT), Aalborg, Denmark,
May, 2023.
[12]
S. Hsu, S. Li, R. Joshi, M. Liu, S. D. Joseph, J. Wang, Y.
Liu, Y. Chang, and Y. Huang, “GaN HEMTs for
Highfrequency power applications,” AsiaPacific
Workshop on Widegap Semiconductors Taoyuan, Nov. 2022. (invited)
[13]
Y. Chang, P. Wang, T. Lin, C. Hsieh, D. Chang, and S. Hsu, “Chiplevel
highfrequency EMC strategies and measurement techniques,” IEEE Int. Symp.
RadioFrequency Integration Technology, Busan, Aug. 2022. (invited)
[14]
Y. Chang, J. Wang, T. Lin, C.
Hsieh, Y. Huang, S. Hsu, and D. Chang, “3D
chiplevel broadband measurement technique for radiated EM emission,” IEEE Int. Microwave Symposium (IMS), Denver, June 2022.
[15]
S. D. Joseph, S. Hsu, and Y.
Huang, “Rectennas for wireless energy harvesting and power transfer,” IEEE Int. Symp. RadioFrequency
Integration Technology, Taipei, Aug. 2021. (invited)
[16]
M. Wu, S. Hong, H. Su, and S. Hsu, “A
64Gbaud transimpedance amplifier in 130nm SiGe technology with effective
broadband techniques,” IEEE Int.
Microwave Symposium (IMS), Atlanta, June 2021.
[17]
Y. Chang, T. Lin, C. Hsieh, P. Wang, S. Hsu, and D. Chang, “A
low EM susceptibility VCO with fourleafclovershaped inductor verified
via chiplevel 3D nearfield measurement technique,” t IEEE Int. Microwave Symposium (IMS),
Atlanta, June 2021.
[18]
T. Lee, J. Zhang, S. Hong, C.
Hsu, S. Li, S. Chen, S. Sheu, C. Wu, and S. Hsu, “A
low power CMOS driver integrated with MachZehnder modulator for PAM4
optical transmissions,” European Microwave
Conf. (EuMC), Jan. 2021.
[19]
R. Joshi, M. Liu, and S. Hsu, “A
high efficiency compact class F GaN MMIC power amplifier for 5G
applications,” European Microwave
Conf. (EuMC), Jan. 2021 (Best poster pitch
prize).
[20]
Y. Chang, T. Lin, C. Hsieh, Y. Chang, M. Yen, S. Hsu, and D.
Chang, “Technique of measuring injection locking of VCO,” IEEE AsiaPacific Symp.
on Electromagn. Compat. (APEMC), Sydney, May
2020.
[21]
S. D. Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Song, “A novel duplexing antenna for
feedback wireless power transfer,” 14th
European Conf. Antennas and Propagation (EuCAP
2020), Copenhagen, Mar. 2020.
[22]
Y. Chang, T. Lin, C. Hsieh, D. Chang, S. Hsu, M. Yen, and J.
Dong, “Discrete
1Ω probe by using flipchip IPD resistor and amplifier for inspecting EMI
of a packaged IC,” IEEE CPMT Symp. pp. 163164, Japan (ICSJ), Nov. 2019.
[23]
S. D Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li, “A novel transmission line
technique to realize broadband rectenna for WEH and WPT applications,” 2019
Asian Wireless Power Transfer Workshop (AWPT), Xian, Oct. 2019.
[24]
C. Li, H. Wang, Y. Liu,
S. D. Joseph, Y. Huang, and S. Hsu, “Low turnon voltage and high breakdown
GaN Schottky barrier diodes for RF energy
harvesting applications,” Intl. Conf.
on Solid State Devices and Materials (SSDM), Nagoya, Sept. 2019.
[25]
C. Li, Y. Liu, W. Hsu, C. Chuang, J. Liu, and S. Hsu, “High
frequency AlGaN/GaN Tgate
HEMTs on extremely low resistivity silicon substrates,” Intl. Conf. on Solid State Devices and
Materials (SSDM), Nagoya, Sept. 2019.
