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[1] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and
S. Hsu*, “A
43.4-dB gain 7.6-mW 197.5% bandwidth double noise-canceling cryogenic LNA using
gain peaking technique for multiple spin qubit readout,” IEEE Trans. Circuits and Systems II, Feb. 2025 (Early access).
[2] J.
Hsu, S. Hsu, T. Chang, C. Lien, T. Kuo, C. Yeh, J.
Lin, Y. Lee, C. Lin, I. Huang, “Investigating
the arc-shaped kink drain voltage of drain current with capacitance-voltage
measurement method in GaN HEMTs,” IEEE Trans. Device and Materials
Reliability, vol. 24, no. 4, pp. 544-548, Dec. 2024.
[3] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and
S. Hsu*, “A
0.01-to-2.6-GHz two-fold current reuse dual noise-canceling LNA achieving
6.8-K noise temperature for quantum applications,” IEEE Trans. Circuits and Systems II, vol. 71, no. 5, pp.
2504-2508, May 2024.
[4] M.
K. Chaubey, Y. Liu, Y. Chang, P. Wu, H. Tsai, and
S. Hsu*, “Ultracompact
inductorless noise-canceling LNAs in 40-nm CMOS achieving 2.2-K noise
temperature for qubit readout,” IEEE
Trans. Microwave Theory Techn., vol. 72, no. 4, pp. 2168-2178, Apr.2024.
[5] J. Wang, Y. Huang, Y. Chang, Y. Liu, D.
Chang, and S. Hsu*, ”A K-band MMIC
cross-coupled oscillator with high output power in 0.25-mm GaN HEMT,” IEEE Microwave and Wireless Technology Lett., vol. 33, no. 8,
pp. 1211-1214, Aug. 2023.
[6] S. Hong and S. Hsu*, “An inductorless
20-Gbaud overshoot suppression modulator driver using interleave frequency
variant feedback in 90nm CMOS,” IEEE
Trans. Microwave Theory Techn.,
vol. 71, no. 3, pp. 1044-1054, March 2023.
[7] C. Lin, S. Hong, and S. Hsu*, “A
40-Gb/s modulator driver using cascade swing compensation in 90 nm CMOS,“ IEEE
Microwave and
Wireless Components Lett., vol. 32, no. 9, pp. 1103-1106, Sept. 2022.
[8] S. D. Joseph, Y. Huang*, S. Hsu*, A. Alieldin, and C. Song, “ Second harmonic exploitation for
high-efficiency wireless power transfer using duplexing rectenna,” IEEE Trans. Microwave Theory Techn.,
vol. 69, no. 1, pp. 482-494, Jan.
2021.
[9] S. D. Joseph, Yi Huang*, and S. H. Hsu*, “Transmission
lines-based impedance matching technique for broadband rectifier,” IEEE Access, vol. 8, pp. 4665-4672,
Dec. 2020.
[10] S. D. Joseph, S. Hsu*, A. Alieldin, C. Song, Y. Liu, and Y. Huang*, “High-power
wire bonded GaN rectifier for wireless power transmission,” IEEE Access, vol. 9, pp.
82035-82041, Apr. 2020.
[11] Y. Liu, C. Li, W. Hsu, C. Chuang, J. Liu,
and S. Hsu, “High-frequency
AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates,” Jpn. Journal of Applied Physics, 59,
SGGD11, Feb. 2020.
[12] H. Wang, C-H Li, Y. Liu, S. D. Joseph, Y.
Huang, and S. Hsu, “Low
turn-on voltage and high breakdown GaN Schottky barrier diodes for RF
energy harvesting applications,” Jpn. Journal of Applied Physics, 59, SGGD12, Feb. 2020.
[13] S. Li, S. Hsu*, K. Chen, C. Lin, S. Chen,
J. Zhang, and P. Tzeng, “Fully
symmetric 3-D transformers with through-silicon via IPD technology for RF
applications,” IEEE Trans. Compon. Packag. manuf.
Technology, vol. 9, no. 11, Nov. 2019.
[14] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “A low-loss fully
integrated CMOS active probe for gigahertz conducted EMI test,” IEEE Trans. Microwave Theory Techn.,
vol. 67, no. 4, pp. 1652-1660, Apr. 2019.
[15] S. Li, S. Hsu*, J. Zhang, and K. Huang, “Design of
a compact GaN MMIC Doherty power amplifier and system level analysis With X-Parameters for 5G communications,” IEEE Trans. Microwave Theory Techn.,
vol. 66, no. 12, pp. 5676-5684, Dec. 2018.
[16] J. Liu and S. Hsu*, “A miniature
300-MHz resonant DC-DC converter with GaN and CMOS integrated in IPD
technology,” IEEE Trans. Power
Electronics, vol. 33, no. 11, pp. 9656-9668, Nov. 2018.
[17] P. Wang, G. Su,
Y. Chang, D. Chang, and S. Hsu*, “A
transformer-based current-reuse QVCO with an FoM up to -200.5 dBc/Hz,” IEEE Trans. Circuits and Systems II, vol.
65, no. 6, pp. 749-753, June 2018.
[18] Y. Li, P. Chiu, K. Li, D. Thomson, G.
Reed, and S. Hsu*, “A 40-Gb/s
4-Vpp differential modulator driver in 90 nm CMOS,” IEEE Microwave and
Wireless Components Lett., vol. 28, no. 1,
pp. 73-75, Jan. 2018.
[19] Y. Lin and S. Hsu*, “A Sierpinski
space-filling clock tree using multiply-by-3 fractal-coupled ring
oscillators,” IEEE J. Solid-State
Circuits, vol. 52, no.
11, pp. 2947-2962, Nov. 2017.
[20] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “Wideband
conducted electromagnetic emission measurements using IPD chip probes,”
IEEE Trans. Microwave Theory Techn.,
vol. 64, no. 11, pp. 4063-4070, Nov. 2016.
[21] C. Tsou, H. Kang, Y. Lian, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for RF applications,”
IEEE Trans. Electron Devices, vol.
63, no. 11, pp. 4218-4225, Nov. 2016.
[22] C. Tsou, K. Wei, Y. Lian, and S. Hsu*, “2.07-kV AlGaN/GaN
Schottky barrier diodes on silicon with high Baliga’s figure-of-merit,” IEEE Electron Device
Letters., vol. 37, no. 1, pp.
70-73, Jan. 2016.
[23] C.
Lee, H. Hsieh, and S. Hsu*, “A low-power
miniature 20-Gb/s passive/active hybrid equalizer in 90nm CMOS,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 10, pp. 669-671, Oct. 2015.
[24] C.
Tsou, C. Lin, Y. Lian, and S. Hsu*, “101-GHz InAlN/GaN
HEMTs on silicon with high Johnson’s figure-of-merit,” IEEE Trans. Electron Devices, vol.
62, no. 8, pp. 2675-2678, Aug. 2015.
[25] K.
Tan, T. Chu, and S. Hsu*, “A
76.2-89.1 GHz phase-locked loop with 15.6% tuning range in 90nm CMOS for
W-band applications,” IEEE Microwave and
Wireless Components Lett., vol. 25, no.
8, pp. 538-540, Aug. 2015.
[26] K.
Tan, A. Lo, T. Chu, and S. Hsu*, “A K-band
reconfigurable pulse-compression automotive radar transmitter in 90 nm
CMOS,” IEEE Trans. Microw. Theory Techn.,
vol. 63, no. 4, pp. 1380-1387, Apr. 2015.
[27] Y.
Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “Drain
E-field manipulation in AlGaN/GaN HEMTs by Schottky extension technology,”
IEEE Trans. Electron Devices,
vol. 62, no. 2, pp. 519-524, Feb. 2015.
[28] F.
Chen, M. Kao, Y. Hsu, J. Wu, C. Chiu, S. Hsu, and M. F. Chang, “A 10-Gb/s low jitter single-loop
clock and data recovery circuit with rotational phase frequency detector,”
IEEE Trans. Circuits and Systems I
(TCAS I), vol. 61, no. 11, Nov. 2014.
[29] G.
Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y.
Hu, D. J. Thomson, K. Li, P. Wilson, S. Chen, and S. Hsu, “Recent
breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics,
vol. 3, issue 4-5, pp. 229-245, Aug. 2014.
[30] C.
Yeh, Y. Lain, Y. Chiu, C. Liao, D. Moyano, S.
Hsu, and P. Chiu, “Gigahertz
flexible graphene transistors for microwave integrated circuits,” ACS
nano, 2014, 8(8), pp. 7663-7670, July 2014 (2014 impact factor: 12.033)
[31] S.
Huang, J. Wang, C. Lan, S. Hsu*, S. Li, P. Tseng, C. Lin, and S. Sheu, “An
ultra compact millimeter-wave VCO in 3D IC technology,” IEEE Microwave
and Wireless Components Lett, vol. 24, no.
4, Arp. 2014.
[32] C.
Hsiao, T. Su, and S. Hsu*, “CMOS
distributed amplifiers using gate-drain transformer feedback technique,”
IEEE Trans. Microwave Theory Tech.,
vol. 61, no. 8, pp. 2901-2910, Aug. 2013.
[33] Y.
Lian, Y. Lin, J. Yang, C. Cheng, and S. Hsu*, “AlGaN/GaN Schottky
barrier diodes on silicon substrates with selective Si diffusion for low
onset voltage and high reverse blocking,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 981-983, Aug.
2013.
[34] C.
Hsieh, J. Hwang, T. Chang, J. Li, S. Chen, L. Mao, L. Tsai, Y. Chueh, P. Lyu, and S. Hsu, “Enhanced
mobility of organic thin film transistors by water absorption of collagen
hydrolysate gate dielectric,”
Applied Physics Lett. 103, 023303 (2013)
[35] Y.
Hsu, Y. Lin, C. Chiu, J. Wu, S. Hsu, F. Chen, M. Kao, W. Lai, and Y. Hsu, “A
low propagation delay load balanced 4 x 4 switch fabric IC in 0.13 mm CMOS technology,” IEEE Trans. VLSI, vol. 21, no. 8,
pp. 1481-1495, Aug. 2013.
[36] Y.
Lin, Y. Lian, J. Yang, H. Lu, Y. Huang, C. Cheng, and S. Hsu*, “Contact
engineering of GaN-on-silicon power devices for breakdown voltage
enhancement,” Semiconductor
Science and Technology, vol. 28, 074018, July 2013. (invited)
[37] L.
Mao, J. Hwang, T. Chang, C. Hsieh, L. Tsai, Y. Chueh,
S. Hsu, P. Lyu, and T. Liu, “Pentacene
organic thin-film transistors with solution-based gelatin dielectric,” Organic
Electronics, vol. 14, issue 4, pp. 1170-1176, Apr. 2013.
[38] M.
Tsai, S. Huang, and S. Hsu, “ESD
protection design for V-band low-noise amplifier using RF junction
varactors,” Jpn. Journal of Applied Physics,
04CE09, 1-6, March 2013.
[39] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “Design of
60-GHz low-noise amplifiers with low NF and robust ESD protection in 65-nm
CMOS,” IEEE Trans. Microwave
Theory Tech., vol. 61, no. 1, pp. 553-561, Jan. 2013.
[40] W.
Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel low gate-count pipeline
topology with multiplexer-flip-flops for serial link,” IEEE Trans. Circuits and Systems I (TCAS
I), vol. 59, no. 11, pp. 2600-2610, Nov. 2012.
[41] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “A 17.5-26
GHz low-noise amplifier with over 8-KV ESD protection in 65-nm CMOS,” IEEE Microwave
and Wireless Component Lett. vol. 22, no. 9, pp. 483-485,
Sep. 2012.
[42] Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for high breakdown
voltage and low leakage current,” IEEE
Electron Device Letters, vol. 33, no. 7, pp. 973-975, July 2012.
[43] P. Chang, S. Su, S.
Hsu*, W. Cho, and J. Jin, “An
ultra-low-power transformer-Feedback 60 GHz low-noise amplifier in 90 nm
CMOS,” IEEE
Microwave and Wireless Component Lett. vol. 22,
no. 4, pp. 197-199, Apr.
2012.
[44] M.
Tsai and S. Hsu*, “A
V-Band Low-Noise Amplifier Co-Designed with ESD Network in 65-nm RF CMOS,”
Microwave Optical Technology Letters,
vol. 54, no. 3, pp. 820-822,
March 2012.
[45] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, “ESD-protected
K-band low-noise amplifiers using RF junction varactors in 65-nm CMOS,”
IEEE Trans. Microwave Theory Tech., vol. 59, no. 12, pp. 3455-3462, Dec.
2011.
[46] C. Hsiao, S. Hsu*, and D. Chang, “A compact V-band
bandpass filter in IPD technology,” IEEE
Microwave and Wireless Component Lett. vol. 21, no. 10, pp. 531-533,
Oct. 2011.
[47] M. Tsai and S. Hsu* “A
24-GHz low-noise amplifier using RF junction varactors for noise
optimization and CDM ESD protection in 90-nm
CMOS,” IEEE Microwave and Wireless
Component Lett., vol. 21, no. 7, pp. 374-376, July 2011.
[48] W. Cho and S. Hsu*, “An
ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology,”
IEEE Microwave and Wireless Component Lett., vol.
20, no. 12, pp. 681-683, Dec. 2010.
[49] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou , "A multi-ESD-path
low-noise amplifier with a 4.3-A TLP current level in 65-nm CMOS,"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4004-4011, Dec.
2010.
[50] P. Chang and S. Hsu*, "A
compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-μm
CMOS," IEEE Trans.
Microwave Theory Tech., vol. 58, no. 10, pp. 2575-2581, Oct. 2010.
[51]
W.
Chang, K. Tan, and S. Hsu*, "A 56.5-72.2 GHz
transformer-injection Miller frequency divider in 0.13 μm CMOS," IEEE Microwave and Wireless Component Letters, vol. 20, no. 7, pp. 393-395, July,
2010.
[52]
T.
Lin, P. Chang, H. chiu, M. Hong, J. Kwo, Y. Lin, and S. Hsu, "DC and RF
characteristics of self-aligned inversion-channel In0.53Ga0.47As
MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3)
as gate dielectrics," J.
Vacuum Science and Technology B, 28(3),
May/Jun, C3H14 (2010).
[53] Y. Chang, W. Chang, Y. H. Chang, J. Kwo, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, "Drain
current enhancement and negligible current collapse in GaN MOSFETs with
atomic-layer-deposited HfO2 as a gate dielectric," J. Microelectronic Engineering, 87(2010) 2042-2045.
[54]
Y.
Lin, Y. Lian, and S. Hsu*, "AlGaN/GaN
HEMTs with low leakage current and high on/off current ratio," IEEE Electron Device Letters, vol. 31, no. 2, pp. 102-104, Feb.
2010.
[55]
Y.
Lin, J. Wu, C. Chan, S. Hsu*, C. Huang, and T. Lee, “Square-gate
AlGaN/GaN HEMTs with improved trap-related characteristics,” IEEE Trans. Electron Devices,
vol 56, no. 12, pp. 3207-3211, Dec. 2009.
