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[1] M. K. Chaubey,
Y. Liu, Y. Chang, P. Wu, H. Tsai, and S. Hsu*, “Ultracompact
inductorless noise-canceling LNAs in 40-nm CMOS achieving 2.2-K noise
temperature for qubit readout,” accepted for IEEE Trans. Microwave
Theory Techn., Jan. 2024 (early
access).
[2] J. Wang, Y. Huang, Y. Chang, Y. Liu, D.
Chang, and S. Hsu*, ”A K-band MMIC
cross-coupled oscillator with high output power in 0.25-mm GaN HEMT,” IEEE Microwave and Wireless Technology Lett., vol. 33, no. 8,
pp. 1211-1214, Aug. 2023.
[3] S. Hong and S. Hsu*, “An inductorless
20-Gbaud overshoot suppression modulator driver using interleave frequency
variant feedback in 90nm CMOS,” IEEE
Trans. Microwave Theory Techn.,
vol. 71, no. 3, pp. 1044-1054, March 2023.
[4] C. Lin, S. Hong, and S. Hsu*, “A
40-Gb/s modulator driver using cascade swing compensation in 90 nm CMOS,“ IEEE
Microwave and
Wireless Components Lett., vol. 32, no. 9, pp. 1103-1106, Sept. 2022.
[5] S. D. Joseph, Y. Huang*, S. Hsu*, A. Alieldin, and C. Song, “ Second harmonic exploitation for
high-efficiency wireless power transfer using duplexing rectenna,” IEEE Trans. Microwave Theory Techn.,
vol. 69, no. 1, pp. 482-494, Jan.
2021.
[6] S. D. Joseph, Yi Huang*, and S. H. Hsu*, “Transmission
lines-based impedance matching technique for broadband rectifier,” IEEE Access, vol. 8, pp. 4665-4672,
Dec. 2020.
[7] S. D. Joseph, S. Hsu*, A. Alieldin, C. Song, Y. Liu, and Y. Huang*, “High-power
wire bonded GaN rectifier for wireless power transmission,” IEEE Access, vol. 9, pp.
82035-82041, Apr. 2020.
[8] Y. Liu, C. Li, W. Hsu, C. Chuang, J. Liu,
and S. Hsu, “High-frequency
AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates,” Jpn. Journal of Applied Physics, 59,
SGGD11, Feb. 2020.
[9] H. Wang, C-H Li, Y. Liu, S. D. Joseph, Y.
Huang, and S. Hsu, “Low
turn-on voltage and high breakdown GaN Schottky barrier diodes for RF
energy harvesting applications,” Jpn. Journal of Applied Physics, 59, SGGD12, Feb. 2020.
[10] S. Li, S. Hsu*, K. Chen, C. Lin, S. Chen,
J. Zhang, and P. Tzeng, “Fully
symmetric 3-D transformers with through-silicon via IPD technology for RF
applications,” IEEE Trans. Compon. Packag. manuf.
Technology, vol. 9, no. 11, Nov. 2019.
[11] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “A low-loss fully
integrated CMOS active probe for gigahertz conducted EMI test,” IEEE Trans. Microwave Theory Techn.,
vol. 67, no. 4, pp. 1652-1660, Apr. 2019.
[12] S. Li, S. Hsu*, J. Zhang, and K. Huang, “Design of
a compact GaN MMIC Doherty power amplifier and system level analysis With X-Parameters for 5G communications,” IEEE Trans. Microwave Theory Techn.,
vol. 66, no. 12, pp. 5676-5684, Dec. 2018.
[13] J. Liu and S. Hsu*, “A miniature
300-MHz resonant DC-DC converter with GaN and CMOS integrated in IPD
technology,” IEEE Trans. Power
Electronics, vol. 33, no. 11, pp. 9656-9668, Nov. 2018.
[14] P. Wang, G. Su,
Y. Chang, D. Chang, and S. Hsu*, “A
transformer-based current-reuse QVCO with an FoM up to -200.5 dBc/Hz,” IEEE Trans. Circuits and Systems II, vol.
65, no. 6, pp. 749-753, June 2018.
[15] Y. Li, P. Chiu, K. Li, D. Thomson, G.
Reed, and S. Hsu*, “A 40-Gb/s
4-Vpp differential modulator driver in 90 nm CMOS,” IEEE Microwave and
Wireless Components Lett., vol. 28, no. 1,
pp. 73-75, Jan. 2018.
[16] Y. Lin and S. Hsu*, “A Sierpinski
space-filling clock tree using multiply-by-3 fractal-coupled ring
oscillators,” IEEE J. Solid-State
Circuits, vol. 52, no.
11, pp. 2947-2962, Nov. 2017.
[17] Y. Chang, P. Wang, D. Chang, and S. Hsu*, “Wideband
conducted electromagnetic emission measurements using IPD chip probes,”
IEEE Trans. Microwave Theory Techn.,
vol. 64, no. 11, pp. 4063-4070, Nov. 2016.
[18] C. Tsou, H. Kang, Y. Lian, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for RF applications,”
IEEE Trans. Electron Devices, vol.
63, no. 11, pp. 4218-4225, Nov. 2016.
[19] C. Tsou, K. Wei, Y. Lian, and S. Hsu*, “2.07-kV AlGaN/GaN
Schottky barrier diodes on silicon with high Baliga’s figure-of-merit,” IEEE Electron Device
Letters., vol. 37, no. 1, pp.
70-73, Jan. 2016.
[20] C.
Lee, H. Hsieh, and S. Hsu*, “A low-power
miniature 20-Gb/s passive/active hybrid equalizer in 90nm CMOS,” IEEE Microwave and Wireless Components Lett., vol. 25, no. 10, pp. 669-671, Oct. 2015.
[21] C.
Tsou, C. Lin, Y. Lian, and S. Hsu*, “101-GHz InAlN/GaN
HEMTs on silicon with high Johnson’s figure-of-merit,” IEEE Trans. Electron Devices, vol.
62, no. 8, pp. 2675-2678, Aug. 2015.
[22] K.
Tan, T. Chu, and S. Hsu*, “A
76.2-89.1 GHz phase-locked loop with 15.6% tuning range in 90nm CMOS for
W-band applications,” IEEE Microwave and
Wireless Components Lett., vol. 25, no.
8, pp. 538-540, Aug. 2015.
[23] K.
Tan, A. Lo, T. Chu, and S. Hsu*, “A K-band
reconfigurable pulse-compression automotive radar transmitter in 90 nm
CMOS,” IEEE Trans. Microw. Theory Techn.,
vol. 63, no. 4, pp. 1380-1387, Apr. 2015.
[24] Y.
Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “Drain
E-field manipulation in AlGaN/GaN HEMTs by Schottky extension technology,”
IEEE Trans. Electron Devices,
vol. 62, no. 2, pp. 519-524, Feb. 2015.
[25] F.
Chen, M. Kao, Y. Hsu, J. Wu, C. Chiu, S. Hsu, and M. F. Chang, “A 10-Gb/s low jitter single-loop
clock and data recovery circuit with rotational phase frequency detector,”
IEEE Trans. Circuits and Systems I
(TCAS I), vol. 61, no. 11, Nov. 2014.
[26] G.
Reed, G. Z. Mashanovich, F. Y. Gardes, M. Nedeljkovic, Y.
Hu, D. J. Thomson, K. Li, P. Wilson, S. Chen, and S. Hsu, “Recent
breakthroughs in carrier depletion based silicon optical modulators,” Nanophotonics,
vol. 3, issue 4-5, pp. 229-245, Aug. 2014.
