Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\images\image002.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\imgA.jpg

 Electrical Engineering Department, Institute of Electronics Engineering

 National Tsing Hua University, Hsinchu, Taiwan

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\images\shawn.jpg

 

 Shawn S. H. Hsu, Professor

 Delta Bldg. Room 858, shhsu@ee.nthu.edu.tw, 886-3-5731278

 

 PH. D. : Electrical Engineering, University of Michigan, Ann Arbor, USA

 M. S. :   Electrical Engineering, University of Michigan, Ann Arbor, USA

 B. S. :   Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

 

 

Research Interests

  • MMIC/RFIC: design high performance microwave/RF integrated circuits for wireless/optical communications
  • MW/RF Semiconductor Devices: design and fabricate high speed semiconductor devices for MMIC/RFIC
  • Power Electronics Devices: innovate and develop in-house technology (mainly nitride-based) for high efficiency power electronics applications
  • MW/RF System-on-Chip: design microwave/RF system-on-chip (SOC) with 3D IC and/or heterogeneous integration for next generation high speed wireless/optical communications

Honors and Recognition

  • 2016 National Chip Implementation (CIC) outstanding chip design award: best design award 
  • 2015 Industry-University Collaboration Merit Award, National Tsing Hua University
  • 2015 Symposium on Nano Device Technology Excellent Student Paper Award: 3rd place
  • 2014 Distinguished Professor, National Tsing Hua University
  • 2014 Outstanding teaching award, National Tsing Hua University
  • 2013 Outstanding Industry-University Collaboration Award, National Tsing Hua University
  • 2013 Best paper award, Asia-Pacific International Symposium on Electromagnetic Compatibility
  • 2013 National Chip Implementation (CIC) outstanding chip design award: honorable mention
  • 2012 National Chip Implementation (CIC) outstanding chip design award: best design award
  • 2011 Outstanding teaching award, National Tsing Hua University
  • 2011 National Chip Implementation (CIC) outstanding chip design award: best design award 
  • 2011 National Chip Implementation (CIC) outstanding chip design award: honorable mention
  • 2011 Symposium on Nano Device Technology Excellent Student Paper Award: 2nd place
  • 2010 TSMC outstanding student research award: honorable mention
  • 2009 Outstanding young electrical engineer award, the Chinese Institute of Electrical Engineering, Taiwan
  • 2009 National Chip Implementation (CIC) outstanding chip design award: best design award 
  • 2009 National Chip Implementation (CIC) outstanding chip design award: honorable mention
  • 2008 MXIC golden silicon awards: honorable mention
  • 2008 National Chip Implementation (CIC) outstanding chip design award: best design award
  • 2007 Junior faculty research award, National Tsing Hua University
  • 2007 Junior faculty research award, College of Electrical Engineering and Computer Science, National Tsing Hua University
  • 2007 Outstanding teaching award, National Tsing Hua University
  • 2007 MXIC golden silicon awards: 1st place
  • 2007 MXIC golden silicon awards: Distinguished advisor award
  • 2007 National Chip Implementation (CIC) outstanding chip design award: special design award
  • 2007 National Chip Implementation (CIC) outstanding chip design award: honorable mention
  • 2007 Symposium on Nano Device Technology NDL excellent student paper award
  • 2006 Outstanding teaching award, College of Electrical Engineering and Computer Science, National Tsing Hua University
  • 2006 TSMC outstanding student research award: 3rd place

 

 Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgA1.jpg 

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgC.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgD.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgE.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgF.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.9.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.12.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.10.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.13.jpg

Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\SC line.gif

 

Group Members

 

Courses

 

TPC Members

  • Asia Pacific Microwave Conference (2016 - present)
  • IEEE Intl. Wireless Symposium (2013 - present)
  • IEEE Intl. Symposium Radio-Frequency Integration Technology (2012 - present)
  • IEEE Asia Solid State Circuit Conference (2008 - 2013)
  • Intl. Conf. Solid State Devices and Materials (2008 - 2012)
  • IEEE Symposium Next-Generation Electronics (2014)

 

Publication List

Journal papers (* indicates corresponding author)

[1]   Y. Chang, P. Wang, D. Chang, and S. Hsu*, “Wideband conducted electromagnetic emission measurements using IPD chip probes,” IEEE Trans. Microwave Theory Techn., vol. 64, no. 11, pp. 4063-4070, Nov. 2016.

[2]   C. Tsou, H. Kang, Y. Lian, and S. Hsu*, “AlGaN/GaN HEMTs on silicon with hybrid Schottky-Ohmic drain for RF applications,” IEEE Trans. Electron Devices, vol. 63, no. 11, pp. 4218-4225, Nov. 2016.

[3]   C. Tsou, K. Wei, Y. Lian, and S. Hsu*, “2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga’s figure-of-merit,” IEEE Electron Device Letters., vol. 37, no. 1, pp. 70-73, Jan.  2016.

[4]  C. Lee, H. Hsieh, and S. Hsu*, “A low-power miniature 20-Gb/s passive/active hybrid equalizer in 90nm CMOS,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 10, pp. 669-671, Oct. 2015.

[5]  C. Tsou, C. Lin, Y. Lian, and S. Hsu*, “101-GHz InAlN/GaN HEMTs on silicon with high Johnson’s figure-of-merit,IEEE Trans. Electron Devices, vol. 62, no. 8, pp. 2675-2678, Aug. 2015.