[26]
T. Chen, H. Su, T. Lee, and S. Hsu,
“A
64Gb/s 4.2Vpp modulator driver using stackedFET distributed amplifier
topology in 65nm CMOS,” IEEE
Int. Microwave Symposium (IMS), Boston, June 2019.
[27]
S. D Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li " A novel miniaturized
broadband YagiUda antenna with enhanced gain for
wireless energy harvesting applications," 2019 13th European
Conference on Antennas and Propagation (EuCAP), Krakow, May, 2019.
[28]
Y. Chang, P. Wang, H. Hsiao, T. Lin, S. Hsu, M. Yen, M Lin,
and D. Chang, "EMS Characterization of LDO with OnChip Decaps by Using Direct RF Power Injection Method,"
IEEE Intl. Workshop on
Electromagnetics (iWEM), Nagoya, Aug., 2018.
[29]
Y. Chang, T. Lin, P. Wang, S. Hsu, M. Yen, C. Hung, and D.
Chang, "Implementation of Certified 150Ω Voltage Probe for IEC
619674 Conducted Electromagnetic Emission Measurement," Intl. Conf. Precision Electromagnetic
Measurements (CPEM), Pairs, July, 2018.
[30]
S. Li, S. Hsu, J. Zhang, and K. Huang, “A sub6 GHz
compact GaN MMIC Doherty PA with a 49.5% 6 dB backoff PAE for 5G
communications,” IEEE Int.
Microwave Symposium (IMS), Philadelphia,, June
2018, pp. 805807.
[31]
S. Joseph, Y. Huang, S. Hsu, M. Stanley, and C. Song, “A
novel dualpolarized millimeterwave antenna array with harmonic rejection
for wireless power transmission,” 12th
European Conf. Antennas and Propagation (EuCAP
2018), London, Apr. 2018.
[32]
Y. Chang, Y. Ou, C. Hsieh, P. Wang,
S. Hsu, M. Yen, Y. Chang, C. Chen, and D. Chang, “Measurement technique for
high precision and noise sensitive ICs using multiple outputbias board
with low baseband noise,” in IEEE
International Symposium on Electromagn. Compat.
(EMC), pp. 6164, Washington DC, Aug. 2017.
[33]
P. Wang, G. Su,
Y. Chang, D. Chang, and S. Hsu, “A currentreuse quadrature phase
oscillator with frequency pulling suppression technique,” IEEE Int. Microwave Symposium, Honolulu,
June 2017.
[34]
Y. Chang, P. Wang, S. Hsu, M. Yen, Y.
Chang, J. Dong, T. Lin, and D. Chang, “Implementation
of chiplevel EMC strategies in 0.18 μm CMOS technology,” IEEE AsiaPacific Symp.
on Electromagn. Compat. (APEMC), pp. 390392,
Seoul, June 2017. (Best poster paper award)
[35]
Y. Chang, T. Lin, P. Wang, S. Hsu,
M. Yen, Y. Chang, M. Lin, and D. Chang, “The design of current probe in the
IEC conducted emission measurement above 1 GHz,” Int. Symp. on Antennas and Propagation
(ISAP), Okinawa, Oct. 2016.
[36]
S. Hsu, Y. Li, C. Liao,
P. Wang, Y. Liu, P. Chiu, S. Chen, K. Li, D. Thomson, and G. T. Reed,
“Integration of high speed and low power CMOS frontend circuits with
silicon photonic devices,” Int. Conf.
on Solid State Devices and Materials, Sep. 2016. (invited)
[37]
S. Chen, P. Chiu, Y. Li, S. Hsu, K. Li, D.
J. Thomson, and G. Reed, “High speed and
low power siliconbased receiver frontend for optical interconnect,” IEEE Intl. Conf. Group IV Photonics (GFP),
Aug. 2016.