[27] C.
Yeh, Y. Lain, Y. Chiu, C. Liao, D. Moyano, S.
Hsu, and P. Chiu, “Gigahertz
flexible graphene transistors for microwave integrated circuits,” ACS
nano, 2014, 8(8), pp. 7663-7670, July 2014 (2014 impact factor: 12.033)
[28] S.
Huang, J. Wang, C. Lan, S. Hsu*, S. Li, P. Tseng, C. Lin, and S. Sheu, “An
ultra compact millimeter-wave VCO in 3D IC technology,” IEEE Microwave
and Wireless Components Lett, vol. 24, no.
4, Arp. 2014.
[29] C.
Hsiao, T. Su, and S. Hsu*, “CMOS
distributed amplifiers using gate-drain transformer feedback technique,”
IEEE Trans. Microwave Theory Tech.,
vol. 61, no. 8, pp. 2901-2910, Aug. 2013.
[30] Y.
Lian, Y. Lin, J. Yang, C. Cheng, and S. Hsu*, “AlGaN/GaN Schottky
barrier diodes on silicon substrates with selective Si diffusion for low
onset voltage and high reverse blocking,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 981-983, Aug.
2013.
[31] C.
Hsieh, J. Hwang, T. Chang, J. Li, S. Chen, L. Mao, L. Tsai, Y. Chueh, P. Lyu, and S. Hsu, “Enhanced
mobility of organic thin film transistors by water absorption of collagen
hydrolysate gate dielectric,”
Applied Physics Lett. 103, 023303 (2013)
[32] Y.
Hsu, Y. Lin, C. Chiu, J. Wu, S. Hsu, F. Chen, M. Kao, W. Lai, and Y. Hsu, “A
low propagation delay load balanced 4 x 4 switch fabric IC in 0.13 mm CMOS technology,” IEEE Trans. VLSI, vol. 21, no. 8,
pp. 1481-1495, Aug. 2013.
[33] Y.
Lin, Y. Lian, J. Yang, H. Lu, Y. Huang, C. Cheng, and S. Hsu*, “Contact
engineering of GaN-on-silicon power devices for breakdown voltage
enhancement,” Semiconductor
Science and Technology, vol. 28, 074018, July 2013. (invited)
[34] L.
Mao, J. Hwang, T. Chang, C. Hsieh, L. Tsai, Y. Chueh,
S. Hsu, P. Lyu, and T. Liu, “Pentacene
organic thin-film transistors with solution-based gelatin dielectric,” Organic
Electronics, vol. 14, issue 4, pp. 1170-1176, Apr. 2013.
[35] M.
Tsai, S. Huang, and S. Hsu, “ESD
protection design for V-band low-noise amplifier using RF junction
varactors,” Jpn. Journal of Applied Physics,
04CE09, 1-6, March 2013.
[36] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “Design of
60-GHz low-noise amplifiers with low NF and robust ESD protection in 65-nm
CMOS,” IEEE Trans. Microwave
Theory Tech., vol. 61, no. 1, pp. 553-561, Jan. 2013.
[37] W.
Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel low gate-count pipeline
topology with multiplexer-flip-flops for serial link,” IEEE Trans. Circuits and Systems I (TCAS
I), vol. 59, no. 11, pp. 2600-2610, Nov. 2012.
[38] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, and T. Yeh, “A 17.5-26
GHz low-noise amplifier with over 8-KV ESD protection in 65-nm CMOS,” IEEE Microwave
and Wireless Component Lett. vol. 22, no. 9, pp. 483-485,
Sep. 2012.
[39] Y. Lian, Y. Lin, H. Lu, Y. Huang, and S. Hsu*, “AlGaN/GaN
HEMTs on silicon with hybrid Schottky-Ohmic drain for high breakdown
voltage and low leakage current,” IEEE
Electron Device Letters, vol. 33, no. 7, pp. 973-975, July 2012.
[40] P. Chang, S. Su, S.
Hsu*, W. Cho, and J. Jin, “An
ultra-low-power transformer-Feedback 60 GHz low-noise amplifier in 90 nm
CMOS,” IEEE
Microwave and Wireless Component Lett. vol. 22,
no. 4, pp. 197-199, Apr.
2012.
[41] M.
Tsai and S. Hsu*, “A
V-Band Low-Noise Amplifier Co-Designed with ESD Network in 65-nm RF CMOS,”
Microwave Optical Technology Letters,
vol. 54, no. 3, pp. 820-822,
March 2012.
[42] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou, “ESD-protected
K-band low-noise amplifiers using RF junction varactors in 65-nm CMOS,”
IEEE Trans. Microwave Theory Tech., vol. 59, no. 12, pp. 3455-3462, Dec.
2011.
[43] C. Hsiao, S. Hsu*, and D. Chang, “A compact V-band
bandpass filter in IPD technology,” IEEE
Microwave and Wireless Component Lett. vol. 21, no. 10, pp. 531-533,
Oct. 2011.
[44] M. Tsai and S. Hsu* “A
24-GHz low-noise amplifier using RF junction varactors for noise
optimization and CDM ESD protection in 90-nm
CMOS,” IEEE Microwave and
Wireless Component Lett., vol. 21, no. 7, pp. 374-376, July 2011.
[45] W. Cho and S. Hsu*, “An
ultra-low-power 24 GHz low-noise amplifier using 0.13 μm CMOS technology,”
IEEE Microwave and Wireless Component Lett., vol.
20, no. 12, pp. 681-683, Dec. 2010.
[46] M.
Tsai, S. Hsu*, F. Hsueh, and C. Jou , "A multi-ESD-path
low-noise amplifier with a 4.3-A TLP current level in 65-nm CMOS,"
IEEE Trans. Microwave Theory Tech., vol. 58, no. 12, pp. 4004-4011, Dec.
2010.
[47] P. Chang and S. Hsu*, "A
compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-μm
CMOS," IEEE Trans.
Microwave Theory Tech., vol. 58, no. 10, pp. 2575-2581, Oct. 2010.
[48] W. Chang, K. Tan, and S. Hsu*, "A 56.5-72.2
GHz transformer-injection Miller frequency divider in 0.13 μm CMOS,"
IEEE Microwave and Wireless Component Letters, vol. 20, no. 7, pp. 393-395, July,
2010.
[49] T. Lin, P. Chang, H. chiu, M. Hong, J. Kwo, Y.
Lin, and S. Hsu, "DC
and RF characteristics of self-aligned inversion-channel In0.53Ga0.47As
MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3)
as gate dielectrics," J.
Vacuum Science and Technology B, 28(3),
May/Jun, C3H14 (2010).
[50] Y. Chang, W. Chang, Y. H. Chang, J. Kwo, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, "Drain
current enhancement and negligible current collapse in GaN MOSFETs with
atomic-layer-deposited HfO2 as a gate dielectric," J. Microelectronic Engineering, 87(2010) 2042-2045.
[51] Y. Lin, Y. Lian, and S. Hsu*, "AlGaN/GaN
HEMTs with low leakage current and high on/off current ratio," IEEE Electron Device Letters, vol. 31, no. 2, pp. 102-104, Feb.
2010.
[52] Y. Lin, J. Wu, C. Chan, S. Hsu*, C.
Huang, and T. Lee, “Square-gate
AlGaN/GaN HEMTs with improved trap-related characteristics,” IEEE Trans. Electron Devices,
vol 56, no. 12, pp. 3207-3211, Dec. 2009.