[6]  K. Tan, T. Chu, and S. Hsu*, “A 76.2-89.1 GHz phase-locked loop with 15.6% tuning range in 90nm CMOS for W-band applications,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 8, pp. 538-540, Aug. 2015.

[7]  K. Tan, A. Lo, T. Chu, and S. Hsu*, “A K-band reconfigurable pulse-compression automotive radar transmitter in 90 nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 63, no. 4, pp. 1380-1387, Apr. 2015.

[8]  Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “Drain E-field manipulation in AlGaN/GaN HEMTs by Schottky extension technology,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 519-524, Feb. 2015.

[9]  F. Chen, M. Kao, Y. Hsu, J. Wu, C. Chiu, S. Hsu, and M. F. Chang, “A 10-Gb/s low jitter single-loop clock and data recovery circuit with rotational phase frequency detector,” IEEE Trans. Circuits and Systems I (TCAS I), vol. 61, no. 11, Nov. 2014.

[10]    C. Yeh, Y. Lain, Y. Chiu, C. Liao, D. Moyano, S. Hsu, and P. Chiu, “Gigahertz flexible graphene transistors for microwave integrated circuits,” ACS nano, 2014, 8(8), pp. 7663-7670, July 2014 (2014 impact factor: 12.033)

[11]    S. Huang, J. Wang, C. Lan, S. Hsu*, S. Li, P. Tseng, C. Lin, and S. Sheu, “An ultra compact millimeter-wave VCO in 3D IC technology,” IEEE Microwave and Wireless Components Lett, vol. 24, no. 4, Arp. 2014.

[12]   C. Hsiao, T. Su, and S. Hsu*, “CMOS distributed amplifiers using gate-drain transformer feedback technique,” IEEE Trans. Microwave Theory Tech., vol. 61, no. 8, pp. 2901-2910, Aug. 2013.

[13]   Y. Lian, Y. Lin, J. Yang, C. Cheng, and S. Hsu*, “AlGaN/GaN Schottky barrier diodes on silicon substrates with selective Si diffusion for low onset voltage and high reverse blocking,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 981-983, Aug. 2013.

[14]   C. Hsieh, J. Hwang, T. Chang, J. Li, S. Chen, L. Mao, L. Tsai, Y. Chueh, P. Lyu, and S. Hsu, “Enhanced mobility of organic thin film transistors by water absorption of collagen hydrolysate gate dielectric,” Applied Physics Lett. 103, 023303 (2013)

[15]    Y. Hsu, Y. Lin, C. Chiu, J. Wu, S. Hsu, F. Chen, M. Kao, W. Lai, and Y. Hsu, “A low propagation delay load balanced 4 x 4 switch fabric IC in 0.13 mm CMOS technology,” IEEE Trans. VLSI, vol. 21, no. 8, pp. 1481-1495, Aug. 2013.

[16]   Y. Lin, Y. Lian, J. Yang, H. Lu, Y. Huang, C. Cheng, and S. Hsu*, “Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement,” Semiconductor Science and Technology, vol. 28, 074018, July 2013. (invited)

[17]    L. Mao, J. Hwang, T. Chang, C. Hsieh, L. Tsai, Y. Chueh, S. Hsu, P. Lyu, and T. Liu, Pentacene organic thin-film transistors with solution-based gelatin dielectric,”  Organic Electronics, vol. 14, issue 4, pp. 1170-1176, Apr. 2013.

[18]    M. Tsai, S. Huang, and S. Hsu, ESD protection design for V-band low-noise amplifier using RF junction varactors,” Jpn. Journal of Applied Physics, 04CE09, 1-6, March 2013.

[19]    M. Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “Design of 60-GHz low-noise amplifiers with low NF and robust ESD protection in 65-nm CMOS,” IEEE Trans. Microwave Theory Tech., vol. 61, no. 1, pp. 553-561, Jan. 2013.

[20]    W. Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel low gate-count pipeline topology with multiplexer-flip-flops for serial link,” IEEE Trans. Circuits and Systems I (TCAS I), vol. 59, no. 11, pp. 2600-2610, Nov. 2012.

[21]    M. Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “A 17.5-26 GHz low-noise amplifier with over 8-KV ESD protection in 65-nm CMOS,” IEEE Microwave and Wireless Component Lett. vol. 22, no. 9, pp. 483-485, Sep. 2012.

[22]    Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “AlGaN/GaN HEMTs on silicon with hybrid Schottky-Ohmic drain for high breakdown voltage and low leakage current,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 973-975, July 2012.

[23]    P. Chang, S. Su, S. Hsu*, W. Cho, and J. Jin, “An ultra-low-power transformer-Feedback 60 GHz low-noise amplifier in 90 nm CMOS,” IEEE Microwave and Wireless Component Lett. vol. 22, no. 4, pp. 197-199, Apr. 2012.

[24]    M. Tsai and S. Hsu*, “A V-Band Low-Noise Amplifier Co-Designed with ESD Network in 65-nm RF CMOS,” Microwave Optical Technology Letters, vol. 54, no. 3, pp. 820-822, March 2012.

[25]    M. Tsai, S. Hsu*, F. Hsueh, and C. Jou, “ESD-protected K-band low-noise amplifiers using RF junction varactors in 65-nm CMOS,” IEEE Trans. Microwave Theory Tech., vol. 59, no. 12, pp. 3455-3462, Dec. 2011.

[26]    C. Hsiao, S. Hsu*, and D. Chang, “A compact V-band bandpass filter in IPD technology,” IEEE Microwave and Wireless Component Lett. vol. 21, no. 10, pp. 531-533, Oct. 2011.

