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[1]
S. Hsu, B. Bayraktaroglu, and D. Pavlidis, ¡§Comparison
of conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for
microwave power
applications,¡¨ Journal of Solid-State Electronics, vol. 43, no.
8, pp. 1429-1436, 1999.
[2]
D. Sawdai, K. Yang, S. Hsu, D. Pavlidis, and G. Haddad, ¡§Power
performance of InP-Based single- and double-heterojunction bipolar
transistors,¡¨ IEEE Trans. Microwave Theory Tech., vol. 47, pp.
1449-1456, Aug. 1999.
[3]
D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis,
and S. Hsu ¡§Measurements
of the InGaAs hole impact ionization
coefficient in InAlAs/InGaAs pnp HBTs,¡¨ IEEE Electron Device
Letters, vol. 22, no. 5, pp. 197-199, May. 2001.
[4]
D. Cui, S. Hsu and D. Pavlidis, ¡§Ka-band
oscillators using InP-based HBTs,¡¨
Journal of Solid-State Electronics, vol. 46, no. 2, pp. 249-
253, Feb. 2002.
[5]
D. Cui, S. Hsu, and D. Pavlidis, ¡§DC
and high frequency characterization of Metalorganic Chemical Vapor
Deposition (MOCVD) grown
InP/InGaAs PNP
heterojunction bipolar transistor,¡¨ Jpn. Journal of . Appl. Phys.
Vol. 41, no. 2B, pp. 1143-1149, Feb, 2002.
[6]
D. Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin, and T. Block, ¡§First
demonstration of monolithic InP-based HBT amplifier with PNP active
load,¡¨ IEEE Electron Device Letters, vol. 23, no. 3, pp.
114-117, Mar. 2002.
[7]
D. Cui, D. Pavlidis, S. Hsu, and A. Eisenbach, ¡§Comparison
of DC, high-frequency performance of zinc-doped and carbon-doped
InP/InGaAs HBTs grown by metalorganic chemical vapor deposition,¡¨
IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 725-732, May,
2002.
[8]
S. Hsu, D. Pavlidis, and D. Sawdai, ¡§Low-frequency
noise characteristics of PNP InAlAs/InGaAs HBTs,¡¨ IEEE Electron
Device Letters, vol.
23, no. 12, pp. 688-690, Dec. 2002.
[9]
S. Hsu and D. Pavlidis, ¡§A
comparison of low-frequency noise characteristics and noise origins in InP-based
NPN and PNP heterojunciton
bipolar transistors,¡¨ IEEE Trans. Electron Devices, vol. 50,
no. 9, pp. 1974-1982, Sep. 2003.
[10] J. A. Yeh, C. A. Chang, C. -C. Cheng, J. -Y. Huang, and S. Hsu, ¡§Microwave
characteristics of liquid crystal tunable capacitors,¡¨ IEEE
Electron Device Lett., vol. 26, pp. 451-453, July 2005.
[11] S. Hsu, H. Zhu, ¡§W-band
multiple-ring resonator by standard 0.18-um CMOS technology,¡¨ IEEE
Microwave and Wireless Component
Lett., pp. 832-834, Dec. 2005.
[12] J. Jin, S. Hsu, M. T. Yang, and S. Liu, ¡§Low-loss
differential semi-coaxial interconnects in CMOS process,¡¨ IEEE
Trans. Microwave
Theory Tech., vol. 54, no.
12, pp. 4333-4340, Dec. 2006.
[13] Y. Lin, S. Hsu, J. Jin, and C. Chan, ¡§A
3.1¡V10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused
technique,¡¨ IEEE
Microwave and Wireless Component Letters, vol. 17, No. 3, Mar.
2007.
[14] T. Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M. Hong, ¡§Interfacial
trap characteristics in depletion mode GaAs MOSFET¡¦s,¡¨
Journal of
Crystal Growth, Vol. 301-302, April 2007, pp. 1009-1012.
[15] C. Chan, T. Lee, S. Hsu, L. Chen, and Y. Lin, ¡§Impacts
of gate recess and passivation on AlGaN/GaN HEMTs,¡¨ Jpn. Journal of
. Appl.
Physics,
Vol. 46, No. 2, pp. 478-484, Feb. 2007
[16] Y. Lin, S. Koa, C. Chan, S. Hsu, H. Lee, and S. Gwo, "High
current density InN/AlN heterojunction field-effect transistor with a SiNx
gate
dielectric layer,"
Applied Physics Letters
90,
142111, 2007
[17] H. Lin, S. Hsu, C. Chan, and Y. Lin, ¡§A wide locking-range frequency
divider for LMDS applications,¡¨ IEEE Trans. Circuits
and Systems II,
Vol. 54, No. 9, pp. 750-754, Sep. 2007.