[53] M. Tsai, S. Hsu*, F. Hsueh, C. Jou, S. Chen, and M. Song, “A wideband low noise
amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS,” IEEE Microwave and Wireless
Component Letters, vol. 19, no. 11, pp. 734-736, Nov. 2009.
[54] J. Jin and
S. Hsu*, “A K-band low-noise
amplifier in 0.18-μm CMOS technology for sub-1-V operation,” Microwave
Optical
Technology Letters, vol. 51, no. 9, pp. 2202-2204, 2009.
[55] M. Kao, J. Wu, C Lin, F. Chen, C.
Chiu, and S. Hsu, “A 10-Gb/s
CML I/O circuit for backplane interconnection in 0.18-μm CMOS technology,”
IEEE Trans. VLSI Systems, vol. 17, no. 5, pp. 688-696,
May 2009.
[56] Y. Wu, S. Hsu*, K. Tan, and Y. Su, "Substrate noise
coupling reduction in LC voltage-controlled oscillators," IEEE
Electron Device Letters, vol. 30, no. 4, pp. 383-385, Apr. 2009.
[57] Y. Wei, S. Hsu*, and J. Jin, "A
low-power low-noise amplifier for K-band applications," IEEE
Microwave and Wireless Component Lett., vol. 19, no. 2, pp. 116-118, Feb. 2009.
[58] J. Jin and
S. Hsu*, "A
75-dBΩ 10-Gb/s transimpedance amplifier in 0.18-μm CMOS technology,"
IEEE Photon. Tech. Lett., vol. 20, no. 24, pp. 2177-2179, Dec. 2008.
[59] J. Jin and
S. Hsu*, "A
miniaturized 70-GHz broadband amplifier in 0.13-µm CMOS technology," IEEE
Trans. Microwave Theory Tech., vol. 56, no. 12, pp. 3086-3092, Dec.
2008.
[60] C. Chan, S. Chen, M. Tsai, and S.
Hsu*, "Wiring effect
optimization in 65-nm low-power NMOS," IEEE Electron
Device Letters, vol. 29, no. 11, pp. 1245-1248, Nov. 2008.
[61] C. Chan, Y. Huang, J. Chen, S. Hsu*,
and Y. Juang, "STI-to-gate
distance effects on flicker noise characteristics in 0.13-µm CMOS," J. Solid-State Electronics, vol. 52, pp. 1182-1187, 2008.
[62] J. Jin and
S. Hsu*, “A 40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,” IEEE J.
Solid-State Circuits, vol. 43, no. 6, pp. 1449-1457, June, 2008.
[63] J. Jin, S.
Hsu*, T. Yeh, M. Yang, and S. Liu, “Fully analytical
modeling of Cu interconnects up to 110 GHz,” Jpn.
Journal of Appl. Physics, vol. 47, no. 4, pp. 2473-2476, Apr. 2008.
[64] J. Jin and
S. Hsu*, “A 1-V, 45-GHz
balanced amplifier with 21.5-dB gain using 0.18-μm CMOS technology,” IEEE
Trans. Microwave Theory Tech., vol. 56, no. 3, pp. 599-603, March
2008.
[65] J. Jin and
S. Hsu*, “A 0.18-μm CMOS
balanced amplifier for 24-GHz applications,” IEEE J. Solid-State
Circuits, vol. 43, no. 2, pp. 440-445, Feb. 2008.
[66] C. Chan, Y. Lin, J. Jin, S. Hsu*, Y. Huang, and Y. Juang,
“Impact
of STI effect on flicker noise in 0.13-µm RF N-MOSFETs,” IEEE Trans.
Electron Devices, Vol. 54, No.
12, pp. 3383-3392, Dec., 2007.
[67] H. Lin, S. Hsu*, C. Chan, and Y. Lin,
“A wide locking-range
frequency divider for LMDS applications,” IEEE Trans. Circuits
and Systems II, Vol. 54, No. 9, pp. 750-754, Sep. 2007.
[68] Y. Lin, S. Koa, C. Chan, S. Hsu*, H.
Lee, and S. Gwo, "High current density
InN/AlN heterojunction field-effect transistor with a SiNx gate
dielectric layer," Applied Physics Letters 90, 142111, 2007.
[69] C. Chan, T. Lee, S. Hsu*, L. Chen,
and Y. Lin, “Impacts
of gate recess and passivation on AlGaN/GaN HEMTs,” Jpn.
Journal of Appl. Physics, Vol. 46, No. 2,
pp. 478-484, Feb. 2007.
[70] T. Lee, C. Chan, P. Tsai, S. Hsu, J. Kwo, and M. Hong, “Interfacial trap
characteristics in depletion mode GaAs MOSFET’s,” Journal of Crystal Growth,
Vol. 301-302, April 2007, pp. 1009-1012.
[71] Y. Lin, S. Hsu*, J. Jin, and C. Chan, “A
3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused
technique,” IEEE Microwave and Wireless Component
Letters, vol. 17, No. 3, Mar. 2007.
[72] J. Jin, S.
Hsu*, M. T. Yang, and S. Liu, “Low-loss
differential semi-coaxial interconnects in CMOS process,” IEEE Trans.
Microwave Theory Tech., vol. 54, no. 12, pp. 4333-4340,
Dec. 2006.
[73] S. Hsu*, H. Zhu, “W-band
multiple-ring resonator by standard 0.18-um CMOS technology,” IEEE
Microwave and Wireless
Component Lett., pp. 832-834, Dec. 2005.
[74] J. A. Yeh, C. A. Chang, C. -C. Cheng,
J. -Y. Huang, and S. Hsu, “Microwave
characteristics of liquid crystal tunable capacitors,” IEEE Electron Device Lett., vol. 26, pp.
451-453, July 2005.
[75] S. Hsu and D. Pavlidis,
“A
comparison of low-frequency noise characteristics and noise origins in
InP-based NPN and PNP heterojunciton bipolar transistors,” IEEE Trans. Electron Devices, vol.
50, no. 9, pp. 1974-1982, Sep. 2003.
[76] S. Hsu, D. Pavlidis,
and D. Sawdai, “Low-frequency
noise characteristics of PNP InAlAs/InGaAs HBTs,” IEEE Electron
Device Letters, vol. 23, no. 12, pp.
688-690, Dec. 2002.
[77] D. Cui, D. Pavlidis,
S. Hsu, and A. Eisenbach, “Comparison
of DC, high-frequency performance of zinc-doped and carbon-doped InP/InGaAs
HBTs grown by metalorganic chemical vapor deposition,” IEEE Trans.
Electron Devices, vol. 49, no. 5, pp. 725-732, May, 2002.
[78] D. Cui, D. Pavlidis,
S. Hsu, D. Sawdai, P. Chin, and T. Block, “First
demonstration of monolithic InP-based HBT amplifier with PNP active load,”
IEEE Electron Device Letters, vol. 23, no. 3, pp. 114-117, Mar.
2002.
[79] D. Cui, S. Hsu, and D. Pavlidis, “DC
and high frequency characterization of Metalorganic Chemical Vapor
Deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor,”
Jpn. J. of Appl. Phys. Vol. 41, no.
2B, pp. 1143-1149, Feb, 2002.
[80] D. Cui, S. Hsu and D. Pavlidis, “Ka-band
oscillators using InP-based HBTs,” J.
of Solid-State Electronics, vol. 46, no. 2, pp. 249-253, Feb. 2002.