[38]
D. J. Thomson, C. G. Littlejohns,
K. Li, M. Nedeljkovic, A. Z. Khokhar, F. Y. Gardes, G. Z. Mashanovich, C.
Lacava, P. Petropoulos, D. J. Richardson, M. S. Rouifed, H. Qiu, T. G. Xin,
T. Hu, Z. Zhang, H. Wang, S. Hsu, and G. T. Reed, “Integrated silicon
optical modulators,” Progress in
Electromagnetics Research Symposium (PIERS),
Aug. 2016. (invited)
[39]
S. Hsu, C. Tsou, Y. Lian, and Y. Lin, “GaNonsilicon
devices and technologies for RF and microwave applications,” IEEE Intl. Symp.
RadioFrequency Integration Technology, Aug. 2016. (invited)
[40]
P. Wang, M. Chou, Y. Chen, Y. Chang, D.
Chang, and S. Hsu, “A Kuband
lowphasenoise transformer coupled VCO for satellite communications,” IEEE Intl. Symp.
RadioFrequency Integration Technology, Aug. 2016.
[41]
Y.
Chang, P. Wang, S. Hsu, T. Lin, C. Hsieh, and D. Chang, “A Vband CPW Bandpass
Filter with Controllable Transmission Zeros in Integrated Passive Devices
(IPD) Technology,” IEEE Int.
Microwave Symposium (IMS), San Francisco, May 2016.
[42]
Y. Chang, P. Wang, S. Hsu, Y. Chang, C. Chen, and D. Chang,
“Impact and improvement of resistor process variation on RF passive circuit
design in Integrated Passive Devices (IPD) technology,” Intl. Conf. on Solid State Devices and Materials (SSDM), pp.
7475, Sapporo, Sept. 2015.
[43]
P. Wang, Y. Shen, M. Chou, T. Wu, M. Chen,
Y. Chang, D. Chang, and S. Hsu, “A BiCMOS
Monolithic Kaband DownConverter for satellite communication systems,”
IEEE Int. Microwave Symposium, San
Francisco, May 2015.
[44]
Y. Chang, P. Wang, S. Hsu, M.
Yen, Y. Chang, C. Chen, and D. Chang, “Design of
the Multifunction ICEMC Test Board with OffBoard Probes for Evaluating a
Microcontroller,” IEEE
AsiaPacific Symp. on Electromagn.
Compat. (APEMC), pp. 223226, Taipei, May 2015.
[45]
S. Hsu, P. Wang, P. Su,
M. Chou, Y. Chang, and D. Chang, “Design of Ku/Ka band downconverter
frontend for digital broadcast satellite receivers,” IEEE Int. Wireless Symposium, Mar. 2015. (invited)
[46]
P. Wang, T. Wu, M. Chou, M. Chen, Y.
Chang, D. Chang, and S. Hsu, “Design of wideband subharmonic receiver
frontend using 0.18um BiCMOS technology,” IEEE Int. Wireless Symposium, Mar.
2015.
[47]
P. Wang, T. Wu, M. Chen, Y. Shen, Y.
Chang, D. Chang, and S. Hsu, “A
low phase noise classC VCO using novel 8shaped transformer,” IEEE Int'l Symp.
Circuits & Systems (ISCAS), May 2015.
[48]
P. Wang, Y. Shen, M. Chou, Y. Chang, T.
Wu, D. Chang, and S. Hsu, “Design of fully integrated receiver frontend
for VSAT applications,” IEEE 15th
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
(SiRF), Jan., 2015.
[49]
P. Wang, Y. Shen, M. Chou, K. Chuang, Y.
Chang, D. Chang, and S. Hsu, “Design of 24 GHz CMOS VCO using Armstrong
topology with asymmetric transformer,” IEEE
AsiaPacific Microwave Conference (APMC),
2014.
[50]
P. Wang, Y. Chang, K. Chuang,
D. Chang, and S. Hsu, “A low phase noise 24
GHz CMOS quadratureVCO using PMOSsourcefollower coupling technique,”
Proc. 44^{th} European
Microwave Circuits Conf. (EuMC), Oct. 2014, pp. 572575.
[51]
J. Y.C. Liu, C. Chan, and S.
Hsu, “A
Kband power amplifier with adaptive bias in 90nm CMOS,” Proc. 44^{th}
European Microwave Circuits Conf.