[27]    M. Tsai and S. Hsu* “A 24-GHz low-noise amplifier using RF junction varactors for noise optimization and CDM ESD protection in 90-nm CMOS,” IEEE Microwave and Wireless Component Lett., vol. 21, no. 7, pp. 374-376, July 2011.

[28]    W. Cho and S. Hsu*, “An ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology,” IEEE Microwave and  Wireless Component Lett., vol. 20, no. 12, pp. 681-683, Dec. 2010.

[29]    M. Tsai, S. Hsu*, F. Hsueh, and C. Jou , "A multi-ESD-path low-noise amplifier with a 4.3-A TLP current level in 65-nm CMOS," IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4004-4011, Dec. 2010.

[30]    P. Chang and S. Hsu*, "A compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-μm CMOS," IEEE Trans.

           Microwave Theory Tech., vol. 58, no. 10, pp. 2575-2581, Oct. 2010.

[31]    W. Chang, K. Tan, and S. Hsu*, "A 56.5-72.2 GHz transformer-injection Miller frequency divider in 0.13 μm CMOS," IEEE Microwave and Wireless Component Letters, vol. 20, no. 7, pp. 393-395, July, 2010.

[32]    T. Lin, P. Chang, H. chiu, M. Hong, J. Kwo, Y. Lin, and S. Hsu, "DC and RF characteristics of self-aligned inversion-channel In0.53Ga0.47As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics," J. Vacuum Science and Technology B, 28(3), May/Jun, C3H14 (2010).

[33]    Y. Chang, W. Chang, Y. H. Chang, J. Kwo, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, "Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric," J. Microelectronic Engineering, 87(2010) 2042-2045.

[34]    Y. Lin, Y. Lian, and S. Hsu*, "AlGaN/GaN HEMTs with low leakage current and high on/off current ratio," IEEE Electron  Device Letters, vol. 31, no. 2, pp. 102-104, Feb. 2010.

[35]    Y. Lin, J. Wu, C. Chan, S. Hsu*, C. Huang, and T. Lee, “Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics,” IEEE Trans. Electron Devices, vol 56, no. 12, pp. 3207-3211, Dec. 2009.

[36]    M. Tsai, S. Hsu*, F. Hsueh, C. Jou, S. Chen, and M. Song, “A wideband low noise amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS,” IEEE Microwave and Wireless Component Letters, vol. 19, no. 11, pp. 734-736, Nov. 2009. 

[37]    J. Jin and S. Hsu*, “A K-band low-noise amplifier in 0.18-μm CMOS technology for sub-1-V operation,” Microwave Optical

Technology Letters, vol. 51, no. 9, pp. 2202-2204, 2009.

[38]    M. Kao, J. Wu, C Lin, F. Chen, C. Chiu, and S. Hsu, “A 10-Gb/s CML I/O circuit for backplane interconnection in 0.18-μm CMOS technology,” IEEE Trans. VLSI Systems, vol. 17, no. 5, pp. 688-696, May 2009.

[39]    Y. Wu, S. Hsu*, K. Tan, and Y. Su, "Substrate noise coupling reduction in LC voltage-controlled oscillators," IEEE Electron Device Letters, vol. 30, no. 4, pp. 383-385, Apr. 2009.

[40]    Y. Wei, S. Hsu*, and J. Jin, "A low-power low-noise amplifier for K-band applications," IEEE Microwave and Wireless Component Lett., vol. 19, no. 2, pp. 116-118, Feb. 2009.

[41]    J. Jin and S. Hsu*, "A 75-dBΩ 10-Gb/s transimpedance amplifier in 0.18-μm CMOS technology," IEEE Photon. Tech. Lett., vol. 20, no. 24, pp. 2177-2179, Dec. 2008.

[42]    J. Jin and S. Hsu*, "A miniaturized 70-GHz broadband amplifier in 0.13-µm CMOS technology," IEEE Trans. Microwave Theory Tech., vol. 56, no. 12, pp. 3086-3092, Dec. 2008.

[43]    C. Chan, S. Chen, M. Tsai, and S. Hsu*, "Wiring effect optimization in 65-nm low-power NMOS," IEEE Electron Device Letters, vol. 29, no. 11, pp. 1245-1248, Nov. 2008.

[44]    C. Chan, Y. Huang, J. Chen, S. Hsu*, and Y. Juang, "STI-to-gate distance effects on flicker noise characteristics in 0.13-µm CMOS," J. Solid-State Electronics, vol. 52, pp. 1182-1187, 2008. 

[45]    J. Jin and S. Hsu*, “A 40-Gb/s transimpedance amplifier in 0.18-µm CMOS technology,” IEEE J. Solid-State Circuits, vol. 43, no. 6, pp. 1449-1457, June, 2008.

[46]    J. Jin, S. Hsu*, T. Yeh, M. Yang, and S. Liu, “Fully analytical modeling of Cu interconnects up to 110 GHz,” Jpn. Journal of Appl. Physics, vol. 47, no. 4, pp. 2473-2476, Apr. 2008.

[47]    J. Jin and S. Hsu*, “A 1-V, 45-GHz balanced amplifier with 21.5-dB gain using 0.18-μm CMOS technology,” IEEE Trans. Microwave Theory Tech., vol. 56, no. 3, pp. 599-603, March 2008.

[48]    J. Jin and S. Hsu*, “A 0.18-μm CMOS balanced amplifier for 24-GHz applications,IEEE J. Solid-State Circuits, vol. 43, no. 2, pp. 440-445, Feb. 2008.

