Wu, Meng-Chyi (吳孟奇)


Ph. D., National Cheng Kung University, ROC, 1986

Optoelectronic devices

Epitaxy of III-V compound semiconductors

E-mail: mcwu@ee.nthu.edu.tw


Dr. Meng-Chyi Wu was born on November 17, 1957, in Taipei, Taiwan. He received his B.S., M.S., and Ph.D. degrees in electrical engineering from National Cheng Kung University, Tainan, Taiwan, in 1981, 1983, and 1986, respectively.

He was appointed Associate Professor of Electrical Engineering at the National Tsing Hua University in 1988 and Full Professor in 1993. He is engaged in research on III-V compound semiconductors, material characterization, optoelectronic devices, and epitaxial techniques consisting of liquid-phase epitaxy, metalorganic chemical vapor deposition, and molecular-beam epitaxy.


Recent Publications

Journal Papers

  1. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Light induced negative differential resistance in planar InP/InGaAs/InP double heterojunction PIN photodiode”, Appl. Phys. Lett. 74, 4008-4010 (1999).
  2. C. Y. Lee, M. C. Wu,Y. D. Tian, W. H. Wang, W. J. Ho, and T. T. Shi, “Effects of rapid thermal annealing on InAsP/InP strained multiple quantum well lase diodes grown by metalorganic chemical vapor deposition”, Electron. Lett. 36, 1026-1028 (2000).

  3. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Comparison between planar InP/InGaAs/InP pin photodiodes with symmetrical and asymmetrical doping profiles”, IEE Pt. J., 147, 109-113 (2000).

  4. C.L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Bandwidth enhancement for p- end-illuminated InP/InGaAs/InP PIN photodiodes by utilizing symmetrical doping profiles”, IEEE J. Lightwave Technol. 17, 912-917 (1999).
  5. C. C. Lin, M. C. Wu, H. P. Shiao, and K. S. Liu High temperature, low threshold current, and uniform operation 1x12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser arrays in 1.5um, IEEE Trans. Electron Devices ED-46, 1614-1618 (1999).
  6. C. L. Ho, W. J. Ho, M. C. Wu, J. W. Liaw, and H. L. Wang, “Effectiveness of the pseudowindow for edge-coupled InP/InGaAs/InP PIN photodiodes”, IEEE J. Quantum Electron. 36, 333-339 (2000).

  7. C. C. Lin, M. C. Wu, W. H. Wang, and H. H. Liao, Highly uniform operation of high-performance 1.3um AlGaInAs-InP monolithic laser arrays, IEEE J. Quantum Electron. 36, 590-597 (2000).
  8. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, “Edge-coupled InGaAs p-i-n photodiode with a pseudowindow”, accepted by IEEE Trans. Electron Devices. Vol. ED-47, No. 11 (2000).