(EuMC),
Oct. 2014, pp. 13761379.
[52]
P. Wang, M. Chou, P. Su,
Y. Chang, K. Chuang, and S. Hsu, “A fully integrated
Kuband downconverter frontend for DBS receivers,” IEEE Int. Microwave Symposium, Tampa
Bay, June 2014.
[53]
Y. Chang, P. Wang, S. Hsu, Y. Chang,
C. Chen,
H. Cheng,
and D. Chang,
“Investigation
on realizing
1Ω current
probe
complied
with IEC 619674 direct coupling method,”
in Proc. International Symposium on
Electromagnetic Compatibility (EMC’14), pp. 573576, Tokyo, Japan, May
2014. (Best paper award
finalist)
[54]
M. Tsai and S. Hsu, “ESD protection design
for microwave/millimeter wave lownoise amplifiers,” IEEE Int. Wireless Symposium, Mar.
2014. (invited)
[55]
Y. Chang,
S.
Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, ”The
direct
RF power
injection
method
up to 18 GHz for Investigating IC's Susceptibility,” in Proc. International Workshop on
Electromagnetic Compatibility of Integrated Circuits (EMCCompo), pp. 167170, Nara, Japan, Dec.
2013.
[56]
G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. Wilson, L. Zimmermann, H.
Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli,
K. Debnath, T. Krauss, and L. O’Faolain, “Options for silicon
based modulators,” Frontiers
in Optics 2013, Orlando, October 2013. (invited)
[57]
G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. W. Wilson, L. Zimmermann,
H. Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli,
K. Debnath, T. Krauss, and L. O’Faolain, “Silicon optical modulators for
short reach interconnect,” Int. Conf.
on Solid State Devices and Materials (SSDM), Fukuoka, Sep. 2013. (invited)
[58]
C. Tsou, Y. Lian, J. Hung, Y.
Lin, and S. Hsu, “AlGaN/GaN
HEMTs on silicon with hybrid source/drain for sourcedrain scaling and
frequency dispersion suppression,” 2013 Int.
Conf. on Solid State Devices and Materials (SSDM). (late news)
[59]
D. Thomson, F. Gardes, Y. Hu, G. Mashanovich, G. Reed, L. Zimmermann, D. Knoll, S. Lischke, H. Porte, B. Goll,
H. Zimmermann, L. Ke, P. Wilson, S. Chen, S. Hsu,
G. Duan, A. Le Liepvre, C. Jany,
A. Accard, M. Lamponi,
D. Make, F. Lelarge, S. Messaoudene,
D. Bordel, J. Fedeli, S. Keyvaninia,
G. Roelkens, and D. Van Thourhout,
“Integration
of high performance silicon optical modulators,” IEEE Group IV Photonics, Seoul, Aug.
2013. (invited)
[60]
Y. Chang, S. Hsu, H. Cheng, and
D. Chang, “The practical measurement setup of DPI method above 1 GHz for
ICs,” in IEEE Proc. AsiaPacific Symp. Electromagnetic Compatibility, Melbourne, May 2013. (Best
paper award)
[61]
M. Tsai, H. Hsieh, C. Lin, L.
Chu, S. Hsu, J. Jin, T. Yeh, C. Jou, F. Hsueh, and M. Ker, “A 5667
GHz lownoise amplifier with 5.1dB NF and 2.5kV HBM ESD protection in
65nm CMOS,” in Proc. IEEE AsiaPacific Microwave Conference, pp.
747749, Kaohsiung, Dec. 2012.
[62]
M. Tsai, S. Huang, and S. Hsu,
“ESD protection design for Vband lownoise amplifier using RF junction
varactors,” Int. Conf. on Solid State Devices and
Materials (SSDM), Kyoto, Sep. 2012.
[63]
K. Tan, C. Lai, P. Lu, C. Tu,
G. Huang, J. Wu, S. Hsu, and T. Chu, “A 79GHz UWB
PulseCompression Vehicular Radar in 90nm CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.