[49]    C. Chan, Y. Lin, J. Jin, S. Hsu*, Y. Huang, and Y. Juang, “Impact of STI effect on flicker noise in 0.13-µm RF N-MOSFETs,” IEEE Trans. Electron Devices, Vol. 54, No. 12, pp. 3383-3392, Dec., 2007.

[50]    H. Lin, S. Hsu*, C. Chan, and Y. Lin, “A wide locking-range frequency divider for LMDS applications,” IEEE Trans. Circuits

and Systems II, Vol. 54, No. 9, pp. 750-754, Sep. 2007.

[51]    Y. Lin, S. Koa, C. Chan, S. Hsu*, H. Lee, and S. Gwo, "High current density InN/AlN heterojunction field-effect transistor with a SiNx gate dielectric layer," Applied Physics Letters 90, 142111, 2007.

[52]    C. Chan, T. Lee, S. Hsu*, L. Chen, and Y. Lin, “Impacts of gate recess and passivation on AlGaN/GaN HEMTs,” Jpn. Journal of Appl. Physics, Vol. 46, No. 2, pp. 478-484, Feb. 2007.

[53]    T. Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M. Hong, “Interfacial trap characteristics in depletion mode GaAs MOSFET’s,Journal of Crystal Growth, Vol. 301-302, April 2007, pp. 1009-1012.

[54]    Y. Lin, S. Hsu*, J. Jin, and C. Chan, “A 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique,” IEEE Microwave and Wireless Component Letters, vol. 17, No. 3, Mar. 2007.

[55]    J. Jin, S. Hsu*, M. T. Yang, and S. Liu, “Low-loss differential semi-coaxial interconnects in CMOS process,” IEEE Trans. Microwave Theory Tech., vol. 54, no. 12, pp. 4333-4340, Dec. 2006.

[56]    S. Hsu*, H. Zhu, “W-band multiple-ring resonator by standard 0.18-um CMOS technology,” IEEE Microwave and Wireless

Component Lett., pp. 832-834, Dec. 2005.

[57]    J. A. Yeh, C. A. Chang, C. -C. Cheng, J. -Y. Huang, and S. Hsu, “Microwave characteristics of liquid crystal tunable capacitors,” IEEE Electron Device Lett., vol. 26, pp. 451-453, July 2005.

[58]    S. Hsu and D. Pavlidis, “A comparison of low-frequency noise characteristics and noise origins in InP-based NPN and PNP heterojunciton bipolar transistors,” IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1974-1982, Sep. 2003.

[59]    S. Hsu, D. Pavlidis, and D. Sawdai, “Low-frequency noise characteristics of PNP InAlAs/InGaAs HBTs,” IEEE Electron Device Letters, vol. 23, no. 12, pp. 688-690, Dec. 2002.

[60]    D. Cui, D. Pavlidis, S. Hsu, and A. Eisenbach, “Comparison of DC, high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition,” IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 725-732, May, 2002.

[61]    D. Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin, and T. Block, “First demonstration of monolithic InP-based HBT amplifier with PNP active load,” IEEE Electron Device Letters, vol. 23, no. 3, pp. 114-117, Mar. 2002.

[62]    D. Cui, S. Hsu, and D. Pavlidis, “DC and high frequency characterization of Metalorganic Chemical Vapor Deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor,” Jpn. J. of Appl. Phys. Vol. 41, no. 2B, pp. 1143-1149, Feb, 2002.

[63]    D. Cui, S. Hsu and D. Pavlidis, Ka-band oscillators using InP-based HBTs,” J. of Solid-State Electronics, vol. 46, no. 2, pp. 249-253, Feb. 2002.

[64]    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S. Hsu “Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs,” IEEE Electron Device Letters, vol. 22, no. 5, pp. 197-199, May. 2001.

[65]    D. Sawdai, K. Yang, S. Hsu, D. Pavlidis, and G. Haddad, “Power performance of InP-Based single- and double-heterojunction  bipolar transistors,” IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1449-1456, Aug. 1999.

[66]    S. Hsu, B. Bayraktaroglu, and D. Pavlidis, “Comparison of conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs  HBTs for microwave power applications,” Journal of Solid-State Electronics, vol. 43, no. 8, pp. 1429-1436, 1999. 

 

 

Conference papers

[1]    Y. Chang, T. Lin, P. Wang, S. Hsu, M. Yen, Y. Chang, M. Lin, and D. Chang, “The design of current probe in the IEC conducted emission measurement above 1 GHz,” Int. Symp. on Antennas and Propagation (ISAP), Okinawa, Oct. 2016.

[2]  S. Hsu, Y. Li, C. Liao, P. Wang, Y. Liu, P. Chiu, S. Chen, K. Li, D. Thomson, and G. T. Reed, “Integration of high speed and low power CMOS front-end circuits with silicon photonic devices,” Int. Conf. on Solid State Devices and Materials, Sep. 2016. (invited)

[3]  S. Chen, P. Chiu, Y. Li, S. Hsu, K. Li, D. J. Thomson, and G. Reed, “High speed and low power silicon-based receiver front-end for optical interconnect,” IEEE Intl. Conf. Group IV Photonics (GFP), Aug. 2016.