[81] D. Buttari,
A. Chini, G. Meneghesso,
E. Zanoni, D. Sawdai,
D. Pavlidis, and S. Hsu “Measurements
of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp
HBTs,” IEEE Electron Device Letters, vol. 22, no. 5, pp.
197-199, May. 2001.
[82] D. Sawdai,
K. Yang, S. Hsu, D. Pavlidis, and G. Haddad, “Power
performance of InP-Based single- and double-heterojunction bipolar transistors,” IEEE Trans.
Microwave Theory Tech., vol. 47, pp. 1449-1456, Aug. 1999.
[83] S. Hsu, B. Bayraktaroglu,
and D. Pavlidis, “Comparison of
conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for microwave power
applications,” Journal of Solid-State Electronics, vol. 43, no.
8, pp. 1429-1436, 1999.
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[1]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 46.7-dB gain 9.3-K noise temperature
5.8-mW two-fold current reuse dual noise-canceling LNA in 28-nm CMOS for
qubit readout,” to be presented in IEEE RFIC Symposium, Washington DC,
June 2024.
[2]
M. Chaubey,
Y. Chang, P. Wu, H. Tsai, and S. Hsu, “A 0.01-to-2.6-GHz two-fold current
reuse noise-canceling LNA for quantum applications,” to be presented in IEEE Int'l Symp.
Circuits & Systems (ISCAS), Singapore, May 2024.
[3]
Y. Chang, J. Wang, Y. Chang, C.
Chen, D. Chang, Y. Huang, and S. Hsu, “A Ka-band high power and low phase
noise GaN MMIC oscillator with a compact
open-loop folded resonator filter,” to be presented in IEEE Int. Microwave Symposium (IMS), Washington DC,
June 2024.
[4]
M. Chaubey, Y. Chang, P. Wu, H. Tsai,
and S. Hsu, “A gm-boosting inductorless noise-canceling low noise amplifier
in 40-nm CMOS for quantum applications,” to be presented in IEEE
Int. Microwave Symposium (IMS),
Washington DC, June 2024.
[5]
P. Huang, X. Chen, H. Wang, S.
Hsu, and R. Wong, “Comprehensive study of Human-Body-Model electrostatic
discharge on p-GaN gate power HEMT with AlGaN barrier spacers,” to be presented in Intl. Symp. Power Semiconductor Devices and ICs (ISPSD),
Bremen, June 2024.
[6]
H. Wang, C. Lai, P. Huang, Y.
Lin, S. Hsu, and R. Wong, “Comprehensive study on trapping-induced dynamics
in β-Ga2O3 Schottky barrier diodes under continuous switching stress,” to
be presented in Intl. Symp. Power
Semiconductor Devices and ICs (ISPSD), Bremen, June 2024.
[7]
C. Chen, J. Wang, S. Hsu, Y.
Chang, C. Hsieh, D. Chang, and Y. Huang, “Ultra-low noise voltage supply
using CMC filter for GaN oscillator phase noise
measurements,” IEEE Asia-Pacific
Microwave Conference (APMC),
Taipei, Dec. 2023.
[8]
M. Chaubey, Y. Liu, P. Wu, H. Tsai,
and S. Hsu, “A
miniature 10MHz‒3GHz sub 1-dB NF cryogenic
inductorless noise-canceling low-noise amplifier for qubit readout,” IEEE Int. Microwave Symposium (IMS),
San Diego, June 2023.
[9]
J. Wang, Y. Chang, Y. Liu, S. Li, D. Chang, Y. Huang, and S.
Hsu, “A
110-GHz push-push balanced Colpitts oscillator Using 0.15-µm GaN HEMT
technology,” IEEE Int. Microwave
Symposium (IMS), San Diego, June 2023.
[10]
Y. Chang, T. Lin, J. Wang, S. Lin, C. Hsieh, Yi Huang, S. Hsu,
and D. Chang, “A
miniature W-band substrate-integrated waveguide cavity bandpass filter
using GaAs-based IPD technology,”” IEEE
Int. Microwave Symposium (IMS), San Diego, June 2023.
[11]
J. Wang, Y. Chang, D. Chang, S. Hsu, and Y. Huang, “W-band
cavity-backed folded-slot antenna using GaAs integrated passive device
technology,” Intl. Workshop on
Antenna Technology (iWAT), Aalborg, Denmark,
May, 2023.
[12]
S. Hsu, S. Li, R. Joshi, M. Liu, S. D. Joseph, J. Wang, Y.
Liu, Y. Chang, and Y. Huang, “GaN HEMTs for
High-frequency power applications,” Asia-Pacific
Workshop on Widegap Semiconductors Taoyuan, Nov. 2022. (invited)
[13]
Y. Chang, P. Wang, T. Lin, C. Hsieh, D. Chang, and S. Hsu, “Chip-level
high-frequency EMC strategies and measurement techniques,” IEEE Int. Symp.
Radio-Frequency Integration Technology, Busan, Aug. 2022. (invited)
[14]
Y. Chang, J. Wang, T. Lin, C.
Hsieh, Y. Huang, S. Hsu, and D. Chang, “3D
chip-level broadband measurement technique for radiated EM emission,” IEEE Int. Microwave Symposium (IMS), Denver, June 2022.
[15]
S. D. Joseph, S. Hsu, and Y.
Huang, “Rectennas for wireless energy harvesting and power transfer,” IEEE Int. Symp. Radio-Frequency
Integration Technology, Taipei, Aug. 2021. (invited)
[16]
M. Wu, S. Hong, H. Su, and S. Hsu, “A
64-Gbaud transimpedance amplifier in 130nm SiGe technology with effective
broadband techniques,” IEEE Int.
Microwave Symposium (IMS), Atlanta, June 2021.
[17]
Y. Chang, T. Lin, C. Hsieh, P. Wang, S. Hsu, and D. Chang, “A
low EM susceptibility VCO with four-leaf-clover-shaped inductor verified
via chip-level 3D near-field measurement technique,” t IEEE Int. Microwave Symposium (IMS),
Atlanta, June 2021.
[18]
T. Lee, J. Zhang, S. Hong, C.
Hsu, S. Li, S. Chen, S. Sheu, C. Wu, and S. Hsu, “A
low power CMOS driver integrated with Mach-Zehnder modulator for PAM4
optical transmissions,” European Microwave
Conf. (EuMC), Jan. 2021.
[19]
R. Joshi, M. Liu, and S. Hsu, “A
high efficiency compact class F GaN MMIC power amplifier for 5G
applications,” European Microwave
Conf. (EuMC), Jan. 2021 (Best poster pitch
prize).
[20]
Y. Chang, T. Lin, C. Hsieh, Y. Chang, M. Yen, S. Hsu, and D.
Chang, “Technique of measuring injection locking of VCO,” IEEE Asia-Pacific Symp.
on Electromagn. Compat. (APEMC), Sydney, May
2020.
[21]
S. D. Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Song, “A novel duplexing antenna for
feedback wireless power transfer,” 14th
European Conf. Antennas and Propagation (EuCAP
2020), Copenhagen, Mar. 2020.
[22]
Y. Chang, T. Lin, C. Hsieh, D. Chang, S. Hsu, M. Yen, and J.
Dong, “Discrete
1Ω probe by using flip-chip IPD resistor and amplifier for inspecting EMI
of a packaged IC,” IEEE CPMT Symp. pp. 163-164, Japan (ICSJ), Nov. 2019.
[23]
S. D Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li, “A novel transmission line
technique to realize broadband rectenna for WEH and WPT applications,” 2019
Asian Wireless Power Transfer Workshop (AWPT), Xian, Oct. 2019.