[56]
M.
Tsai, S. Hsu*, F. Hsueh, C. Jou, S. Chen, and M.
Song, “A wideband low
noise amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS,” IEEE Microwave and Wireless
Component Letters, vol. 19, no. 11, pp. 734-736, Nov. 2009.
[57]
J. Jin and S. Hsu*, “A
K-band low-noise amplifier in 0.18-μm CMOS technology for sub-1-V
operation,” Microwave Optical
Technology Letters, vol. 51, no. 9, pp. 2202-2204, 2009.
[58]
M.
Kao, J. Wu, C Lin, F. Chen, C. Chiu, and S. Hsu, “A 10-Gb/s CML I/O circuit for
backplane interconnection in 0.18-μm CMOS technology,” IEEE
Trans. VLSI Systems, vol. 17, no. 5, pp. 688-696, May 2009.
[59]
Y. Wu,
S. Hsu*, K. Tan, and Y. Su, "Substrate noise
coupling reduction in LC voltage-controlled oscillators," IEEE
Electron Device Letters, vol. 30, no. 4, pp. 383-385, Apr. 2009.
[60]
Y.
Wei, S. Hsu*, and J. Jin, "A low-power low-noise
amplifier for K-band applications," IEEE Microwave and Wireless
Component Lett., vol. 19, no. 2,
pp. 116-118, Feb. 2009.
[61]
J.
Jin and S. Hsu*, "A 75-dBΩ 10-Gb/s
transimpedance amplifier in 0.18-μm CMOS technology," IEEE Photon.
Tech. Lett., vol. 20, no. 24, pp. 2177-2179, Dec. 2008.
[62]
J. Jin and S. Hsu*, "A
miniaturized 70-GHz broadband amplifier in 0.13-µm CMOS technology," IEEE
Trans. Microwave Theory Tech., vol. 56, no. 12, pp. 3086-3092, Dec.
2008.
[63]
C.
Chan, S. Chen, M. Tsai, and S. Hsu*, "Wiring effect optimization
in 65-nm low-power NMOS," IEEE Electron Device Letters, vol. 29, no. 11, pp. 1245-1248, Nov. 2008.
[64]
C.
Chan, Y. Huang, J. Chen, S. Hsu*, and Y. Juang, "STI-to-gate
distance effects on flicker noise characteristics in 0.13-µm CMOS," J. Solid-State Electronics, vol. 52, pp. 1182-1187, 2008.
[65]
J. Jin and S. Hsu*, “A 40-Gb/s transimpedance amplifier
in 0.18-µm CMOS technology,” IEEE J. Solid-State Circuits, vol.
43, no. 6, pp.
1449-1457, June, 2008.
[66]
J.
Jin, S. Hsu*, T. Yeh, M. Yang, and S. Liu, “Fully analytical
modeling of Cu interconnects up to 110 GHz,” Jpn.
Journal of Appl. Physics, vol. 47, no. 4, pp. 2473-2476, Apr. 2008.
[67]
J.
Jin and S. Hsu*, “A 1-V, 45-GHz balanced amplifier
with 21.5-dB gain using 0.18-μm CMOS technology,” IEEE Trans.
Microwave Theory
Tech., vol. 56, no. 3, pp. 599-603, March 2008.
[68]
J.
Jin and S. Hsu*, “A 0.18-μm CMOS balanced
amplifier for 24-GHz applications,” IEEE J. Solid-State Circuits,
vol. 43, no. 2, pp. 440-445, Feb. 2008.
[69]
C.
Chan, Y. Lin, J. Jin, S. Hsu*, Y. Huang, and Y. Juang, “Impact
of STI effect on flicker noise in 0.13-µm RF N-MOSFETs,” IEEE Trans.
Electron Devices, Vol. 54, No.
12, pp. 3383-3392, Dec., 2007.
[70]
H.
Lin, S. Hsu*, C. Chan, and Y. Lin, “A wide locking-range
frequency divider for LMDS applications,” IEEE Trans. Circuits
and Systems II, Vol. 54, No. 9, pp. 750-754, Sep. 2007.
[71]
Y.
Lin, S. Koa, C. Chan, S. Hsu*, H. Lee, and S. Gwo,
"High current density
InN/AlN heterojunction field-effect transistor with a SiNx gate
dielectric layer," Applied Physics Letters 90, 142111, 2007.
[72]
C.
Chan, T. Lee, S. Hsu*, L. Chen, and Y. Lin, “Impacts of gate
recess and passivation on AlGaN/GaN HEMTs,” Jpn.
Journal of Appl. Physics, Vol. 46, No. 2,
pp. 478-484, Feb. 2007.
[73]
T.
Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M.
Hong, “Interfacial
trap characteristics in depletion mode GaAs MOSFET’s,” Journal of Crystal Growth,
Vol. 301-302, April 2007, pp. 1009-1012.
[74]
Y.
Lin, S. Hsu*, J. Jin, and C. Chan, “A
3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused
technique,” IEEE Microwave and Wireless Component
Letters, vol. 17, No. 3, Mar. 2007.
[75]
J.
Jin, S. Hsu*, M. T. Yang, and S. Liu, “Low-loss
differential semi-coaxial interconnects in CMOS process,” IEEE
Trans. Microwave Theory Tech., vol. 54, no. 12, pp. 4333-4340,
Dec. 2006.
[76]
S.
Hsu*, H. Zhu, “W-band
multiple-ring resonator by standard 0.18-um CMOS technology,” IEEE
Microwave and Wireless
Component Lett., pp. 832-834, Dec. 2005.
[77]
J.
A. Yeh, C. A. Chang, C. -C. Cheng, J. -Y. Huang, and S. Hsu, “Microwave
characteristics of liquid crystal tunable capacitors,” IEEE Electron Device Lett., vol. 26, pp.
451-453, July 2005.
[78]
S. Hsu
and D. Pavlidis, “A
comparison of low-frequency noise characteristics and noise origins in
InP-based NPN and PNP heterojunciton bipolar transistors,” IEEE Trans. Electron Devices, vol.
50, no. 9, pp. 1974-1982, Sep. 2003.
[79]
S.
Hsu, D. Pavlidis, and D. Sawdai,
“Low-frequency
noise characteristics of PNP InAlAs/InGaAs HBTs,” IEEE Electron Device Letters, vol.
23, no. 12, pp. 688-690, Dec. 2002.
[80]
D.
Cui, D. Pavlidis, S. Hsu, and A. Eisenbach, “Comparison
of DC, high-frequency performance of zinc-doped and carbon-doped InP/InGaAs
HBTs grown by metalorganic chemical vapor deposition,” IEEE Trans.
Electron Devices, vol. 49, no. 5, pp. 725-732, May, 2002.
[81]
D.
Cui, D. Pavlidis, S. Hsu, D. Sawdai,
P. Chin, and T. Block, “First
demonstration of monolithic InP-based HBT amplifier with PNP active load,”
IEEE Electron Device Letters, vol. 23, no. 3, pp. 114-117, Mar.
2002.
[82]
D.
Cui, S. Hsu, and D. Pavlidis, “DC and high frequency
characterization of Metalorganic Chemical Vapor Deposition (MOCVD) grown
InP/InGaAs PNP heterojunction bipolar transistor,” Jpn.
J. of Appl. Phys. Vol. 41, no. 2B, pp. 1143-1149, Feb, 2002.
[83]
D.
Cui, S. Hsu and D. Pavlidis, “Ka-band
oscillators using InP-based HBTs,” J.
of Solid-State Electronics, vol. 46, no. 2, pp. 249-253, Feb. 2002.
