International Journal Papers

[J.1] Ko-Tao Lee, Chih-Fang Huang, and Jeng Gong, “High Quality MgO/TiO2/MgO Nanolaminates on p-GaN MOS Capacitor,”IEEE Electron Device Letters, Vol. 31, No. 6, pp 558-560, 2010.

[J.2] Wei-Yu Chen, Wei-Lin Wang, Jui-Min Liu, Chien-Cheng Chen, Jenn-Chang Hwang, Chih-Fang Huang, and Li Chang, “Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method,”Journal of The Electrochemical Society,Vol. 157, No. 3, pp.H377-380, 2010.

[J.3] Kung-Yen Lee, Shin-Yi Lee and Chih-Fang Huang, “Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth,”Material Science Forum,Vols. 645-648, pp.123-126, 2010.

[J.4] Chih-Fang Huang*, Cheng-Li Kan, Tian-Li Wu, Yo-Zthu Liu, Meng-Chia Lee, Kung-Yen Lee, and Feng Zhao, “3510 V 390 mΩ-cm² 4H-SiC Lateral JFET on a Semi-insulating Substrate,”  IEEE Electron Device Letters, Vol. 30, No. 9, pp. 957-959, 2009. 

[J.5] Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou, “Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN with Post- Metallization Annealing and (NH4)2Sx Treatments,”IEEE Electron Device Letters, Vol. 30, No. 9, pp. 907-909, 2009.

[J.6] Yu-Syuan Lin, Jia-Yi Wu, Chih-Yuan Chan, Shawn S. H. Hsu, Chih-Fang Huang, and Ting-Chi Lee, “Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics,” IEEE Transactions on Electron Devices, Vol. 52, No. 16, pp. 3207-3211, 2009.

[J.7] Zhen-Yu Juang, Chih-Yu Wu, Chien-Wei Lo, Wei-Yu Chen, Chih-Fang Huang, Jenn-Chang Hwang, Fu-Rong Chen, Keh-Chyang Leou, and Chuen-Hotng Tsai, “Synthesis of Graphene on Silicon Carbide Substrates at Low Temperature,”Carbon, Vol. 47, no. 8, pp. 2026-2031, 2009.

[J.8] Wei-Yu Chen, Cien-Cheng Chen, Jenn-Chang Hwang, and Chih-Fang Huang, “Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process,” Crystal Growth & Design, vol. 9, no. 6, pp. 2616-2619, 2009.

[J.9] Chih-Fang Huang* and Chien-Yuen Tseng, “Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs,” Material Science Forum,Vols. 600-603, pp.1163-1166, 2009.

[J.10]Chih-Fang Huang*, Jin-Rong Kuo, and Chih-Chung Tsai, “High Voltage (3130V) 4H-SiC Lateral PN Diodes on a Semi-insulating Substrate,”IEEE Electron Device Letters, Vol. 29, No. 1, pp. 83-85, 2008.

[J.11]Kung-Yen Lee, Chih-Fang Huang, Wenzhou Chen, and Michael A. Capano, “The Impact of Surface Morphology on C- and Si-Face 4H-SiC Schottky Barrier Diodes,”Physica B: Condensed Matter, Vol. 401-402, pp. 41-43, 2007.

[J.12]Ivan Perez-Wurfl, Feng Zhao, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “4H-SiC bipolar transistors with UHF and L-band operation,”Material Science Forum, Vols. 527-529, pp. 1421-1424, 2006.

[J.13]Feng Zhao, Ivan Perez, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “Analysis of the Transit Times and Minority Carrier Mobility in NPN 4H-SiC Bipolar Junction Transistors,”IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2541-2545, 2005.

[J.14]Chih-Fang Huang and James A. Cooper, Jr., “High Current Gain Bipolar Junction Transistors,”IEEE Electron Device Letters, Vol. 24, No. 6, pp.396-398, 2003.

International Conference Papers

[C.1] Wei-Yu Chen, Jian-You Lin, Jenn-Chang Hwang, and Chih-Fang Huang, “Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-ray Photoelectron Spectroscopy,” 2010 MRS Spring Meeting, San Francisco, CA, April 5-9, 2010.

[C.2] Z.Y. Juang, C.Y. Wu, C.W. Lo, W.Y. Chen, C.F. Huang, J.C. Hwang, F.R. Chen, K.C. Leou, and C.H. Tsai, "Low-Temperature Synthesis of Graphene Using Silicon Carbide Substrates", E-MRS 2009 Spring Meeting, Strasbourg, France, June 8-12, 2009.

[C.3] Kung-Yen Lee, Gao-De Zeng, and Chih-Fang Huang, “Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth,” ICSCRM 2009, Nurrnberg, Germany, October 11-16, 2009.