[24]
C. Li, H. Wang, Y. Liu,
S. D. Joseph, Y. Huang, and S. Hsu, “Low turn-on voltage and high breakdown
GaN Schottky barrier diodes for RF energy
harvesting applications,” Intl. Conf.
on Solid State Devices and Materials (SSDM), Nagoya, Sept. 2019.
[25]
C. Li, Y. Liu, W. Hsu, C. Chuang, J. Liu, and S. Hsu, “High
frequency AlGaN/GaN T-gate
HEMTs on extremely low resistivity silicon substrates,” Intl. Conf. on Solid State Devices and
Materials (SSDM), Nagoya, Sept. 2019.
[26]
T. Chen, H. Su, T. Lee, and S. Hsu,
“A
64-Gb/s 4.2-Vpp modulator driver using stacked-FET distributed amplifier
topology in 65-nm CMOS,” IEEE
Int. Microwave Symposium (IMS), Boston, June 2019.
[27]
S. D Joseph, Y. Huang, S. Hsu, M. Stanley, A. Alieldin, and C. Li " A novel miniaturized
broadband Yagi-Uda antenna with enhanced gain for
wireless energy harvesting applications," 2019 13th European
Conference on Antennas and Propagation (EuCAP), Krakow, May, 2019.
[28]
Y. Chang, P. Wang, H. Hsiao, T. Lin, S. Hsu, M. Yen, M Lin,
and D. Chang, "EMS Characterization of LDO with On-Chip Decaps by Using Direct RF Power Injection Method,"
IEEE Intl. Workshop on
Electromagnetics (iWEM), Nagoya, Aug., 2018.
[29]
Y. Chang, T. Lin, P. Wang, S. Hsu, M. Yen, C. Hung, and D.
Chang, "Implementation of Certified 150-Ω Voltage Probe for IEC
61967-4 Conducted Electromagnetic Emission Measurement," Intl. Conf. Precision Electromagnetic
Measurements (CPEM), Pairs, July, 2018.
[30]
S. Li, S. Hsu, J. Zhang, and K. Huang, “A sub-6 GHz
compact GaN MMIC Doherty PA with a 49.5% 6 dB back-off PAE for 5G
communications,” IEEE Int.
Microwave Symposium (IMS), Philadelphia,, June
2018, pp. 805-807.
[31]
S. Joseph, Y. Huang, S. Hsu, M. Stanley, and C. Song, “A
novel dual-polarized millimeter-wave antenna array with harmonic rejection
for wireless power transmission,” 12th
European Conf. Antennas and Propagation (EuCAP
2018), London, Apr. 2018.
[32]
Y. Chang, Y. Ou, C. Hsieh, P. Wang,
S. Hsu, M. Yen, Y. Chang, C. Chen, and D. Chang, “Measurement technique for
high precision and noise sensitive ICs using multiple output-bias board
with low baseband noise,” in IEEE
International Symposium on Electromagn. Compat.
(EMC), pp. 61-64, Washington DC, Aug. 2017.
[33]
P. Wang, G. Su,
Y. Chang, D. Chang, and S. Hsu, “A current-reuse quadrature phase
oscillator with frequency pulling suppression technique,” IEEE Int. Microwave Symposium, Honolulu,
June 2017.
[34]
Y. Chang, P. Wang, S. Hsu, M. Yen, Y.
Chang, J. Dong, T. Lin, and D. Chang, “Implementation
of chip-level EMC strategies in 0.18 μm CMOS technology,” IEEE Asia-Pacific Symp.
on Electromagn. Compat. (APEMC), pp. 390-392,
Seoul, June 2017. (Best poster paper award)
[35]
Y. Chang, T. Lin, P. Wang, S. Hsu,
M. Yen, Y. Chang, M. Lin, and D. Chang, “The design of current probe in the
IEC conducted emission measurement above 1 GHz,” Int. Symp. on Antennas and Propagation
(ISAP), Okinawa, Oct. 2016.
[36]
S. Hsu, Y. Li, C. Liao,
P. Wang, Y. Liu, P. Chiu, S. Chen, K. Li, D. Thomson, and G. T. Reed,
“Integration of high speed and low power CMOS front-end circuits with
silicon photonic devices,” Int. Conf.
on Solid State Devices and Materials, Sep. 2016. (invited)
[37]
S. Chen, P. Chiu, Y. Li, S. Hsu, K. Li, D.
J. Thomson, and G. Reed, “High speed and
low power silicon-based receiver front-end for optical interconnect,” IEEE Intl. Conf. Group IV Photonics (GFP),
Aug. 2016.
[38]
D. J. Thomson, C. G. Littlejohns,
K. Li, M. Nedeljkovic, A. Z. Khokhar, F. Y. Gardes, G. Z. Mashanovich, C.
Lacava, P. Petropoulos, D. J. Richardson, M. S. Rouifed, H. Qiu, T. G. Xin,
T. Hu, Z. Zhang, H. Wang, S. Hsu, and G. T. Reed, “Integrated silicon
optical modulators,” Progress in
Electromagnetics Research Symposium (PIERS),
Aug. 2016. (invited)
[39]
S. Hsu, C. Tsou, Y. Lian, and Y. Lin, “GaN-on-silicon
devices and technologies for RF and microwave applications,” IEEE Intl. Symp.
Radio-Frequency Integration Technology, Aug. 2016. (invited)
[40]
P. Wang, M. Chou, Y. Chen, Y. Chang, D.
Chang, and S. Hsu, “A Ku-band
low-phase-noise transformer coupled VCO for satellite communications,” IEEE Intl. Symp.
Radio-Frequency Integration Technology, Aug. 2016.
[41]
Y.
Chang, P. Wang, S. Hsu, T. Lin, C. Hsieh, and D. Chang, “A V-band CPW Bandpass
Filter with Controllable Transmission Zeros in Integrated Passive Devices
(IPD) Technology,” IEEE Int.
Microwave Symposium (IMS), San Francisco, May 2016.
[42]
Y. Chang, P. Wang, S. Hsu, Y. Chang, C. Chen, and D. Chang,
“Impact and improvement of resistor process variation on RF passive circuit
design in Integrated Passive Devices (IPD) technology,” Intl. Conf. on Solid State Devices and Materials (SSDM), pp.
74-75, Sapporo, Sept. 2015.
[43]
P. Wang, Y. Shen, M. Chou, T. Wu, M. Chen,
Y. Chang, D. Chang, and S. Hsu, “A BiCMOS
Monolithic Ka-band Down-Converter for satellite communication systems,”
IEEE Int. Microwave Symposium, San
Francisco, May 2015.
[44]
Y. Chang, P. Wang, S. Hsu, M.
Yen, Y. Chang, C. Chen, and D. Chang, “Design of
the Multifunction IC-EMC Test Board with Off-Board Probes for Evaluating a
Microcontroller,” IEEE
Asia-Pacific Symp. on Electromagn.
Compat. (APEMC), pp. 223-226, Taipei, May 2015.
[45]
S. Hsu, P. Wang, P. Su,
M. Chou, Y. Chang, and D. Chang, “Design of Ku/Ka band down-converter
front-end for digital broadcast satellite receivers,” IEEE Int. Wireless Symposium, Mar. 2015. (invited)
[46]
P. Wang, T. Wu, M. Chou, M. Chen, Y.
Chang, D. Chang, and S. Hsu, “Design of wideband sub-harmonic receiver
front-end using 0.18-um BiCMOS technology,” IEEE Int. Wireless Symposium, Mar.
2015.
