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<o:shapelayout v:ext="edit"> <o:idmap v:ext="edit" data="1"/> </o:shapelayout></xml><![endif]--> </head> <body lang=EN-US link=blue vlink=purple style='tab-interval:.5in;background-attachment: fixed'> <div class=WordSection1> <div align=center> <table class=MsoNormalTable border=0 cellspacing=0 cellpadding=0 width="62%" style='width:62.0%;border-collapse:collapse;mso-yfti-tbllook:1184;mso-padding-alt: 0in 0in 0in 0in'> <tr style='mso-yfti-irow:0;mso-yfti-firstrow:yes;mso-yfti-lastrow:yes'> <td width="98%" style='width:98.0%;border:solid white 3.0pt;padding:0in 0in 0in 0in'> <table class=MsoNormalTable border=0 cellspacing=0 cellpadding=0 width=925 style='width:693.75pt;mso-cellspacing:0in;mso-yfti-tbllook:1184;mso-padding-alt: 0in 0in 0in 0in'> <tr style='mso-yfti-irow:0;mso-yfti-firstrow:yes;height:59.25pt'> <td rowspan=3 style='border:solid white 1.0pt;mso-border-alt:solid white .25pt; padding:0in 0in 0in 0in;height:59.25pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img width=156 height=117 id="_x0000_i1037" src="images/image002.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\images\image002.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> <td colspan=4 style='border:solid white 1.0pt;mso-border-alt:solid white .25pt; padding:0in 0in 0in 0in;height:59.25pt'> <p class=MsoNormal align=center style='text-align:center'><span style='font-size:18.0pt;font-family:"Arial Black","sans-serif";mso-fareast-font-family: "Times New Roman";color:purple;mso-no-proof:yes'><img width=765 height=68 id="_x0000_i1036" src=imgA.jpg alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\imgA.jpg"></span><span style='font-size:18.0pt;font-family:"Arial Black","sans-serif";mso-fareast-font-family: "Times New Roman";color:purple'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:1;height:15.75pt'> <td colspan=4 style='padding:0in 0in 0in 0in;height:15.75pt'> <p align=center style='text-align:center'><strong><span style='font-family: "Arial","sans-serif"'>&nbsp;</span></strong><span style='font-family:"Arial","sans-serif"'><a href="http://www.ee.nthu.edu.tw"><strong><span style='font-family:"Arial","sans-serif"'>Electrical Engineering Department,</span></strong></a> <a href="http://www.ene.nthu.edu.tw"><strong><span style='font-family:"Arial","sans-serif"'>Institute of Electronics Engineering</span></strong></a></span></p> </td> </tr> <tr style='mso-yfti-irow:2;height:18.75pt'> <td colspan=4 style='padding:0in 0in 0in 0in;height:18.75pt'> <p align=center style='text-align:center'><span class=style41>&nbsp;</span><b><span style='font-size:10.0pt;font-family:"Arial","sans-serif"'><a href="http://www.nthu.edu.tw/"><span class=style201><span style='font-size: 12.0pt'>National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University</span></span></a></span></b><span class=style201><b><span style='font-family:"Arial","sans-serif"'>, <span class=SpellE>Hsinchu</span>, Taiwan</span></b></span></p> </td> </tr> <tr style='mso-yfti-irow:3;height:1.5in'> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:1.5in'> <p class=style20 align=center style='text-align:center'><a href="bio.htm"><span style='mso-no-proof:yes;text-decoration:none;text-underline:none'><img border=0 width=122 height=141 id="_x0000_i1035" src="images/shawn.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\images\shawn.jpg"></span></a><o:p></o:p></p> </td> <td colspan=4 style='background:#FFFFCC;padding:0in 0in 0in 0in;height: 1.5in'> <p class=style20 style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span><o:p></o:p></p> <p style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span class=style201>&nbsp;</span><b><span style='font-family:"Arial","sans-serif"; color:#0000CC'><a href="bio.htm"><span class=style201>Shawn S. H. Hsu</span></a><span class=style201>, Professor</span></span></b><o:p></o:p></p> <p style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span class=style201><b><span style='font-family:"Arial","sans-serif";color:#0000CC'>&nbsp;EECS Bldg. Room 509, </span></b></span><b><span style='font-family:"Arial","sans-serif"; color:#0000CC'><a href="mailto:shhsu@ee.nthu.edu.tw"><span class=style201>shhsu@ee.nthu.edu.tw</span></a><span class=style201>, 886-3-5731278 </span></span></b><o:p></o:p></p> <p class=style20 style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span><o:p></o:p></p> <p style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><b><span style='font-family:"Arial","sans-serif"'>&nbsp;PH. D. : <a href="http://www.eecs.umich.edu">Electrical Engineering</a>, <a href="http://www.umich.edu">University of Michigan</a>, Ann Arbor, USA</span></b><o:p></o:p></p> <p class=style24 style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span style='font-family:"Arial","sans-serif"'>&nbsp;M. S. :&nbsp;&nbsp; Electrical Engineering, University of Michigan, Ann Arbor, USA</span><o:p></o:p></p> <p style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><b><span style='font-family:"Arial","sans-serif"'>&nbsp;B. S. :&nbsp;&nbsp; Electrical Engineering, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University, <span class=SpellE>Hsinchu</span>, Taiwan</span></b><o:p></o:p></p> <p class=style20 style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span><o:p></o:p></p> <p class=style20 style='margin:0in;margin-bottom:.0001pt;word-spacing:0in'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span></p> </td> </tr> <tr style='mso-yfti-irow:4;height:34.5pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:34.5pt'> <p style='margin:0in;margin-bottom:.0001pt;line-height:150%'><b><span style='font-family:"Arial","sans-serif";color:blue'>Research Interests</span></b></p> </td> </tr> <tr style='mso-yfti-irow:5;height:1.25in'> <td colspan=5 style='background:#CCFFFF;padding:0in 0in 0in 0in;height: 1.25in'> <ul type=disc> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l3 level1 lfo1;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:blue'>MMIC/RFIC: </span></b><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"'>design high performance microwave/RF integrated circuits for wireless/optical communications<span