[4]  D. J. Thomson, C. G. Littlejohns, K. Li, M. Nedeljkovic, A. Z. Khokhar, F. Y. Gardes, G. Z. Mashanovich, C. Lacava, P. Petropoulos, D. J. Richardson, M. S. Rouifed, H. Qiu, T. G. Xin, T. Hu, Z. Zhang, H. Wang, S. Hsu, and G. T. Reed, “Integrated silicon optical modulators,” Progress in Electromagnetics Research Symposium (PIERS), Aug. 2016. (invited)

[5]  S. Hsu, C. Tsou, Y. Lian, and Y. Lin, “GaN-on-silicon devices and technologies for RF and microwave applications,” IEEE Intl. Symp. Radio-Frequency Integration Technology, Aug. 2016. (invited)

[6]  P. Wang, M. Chou, Y. Chen, Y. Chang, D. Chang, and S. Hsu, “A Ku-band low-phase-noise transformer coupled VCO for satellite communications,” IEEE Intl. Symp. Radio-Frequency Integration Technology, Aug. 2016.

[7]    Y. Chang, P. Wang, S. Hsu, T. Lin, C. Hsieh, and D. Chang, “A V-band CPW Bandpass Filter with Controllable Transmission Zeros in Integrated Passive Devices (IPD) Technology,” IEEE Int. Microwave Symposium (IMS), San Francisco, May 2016.

[8]   Y. Chang, P. Wang, S. Hsu, Y. Chang, C. Chen, and D. Chang, “Impact and improvement of resistor process variation on RF passive circuit design in Integrated Passive Devices (IPD) technology,” Intl. Conf. on Solid State Devices and Materials (SSDM), pp. 74-75, Sapporo, Sept. 2015.

[9]  P. Wang, Y. Shen, M. Chou, T. Wu, M. Chen, Y. Chang, D. Chang, and S. Hsu, “A BiCMOS Monolithic Ka-band Down-Converter for satellite communication systems,” IEEE Int. Microwave Symposium, San Francisco, May 2015.

[10]   Y. Chang, P. Wang, S. Hsu, M. Yen, Y. Chang, C. Chen, and D. Chang, “Design of the Multifunction IC-EMC Test Board with Off-Board Probes for Evaluating a Microcontroller,” IEEE Asia-Pacific Symp. on Electromagn. Compat. (APEMC), pp. 223-226, Taipei, May 2015.

[11]    S. Hsu, P. Wang, P. Su, M. Chou, Y. Chang, and D. Chang, “Design of Ku/Ka band down-converter front-end for digital broadcast satellite receivers,” IEEE Int. Wireless Symposium, Mar. 2015. (invited)

[12]    P. Wang, T. Wu, M. Chou, M. Chen, Y. Chang, D. Chang, and S. Hsu, “Design of wideband sub-harmonic receiver front-end using 0.18-um BiCMOS technology,” IEEE Int. Wireless Symposium, Mar. 2015.

[13]    P. Wang, T. Wu, M. Chen, Y. Shen, Y. Chang, D. Chang, and S. Hsu, “A low phase noise class-C VCO using novel 8-shaped transformer,” IEEE Int'l Symp. Circuits & Systems (ISCAS), May 2015.

[14]   P. Wang, Y. Shen, M. Chou, Y. Chang, T. Wu, D. Chang, and S. Hsu, “Design of fully integrated receiver front-end for VSAT applications,” IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan., 2015.

[15]   P. Wang, Y. Shen, M. Chou, K. Chuang, Y. Chang, D. Chang, and S. Hsu, “Design of 24 GHz CMOS VCO using Armstrong topology with asymmetric transformer,” IEEE Asia-Pacific Microwave Conference (APMC), 2014.

[16]    P. Wang, Y. Chang, K. Chuang, D. Chang, and S. Hsu, “A low phase noise 24 GHz CMOS quadrature-VCO using PMOS-source-follower coupling technique,” Proc. 44th European Microwave Circuits Conf. (EuMC), Oct. 2014, pp. 572-575.  

[17]    J. Y.-C. Liu, C. Chan, and S. Hsu, “A K-band power amplifier with adaptive bias in 90-nm CMOS,” Proc. 44th European Microwave Circuits Conf. (EuMC), Oct. 2014, pp.  1376-1379.

[18]   P. Wang, M. Chou, P. Su, Y. Chang, K. Chuang, and S. Hsu, “A fully integrated Ku-band down-converter front-end for DBS receivers,” IEEE Int. Microwave Symposium, Tampa Bay, June 2014.

[19]  Y. Chang, P. Wang, S. Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, “Investigation on realizing 1Ω current probe complied with IEC 61967-4 direct coupling method,” in Proc. International Symposium on Electromagnetic Compatibility (EMC’14), pp. 573-576, Tokyo, Japan, May 2014. (Best paper award finalist)

[20]   M. Tsai and S. Hsu, “ESD protection design for microwave/millimeter wave low-noise amplifiers,” IEEE Int. Wireless Symposium, Mar. 2014. (invited)

[21]    Y. Chang, S. Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, ”The direct RF power injection method up to 18 GHz for Investigating IC's Susceptibility, in Proc. International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMCCompo), pp. 167-170, Nara, Japan, Dec. 2013.