[84]
D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S.
Hsu “Measurements
of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp
HBTs,” IEEE Electron Device Letters, vol. 22, no. 5, pp.
197-199, May. 2001.
[85]
D. Sawdai, K. Yang, S. Hsu, D. Pavlidis,
and G. Haddad, “Power
performance of InP-Based single- and double-heterojunction bipolar transistors,” IEEE Trans.
Microwave Theory Tech., vol. 47, pp. 1449-1456, Aug. 1999.
[86]
S.
Hsu, B. Bayraktaroglu, and D. Pavlidis,
“Comparison of
conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for microwave power
applications,” Journal of Solid-State Electronics, vol. 43, no.
8, pp. 1429-1436, 1999.
|
|
[1]
Y. Shang, K. Chuang, Y. Chang,
H. Lin, D. Chang, and S. Hsu, “A continuous-mode class-F-1
X-band GaN MMIC power amplifier with a 29.7 % fractional bandwidth,” to be
presented in IEEE Int. Microwave Symposium (IMS), San Francisco,
June 2025.
[2]
S. Li, J. Zhang, and S. Hsu, “A sub-6 GHz ultra-compact 69.8 %
drain efficiency harmonic control Doherty power amplifier in GaN technology,” to be presented in in IEEE Int. Microwave
Symposium (IMS), San Francisco, June 2025.
[3]
H. Wang, C. Hwang, P. Huang, Y.
Liu, S. Hsu, and R. Wong, “Enhancing continuous switching stability of Ga₂O₃ SBDs
through epitaxial surface condition and edge termination optimizations,” to
be presented in Intl. Symp. Power
Semiconductor Devices and ICs (ISPSD), Kumamoto, June 2025.
[4]
H. Wang, P. Huang, W. Hsu, S.
Hsu, and R. Wong, “Dynamic on-resistance degradation in E-mode GaN HEMTs under
over-voltage hard switching stress: insight of physical space and energy levels,”
be presented in Intl. Symp. Power
Semiconductor Devices and ICs (ISPSD), Kumamoto, June 2025.
[5]
M. Chaubey, Y. Liu, P. Wu, H. Tsai,
and S. Hsu, “Cryogenic DC and microwave characterization and modeling of
40-nm CMOS for quantum computing applications,” IEEE Asia-Pacific Microwave Conference (APMC), Bali,
Nov. 2024.
[6]
H. Lin, Y. Chang, H. Wu, C. Chang, C. Lin, Y. Liu, D. Chang,
and Shawn S. H. Hsu "Miniaturized low-pass filter using IPD technology
for cryogenic quantum applications," IEEE Intl. Conf. Quantum
Computing and Engineering (QCE), Montréal, Sep. 2024.
[7]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 46.7-dB gain 9.3-K noise
temperature 5.8-mW two-fold current reuse dual noise-canceling LNA in 28-nm
CMOS for qubit readout,” IEEE RFIC Symposium, Washington DC,
June 2024.
[8]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 0.01-to-2.6-GHz two-fold current
reuse noise-canceling LNA for quantum applications,” IEEE Int'l Symp. Circuits & Systems
(ISCAS), Singapore, May 2024.
[9]
Y. Chang, J. Wang, Y. Chang, C.
Chen, D. Chang, Y. Huang, and S. Hsu, “A Ka-band high power and low phase
noise GaN MMIC oscillator with a compact open-loop folded resonator filter,” IEEE Int. Microwave Symposium (IMS), Washington DC, June 2024.
[10] M. Chaubey, Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A gm-boosting
inductorless noise-canceling low noise amplifier in 40-nm CMOS for quantum
applications,” IEEE Int.
Microwave Symposium (IMS), Washington DC, June 2024.
[11] P. Huang, X. Chen, H. Wang, S. Hsu, and R. Wong,
“Comprehensive study of Human-Body-Model electrostatic discharge on p-GaN
gate power HEMT with AlGaN barrier spacers,” Intl.
Symp. Power Semiconductor Devices and ICs (ISPSD),
Bremen, June 2024.
[12] H. Wang, C. Lai, P. Huang, Y. Lin, S. Hsu, and R. Wong,
“Comprehensive study on trapping-induced dynamics in β-Ga2O3 Schottky
barrier diodes under continuous switching stress,” Intl. Symp. Power Semiconductor Devices and ICs (ISPSD),
Bremen, June 2024.
[13] C. Chen, J. Wang, S. Hsu, Y. Chang, C. Hsieh, D. Chang, and Y.
Huang, “Ultra-low noise voltage supply using CMC filter for GaN oscillator
phase noise measurements,” IEEE
Asia-Pacific Microwave Conference (APMC),
Taipei, Dec. 2023.
[14] M. Chaubey, Y. Liu, P. Wu, H. Tsai, and S. Hsu, “A
miniature 10MHz‒3GHz sub 1-dB NF cryogenic
inductorless noise-canceling low-noise amplifier for qubit readout,” IEEE Int. Microwave Symposium (IMS),
San Diego, June 2023.
[15] J. Wang, Y. Chang,
Y. Liu, S. Li, D. Chang, Y. Huang, and S. Hsu, “A
110-GHz push-push balanced Colpitts oscillator Using 0.15-µm GaN HEMT
technology,” IEEE Int. Microwave
Symposium (IMS), San Diego, June 2023.
[16] Y. Chang, T. Lin, J.
Wang, S. Lin, C. Hsieh, Yi Huang, S. Hsu, and D. Chang, “A
miniature W-band substrate-integrated waveguide cavity bandpass filter
using GaAs-based IPD technology,”” IEEE
Int. Microwave Symposium (IMS), San Diego, June 2023.
[17] J. Wang, Y. Chang,
D. Chang, S. Hsu, and Y. Huang, “W-band cavity-backed folded-slot antenna
using GaAs integrated passive device technology,” Intl. Workshop on Antenna Technology (iWAT),
Aalborg, Denmark, May, 2023.
[18] S. Hsu, S. Li, R.
Joshi, M. Liu, S. D. Joseph, J. Wang, Y. Liu, Y. Chang, and Y. Huang, “GaN
HEMTs for High-frequency power applications,” Asia-Pacific Workshop on Widegap Semiconductors Taoyuan, Nov.
2022. (invited)
[19] Y. Chang, P. Wang,
T. Lin, C. Hsieh, D. Chang, and S. Hsu, “Chip-level
high-frequency EMC strategies and measurement techniques,” IEEE Int. Symp.
Radio-Frequency Integration Technology, Busan, Aug. 2022. (invited)
[20] Y. Chang, J. Wang, T. Lin, C. Hsieh, Y. Huang, S. Hsu, and D.
Chang, “3D
chip-level broadband measurement technique for radiated EM emission,” IEEE Int. Microwave Symposium (IMS), Denver, June 2022.
[21] S. D. Joseph, S. Hsu, and Y. Huang, “Rectennas for wireless
energy harvesting and power transfer,” IEEE Int. Symp. Radio-Frequency Integration Technology, Taipei, Aug. 2021.
(invited)
[22] M. Wu, S. Hong, H. Su, and S. Hsu, “A
64-Gbaud transimpedance amplifier in 130nm SiGe technology with effective
broadband techniques,” IEEE Int.
Microwave Symposium (IMS), Atlanta, June 2021.
[23] Y. Chang, T. Lin, C.
Hsieh, P. Wang, S. Hsu, and D. Chang, “A
low EM susceptibility VCO with four-leaf-clover-shaped inductor verified
via chip-level 3D near-field measurement technique,” t IEEE Int. Microwave Symposium (IMS),
Atlanta, June 2021.