[C.4] Chih-Fang Huang, Cheng-Li Kan, Tian-Li Wu, Meng-Chia Lee, Yo-Zthu Liu, Kung-Yen Lee, and Feng Zhao, “High Voltage Lateral 4H-SiC JFETs on a Semi-insulating Substrate” 67^th Device Research Conference, University Park, PA, June 22-24, 2009.

[C.5] Chun-Ming Hsu, Ray-Rong Lao, Jeng Gong, Chih-Fang Huang, “Response Analysis of Optically Modulated Scatterer Probes for Electromagnetic-field Measurement,” APMC 2009, Singapore, December 7-10, 2009.

[C.6] Chih-Fang Huang and Chien-Yuen Tseng, “Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs,” ICSCRM 2007, Otsu, Japan, October, 2007.

[C.7] Ivan Perez-Wurfl, Feng Zhao, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, “4H-SiC bipolar transistors with UHF and L-band operation,” ICSCRM 2005, Pittsburgh, PA, September, 2005.

[C.8] Feng Zhao, Ivan Perez-Wurfl, Chih-Fang Huang, John Torvik, and Bart Van Zeghbroeck, ”First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz,” IEEE MTT-S 2005 IMS, Long Beach, CA, June 12-17, 2005.

[C.9] Chih-Fang Huang, Ivan Perez-Würfl, Feng Zhao, John Torvik, Ronda Irwin, Are Kristoffer Torvik, Fesehaye Abrhaley, and Bart Van Zeghbroeck, “215 W Pulsed Class A UHF Power Amplification Base on SiC Bipolar Technology,” 62^nd Device Research Conference, South Bend, IN, June 21-23, 2004.

[C.10]Chih-Fang Huang and James A. Cooper, Jr., “4H-SiC Bipolar Junction Transistors with BV_CEO > 3,200V,” Proceedings International Symposium on Power Semiconductor Devices and ICs, pp.57-60, 2002.

[C.11]Chih-Fang Huang and James A. Cooper, Jr., “4H-SiC Power Bipolar Transistors with Common Emitter Current Gain > 50,” 60^th Device Research Conference, Santa Barbara, CA, June 24-26, 2002.

[C.12]Chih-Fang Huang and James A. Cooper, Jr., “High Performance Power BJTs in 4H-SiC,” IEEE Lester Eastman Conference on High Performance Devices, Newark, DE, August 6 - 8, 2002.

Patents

[P.1] “橫向高電壓積體電路元件”, 黃智方、郭晉榮、蔡志忠, 中華民國專利, 公開號200931664 (已申請專利)

[P.2] “一種在(100)矽基板上成長碳化矽薄膜的方法”, 陳威佑、陳建成、黃振昌、黃智方, 中華民國專利,申請號 097137650

[P.3] “一種在(111)矽基板上成長碳化矽薄膜的方法”, 黃振昌、黃智方、呂紹灝、陳威佑、劉瑞敏、賴瑋晟, 中華民國專利, 申請號098117565

Domestic Conference Papers

[D.1] Hung-Shih Chen, Meng-Sheng Chang, and Chih-Fang Huang, “A Quasi-Vertical IGBT for Power Integrated Circuit Applications,” 2008 Taiwan Power Electronics Conference and Exhibition, Tainan, Taiwan, Septemer, 2008.

[D.2] Qui-Chun Kao and Chih Fang Huang, “Design and Fabrication of High Voltage 4H-SiC Schottky Barrier Diodes with Mesa-JTE Protection,” The 28^th ROC Symposium on Electrical Power Engineering, KaoHsiung, Taiwan, December, 2007.

[D.3] 陳建成、陳威佑、古國欣、許景盛、黃振昌、 黃智方，”利用射頻感應加熱化學氣相沈積法成長立方碳化矽(3C-SiC)/矽(100) ”， 2007 Annual. Conf. of the Chinese Soc. for Mat. Sci., Taiwan.

[D.4] Chih Chung Tsai and Chih Fang Huang, “Simulation of the Static and Dynamic Characteristics of Lateral High Voltage SiC PN Diodes,” The 27^th ROC Symposium on Electrical Power Engineering, HsinChu, Taiwan, December, 2006.

[D.5] Chien-Yuen Tseng and Chih-Fang Huang, “Simulation of 4H-SiC NPN BJT,” The 27^th ROC Symposium on Electrical Power Engineering, HsinChu, Taiwan, December, 2006.

[D.6] 許景盛、葉峻銘、陳銘宇、黃振昌、黃智方、王嘉興、裘性天、寇崇善, ”類鑽碳奈米針狀結構在多晶碳化矽/矽(100)基板上的成長技術”, 2006 Annual. Conf. of the Chinese Soc. for Mat. Sci., Taiwan.

[D.7] 許景盛、葉峻銘、陳銘宇、黃振昌、甘政立、黃智方、寇崇善，”奈米柱狀碳化矽在二氧化矽/矽(100)基板上的成長技術”, 中華民國第二十七屆電力工程研討會, 2006, 新竹。