[22]    G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. Wilson, L. Zimmermann, H. Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli, K. Debnath, T. Krauss, and L. O’Faolain, “Options for silicon based modulators,” Frontiers in Optics 2013, Orlando, October 2013. (invited)

[23]    G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. W. Wilson, L. Zimmermann, H. Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli, K. Debnath, T. Krauss, and L. O’Faolain, “Silicon optical modulators for short reach interconnect,” Int. Conf. on Solid State Devices and Materials (SSDM), Fukuoka, Sep. 2013. (invited)

[24]   C. Tsou, Y. Lian, J. Hung, Y. Lin, and S. Hsu, “AlGaN/GaN HEMTs on silicon with hybrid source/drain for source-drain scaling and frequency dispersion suppression,” 2013 Int. Conf. on Solid State Devices and Materials (SSDM). (late news)

[25]    D. Thomson, F. Gardes, Y. Hu, G. Mashanovich, G. Reed, L. Zimmermann, D. Knoll, S. Lischke, H. Porte, B. Goll, H. Zimmermann, L. Ke, P. Wilson, S. Chen, S. Hsu, G. Duan, A. Le Liepvre, C. Jany, A. Accard, M. Lamponi, D. Make, F. Lelarge, S. Messaoudene, D. Bordel, J. Fedeli, S. Keyvaninia, G. Roelkens, and D. Van Thourhout, Integration of high performance silicon optical modulators,” IEEE Group IV Photonics, Seoul, Aug. 2013. (invited)

[26]    Y. Chang, S. Hsu, H. Cheng, and D. Chang, “The practical measurement setup of DPI method above 1 GHz for ICs,” in IEEE Proc. Asia-Pacific Symp. Electromagnetic Compatibility, Melbourne, May 2013. (Best paper award)

[27]    M. Tsai, H. Hsieh, C. Lin, L. Chu, S. Hsu, J. Jin, T. Yeh, C. Jou, F. Hsueh, and M. Ker, “A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS,” in Proc. IEEE Asia-Pacific Microwave Conference, pp. 747-749, Kaohsiung, Dec. 2012.

[28]    M. Tsai, S. Huang, and S. Hsu, “ESD protection design for V-band low-noise amplifier using RF junction varactors,” Int. Conf. on Solid State Devices and Materials (SSDM), Kyoto, Sep. 2012.

[29]    K. Tan, C. Lai, P. Lu, C. Tu, G. Huang, J. Wu, S. Hsu, and T. Chu, “A 79GHz UWB Pulse-Compression Vehicular Radar in 90nm CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.

[30]     M. Tsai, S. Hsu, T. Yeh, C. Jou, and F. Hsueh, “A V-band low-noise amplifier with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.

[31]    Y. Chang, B. Wang, S. Hsu, Y. Chang, C. Chen, Y. Juang, H. Cheng and D. Chang, “The evaluation flow for EMC behavior of RF ICs,” in Proc. IEEE Asia-Pacific Symp. on Electromagn. Compat , pp. 321-324, Singapore, May, 2012.

[32]    S. Hsu, W. Cho, S. Chen, and J. Jin, “CMOS Broadband Amplifiers for Optical Communications and Optical Interconnects,” IEEE Int. Symp. Radio-Frequency Integration Technology, Beijing, Dec. 2011. (invited)

[33]    Y. Chang, D. Chang, S. Hsu, J. Lee, S. Lin, and Y. Juang, “A matrix-computation based methodology for extracting the S-Parameters of interconnects in advanced packaging technologies,” in Proc. IEEE Asia-Pacific Microwave Conference, pp. 1909-1912, Dec. 2011.

[34]    S. Hsu and M. Tsai, “Low-noise amplifiers with robust ESD protection for RF SOC,” Inter. SoC Design Conference, Jeju, Nov.  2011. (invited)

[35]    Y. Chang, S. Hsu, D. Chang, J. Lee, S. Lin, and Y. Juang, “A de-embedding method for extracting S-parameters of vertical interconnect in advanced packing,” in Proc. IEEE Int. Conf. Electrical Performance of Electronic Packaging and Systems, pp. 219-222, San Jose, Oct. 2011.

[36]    C. Yu, C. Huang, P. Chu, K. Chen, S. Hsu, H. Chiu, and F. Zhao, “High-voltage AlGaN/GaN HEMTs on Si substrate with implant isolation,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Sep. 2011.

[37]    Y. Lin, Y. Lian, H. Lu, Y. Huang, and S. Hsu, “AlGaN/GaN HEMTs on silicon with hybrid schottky-ohmic drain for improved DC characteristics,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Sep. 2011.

[38]    J. Wang, T. Huang, Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku, and C. Lin, “Testkey design of through silicon vias (TSVs) for accurate de-embedding and RF model parameters extraction,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Sep. 2011.

[39]     M. Tasi, S. Hsu, T. Yeh, J. Jin, H. Hsueh, C. Jou, and F. Hsueh, “A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS,IEEE Int. Microwave Symposium, Baltimore, June 2011.

[40]     F. Chen, M. Kao, Y. Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu, “A 10 to 11.5 GHz rotational phase and frequency detector for clock recovery circuit,” IEEE Int. Symp. Circuits and Systems (ISCAS), Rio de Janeiro, May 2011 (Best Student Paper Contest Finalist).

[41]     M. Tasi, S. Hsu, F. Hsueh, C. Jou, M. Song, J. Tseng, T. Chang, and D. Nag, “An analog front-end circuit with dual-directional SCR ESD protection for UHF-band passive RFID Tag,” IEEE Int. Conf. RFID, Orlando, pp. 206-209, April 2011.

[42]     C. Luo, Y. Wu, J. Wang, and S. Hsu, “RF modeling of through silicon vias (TSVs) in 3D IC,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp. 239-240, Tokyo, Sep. 2010.

[43]     C. Hsiao, W. Wang, T. Su, Y. Wu, and S. Hsu, “A gate-drain coupling distributed amplifier in 90-nm CMOS technology,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp. 810-811, Tokyo, Sep. 2010.