[24] T. Lee, J. Zhang, S. Hong, C. Hsu, S. Li, S. Chen, S. Sheu, C. Wu, and S. Hsu, “A
low power CMOS driver integrated with Mach-Zehnder modulator for PAM4
optical transmissions,” European Microwave
Conf. (EuMC), Jan. 2021.
[25] R. Joshi, M. Liu,
and S. Hsu, “A
high efficiency compact class F GaN MMIC power amplifier for 5G
applications,” European Microwave
Conf. (EuMC), Jan. 2021 (Best poster pitch
prize).
[26] Y. Chang, T. Lin, C.
Hsieh, Y. Chang, M. Yen, S. Hsu, and D. Chang, “Technique of measuring injection
locking of VCO,” IEEE Asia-Pacific Symp. on Electromagn. Compat.
(APEMC), Sydney, May 2020.
[27] S. D. Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin, and C.
Song, “A novel duplexing antenna for feedback wireless power transfer,” 14th European Conf. Antennas and
Propagation (EuCAP 2020), Copenhagen, Mar.
2020.
[28] Y. Chang, T. Lin, C.
Hsieh, D. Chang, S. Hsu, M. Yen, and J. Dong, “Discrete 1Ω
probe by using flip-chip IPD resistor and amplifier for inspecting EMI of a
packaged IC,” IEEE CPMT Symp. pp. 163-164, Japan (ICSJ), Nov. 2019.
[29] S. D Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin,
and C. Li, “A novel transmission line technique to realize broadband
rectenna for WEH and WPT applications,” 2019 Asian Wireless Power Transfer
Workshop (AWPT), Xian, Oct. 2019.
[30] C. Li, H. Wang, Y. Liu, S. D. Joseph, Y.
Huang, and S. Hsu, “Low turn-on voltage and high breakdown GaN Schottky
barrier diodes for RF energy harvesting applications,” Intl. Conf. on Solid State Devices and Materials (SSDM),
Nagoya, Sept. 2019.
[31] C. Li, Y. Liu, W.
Hsu, C. Chuang, J. Liu, and S. Hsu, “High frequency AlGaN/GaN
T-gate HEMTs on extremely low resistivity silicon substrates,” Intl. Conf. on Solid State Devices and
Materials (SSDM), Nagoya, Sept. 2019.
[32] T. Chen, H. Su, T. Lee, and S. Hsu, “A
64-Gb/s 4.2-Vpp modulator driver using stacked-FET distributed amplifier
topology in 65-nm CMOS,” IEEE
Int. Microwave Symposium (IMS), Boston, June 2019.
[33] S. D Joseph, Y.
Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li
" A novel miniaturized broadband Yagi-Uda
antenna with enhanced gain for wireless energy harvesting
applications," 2019 13th European Conference on Antennas and
Propagation (EuCAP),
Krakow, May, 2019.
[34] Y. Chang, P. Wang,
H. Hsiao, T. Lin, S. Hsu, M. Yen, M Lin, and D. Chang, "EMS
Characterization of LDO with On-Chip Decaps by
Using Direct RF Power Injection Method," IEEE Intl. Workshop on Electromagnetics (iWEM),
Nagoya, Aug., 2018.
[35] Y. Chang, T. Lin, P.
Wang, S. Hsu, M. Yen, C. Hung, and D. Chang, "Implementation of
Certified 150-Ω Voltage Probe for IEC 61967-4 Conducted Electromagnetic
Emission Measurement," Intl.
Conf. Precision Electromagnetic Measurements (CPEM), Pairs, July, 2018.
[36] S. Li, S. Hsu, J.
Zhang, and K. Huang, “A sub-6 GHz compact
GaN MMIC Doherty PA with a 49.5% 6 dB back-off PAE for 5G communications,”
IEEE Int. Microwave Symposium (IMS),
Philadelphia,, June 2018, pp. 805-807.
[37] S. Joseph, Y. Huang,
S. Hsu, M. Stanley, and C. Song, “A
novel dual-polarized millimeter-wave antenna array with harmonic rejection
for wireless power transmission,” 12th
European Conf. Antennas and Propagation (EuCAP
2018), London, Apr. 2018.
[38] Y. Chang, Y. Ou, C. Hsieh, P. Wang, S. Hsu, M. Yen, Y. Chang, C.
Chen, and D. Chang, “Measurement technique for high precision and noise
sensitive ICs using multiple output-bias board with low baseband noise,” in
IEEE International Symposium on Electromagn. Compat. (EMC), pp. 61-64, Washington
DC, Aug. 2017.
[39] P. Wang, G. Su, Y. Chang, D. Chang,
and S. Hsu, “A current-reuse quadrature phase oscillator with frequency
pulling suppression technique,” IEEE
Int. Microwave Symposium, Honolulu, June 2017.
[40] Y. Chang, P. Wang, S.
Hsu, M. Yen, Y. Chang, J. Dong, T. Lin, and D. Chang, “Implementation
of chip-level EMC strategies in 0.18 μm CMOS technology,” IEEE Asia-Pacific Symp.
on Electromagn. Compat. (APEMC), pp. 390-392,
Seoul, June 2017. (Best poster paper award)
[41] Y. Chang, T. Lin, P. Wang, S. Hsu, M. Yen, Y. Chang, M. Lin,
and D. Chang, “The design of
current probe in the IEC conducted emission measurement above 1 GHz,” Int. Symp. on
Antennas and Propagation (ISAP), Okinawa, Oct. 2016.
[42] S. Hsu, Y. Li, C. Liao, P. Wang, Y. Liu, P. Chiu, S. Chen, K.
Li, D. Thomson, and G. T. Reed, “Integration of high speed and low power
CMOS front-end circuits with silicon photonic devices,” Int. Conf. on Solid State Devices and Materials, Sep. 2016. (invited)
[43] S. Chen, P. Chiu, Y.
Li, S. Hsu, K. Li, D. J. Thomson, and G. Reed, “High speed and
low power silicon-based receiver front-end for optical interconnect,” IEEE Intl. Conf. Group IV Photonics
(GFP), Aug. 2016.
[44] D. J. Thomson, C. G. Littlejohns, K. Li, M. Nedeljkovic,
A. Z. Khokhar, F. Y. Gardes, G. Z. Mashanovich, C. Lacava, P.
Petropoulos, D. J. Richardson, M. S. Rouifed, H. Qiu, T. G. Xin, T. Hu, Z. Zhang, H. Wang, S. Hsu, and
G. T. Reed, “Integrated silicon optical modulators,” Progress in Electromagnetics Research Symposium (PIERS), Aug. 2016. (invited)
[45] S. Hsu, C. Tsou, Y.
Lian, and Y. Lin, “GaN-on-silicon
devices and technologies for RF and microwave applications,” IEEE Intl. Symp.
Radio-Frequency Integration Technology, Aug. 2016. (invited)
[46] P. Wang, M. Chou, Y.
Chen, Y. Chang, D. Chang, and S. Hsu, “A Ku-band low-phase-noise
transformer coupled VCO for satellite communications,” IEEE Intl. Symp.
Radio-Frequency Integration Technology, Aug. 2016.
[47] Y. Chang, P. Wang, S. Hsu, T.
Lin, C. Hsieh, and D. Chang, “A V-band CPW Bandpass Filter
with Controllable Transmission Zeros in Integrated Passive Devices (IPD)
Technology,” IEEE Int. Microwave
Symposium (IMS), San Francisco, May 2016.