[47]
P. Wang, T. Wu, M. Chen, Y. Shen, Y.
Chang, D. Chang, and S. Hsu, “A
low phase noise class-C VCO using novel 8-shaped transformer,” IEEE Int'l Symp.
Circuits & Systems (ISCAS), May 2015.
[48]
P. Wang, Y. Shen, M. Chou, Y. Chang, T.
Wu, D. Chang, and S. Hsu, “Design of fully integrated receiver front-end
for VSAT applications,” IEEE 15th
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
(SiRF), Jan., 2015.
[49]
P. Wang, Y. Shen, M. Chou, K. Chuang, Y.
Chang, D. Chang, and S. Hsu, “Design of 24 GHz CMOS VCO using Armstrong
topology with asymmetric transformer,” IEEE
Asia-Pacific Microwave Conference (APMC),
2014.
[50]
P. Wang, Y. Chang, K. Chuang,
D. Chang, and S. Hsu, “A low phase noise 24
GHz CMOS quadrature-VCO using PMOS-source-follower coupling technique,”
Proc. 44th European
Microwave Circuits Conf. (EuMC), Oct. 2014, pp. 572-575.
[51]
J. Y.-C. Liu, C. Chan, and S.
Hsu, “A
K-band power amplifier with adaptive bias in 90-nm CMOS,” Proc. 44th
European Microwave Circuits Conf.
(EuMC),
Oct. 2014, pp. 1376-1379.
[52]
P. Wang, M. Chou, P. Su,
Y. Chang, K. Chuang, and S. Hsu, “A fully integrated
Ku-band down-converter front-end for DBS receivers,” IEEE Int. Microwave Symposium, Tampa
Bay, June 2014.
[53]
Y. Chang, P. Wang, S. Hsu, Y. Chang,
C. Chen,
H. Cheng,
and D. Chang,
“Investigation
on realizing
1Ω current
probe
complied
with IEC 61967-4 direct coupling method,”
in Proc. International Symposium on
Electromagnetic Compatibility (EMC’14), pp. 573-576, Tokyo, Japan, May
2014. (Best paper award
finalist)
[54]
M. Tsai and S. Hsu, “ESD protection design
for microwave/millimeter wave low-noise amplifiers,” IEEE Int. Wireless Symposium, Mar.
2014. (invited)
[55]
Y. Chang,
S.
Hsu, Y. Chang, C. Chen, H. Cheng, and D. Chang, ”The
direct
RF power
injection
method
up to 18 GHz for Investigating IC's Susceptibility,” in Proc. International Workshop on
Electromagnetic Compatibility of Integrated Circuits (EMCCompo), pp. 167-170, Nara, Japan, Dec.
2013.
[56]
G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. Wilson, L. Zimmermann, H.
Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli,
K. Debnath, T. Krauss, and L. O’Faolain, “Options for silicon
based modulators,” Frontiers
in Optics 2013, Orlando, October 2013. (invited)
[57]
G. Reed, D. Thomson, F. Gardes, G. Mashanovich, Y. Hu, K. Li, P. W. Wilson, L. Zimmermann,
H. Porte, B. Goll, H. Zimmermann, D. Knoll, S. Lischke, S. Chen, S. Hsu, J. Fedeli,
K. Debnath, T. Krauss, and L. O’Faolain, “Silicon optical modulators for
short reach interconnect,” Int. Conf.
on Solid State Devices and Materials (SSDM), Fukuoka, Sep. 2013. (invited)
[58]
C. Tsou, Y. Lian, J. Hung, Y.
Lin, and S. Hsu, “AlGaN/GaN
HEMTs on silicon with hybrid source/drain for source-drain scaling and
frequency dispersion suppression,” 2013 Int.
Conf. on Solid State Devices and Materials (SSDM). (late news)
[59]
D. Thomson, F. Gardes, Y. Hu, G. Mashanovich, G. Reed, L. Zimmermann, D. Knoll, S. Lischke, H. Porte, B. Goll,
H. Zimmermann, L. Ke, P. Wilson, S. Chen, S. Hsu,
G. Duan, A. Le Liepvre, C. Jany,
A. Accard, M. Lamponi,
D. Make, F. Lelarge, S. Messaoudene,
D. Bordel, J. Fedeli, S. Keyvaninia,
G. Roelkens, and D. Van Thourhout,
“Integration
of high performance silicon optical modulators,” IEEE Group IV Photonics, Seoul, Aug.
2013. (invited)
[60]
Y. Chang, S. Hsu, H. Cheng, and
D. Chang, “The practical measurement setup of DPI method above 1 GHz for
ICs,” in IEEE Proc. Asia-Pacific Symp. Electromagnetic Compatibility, Melbourne, May 2013. (Best
paper award)
[61]
M. Tsai, H. Hsieh, C. Lin, L.
Chu, S. Hsu, J. Jin, T. Yeh, C. Jou, F. Hsueh, and M. Ker, “A 56-67
GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in
65-nm CMOS,” in Proc. IEEE Asia-Pacific Microwave Conference, pp.
747-749, Kaohsiung, Dec. 2012.
[62]
M. Tsai, S. Huang, and S. Hsu,
“ESD protection design for V-band low-noise amplifier using RF junction
varactors,” Int. Conf. on Solid State Devices and
Materials (SSDM), Kyoto, Sep. 2012.
[63]
K. Tan, C. Lai, P. Lu, C. Tu,
G. Huang, J. Wu, S. Hsu, and T. Chu, “A 79GHz UWB
Pulse-Compression Vehicular Radar in 90nm CMOS,” IEEE Int. Microwave Symposium, Montreal, June 2012.
[64]
M. Tsai, S. Hsu, T. Yeh, C. Jou, and F. Hsueh, “A V-band
low-noise
amplifier
with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF
CMOS,” IEEE Int. Microwave
Symposium,
Montreal, June 2012.
[65]
Y. Chang, B. Wang, S. Hsu, Y. Chang, C. Chen, Y. Juang, H. Cheng and D. Chang, “The evaluation
flow
for EMC behavior
of RF ICs,” in Proc. IEEE
Asia-Pacific Symp. on Electromagn.
Compat ,
pp. 321-324, Singapore, May, 2012.
[66]
S. Hsu, W. Cho, S. Chen, and J. Jin,
“CMOS Broadband Amplifiers for Optical Communications and Optical
Interconnects,” IEEE Int. Symp. Radio-Frequency Integration Technology,
Beijing, Dec. 2011. (invited)
[67]
Y. Chang, D. Chang, S. Hsu, J. Lee, S. Lin, and Y. Juang, “A
matrix-computation based methodology for extracting the S-Parameters of
interconnects in advanced packaging technologies,” in Proc. IEEE Asia-Pacific Microwave Conference, pp.
1909-1912, Dec. 2011.
[68]
S. Hsu and M. Tsai, “Low-noise
amplifiers with robust ESD protection for RF SOC,” Inter. SoC Design Conference, Jeju,
Nov. 2011. (invited)
[69]
Y. Chang, S. Hsu, D. Chang, J. Lee, S. Lin, and Y. Juang, “A
de-embedding method for extracting S-parameters of vertical interconnect in
advanced packing,” in Proc. IEEE
Int. Conf. Electrical
Performance of Electronic Packaging and Systems, pp.
219-222, San Jose, Oct. 2011.
[70]
C. Yu, C. Huang, P. Chu, K. Chen, S. Hsu, H. Chiu, and F.
Zhao, “High-voltage AlGaN/GaN
HEMTs on Si substrate with implant isolation,” Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya,
Sep. 2011.