[64]
M. Tsai, S. Hsu, T. Yeh, C. Jou, and F. Hsueh, “A Vband
lownoise
amplifier
with 5.3dB NF and over 8kV ESD protection in 65nm RF
CMOS,” IEEE Int. Microwave
Symposium,
Montreal, June 2012.
[65]
Y. Chang, B. Wang, S. Hsu, Y. Chang, C. Chen, Y. Juang, H. Cheng and D. Chang, “The evaluation
flow
for EMC behavior
of RF ICs,” in Proc. IEEE
AsiaPacific Symp. on Electromagn.
Compat ,
pp. 321324, Singapore, May, 2012.
[66]
S. Hsu, W. Cho, S. Chen, and J. Jin,
“CMOS Broadband Amplifiers for Optical Communications and Optical
Interconnects,” IEEE Int. Symp. RadioFrequency Integration Technology,
Beijing, Dec. 2011. (invited)
[67]
Y. Chang, D. Chang, S. Hsu, J. Lee, S. Lin, and Y. Juang, “A
matrixcomputation based methodology for extracting the SParameters of
interconnects in advanced packaging technologies,” in Proc. IEEE AsiaPacific Microwave Conference, pp.
19091912, Dec. 2011.
[68]
S. Hsu and M. Tsai, “Lownoise
amplifiers with robust ESD protection for RF SOC,” Inter. SoC Design Conference, Jeju,
Nov. 2011. (invited)
[69]
Y. Chang, S. Hsu, D. Chang, J. Lee, S. Lin, and Y. Juang, “A
deembedding method for extracting Sparameters of vertical interconnect in
advanced packing,” in Proc. IEEE
Int. Conf. Electrical
Performance of Electronic Packaging and Systems, pp.
219222, San Jose, Oct. 2011.
[70]
C. Yu, C. Huang, P. Chu, K. Chen, S. Hsu, H. Chiu, and F.
Zhao, “Highvoltage AlGaN/GaN
HEMTs on Si substrate with implant isolation,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya,
Sep. 2011.
[71]
Y. Lin, Y. Lian, H. Lu, Y. Huang, and S. Hsu, “AlGaN/GaN HEMTs on silicon
with hybrid schottkyohmic drain for improved DC
characteristics,” Int. Conf. on Solid
State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[72]
J. Wang, T. Huang, Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku, and C. Lin, “Testkey design of through
silicon vias (TSVs) for accurate deembedding and RF model parameters
extraction,” Int. Conf. on Solid
State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[73]
M. Tasi, S. Hsu, T. Yeh, J. Jin, H. Hsueh, C. Jou, and F.
Hsueh, “A
24GHz lownoise amplifier codesigned with ESD protection using junction
varactors in 65nm RF CMOS,” IEEE
Int. Microwave Symposium, Baltimore, June 2011.
[74]
F. Chen, M. Kao, Y. Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu, “A 10 to 11.5 GHz rotational
phase and frequency detector for clock recovery circuit,” IEEE Int. Symp.
Circuits and Systems (ISCAS), Rio de Janeiro, May 2011 (Best Student
Paper Contest Finalist).
[75]
M. Tasi, S. Hsu, F. Hsueh, C. Jou, M. Song, J. Tseng, T. Chang, and D. Nag, “An analog
frontend circuit with dualdirectional SCR ESD protection for UHFband
passive RFID Tag,” IEEE Int. Conf.
RFID, Orlando, pp. 206209, April 2011.
[76]
C. Luo, Y. Wu, J. Wang, and S. Hsu, “RF modeling of through
silicon vias (TSVs) in 3D IC,” Proc.
Int. Conf. on Solid State Devices and Materials (SSDM), pp. 239240,
Tokyo, Sep. 2010.
[77]
C. Hsiao, W. Wang, T. Su, Y. Wu, and
S. Hsu, “A gatedrain coupling distributed amplifier
in 90nm CMOS technology,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 810811, Tokyo, Sep. 2010.
[78]
W. Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel
MUXFF circuit for low power and high speed serial
link interfaces,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 43054308,
Paris, May 2010.