[48] Y. Chang, P. Wang,
S. Hsu, Y. Chang, C. Chen, and D. Chang, “Impact and improvement of
resistor process variation on RF passive circuit design in Integrated
Passive Devices (IPD) technology,” Intl.
Conf. on Solid State Devices and
Materials (SSDM), pp. 74-75, Sapporo, Sept. 2015.
[49] P. Wang, Y. Shen, M.
Chou, T. Wu, M. Chen, Y. Chang, D. Chang, and S. Hsu, “A BiCMOS
Monolithic Ka-band Down-Converter for satellite communication systems,”
IEEE Int. Microwave Symposium, San
Francisco, May 2015.
[50] Y. Chang, P. Wang, S. Hsu, M. Yen, Y. Chang, C. Chen, and D.
Chang, “Design
of the Multifunction IC-EMC Test Board with Off-Board Probes for Evaluating
a Microcontroller,” IEEE
Asia-Pacific Symp. on Electromagn.
Compat. (APEMC), pp. 223-226, Taipei, May 2015.
[51] S. Hsu, P. Wang, P. Su, M. Chou, Y. Chang, and D. Chang, “Design of Ku/Ka band
down-converter front-end for digital broadcast satellite receivers,” IEEE Int. Wireless Symposium, Mar.
2015. (invited)
[52] P. Wang, T. Wu, M.
Chou, M. Chen, Y. Chang, D. Chang, and S. Hsu, “Design of wideband
sub-harmonic receiver front-end using 0.18-um BiCMOS
technology,” IEEE Int. Wireless
Symposium, Mar. 2015.
[53] P. Wang, T. Wu, M.
Chen, Y. Shen, Y. Chang, D. Chang, and S. Hsu, “A
low phase noise class-C VCO using novel 8-shaped transformer,” IEEE Int'l Symp.
Circuits & Systems (ISCAS), May 2015.
[54] P. Wang, Y. Shen, M.
Chou, Y. Chang, T. Wu, D. Chang, and S. Hsu, “Design of fully integrated
receiver front-end for VSAT applications,” IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits
in RF Systems (SiRF), Jan., 2015.
[55] P. Wang, Y. Shen, M.
Chou, K. Chuang, Y. Chang, D. Chang, and S. Hsu, “Design of 24 GHz CMOS VCO
using Armstrong topology with asymmetric transformer,” IEEE Asia-Pacific Microwave Conference (APMC), 2014.
[56] P. Wang, Y. Chang, K. Chuang, D. Chang, and S. Hsu, “A low phase noise 24
GHz CMOS quadrature-VCO using PMOS-source-follower coupling technique,”
Proc. 44th European
Microwave Circuits Conf. (EuMC), Oct. 2014, pp. 572-575.
[57] J. Y.-C. Liu, C. Chan, and S. Hsu, “A
K-band power amplifier with adaptive bias in 90-nm CMOS,” Proc. 44th
European Microwave Circuits Conf.
(EuMC),
Oct. 2014, pp. 1376-1379.
[58] P. Wang, M. Chou, P. Su, Y. Chang, K. Chuang, and S. Hsu, “A fully integrated
Ku-band down-converter front-end for DBS receivers,” IEEE Int. Microwave Symposium, Tampa
Bay, June 2014.
[59] Y. Chang,
P. Wang,
S. Hsu,
Y. Chang,
C. Chen,
H. Cheng,
and D. Chang,
“Investigation
on realizing
1Ω current
probe
complied
with IEC 61967-4 direct coupling method,”
in Proc. International Symposium on
Electromagnetic Compatibility (EMC’14), pp. 573-576, Tokyo, Japan, May
2014. (Best paper award
finalist)
[60] M. Tsai and S. Hsu, “ESD protection design
for microwave/millimeter wave low-noise amplifiers,” IEEE Int. Wireless Symposium, Mar.
2014. (invited)
[61] Y. Chang, S. Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, ”The
direct
RF power
injection
method
up to 18 GHz for Investigating IC's Susceptibility,” in Proc. International Workshop on Electromagnetic
Compatibility of Integrated Circuits (EMCCompo),
pp. 167-170, Nara, Japan, Dec. 2013.
[62] G. Reed, D. Thomson,
F. Gardes, G. Mashanovich,
Y. Hu, K. Li, P. Wilson, L. Zimmermann, H. Porte, B. Goll,
H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S.
Hsu, J. Fedeli, K. Debnath, T. Krauss, and L.
O’Faolain, “Options for silicon based modulators,”
Frontiers in Optics 2013,
Orlando, October 2013. (invited)
[63] G. Reed, D. Thomson,
F. Gardes, G. Mashanovich,
Y. Hu, K. Li, P. W. Wilson, L. Zimmermann, H. Porte, B. Goll,
H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S.
Hsu, J. Fedeli, K. Debnath, T. Krauss, and L.
O’Faolain, “Silicon optical modulators for short reach interconnect,” Int. Conf. on Solid State Devices and
Materials (SSDM), Fukuoka, Sep. 2013. (invited)
[64] C. Tsou, Y. Lian, J. Hung, Y. Lin, and S. Hsu, “AlGaN/GaN HEMTs on silicon with hybrid source/drain for
source-drain scaling and frequency dispersion suppression,” 2013 Int. Conf. on Solid State Devices and Materials (SSDM). (late news)
[65] D. Thomson, F. Gardes, Y. Hu, G. Mashanovich,
G. Reed, L. Zimmermann, D. Knoll, S. Lischke, H.
Porte, B. Goll, H. Zimmermann, L. Ke, P. Wilson, S. Chen, S. Hsu, G. Duan, A. Le Liepvre, C. Jany, A. Accard, M. Lamponi, D. Make,
F. Lelarge, S. Messaoudene,
D. Bordel, J. Fedeli, S. Keyvaninia,
G. Roelkens, and D. Van Thourhout,
“Integration
of high performance silicon optical modulators,” IEEE Group IV Photonics, Seoul, Aug.
2013. (invited)
[66] Y. Chang, S. Hsu, H. Cheng, and D. Chang, “The practical
measurement setup of DPI method above 1 GHz for ICs,” in IEEE Proc. Asia-Pacific Symp. Electromagnetic Compatibility, Melbourne, May 2013. (Best
paper award)
[67] M. Tsai, H. Hsieh, C. Lin, L. Chu, S. Hsu, J. Jin, T. Yeh, C. Jou, F. Hsueh,
and M. Ker, “A 56-67
GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in
65-nm CMOS,” in Proc. IEEE Asia-Pacific Microwave Conference, pp.
747-749, Kaohsiung, Dec. 2012.
[68] M. Tsai, S. Huang, and S. Hsu, “ESD protection design for
V-band low-noise amplifier using RF junction varactors,” Int. Conf. on Solid State Devices and Materials (SSDM), Kyoto, Sep. 2012.
[69] K. Tan, C. Lai, P. Lu, C. Tu, G. Huang, J. Wu, S. Hsu, and T.
Chu, “A
79GHz UWB Pulse-Compression Vehicular Radar in 90nm CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.
[70] M. Tsai, S. Hsu, T.
Yeh, C. Jou, and F. Hsueh, “A V-band
low-noise
amplifier
with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF
CMOS,” IEEE Int. Microwave
Symposium,
Montreal, June 2012.
[71] Y. Chang, B. Wang,
S. Hsu, Y. Chang, C. Chen, Y. Juang, H. Cheng and
D. Chang, “The evaluation flow for EMC behavior of RF ICs,”
in Proc. IEEE Asia-Pacific Symp. on Electromagn. Compat , pp.
321-324, Singapore, May, 2012.