[71]
Y. Lin, Y. Lian, H. Lu, Y. Huang, and S. Hsu, “AlGaN/GaN HEMTs on silicon
with hybrid schottky-ohmic drain for improved DC
characteristics,” Int. Conf. on Solid
State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[72]
J. Wang, T. Huang, Y. Wu, S. Hsu, Z. Lin, C. Lin, S. Sheu, T. Ku, and C. Lin, “Testkey design of through
silicon vias (TSVs) for accurate de-embedding and RF model parameters
extraction,” Int. Conf. on Solid
State Devices and Materials (SSDM), Nagoya, Sep. 2011.
[73]
M. Tasi, S. Hsu, T. Yeh, J. Jin, H. Hsueh, C. Jou, and F.
Hsueh, “A
24-GHz low-noise amplifier co-designed with ESD protection using junction
varactors in 65-nm RF CMOS,” IEEE
Int. Microwave Symposium, Baltimore, June 2011.
[74]
F. Chen, M. Kao, Y. Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu, “A 10 to 11.5 GHz rotational
phase and frequency detector for clock recovery circuit,” IEEE Int. Symp.
Circuits and Systems (ISCAS), Rio de Janeiro, May 2011 (Best Student
Paper Contest Finalist).
[75]
M. Tasi, S. Hsu, F. Hsueh, C. Jou, M. Song, J. Tseng, T. Chang, and D. Nag, “An analog
front-end circuit with dual-directional SCR ESD protection for UHF-band
passive RFID Tag,” IEEE Int. Conf.
RFID, Orlando, pp. 206-209, April 2011.
[76]
C. Luo, Y. Wu, J. Wang, and S. Hsu, “RF modeling of through
silicon vias (TSVs) in 3D IC,” Proc.
Int. Conf. on Solid State Devices and Materials (SSDM), pp. 239-240,
Tokyo, Sep. 2010.
[77]
C. Hsiao, W. Wang, T. Su, Y. Wu, and
S. Hsu, “A gate-drain coupling distributed amplifier
in 90-nm CMOS technology,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 810-811, Tokyo, Sep. 2010.
[78]
W. Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “A novel
MUX-FF circuit for low power and high speed serial
link interfaces,” IEEE Int. Symp. Circuits and Systems (ISCAS), pp. 4305-4308,
Paris, May 2010.
[79]
Y. Hsu, M. Kao, F. Chen, C. Chiu, J. Wu, and S. Hsu, “A 32Gbps low propagation
delay 4´4 switch IC for
feedback-based system in 0.13 µm CMOS technology,” IEEE Int. Symp. Circuits and Systems
(ISCAS), pp. 581-584, Paris, May 2010.
[80]
M. Tasi, F. Hsueh, C. Jou, M. Song, J. Tseng, S. Hsu, and S. Chen, “A
6.5 kV ESD-protected low noise amplifier in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig.,
pp.485-488, Anaheim, May 2010.
[81]
S. Hsu and J. Jin, “CMOS
broadband amplifiers for optical communications,” Int. Symp.
Microwave and Optical Technology, New Delhi, India, pp. 1251-1254, Dec. 2009 (invited).
[82]
Y. Lin, Y. Lian, S. Hsu, and T. Lee, “Low leakage AlGaN/GaN HEMTs with a high On/Off current ratio,” Int. Conf. on Solid State Devices and Materials (SSDM), Miyagi,
Oct. 2009.
[83]
Y. Lian, Y. Lin, and S. Hsu, “High breakdown GaN Schottky diodes with buried P-layer structure,” Int. Conf. on Solid State Devices and
Materials (SSDM), Miyagi, Oct. 2009.
[84]
M. Tasi, S. Hsu, and K. Tan, “A low noise amplifier
co-designed with ESD protection circuit in 65-nm CMOS,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 573-576, Boston, June 2009.
[85]
S. Hsu, “Design techniques for CMOS broadband
amplifiers,” CMOS Emerging
Technologies Workshops, Banff, Feb. 2009 (invited).
[86]
Y. Lin, J. Wu, S. Hsu, C. Chan, and Y. Lian, “GaN-based Schottky varactors for high-power RF
applications,” Proc. Int. Conf. on Solid State Devices and
Materials (SSDM), pp. 506-507, Ibaraki, Sep. 2008.
[87]
J. Jin and S. Hsu, “A 70-GHz
transformer-peaking broadband amplifier in 0.13-μm CMOS technology,” IEEE MTT-S Int. Microwave Symp. Dig., Atlanta, pp. 285-288, June 2008.
[88]
J. Jin and S. Hsu, “Wideband CMOS
transimpedance amplifier design using transformer-peaking technique,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 492-493, Ibaraki, Sep. 2007.
[89]
J. Jin, S. Hsu, T. Yeh, M. Yang, S.
Liu, “Fully
analytical modeling of Cu interconnects up to 110 GHz,” Proc. Int. Conf. on
Solid State Devices and Materials(SSDM), pp. 908-909,
Ibaraki, Sep. 2007.
[90]
Y. Lin, T. Lee, Y. Wang, and S. Hsu, “Layout optimization
of AlGaN/GaN HEMTs for high-power applications,” Proc. Int. Conf. on Solid State Devices
and Materials (SSDM), pp. 156-157, Ibaraki, Sep. 2007.
[91]
S. Wang, Y. Wu, S. Hsu, and C. Chan, “Substrate coupling
effect under various noise injection topologies in LC-voltage controlled
oscillator,” IEEE RFIC Symp., pp. 705-708, Hawaii, June 2007.
[92]
C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y. Juang,
“Edge-extended
design for improved flicker noise characteristics in 0.13-µm RF NMOS,” IEEE
MTT-S Int. Microwave Symp., pp. 441-444,
Hawaii, June 2007.
[93]
C. Chiu, Y. Hsu, M. Kao, H. Tzeng, M. Du, P. Yang, M. Lu, F.
Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu, “A scalable load balanced Birkhoff-von
Neumann symmetric TDM switch IC for high-speed networking
applications,” IEEE
Int. Symp. Circuits and Systems, pp.
2754-2757, New Orleans, May 2007.
[94]
L. Fan, S. Hsu, J. Jin, C. Hsieh, W.
Lin, H. Hao, H. Cheng, K. Hsueh, and C. Lee, “Miniaturization of magnetic
resonance microsystem components for 3D cell imaging,” IEEE Int. Solid-State Circuit Conf. (ISSCC), San Francisco, pp.
166-168, Feb. 2007.
[95]
Y. Hsu, M. Kao, H. Tzeng, C. Chiu, J. Wu, and S. Hsu, “A
20Gbps scalable load balanced Birkhoff-von Neumann symmetric TDM switch IC
with SERDES interfaces,” IEEE
proc. 12th Asia and South Pacific Design Automation Conf., pp. 23-26, Yokohama, Jan. 2007.
[96]
C. Chan, P. Tsai, T. Lee, S. Hsu, J. Kwo,
and M. Hong, “Flicker
noise characteristics in GaAs MOSFETs,” MBE conf., Durham, Sep.
2006.
[97]
C. Chan, J. Jin, Y. Lin, S. Hsu, and
Y. Juang, “STI effect on
flicker noise in 0.13-µm RF NMOS,” European Solid-state Device
Conference (ESSDERC), pp.101-104, Montreux,
Sep. 2006.
[98]
J. Jin and S. Hsu, “40-Gb/s
transimpedance amplifier in 0.18-µm CMOS technology,” European
Solid-state Circuit Conference (ESSCIRC), pp. 520-523, Montreux, Sep.