[18] C. Chan, Y. Lin, J. Jin, S. Hsu, Y. Huang, and Y. Juang, ¡§Impact
of STI effect on flicker noise in 0.13-µm RF N-MOSFETs,¡¨ IEEE
Trans.
Electron Devices, Vol. 54,
No. 12, pp. 3383-3392, Dec., 2007.
[19] J. Jin and S. Hsu, ¡§A 0.18-£gm CMOS
balanced amplifier for 24-GHz applications,¡¨ IEEE J. Solid-State Circuits,
vol. 43, no. 2, pp. 440-445,
Feb. 2008.
[20] J. Jin and S. Hsu, ¡§A 1-V, 45-GHz balanced amplifier with 21.5-dB gain
using 0.18-£gm CMOS technology,¡¨ IEEE Trans. Microwave Theory
Tech., vol. 56, no. 3, pp. 599-603, March 2008.
[21] J. Jin, S. Hsu, T. Yeh, M. Yang, and S. Liu,
¡§Fully analytical
modeling of Cu interconnects up to 110 GHz,¡¨ Jpn. Journal of Appl. Physics,
vol. 47, no. 4, pp. 2473-2476, Apr. 2008.
[22] J. Jin and S. Hsu, ¡§A 40-Gb/s transimpedance amplifier in 0.18-µm
CMOS technology,¡¨ IEEE J. Solid-State Circuits, vol. 43, no. 6,
pp.
1449-1457, June, 2008.
[23] C. Chan, Y. Huang, J. Chen, S. Hsu, and Y. Juang,
"STI-to-gate
distance effects on flicker noise characteristics in 0.13-µm CMOS,"
J. Solid-State Electronics,
vol. 52, pp. 1182-1187, 2008.
[24] C. Chan, S. Chen, M. Tsai, and S. Hsu,
"Wiring effect optimization in
65-nm low-power NMOS," IEEE Electron Device Letters,
vol. 29,
no. 11, pp. 1245-1248, Nov. 2008.
[25] J. Jin and S. Hsu,
"A miniaturized 70-GHz broadband amplifier in
0.13-µm CMOS technology," IEEE Trans. Microwave Theory Tech.,
vol.
56, no. 12, pp. 3086-3092, Dec. 2008.
[26] J. Jin and S. Hsu,
"A 75-dB£[ 10-Gb/s transimpedance amplifier in
0.18-£gm CMOS technology," IEEE Photon. Tech. Lett.,
vol.
20, no. 24,
pp.
2177-2179, Dec. 2008.
[27] Y. Wei, S. Hsu, and J. Jin,
"A low-power low-noise amplifier for
K-band applications," IEEE Microwave and Wireless Component
Lett.,
vol. 19, no. 2, pp. 116-118, Feb. 2009.
[28] Y. Wu, S. Hsu, K. Tan, and Y. Su,
"Substrate noise
coupling reduction
in LC voltage-controlled oscillators," IEEE Electron Device
Letters,
vol. 30, no. 4, pp. 383-385, Apr. 2009.
[29] M. Kao, J. Wu, C Lin, F. Chen, C. Chiu, and S. Hsu,
¡§A 10-Gb/s CML I/O
circuit for backplane interconnection in 0.18-£gm CMOS technology,"
IEEE Trans. VLSI Systems,
vol. 17, no. 5, pp. 688-696, May 2009.
[30] J. Jin and S. Hsu, ¡§A K-band low-noise amplifier in 0.18-£gm CMOS
technology for sub-1-V operation,¡¨ accepted for Microwave Optical
Technology Letters.
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[1]
S. Hsu, B. Bayraktaroglu and D. Pavlidis, ¡§Comparison
of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for
microwave power
applications,¡¨ Topical Workshop on Heterostructure Microelectronics
for Information Systems Applications,
Kanagawa, Japan, Aug. 30-Sep. 2, pp. S3-6, 1998.
[2]
S. Hsu, D. Sawdai, and D. Pavlidis, ¡§Modeling of highly-nonlinear HBT
characteristics using a distributed thermal subcircuit derived from
pulsed measurements,¡¨ 53rd ARFTG conference (MTT Symposium) Digest,
Anaheim, CA, USA, Jun. 17-18, pp.139-145, 1999.
[3]
S. Hsu, P.N. Tan, D. Pavlidis, E. Alekseev, N.X. Nguyen, C. Nguyen, and
D.E. Grider, ¡§Frequency
dependent output resistance and
transconductance in ALGaN/GaN MODFETs,¡¨ Proceeding of 1999
International Semiconductor Device Research Symposium (ISDRS),
Charlottesville, Virginia, pp. 315-317, Dec., 1999.
[4] D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis,
and S. Hsu, ¡§Hole
impact ionization coefficient in (100)-oriented
In0.53Ga0.47As,¡¨
12th IEEE Indium Phosphide and Related Materials (IPRM¡¦00),
Williamsburg, VA, May 15-19, pp. 258-261, 2000.