[72] S. Hsu, W. Cho, S.
Chen, and J. Jin, “CMOS Broadband Amplifiers for
Optical Communications and Optical Interconnects,” IEEE Int. Symp. Radio-Frequency
Integration Technology, Beijing, Dec. 2011. (invited)
[73] Y. Chang, D. Chang,
S. Hsu, J. Lee, S. Lin, and Y. Juang, “A matrix-computation based
methodology for extracting the S-Parameters of interconnects in advanced
packaging technologies,” in Proc. IEEE Asia-Pacific
Microwave Conference, pp. 1909-1912, Dec. 2011.
[74] S. Hsu and M. Tsai, “Low-noise amplifiers with robust ESD
protection for RF SOC,” Inter. SoC
Design Conference, Jeju, Nov. 2011. (invited)
[75] Y. Chang, S. Hsu, D.
Chang, J. Lee, S. Lin, and Y. Juang, “A
de-embedding method for extracting S-parameters of vertical interconnect in
advanced packing,” in Proc. IEEE
Int. Conf. Electrical
Performance of Electronic Packaging and Systems, pp.
219-222, San Jose, Oct. 2011.
[76] C. Yu, C. Huang, P.
Chu, K. Chen, S. Hsu, H. Chiu, and F. Zhao, “High-voltage AlGaN/GaN HEMTs on Si substrate with implant
isolation,” Int. Conf. on Solid State
Devices and Materials (SSDM), Nagoya, Sep. 2011.
[77] Y. Lin, Y. Lian, H.
Lu, Y. Huang, and S. Hsu, “AlGaN/GaN HEMTs on
silicon with hybrid schottky-ohmic drain for
improved DC characteristics,” Int.
Conf. on Solid State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[78] J. Wang, T. Huang,
Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku,
and C. Lin, “Testkey design of through silicon vias (TSVs) for accurate
de-embedding and RF model parameters extraction,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya,
Sep. 2011.
[79] M. Tasi, S. Hsu, T. Yeh, J. Jin,
H. Hsueh, C. Jou, and F. Hsueh, “A
24-GHz low-noise amplifier co-designed with ESD protection using junction
varactors in 65-nm RF CMOS,” IEEE
Int. Microwave Symposium, Baltimore, June 2011.
[80] F. Chen, M. Kao, Y.
Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu, “A 10 to 11.5 GHz rotational
phase and frequency detector for clock recovery circuit,” IEEE Int. Symp.
Circuits and Systems (ISCAS), Rio de Janeiro, May 2011 (Best Student
Paper Contest Finalist).
[81] M. Tasi, S. Hsu, F. Hsueh, C. Jou,
M. Song, J. Tseng, T. Chang, and D. Nag, “An analog front-end circuit with
dual-directional SCR ESD protection for UHF-band passive RFID Tag,” IEEE Int. Conf. RFID, Orlando, pp.
206-209, April 2011.
[82] C. Luo, Y. Wu, J.
Wang, and S. Hsu, “RF
modeling of through silicon vias (TSVs) in 3D IC,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM),
pp. 239-240, Tokyo, Sep. 2010.
[83] C. Hsiao, W. Wang,
T. Su, Y. Wu, and S. Hsu, “A gate-drain coupling
distributed amplifier in 90-nm CMOS technology,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp.
810-811, Tokyo, Sep. 2010.
[84] W. Tsai, C. Chiu, J.
Wu, S. Hsu, and Y. Hsu, “A novel
MUX-FF circuit for low power and high speed serial
link interfaces,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 4305-4308,
Paris, May 2010.
[85] Y. Hsu, M. Kao, F.
Chen, C. Chiu, J. Wu, and S. Hsu, “A 32Gbps low propagation
delay 4´4 switch IC for
feedback-based system in 0.13 µm CMOS technology,” IEEE Int. Symp. Circuits and Systems
(ISCAS), pp. 581-584, Paris, May 2010.
[86] M. Tasi, F. Hsueh, C. Jou, M.
Song, J. Tseng, S. Hsu, and S. Chen, “A
6.5 kV ESD-protected low noise amplifier in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig.,
pp.485-488, Anaheim, May 2010.
[87] S. Hsu and J. Jin, “CMOS
broadband amplifiers for optical communications,” Int. Symp.
Microwave and Optical Technology, New Delhi, India, pp. 1251-1254, Dec. 2009 (invited).
[88] Y. Lin, Y. Lian, S.
Hsu, and T. Lee, “Low leakage AlGaN/GaN HEMTs
with a high On/Off current ratio,” Int. Conf. on Solid State Devices and
Materials (SSDM), Miyagi, Oct. 2009.
[89] Y. Lian, Y. Lin, and
S. Hsu, “High breakdown GaN Schottky diodes with buried P-layer structure,”
Int. Conf. on Solid State Devices and
Materials (SSDM), Miyagi, Oct. 2009.
[90] M. Tasi, S. Hsu, and K. Tan, “A low noise amplifier
co-designed with ESD protection circuit in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 573-576, Boston, June 2009.
[91] S. Hsu, “Design
techniques for CMOS broadband amplifiers,” CMOS Emerging Technologies Workshops, Banff, Feb. 2009 (invited).
[92] Y. Lin, J. Wu, S.
Hsu, C. Chan, and Y. Lian, “GaN-based Schottky varactors for high-power RF
applications,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 506-507, Ibaraki, Sep. 2008.
[93] J. Jin and S. Hsu, “A 70-GHz
transformer-peaking broadband amplifier in 0.13-μm CMOS technology,” IEEE MTT-S Int. Microwave Symp. Dig., Atlanta, pp. 285-288, June 2008.
[94] J. Jin and S. Hsu, “Wideband CMOS
transimpedance amplifier design using transformer-peaking technique,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 492-493, Ibaraki, Sep. 2007.
[95] J. Jin, S. Hsu, T. Yeh, M. Yang, S. Liu, “Fully
analytical modeling of Cu interconnects up to 110 GHz,” Proc. Int. Conf. on
Solid State Devices and Materials(SSDM), pp. 908-909,
Ibaraki, Sep. 2007.
[96] Y. Lin, T. Lee, Y.
Wang, and S. Hsu, “Layout
optimization of AlGaN/GaN HEMTs for high-power applications,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 156-157, Ibaraki, Sep. 2007.
[97] S. Wang, Y. Wu, S.
Hsu, and C. Chan, “Substrate
coupling effect under various noise injection topologies in LC-voltage
controlled oscillator,” IEEE RFIC Symp., pp. 705-708, Hawaii, June 2007.
[98] C. Chan, Y. Lin, Y.
Huang, S. Hsu, and Y. Juang, “Edge-extended design
for improved flicker noise characteristics in 0.13-µm RF NMOS,” IEEE
MTT-S Int. Microwave Symp., pp. 441-444,
Hawaii, June 2007.
[99] C. Chiu, Y. Hsu, M.
Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F. Chen, H. Lin, J. Wu, S. Hsu, and
Y. Hsu, “A scalable load balanced Birkhoff-von
Neumann symmetric TDM switch IC for high-speed networking
applications,” IEEE
Int. Symp. Circuits and Systems, pp.
2754-2757, New Orleans, May 2007.
[100] L. Fan, S. Hsu, J. Jin, C. Hsieh, W. Lin, H. Hao, H. Cheng, K. Hsueh, and
C. Lee, “Miniaturization
of magnetic resonance microsystem components for 3D cell imaging,” IEEE Int. Solid-State Circuit Conf. (ISSCC), San Francisco, pp.
166-168, Feb. 2007.
[101] Y. Hsu, M. Kao, H.