[79]
Y. Hsu, M. Kao, F. Chen, C. Chiu, J. Wu, and S. Hsu, “A 32Gbps low propagation
delay 4´4 switch IC for
feedbackbased system in 0.13 µm CMOS technology,” IEEE Int. Symp. Circuits and Systems
(ISCAS), pp. 581584, Paris, May 2010.
[80]
M. Tasi, F. Hsueh, C. Jou, M. Song, J. Tseng, S. Hsu, and S. Chen, “A
6.5 kV ESDprotected low noise amplifier in 65nm CMOS,” IEEE MTTS Int. Microwave Symp. Dig.,
pp.485488, Anaheim, May 2010.
[81]
S. Hsu and J. Jin, “CMOS
broadband amplifiers for optical communications,” Int. Symp.
Microwave and Optical Technology, New Delhi, India, pp. 12511254, Dec. 2009 (invited).
[82]
Y. Lin, Y. Lian, S. Hsu, and T. Lee, “Low leakage AlGaN/GaN HEMTs with a high On/Off current ratio,” Int. Conf. on Solid State Devices and Materials (SSDM), Miyagi,
Oct. 2009.
[83]
Y. Lian, Y. Lin, and S. Hsu, “High breakdown GaN Schottky diodes with buried Player structure,” Int. Conf. on Solid State Devices and
Materials (SSDM), Miyagi, Oct. 2009.
[84]
M. Tasi, S. Hsu, and K. Tan, “A low noise amplifier
codesigned with ESD protection circuit in 65nm CMOS,” IEEE MTTS Int. Microwave Symp. Dig., pp. 573576, Boston, June 2009.
[85]
S. Hsu, “Design techniques for CMOS broadband
amplifiers,” CMOS Emerging
Technologies Workshops, Banff, Feb. 2009 (invited).
[86]
Y. Lin, J. Wu, S. Hsu, C. Chan, and Y. Lian, “GaNbased Schottky varactors for highpower RF
applications,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 506507, Ibaraki, Sep. 2008.
[87]
J. Jin and S. Hsu, “A 70GHz
transformerpeaking broadband amplifier in 0.13μm CMOS technology,” IEEE MTTS Int. Microwave Symp. Dig., Atlanta, pp. 285288, June 2008.
[88]
J. Jin and S. Hsu, “Wideband CMOS
transimpedance amplifier design using transformerpeaking technique,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 492493, Ibaraki, Sep. 2007.
[89]
J. Jin, S. Hsu, T. Yeh, M. Yang, S.
Liu, “Fully
analytical modeling of Cu interconnects up to 110 GHz,” Proc. Int. Conf. on
Solid State Devices and Materials(SSDM), pp. 908909,
Ibaraki, Sep. 2007.
[90]
Y. Lin, T. Lee, Y. Wang, and S. Hsu, “Layout optimization
of AlGaN/GaN HEMTs for highpower applications,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 156157, Ibaraki, Sep. 2007.
[91]
S. Wang, Y. Wu, S. Hsu, and C. Chan, “Substrate coupling
effect under various noise injection topologies in LCvoltage controlled
oscillator,” IEEE RFIC Symp., pp. 705708, Hawaii, June 2007.
[92]
C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y. Juang,
“Edgeextended
design for improved flicker noise characteristics in 0.13µm RF NMOS,” IEEE
MTTS Int. Microwave Symp., pp. 441444,
Hawaii, June 2007.
[93]
C. Chiu, Y. Hsu, M. Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F.
Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu, “A scalable load balanced Birkhoffvon
Neumann symmetric TDM switch IC for highspeed networking
applications,” IEEE
Int. Symp. Circuits and Systems, pp.
27542757, New Orleans, May 2007.
[94]
L. Fan, S. Hsu, J. Jin, C. Hsieh, W.
Lin, H. Hao, H. Cheng, K. Hsueh, and C. Lee, “Miniaturization of magnetic
resonance microsystem components for 3D cell imaging,” IEEE Int. SolidState Circuit Conf. (ISSCC), San Francisco, pp.