[5] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T. Block, ¡§High
power performance using InAlAs/InGaAs single HBTs,¡§12th IEEE
Indium Phosphide and
Related Materials (IPRM¡¦00), Williamsburg, VA, May 15-19, pp. 473-476,
2000.
[6] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, P. Chin and T. Block, ¡§Low
DC power, high gain-bandwidth product, coplanar Darlington feedback
amplifiers using InAlAs/InGaAs heterojunction bipolar transistors¡¨,
22nd IEEE GaAs IC Symposium, pp.259-262, 2000.
[7] E. Alekseev, S. Hsu and D. Pavlidis, ¡§Broadband
AlGaN/GaN HEMT MMIC attenuators with high dynamic range,¡¨
Proceeding of 30th
European microwave conference, 2000.
[8] D. Cui, S. Hsu and D. Pavlidis, ¡§First
InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition¡¨,
13th IEEE Int. Conf.
Indium Phosphide and Related materials, Nara, Japan, pp. 224-227, May
2001.
[9] S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic, C. Nguyen, D. Grider,
¡§High frequency noise studies in AlGaN/GaN MODFETs,¡¨ WOCSDICE
2001, Cagliari, Italy, May
25-30, 2001.
[10] S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, ¡§Low
noise, high-speed InP/InGaAs HBTs,¡¨ 23rd IEEE GaAs IC Symposium
, pp. 188-191,
2001.
[11] S. Hsu, D. Pavlidis, J. Moon, M. Micovic, C. Nguyen, and D. Grider, ¡§Low
noise AlGaN/GaN MODFETs with high breakdown and power
characteristics,¡¨ 23rd IEEE GaAs IC Symposium, pp. 229-232,
2001.
[12] D. Cui, D. Pavlidis, S. Hsu, D. Sawdai, P. Chin and T. Block,
¡§InP-based complementary HBT push-pull MMICs,¡¨ proceeding of 26th
Workshop on Compound Semiconductor Devices and Integrated Circuits in
Europe (WOCSDICE), 2002.
[13] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain,
¡§Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and
study of their origins,¡¨ proceeding of 26th Workshop on Compound
Semiconductor Devices and Integrated Circuits in Europe
(WOCSDICE) 2002.
[14] S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong
and T. Hussain, ¡§Study
on large-signal linearity and efficiency of
AlGaN/GaN MODFETs,¡¨ proceeding of 31st European microwave
conference, 2002.
[15] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain,
¡§Gate
and drain low-frequency noise models of AlGaN/GaN
MODFETs,¡¨ proceeding of IEEE Lester Eastman conference, 2002.
[16] S. Hsu, P. Valizadeh, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong
and T. Hussain, ¡§Impacts
of RF stress on dispersion effects and
power characteristics for AlGaN/GaN HEMTs,¡¨ proceeding of 24th IEEE
GaAs IC Symposium, pp. 85-88, 2002.
[17] D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh ¡¨GaN Device and
Material Considerations: A Tutorial and General Discussion¡¨
2002 GaAs REL Workshop, Monterey,
California, October 2002.
[18] X. Zhu, S. Hsu and D. Pavlidis, ¡§First microwave characteristics of
InGaAlAs/GaAsSb/InP double HBTs,¡¨ Topical Workshop on
Heterostructure Microelectronics for Information Systems Applications,
Okinawa, Japan, pp. 18-19, Jan., 2003.
[19] S. Hsu, D. Pavlidis, ¡§Analysis
and modeling of dispersion characteristics in AlGaN/GaN MODFETs,¡¨
proceeding of 25th IEEE GaAs IC
Symposium, Nov. 2003, pp.
119-122.
[20] D. Pavlidis, S. M. Hubbard, S. Hsu and S. Seo ¡¨AlGaN/GaN and AlN/GaN
Heterostructure Devices: A Possible Device Technology for
High RF Power Wireless Transmission¡¨ 2003
Japan-United States Joint Workshop on Space Solar Power System (JUSPS'03),
July 3-4, 2003, Kyoto, Japan
[21] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, ¡§First
demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP
DHBTs,¡¨
IEEE MTT-S Digest, pp. 101-103, June, 2005.
[22] C.-T. Chiu, J.-M. Wu, S. Hsu, M.-S. Kao, C.-H. Jen, and Y.-S. Hsu, ¡§A
10Gb/s wide-band current-mode logic I/O interface for high-speed
interconnect in 0.18-um
CMOS technology," IEEE Int. SOC Conf., pp. 257-260, Sep. 2005.
[23] D. Pavlidis, P. Valizadeh, and S. Hsu, ¡§AlGaN/GaN high electron
mobility transistor (HEMT) reliability,¡¨ European microwave conf.,
Paris,
Oct. 2005.