Tzeng, C. Chiu, J. Wu, and S. Hsu, “A
20Gbps scalable load balanced Birkhoff-von Neumann symmetric TDM switch IC
with SERDES interfaces,” IEEE
proc. 12th Asia and South Pacific Design Automation Conf., pp. 23-26, Yokohama, Jan. 2007.
[102] C. Chan, P. Tsai, T.
Lee, S. Hsu, J. Kwo, and M. Hong, “Flicker
noise characteristics in GaAs MOSFETs,” MBE conf., Durham, Sep.
2006.
[103] C. Chan, J. Jin, Y. Lin, S. Hsu, and Y. Juang,
“STI effect on
flicker noise in 0.13-µm RF NMOS,” European Solid-state Device
Conference (ESSDERC), pp.101-104, Montreux,
Sep. 2006.
[104] J. Jin and S. Hsu, “40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,” European
Solid-state Circuit Conference (ESSCIRC), pp. 520-523, Montreux, Sep.
2006.
[105] J. Jin, S. Hsu, M. Yang, and S. Liu, “Low-loss single
and differential semi-coaxial interconnects in standard CMOS process,” IEEE
MTT-S Int. Microwave Symp. Dig., pp. 420-423,
San Francisco, June 2006.
[106] C. Hsiao, M. Kao, C.
Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “3.2
Gbit/s CML transmitter with 20:1 multiplexer in 0.18-µm CMOS technology,”
IEEE Int. Conf. Mixed Design of Integrated Circuits and
Systems, pp. 179-183, June 2006.
[107] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu “InP/GaAsSb/InP DHBT technology and its application to MM-wave
integrated oscillators,” proc. 30th Workshop on Compound
Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Fiskebäckskil,
S. 51-53, May 2006.
[108] D. Pavlidis, P. Valizadeh, and
S. Hsu, “AlGaN/GaN
high electron mobility transistor (HEMT) reliability,” European
Microwave Conf., Paris, pp. 265-268, Oct. 2005.
[109] C. Chiu, J. Wu, S.
Hsu, M. Kao, C. Jen, and Y. Hsu, “A 10Gb/s
wide-band current-mode logic I/O interface for high-speed interconnect in
0.18-µm CMOS technology,” IEEE Int. SOC Conf., pp. 257-260, Sep.
2005.
[110] L. Fan, W. Huang, C.
Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu, A. Jin,
K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien,
A. Yeh, J. Chen, W. Wu, and C. Lai, “Magnetic
resonance Microsystems for life science applications,” Proc. of
Transducers 2005, pp.1998-2001, Seoul, Korea, June 2005.
[111] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, “First demonstration
of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP
DHBTs,” IEEE MTT-S Int.
Microwave Symp. Dig., pp. 101-103, June 2005.
[112] S. Hsu and D. Pavlidis, “Analysis
and modeling of dispersion characteristics in AlGaN/GaN MODFETs,” proc.
25th IEEE GaAs IC Symposium, pp. 119-122, Nov. 2003.
[113] D. Pavlidis, S. M. Hubbard, S. Hsu and S. Seo “AlGaN/GaN and AlN/GaN heterostructuredevices:
A possible device technology for high RF power wireless transmission” 2003 Japan-United States Joint Workshop on
Space Solar Power System (JUSPS'03), July, 2003, Kyoto, Japan
[114] X. Zhu, S. Hsu and
D. Pavlidis, “First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs,” Topical Workshop on
Heterostructure Microelectronics for Information Systems Applications,
Okinawa, Japan, pp. 18-19, Jan. 2003.
[115] D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh, “GaN device and material considerations: A
tutorial and general discussion” 2002
GaAs REL Workshop, Monterey, Oct. 2002.
[116] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Impacts
of RF stress on dispersion effects andpower characteristics for AlGaN/GaN
HEMTs,” proc. 24th IEEE GaAs
IC Symposium,
pp. 85-88, 2002.
[117] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Characterization
and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs,” proc. IEEE Lester
Eastman conference, pp. 453-460, 2002.
[118] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Study
on large-signal linearity and efficiency of AlGaN/GaN MODFETs,” proceeding of 32nd European microwave
conference,
pp. 1-4, 2002.
[119] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins,” proc. 26th Workshop on Compound
Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Chernogolovka, pp. 115-116, May
2002.
[120] D. Cui, D. Pavlidis, S. Hsu, D. Sawdai,
P. Chin and T. Block, “InP-based NPN-PNP HBT
common collector push-pull monolithic integrated amplifiers,” proc. 26th Workshop on
Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE),
Chernogolovka, pp. 147-148, May 2002.
[121] S. Hsu, D. Pavlidis, J. Moon, M. Micovic,
C. Nguyen, and D. Grider, “Low
noise AlGaN/GaN MODFETs with high breakdown and power characteristics,”23rd
IEEE GaAs IC Symposium, pp. 229-232, Oct. 2001.
[122] S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, “Low noise, high-speed
InP/InGaAs HBTs,” 23rd IEEE GaAs IC Symposium, pp. 188-191, Oct. 2001.
[123] S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic,
C. Nguyen, D. Grider, “High frequency
noise studies in AlGaN/GaN
MODFETs,” proceeding of
25th Workshop on Compound Semiconductor Devices and Integrated
Circuits in Europe (WOCSDICE), Cagliari,
pp.147-148, May 2001.
[124] D. Cui, S. Hsu and
D. Pavlidis, “First InP/InGaAs
PNP HBT grown by metal organic chemical vapor deposition”, 13th IEEE
Int. Conf. Indium Phosphide and Related materials (IPRM’01), Nara,
Japan, pp. 224-227, May 2001.
[125] E. Alekseev, S. Hsu,
D. Pavlidis, T. Tsuchiya and M. Kihara, “Broadband AlGaN/GaN HEMT
MMIC attenuators with high dynamic range,” Proceeding
of 30th European microwave
conference,
2000.
[126] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis,
P. Chin and T. Block, “Low
DC power, high gain-bandwidth product, coplanar Darlington feedback
amplifiers using InAlAs/InGaAs heterojunction bipolar transistors,” 22nd IEEE GaAs IC
Symposium, pp.259-262, 2000.
[127] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T. Block, “High power performance
using InAlAs/InGaAs single HBTs,” 12th IEEE Indium Phosphide and
Related Materials (IPRM’00), Williamsburg, VA, May 15-19, pp.
473-476, 2000.
[128] D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S.
Hsu, “Hole
impact ionization coefficient in (100)-oriented In0.53Ga0.47As,” 12th IEEE Indium Phosphide and Related
Materials (IPRM’00), Williamsburg, pp. 258-261, May 2000.
[129] S. Hsu, P.N. Tan, D.
Pavlidis, E. Alekseev, N.X. Nguyen, C. Nguyen,
and D.E. Grider, “Frequency
dependent output resistance and transconductance in ALGaN/GaN MODFETs,” Proceeding of 1999 International
Semiconductor Device Research Symposium (ISDRS), Charlottesville, pp. 315-317, Dec. 1999.
[130] S. Hsu, D. Sawdai, and D. Pavlidis, “Modeling of
highly-nonlinear HBT characteristics using a distributed thermal subcircuit
derived from pulsed measurements,” 53rd ARFTG conference (MTT
Symposium) Digest, Anaheim, pp.139-145, June 1999.
[131] S. Hsu, B. Bayraktaroglu and D. Pavlidis,
“Comparison of
conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,” Topical Workshop on Heterostructure
Microelectronics for Information Systems Applications, Kanagawa, Japan,
Aug. 30-Sep. 2, pp. S3-6, 1998.
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