[44]    W. Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel MUX-FF circuit for low power and high speed serial link interfaces,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 4305-4308, Paris, May 2010.

[45]    Y. Hsu, M. Kao, F. Chen, C. Chiu, J. Wu, and S. Hsu, “A 32Gbps low propagation delay 4´4 switch IC for feedback-based system in 0.13 µm CMOS technology,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 581-584, Paris, May 2010.

[46]    M. Tasi, F. Hsueh, C. Jou, M. Song, J. Tseng, S. Hsu, and S. Chen, A 6.5 kV ESD-protected low noise amplifier in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig., pp.485-488, Anaheim, May 2010.

[47]    S. Hsu and J. Jin, CMOS broadband amplifiers for optical communications,” Int. Symp. Microwave and Optical Technology, New Delhi, India, pp. 1251-1254, Dec. 2009 (invited).

[48]    Y. Lin, Y. Lian, S. Hsu, and T. Lee, “Low leakage AlGaN/GaN HEMTs with a high On/Off current ratio,” Int. Conf. on Solid State Devices and Materials (SSDM), Miyagi, Oct. 2009.

[49]    Y. Lian, Y. Lin, and S. Hsu, “High breakdown GaN Schottky diodes with buried P-layer structure,” Int. Conf. on Solid State Devices and Materials (SSDM), Miyagi, Oct. 2009.

[50]    M. Tasi, S. Hsu, and K. Tan, “A low noise amplifier co-designed with ESD protection circuit in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 573-576, Boston, June 2009.

[51]    S. Hsu, “Design techniques for CMOS broadband amplifiers,” CMOS Emerging Technologies Workshops, Banff, Feb. 2009 (invited).

[52]    Y. Lin, J. Wu, S. Hsu, C. Chan, and Y. Lian, “GaN-based Schottky varactors for high-power RF applications,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp. 506-507, Ibaraki, Sep. 2008.

[53]    J. Jin and S. Hsu, “A 70-GHz transformer-peaking broadband amplifier in 0.13-μm CMOS technology,” IEEE MTT-S Int. Microwave Symp. Dig., Atlanta, pp. 285-288, June 2008.

[54]    J. Jin and S. Hsu, “Wideband CMOS transimpedance amplifier design using transformer-peaking technique,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp. 492-493, Ibaraki, Sep. 2007.

[55]    J. Jin, S. Hsu, T. Yeh, M. Yang, S. Liu, “Fully analytical modeling of Cu interconnects up to 110 GHz,” Proc. Int. Conf. on Solid State Devices and Materials(SSDM), pp. 908-909, Ibaraki, Sep. 2007.

[56]    Y. Lin, T. Lee, Y. Wang, and S. Hsu, “Layout optimization of AlGaN/GaN HEMTs for high-power applications,” Proc. Int. Conf. on Solid State Devices and Materials (SSDM), pp. 156-157, Ibaraki, Sep. 2007.

[57]    S. Wang, Y. Wu, S. Hsu, and C. Chan, “Substrate coupling effect under various noise injection topologies in LC-voltage controlled oscillator,” IEEE RFIC Symp., pp. 705-708, Hawaii, June 2007.

[58]    C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y. Juang, “Edge-extended design for improved flicker noise characteristics in 0.13-µm RF NMOS,” IEEE MTT-S Int. Microwave Symp., pp. 441-444, Hawaii, June 2007.

[59]    C. Chiu, Y. Hsu, M. Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F. Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu, A scalable load balanced Birkhoff-von Neumann symmetric TDM switch IC for high-speed networking applications,” IEEE Int. Symp. Circuits and Systems, pp. 2754-2757, New Orleans, May 2007.

[60]    L. Fan, S. Hsu, J. Jin, C. Hsieh, W. Lin, H. Hao, H. Cheng, K. Hsueh, and C. Lee, “Miniaturization of magnetic resonance microsystem components for 3D cell imaging,” IEEE Int. Solid-State Circuit Conf. (ISSCC), San Francisco, pp. 166-168, Feb. 2007.

[61]    Y. Hsu, M. Kao, H. Tzeng, C. Chiu, J. Wu, and S. Hsu, “A 20Gbps scalable load balanced Birkhoff-von Neumann symmetric TDM switch IC with SERDES interfaces,” IEEE proc. 12th Asia and South Pacific Design Automation Conf., pp. 23-26, Yokohama, Jan. 2007.

[62]    C. Chan, P. Tsai, T. Lee, S. Hsu, J. Kwo, and M. Hong, “Flicker noise characteristics in GaAs MOSFETs,” MBE conf., Durham, Sep. 2006.

[63]    C. Chan, J. Jin, Y. Lin, S. Hsu, and Y. Juang, “STI effect on flicker noise in 0.13-µm RF NMOS,” European Solid-state Device Conference (ESSDERC), pp.101-104, Montreux, Sep. 2006.

[64]    J. Jin and S. Hsu, “40-Gb/s transimpedance amplifier in 0.18-µm CMOS technology,” European Solid-state Circuit Conference (ESSCIRC), pp. 520-523, Montreux, Sep. 2006.

[65]    J. Jin, S. Hsu, M. Yang, and S. Liu, “Low-loss single and differential semi-coaxial interconnects in standard CMOS process,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 420-423, San Francisco, June 2006.

[66]    C. Hsiao, M. Kao, C. Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “3.2 Gbit/s CML transmitter with 20:1 multiplexer in 0.18-µm CMOS technology,” IEEE Int. Conf. Mixed Design of Integrated Circuits and Systems, pp. 179-183, June 2006.