2006.
[99]
J. Jin, S. Hsu, M. Yang, and S. Liu,
“Low-loss
single and differential semi-coaxial interconnects in standard CMOS
process,” IEEE MTT-S Int. Microwave Symp.
Dig., pp. 420-423, San Francisco, June 2006.
[100] C. Hsiao, M. Kao, C.
Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, “3.2
Gbit/s CML transmitter with 20:1 multiplexer in 0.18-µm CMOS technology,”
IEEE Int. Conf. Mixed Design of Integrated Circuits and
Systems, pp. 179-183, June 2006.
[101] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu “InP/GaAsSb/InP DHBT technology and its application to MM-wave
integrated oscillators,” proc. 30th Workshop on Compound
Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), Fiskebäckskil,
S. 51-53, May 2006.
[102] D. Pavlidis, P. Valizadeh, and
S. Hsu, “AlGaN/GaN
high electron mobility transistor (HEMT) reliability,” European
Microwave Conf., Paris, pp. 265-268, Oct. 2005.
[103] C. Chiu, J. Wu, S.
Hsu, M. Kao, C. Jen, and Y. Hsu, “A 10Gb/s
wide-band current-mode logic I/O interface for high-speed interconnect in
0.18-µm CMOS technology,” IEEE Int. SOC Conf., pp. 257-260, Sep.
2005.
[104] L. Fan, W. Huang, C.
Cheng, P. Chu, H. Hao, C. Hsieh, S. Hsu, A. Jin,
K. Hsueh, C. Lee, J. Chang, E. Liu, A. Huang, C. Chien,
A. Yeh, J. Chen, W. Wu, and C. Lai, “Magnetic
resonance Microsystems for life science applications,” Proc. of
Transducers 2005, pp.1998-2001, Seoul, Korea, June 2005.
[105] X. Zhu, J. Wang, D. Pavlidis, and S. Hsu, “First demonstration
of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP
DHBTs,” IEEE MTT-S Int.
Microwave Symp. Dig., pp. 101-103, June 2005.
[106] S. Hsu and D. Pavlidis, “Analysis
and modeling of dispersion characteristics in AlGaN/GaN MODFETs,” proc.
25th IEEE GaAs IC Symposium, pp. 119-122, Nov. 2003.
[107] D. Pavlidis, S. M. Hubbard, S. Hsu and S. Seo “AlGaN/GaN and AlN/GaN heterostructuredevices: A
possible device technology for high RF power wireless transmission” 2003 Japan-United States Joint Workshop on
Space Solar Power System (JUSPS'03), July, 2003, Kyoto, Japan
[108] X. Zhu, S. Hsu and
D. Pavlidis, “First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs,” Topical Workshop on
Heterostructure Microelectronics for Information Systems Applications,
Okinawa, Japan, pp. 18-19, Jan. 2003.
[109] D. Pavlidis, S. Hubbard, S. Hsu and P. Valizadeh, “GaN device and
material considerations: A tutorial and general discussion” 2002 GaAs REL Workshop, Monterey,
Oct. 2002.
[110] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Impacts
of RF stress on dispersion effects andpower characteristics for AlGaN/GaN
HEMTs,” proc. 24th IEEE GaAs
IC Symposium,
pp. 85-88, 2002.
[111] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Characterization
and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs,” proc. IEEE Lester
Eastman conference, pp. 453-460, 2002.
[112] S. Hsu, P. Valizadeh, D. Pavlidis, J. S.
Moon, M. Micovic, D. Wong and T. Hussain, “Study
on large-signal linearity and efficiency of AlGaN/GaN MODFETs,” proceeding of 32nd European microwave
conference,
pp. 1-4, 2002.
[113] S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic,
D. Wong and T. Hussain, “Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of
their origins,” proc. 26th Workshop
on Compound Semiconductor Devices and Integrated Circuits in Europe
(WOCSDICE), Chernogolovka, pp. 115-116, May
2002.
[114] D. Cui, D. Pavlidis, S. Hsu, D. Sawdai,
P. Chin and T. Block, “InP-based NPN-PNP HBT
common collector push-pull monolithic integrated amplifiers,” proc. 26th Workshop on
Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE),
Chernogolovka, pp. 147-148, May 2002.
[115] S. Hsu, D. Pavlidis, J. Moon, M. Micovic,
C. Nguyen, and D. Grider, “Low
noise AlGaN/GaN MODFETs with high breakdown and power characteristics,”23rd
IEEE GaAs IC Symposium, pp. 229-232, Oct. 2001.
[116] S. Hsu, D. Pavlidis, M. Ida, and T. Enoki, “Low noise, high-speed
InP/InGaAs HBTs,” 23rd IEEE GaAs IC Symposium, pp. 188-191, Oct. 2001.
[117] S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic,
C. Nguyen, D. Grider, “High frequency
noise studies in AlGaN/GaN MODFETs,” proceeding of 25th Workshop on Compound Semiconductor
Devices and Integrated Circuits in Europe (WOCSDICE),
Cagliari, pp.147-148, May 2001.
[118] D. Cui, S. Hsu and
D. Pavlidis, “First InP/InGaAs
PNP HBT grown by metal organic chemical vapor deposition”, 13th IEEE
Int. Conf. Indium Phosphide and Related materials (IPRM’01), Nara,
Japan, pp. 224-227, May 2001.
[119] E. Alekseev, S. Hsu,
D. Pavlidis, T. Tsuchiya and M. Kihara, “Broadband AlGaN/GaN HEMT MMIC
attenuators with high dynamic range,” Proceeding of 30th European microwave conference, 2000.
[120] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis,
P. Chin and T. Block, “Low
DC power, high gain-bandwidth product, coplanar Darlington feedback
amplifiers using InAlAs/InGaAs heterojunction bipolar transistors,” 22nd IEEE GaAs IC
Symposium, pp.259-262, 2000.
[121] D. Cui, D. Sawdai, S. Hsu, D. Pavlidis, , P. Chin and T. Block, “High power performance
using InAlAs/InGaAs single HBTs,” 12th IEEE Indium Phosphide and
Related Materials (IPRM’00), Williamsburg, VA, May 15-19, pp.
473-476, 2000.
[122] D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, D. Sawdai, D. Pavlidis, and S.
Hsu, “Hole
impact ionization coefficient in (100)-oriented In0.53Ga0.47As,” 12th IEEE Indium Phosphide and Related
Materials (IPRM’00), Williamsburg, pp. 258-261, May 2000.
[123] S. Hsu, P.N. Tan, D.
Pavlidis, E. Alekseev, N.X. Nguyen, C. Nguyen,
and D.E. Grider, “Frequency
dependent output resistance and transconductance in ALGaN/GaN MODFETs,” Proceeding of 1999 International
Semiconductor Device Research Symposium (ISDRS), Charlottesville, pp. 315-317, Dec. 1999.
[124] S. Hsu, D. Sawdai, and D. Pavlidis, “Modeling of
highly-nonlinear HBT characteristics using a distributed thermal subcircuit
derived from pulsed measurements,” 53rd ARFTG conference (MTT
Symposium) Digest, Anaheim, pp.139-145, June 1999.
[125] S. Hsu, B. Bayraktaroglu and D. Pavlidis,
“Comparison of
conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications,” Topical Workshop on Heterostructure
Microelectronics for Information Systems Applications, Kanagawa, Japan,
Aug. 30-Sep. 2, pp. S3-6, 1998.
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