[24] L. Fan, W. Huang, C. Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu, A. Jin,
K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien, A. Yeh,
J. Chen, W. Wu, and C. Lai, ¡§Magnetic
resonance Microsystems for life science applications,¡¨ Proc. of
Transducers 2005, pp.1998-
2001, Seoul, Korea, June 2005.
[25] C. Hsiao, M. Kao, C. Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu and
Y. Hsu, ¡§3.2
Gbit/s CML transmitter with 20:1 multiplexer in 0.18
um CMOS
technology, ¡§IEEE Int. Conf. Mixed Design of Integrated Circuits
and Systems, pp. 179-183, 2006.
[26] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu ¡§InP/GaAsSb/InP DHBT
technology and its application to MM-wave integrated oscillators,¡¨
proceeding of 30th Workshop on Compound Semiconductor Devices and
Integrated Circuits in Europe (WOCSDICE) 2006.
[27] J. Jin, S. Hsu, M. Yang, and S. Liu, ¡§Low-loss
single and differential semi-coaxial interconnects in standard CMOS
process,¡¨ IEEE MTT-S
Int. Microwave Symp. Dig., pp. 420-423, June 2006.
[28] J. Jin and S. Hsu, ¡§40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,¡¨ European
Solid-state Circuit Conference
(ESSCIRC), pp. 520-523, Sep. 2006.
[29] C. Chan, J. Jin, Y. Lin, S. Hsu, and Y. Juang, ¡§STI
Effect on Flicker Noise in 0.13-µm RF NMOS,¡¨ European Solid-state
Device
Conference (ESSDERC ), pp.101-104, 2006.
[30] C. Chan, P. Tsai, T. Lee, S. Hsu, J. Kwo, and M. Hong, ¡§Flicker
noise characteristics in GaAs MOSFETs,¡¨ MBE conference,
September
2006.
[31] L. Fan, S. Hsu, J. Jin, C. Hsieh, W. Lin, H. Hao, H. Cheng, K. Hsueh,
and C. Lee,¡§Miniaturization
of magnetic resonance microsystem
components for 3D cell
imaging,¡¨ IEEE Int. Solid-State Circuit Conf. (ISSCC), San
Francisco, pp. 166-168, Feb. 2007.
[32] C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y.
Juang, "Edge-extended
design for improved flicker noise characteristics in 0.13-um RF
NMOS,"
IEEE MTT-S Int. Microwave Symp., Hawaii, June 2007, pp. 441-444.
[33] S. Wang, Y. Wu, S. Hsu, and C. Chan, "Substrate
coupling effect under various noise injection topologies in LC-voltage
controlled
oscillator,"
IEEE RFIC Symp., Hawaii, June 2007, pp. 705-708.
[34] Y. Hsu, M. Kao, H. Tzeng, C. Chiu, J. Wu,
and S. Hsu,
¡§A 20Gbps scalable load balanced Birkhoff-von Neumann
symmetric TDM switch
IC with SERDES interfaces,¡¨ IEEE proceedings of the 12th Asia and South Pacific
Design Automation Conference, pp. 23-26, Yokohama,
Japan,
2007.
[35] C. Chiu, Y. Hsu, M. Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F.
Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu,
¡§A scalable load balanced
Birkhoff-von
Neumann symmetric TDM switch IC for high-speed networking applications,¡¨
IEEE International Symposium on Circuits and
Systems,
pp. 2754-2757, New Orleans, USA, 2007.
[36] Y. Lin, T. Lee, Y. Wang, and S. Hsu,
¡§Layout optimization of AlGaN/GaN HEMTs for high-power applications,¡¨
2007 International Conference
on
Solid State Devices and Materials, Sep. 2007.
[37] J. Jin, S. Hsu, T. Yeh, M. Yang, S. Liu,
¡§Fully analytical modeling of Cu interconnects up to 110 GHz,¡¨ 2007
International Conference
on Solid State Devices and Materials,
Sept. 2007, pp. 908-909.
[38] J. Jin and S. Hsu, ¡§Wideband CMOS
transimpedance amplifier design using transformer-peaking technique,¡¨
2007 International Conference
on Solid State Devices and Materials,
Sept. 2007, pp. 492-493.
[39] J. Jin and S. Hsu,
"A 70-GHz
transformer-peaking broadband amplifier in 0.13-£gm CMOS technology,"
MTT-S Int.
Microwave Symp., Atlanta,
pp.
285-288, June, 2008.
[40] Y. Lin, J. Wu, S. Hsu, C. Chan, and Y.
Lian, "GaN-based Schottky varactors for high-power RF applications," 2008
International
Conference on Solid State Devices and Materials, Sept. 2008.
[41] S. Hsu, "Design techniques for CMOS
broadband amplifiers," CMOS Emerging Technologies Workshops
(invited), Feb. 2009. |