[67]    X. Zhu, J. Wang, D. Pavlidis, and S. Hsu “InP/GaAsSb/InP DHBT technology and its application to MM-wave integrated oscillators,” proc. 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Fiskebäckskil, S. 51-53, May 2006.

[68]    D. Pavlidis, P. Valizadeh, and S. Hsu, AlGaN/GaN high electron mobility transistor (HEMT) reliability,” European Microwave Conf., Paris, pp. 265-268, Oct. 2005.

[69]    C. Chiu, J. Wu, S. Hsu, M. Kao, C. Jen, and Y. Hsu, “A 10Gb/s wide-band current-mode logic I/O interface for high-speed interconnect in 0.18-µm CMOS technology,” IEEE Int. SOC Conf., pp. 257-260, Sep. 2005.

[70]    L. Fan, W. Huang, C. Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu, A. Jin, K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien, A. Yeh, J. Chen, W. Wu, and C. Lai, “Magnetic resonance Microsystems for life science applications,” Proc. of Transducers 2005, pp.1998-2001, Seoul, Korea, June 2005.

[71]    X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, “First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 101-103, June 2005.

[72]    S. Hsu and D. Pavlidis, “Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs,” proc. 25th IEEE GaAs IC Symposium, pp. 119-122, Nov. 2003.

[73]    D. Pavlidis, S. M. Hubbard, S. Hsu and S. SeoAlGaN/GaN and AlN/GaN heterostructuredevices: A possible device technology for high RF power wireless transmission” 2003 Japan-United States Joint Workshop on Space Solar Power System (JUSPS'03), July, 2003, Kyoto, Japan

[74]    X. Zhu, S. Hsu and D. Pavlidis, “First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs,” Topical Workshop on Heterostructure Microelectronics for Information Systems Applications, Okinawa, Japan, pp. 18-19, Jan. 2003.

[75]    D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh,GaN device and material considerations: A tutorial and general discussion” 2002 GaAs REL Workshop, Monterey, Oct. 2002.

[76]    S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain, “Impacts of RF stress on dispersion effects andpower characteristics for AlGaN/GaN HEMTs,” proc. 24th IEEE GaAs IC Symposium, pp. 85-88, 2002.

[77]    S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain, “Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs, proc. IEEE Lester Eastman conference, pp. 453-460, 2002.

[78]    S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain, “Study on large-signal linearity and efficiency of AlGaN/GaN MODFETs,” proceeding of 32nd European microwave conference, pp. 1-4, 2002.

[79]    S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain, “Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins,” proc. 26th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Chernogolovka, pp. 115-116, May 2002.

[80]    D. Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin and T. Block, “InP-based NPN-PNP HBT common collector push-pull monolithic integrated amplifiers,” proc. 26th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Chernogolovka, pp. 147-148, May 2002.

[81]    S. Hsu, D. Pavlidis, J. Moon, M. Micovic, C. Nguyen, and D. Grider, “Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics,”23rd IEEE GaAs IC Symposium, pp. 229-232, Oct. 2001.

[82]    S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, “Low noise, high-speed InP/InGaAs HBTs,” 23rd IEEE GaAs IC Symposium, pp. 188-191, Oct. 2001.

[83]    S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic, C. Nguyen, D. Grider, “High frequency noise studies in AlGaN/GaN MODFETs,” proceeding of 25th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Cagliari, pp.147-148, May 2001.

[84]    D. Cui, S. Hsu and D. Pavlidis, “First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition”, 13th IEEE Int. Conf. Indium Phosphide and Related materials (IPRM’01), Nara, Japan, pp. 224-227, May 2001.

[85]    E. Alekseev, S. Hsu, D. Pavlidis, T. Tsuchiya and M. Kihara,Broadband AlGaN/GaN HEMT MMIC attenuators with high dynamic range, Proceeding of 30th European microwave conference, 2000.

[86]    D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, P. Chin and T. Block, “Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using InAlAs/InGaAs heterojunction bipolar transistors, 22nd IEEE GaAs IC Symposium, pp.259-262, 2000.

[87]    D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T. Block, “High power performance using InAlAs/InGaAs single HBTs,” 12th IEEE Indium Phosphide and Related Materials (IPRM’00), Williamsburg, VA, May 15-19, pp. 473-476, 2000.

[88]    D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S. Hsu, “Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As,” 12th IEEE Indium Phosphide and Related Materials (IPRM’00), Williamsburg, pp. 258-261, May 2000.

[89]    S. Hsu, P.N. Tan, D. Pavlidis, E. Alekseev, N.X. Nguyen, C. Nguyen, and D.E. Grider, “Frequency dependent output resistance and transconductance in ALGaN/GaN MODFETs,” Proceeding of 1999 International Semiconductor Device Research Symposium (ISDRS), Charlottesville, pp. 315-317, Dec. 1999.

[90]    S. Hsu, D. Sawdai, and D. Pavlidis, “Modeling of highly-nonlinear HBT characteristics using a distributed thermal subcircuit derived from pulsed measurements,” 53rd ARFTG conference (MTT Symposium) Digest, Anaheim, pp.139-145, June 1999.

[91]    S. Hsu, B. Bayraktaroglu and D. Pavlidis, Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,” Topical Workshop on Heterostructure Microelectronics for Information Systems Applications, Kanagawa, Japan, Aug. 30-Sep. 2, pp. S3-6, 1998.

 

Last update: 2017/01/19