166168, Feb. 2007.
[95]
Y. Hsu, M. Kao, H. Tzeng, C. Chiu, J. Wu, and S. Hsu, “A
20Gbps scalable load balanced Birkhoffvon Neumann symmetric TDM switch IC
with SERDES interfaces,” IEEE
proc. 12th Asia and South Pacific Design Automation Conf., pp. 2326, Yokohama, Jan. 2007.
[96]
C. Chan, P. Tsai, T. Lee, S. Hsu, J. Kwo,
and M. Hong, “Flicker
noise characteristics in GaAs MOSFETs,” MBE conf., Durham, Sep.
2006.
[97]
C. Chan, J. Jin, Y. Lin, S. Hsu, and
Y. Juang, “STI effect on
flicker noise in 0.13µm RF NMOS,” European Solidstate Device
Conference (ESSDERC), pp.101104, Montreux,
Sep. 2006.
[98]
J. Jin and S. Hsu, “40Gb/s
transimpedance amplifier in 0.18µm CMOS technology,” European
Solidstate Circuit Conference (ESSCIRC), pp. 520523, Montreux, Sep.
2006.
[99]
J. Jin, S. Hsu, M. Yang, and S. Liu,
“Lowloss
single and differential semicoaxial interconnects in standard CMOS
process,” IEEE MTTS Int. Microwave Symp.
Dig., pp. 420423, San Francisco, June 2006.
[100] C. Hsiao, M. Kao, C.
Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “3.2
Gbit/s CML transmitter with 20:1 multiplexer in 0.18µm CMOS technology,”
IEEE Int. Conf. Mixed Design of Integrated Circuits and
Systems, pp. 179183, June 2006.
[101] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu “InP/GaAsSb/InP DHBT technology and its application to MMwave
integrated oscillators,” proc. 30th Workshop on Compound
Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Fiskebäckskil,
S. 5153, May 2006.
[102] D. Pavlidis, P. Valizadeh, and
S. Hsu, “AlGaN/GaN
high electron mobility transistor (HEMT) reliability,” European
Microwave Conf., Paris, pp. 265268, Oct. 2005.
[103] C. Chiu, J. Wu, S.
Hsu, M. Kao, C. Jen, and Y. Hsu, “A 10Gb/s
wideband currentmode logic I/O interface for highspeed interconnect in
0.18µm CMOS technology,” IEEE Int. SOC Conf., pp. 257260, Sep.
2005.
[104] L. Fan, W. Huang, C.
Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu, A. Jin,
K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien,
A. Yeh, J. Chen, W. Wu, and C. Lai, “Magnetic
resonance Microsystems for life science applications,” Proc. of
Transducers 2005, pp.19982001, Seoul, Korea, June 2005.
[105] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, “First demonstration
of lowpower monolithic transimpedance amplifier using InP/GaAsSb/InP
DHBTs,” IEEE MTTS Int.
Microwave Symp. Dig., pp. 101103, June 2005.
[106] S. Hsu and D. Pavlidis, “Analysis
and modeling of dispersion characteristics in AlGaN/GaN MODFETs,” proc.
25th IEEE GaAs IC Symposium, pp. 119122, Nov. 2003.
[107] D. Pavlidis, S. M. Hubbard, S. Hsu and S. Seo “AlGaN/GaN and AlN/GaN heterostructuredevices: A
possible device technology for high RF power wireless transmission” 2003 JapanUnited States Joint Workshop on
Space Solar Power System (JUSPS'03), July, 2003, Kyoto, Japan
[108] X. Zhu, S. Hsu and
D. Pavlidis, “First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs,” Topical Workshop on
Heterostructure Microelectronics for Information Systems Applications,
Okinawa, Japan, pp. 1819, Jan. 2003.
[109] D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh, “GaN device and
material considerations: A tutorial and general discussion” 2002 GaAs REL Workshop, Monterey,
Oct. 2002.
[110] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Impacts
of RF stress on dispersion effects andpower characteristics for AlGaN/GaN
HEMTs,” proc. 24th IEEE GaAs
IC Symposium,
pp. 8588, 2002.
[111] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Characterization
and analysis of gate and drain lowfrequency noise in AlGaN/GaN HEMTs,” proc. IEEE Lester
Eastman conference, pp. 453460, 2002.
[112] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Study
on largesignal linearity and efficiency of AlGaN/GaN MODFETs,” proceeding of 32nd European microwave
conference,
pp. 14, 2002.
[113] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Gate and drain noise characteristics of AlGaN/GaN HEMTs and study of
their origins,” proc. 26th Workshop
on Compound Semiconductor Devices and Integrated Circuits in Europe
(WOCSDICE), Chernogolovka, pp. 115116, May
2002.
[114] D. Cui, D. Pavlidis, S. Hsu, D. Sawdai,
P. Chin and T. Block, “InPbased NPNPNP HBT
common collector pushpull monolithic integrated amplifiers,” proc. 26^{th} Workshop on
Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE),
Chernogolovka, pp. 147148, May 2002.
[115] S. Hsu, D. Pavlidis, J. Moon, M. Micovic,
C. Nguyen, and D. Grider, “Low
noise AlGaN/GaN MODFETs with high breakdown and power characteristics,”23rd
IEEE GaAs IC Symposium, pp. 229232, Oct. 2001.
[116] S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, “Low noise, highspeed
InP/InGaAs HBTs,” 23rd IEEE GaAs IC Symposium, pp. 188191, Oct. 2001.
[117] S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic,
C. Nguyen, D. Grider, “High frequency
noise studies in AlGaN/GaN MODFETs,” proceeding of 25^{th} Workshop on Compound Semiconductor
Devices and Integrated Circuits in Europe (WOCSDICE),
Cagliari, pp.147148, May 2001.
[118] D. Cui, S. Hsu and
D. Pavlidis, “First InP/InGaAs
PNP HBT grown by metal organic chemical vapor deposition”, 13th IEEE
Int. Conf. Indium Phosphide and Related materials (IPRM’01), Nara,
Japan, pp. 224227, May 2001.
[119] E. Alekseev, S. Hsu,
D. Pavlidis, T. Tsuchiya and M. Kihara, “Broadband AlGaN/GaN HEMT MMIC
attenuators with high dynamic range,” Proceeding of 30^{th} European microwave conference, 2000.
[120] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis,
P. Chin and T. Block, “Low
DC power, high gainbandwidth product, coplanar Darlington feedback
amplifiers using InAlAs/InGaAs heterojunction bipolar transistors,” 22nd IEEE GaAs IC
Symposium, pp.259262, 2000.
[121] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T. Block, “High power performance
using InAlAs/InGaAs single HBTs,” 12th IEEE Indium Phosphide and
Related Materials (IPRM’00), Williamsburg, VA, May 1519, pp.
473476, 2000.
[122] D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S.
Hsu, “Hole
impact ionization coefficient in (100)oriented In_{0.53}Ga_{0.47}As,” 12th IEEE Indium Phosphide and Related
Materials (IPRM’00), Williamsburg, pp. 258261, May 2000.
[123] S. Hsu, P.N. Tan, D.
Pavlidis, E. Alekseev, N.X. Nguyen, C. Nguyen,
and D.E. Grider, “Frequency
dependent output resistance and transconductance in ALGaN/GaN MODFETs,” Proceeding of 1999 International
Semiconductor Device Research Symposium (ISDRS), Charlottesville, pp. 315317, Dec. 1999.
[124] S. Hsu, D. Sawdai, and D. Pavlidis, “Modeling of
highlynonlinear HBT characteristics using a distributed thermal subcircuit
derived from pulsed measurements,” 53rd ARFTG conference (MTT
Symposium) Digest, Anaheim, pp.139145, June 1999.
[125] S. Hsu, B. Bayraktaroglu and D. Pavlidis,
“Comparison of
conventional and thermallystable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,” Topical Workshop on Heterostructure
Microelectronics for Information Systems Applications, Kanagawa, Japan,
Aug. 30Sep. 2, pp. S36, 1998.