style='mso-bidi-font-weight:bold'><o:p></o:p></span></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l3 level1 lfo1;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";color:#0000CC'>MW/RF Semiconductor Devices: </span></b><b><span style='font-family:"Arial","sans-serif"; color:black;mso-themecolor:text1'>design and fabricate high speed semiconductor devices for MMIC/RFIC</span></b><b><span style='font-family:"Arial","sans-serif"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l3 level1 lfo1;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";color:blue'>Power Electronics Devices</span></b><b><span style='font-family:"Arial","sans-serif"'>: innovate and develop in-house technology (mainly nitride-based) for high efficiency power electronics applications<o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l3 level1 lfo1;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";color:blue'>MW/RF System-on-Chip:</span></b><b><span style='font-family:"Arial","sans-serif"'> design microwave/RF system-on-chip (SOC) with 3D IC and/or heterogeneous integration for next generation high speed wireless/optical communications<o:p></o:p></span></b></li> </ul> </td> </tr> <tr style='mso-yfti-irow:6;height:24.0pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.0pt'> <p style='margin:0in;margin-bottom:.0001pt;line-height:150%'><b><span style='font-family:"Arial","sans-serif";color:blue'>Honors and Recognition</span></b><span style='mso-fareast-font-family:°e0}fÔš'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:7;height:24.0pt'> <td colspan=5 style='background:#FFFFCC;padding:0in 0in 0in 0in;height: 24.0pt'> <ul type=disc> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2011 Outstanding teaching award, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University</span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2011 National Chip Implementation (CIC) outstanding chip design award: best design award&nbsp; </span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2011 National Chip Implementation (CIC) outstanding chip design award: honorable mention </span><span class=style241><span style='mso-bidi-font-weight:normal'><o:p></o:p></span></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>20</span></span><span class=style241><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:#009933'>11</span></span><span class=style241><span style='font-family:"Arial","sans-serif";color:#009933'> Symposium on Nano Device Technology </span></span><span class=style241><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:#009933'>Excellent Student Paper Award: 2nd place</span></span><span class=style241><span style='mso-bidi-font-weight:normal'><o:p></o:p></span></span></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933;mso-bidi-font-weight:normal'>2010 TSMC outstanding student research award: </span></span><b style='mso-bidi-font-weight: normal'><span style='font-family:"Arial","sans-serif";color:#009933'>honorable mention</span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2009 Outstanding young electrical engineer award, the Chinese Institute of Electrical Engineering, Taiwan</span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2009 National Chip Implementation (CIC) outstanding chip design award: best design award&nbsp; </span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2009 National Chip Implementation (CIC) outstanding chip design award: honorable mention </span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2008 MXIC golden silicon awards: honorable mention </span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2008 National Chip Implementation (CIC) outstanding chip design award: best design award</span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style201><b><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 Junior faculty research award, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University </span></b></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style201><b><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 Junior faculty research award, College of Electrical Engineering and Computer Science, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University</span></b></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 Outstanding teaching award, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University</span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 MXIC golden silicon awards: 1st place </span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 MXIC golden silicon awards: Distinguished advisor award</span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 National Chip Implementation (CIC) outstanding chip design award: special design award</span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b style='mso-bidi-font-weight:normal'><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 National Chip Implementation (CIC) outstanding chip design award: honorable mention </span><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2007 Symposium on Nano Device Technology NDL excellent student paper award</span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2006 Outstanding teaching award, College of Electrical Engineering and Computer Science, National <span class=SpellE>Tsing</span> <span class=SpellE>Hua</span> University</span></span><b style='mso-bidi-font-weight:normal'><o:p></o:p></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;line-height:150%;mso-list:l1 level1 lfo2;tab-stops:list .5in'><span class=style241><span style='font-family:"Arial","sans-serif"; color:#009933'>2006 TSMC outstanding student research award: 3rd place</span></span></li> </ul> </td> </tr> <tr style='mso-yfti-irow:8;height:24.0pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.0pt'> <p style='margin:0in;margin-bottom:.0001pt'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span></p> <p style='margin:0in;margin-bottom:.0001pt'><b><span style='font-family: "Arial","sans-serif";color:#0000CC'><a href="Circuits%20related%20research.htm">Circuit Related Research</a></span></b></p> </td> </tr> <tr style='mso-yfti-irow:9;height:112.5pt'> <td style='background:#CCFFFF;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman"'>&nbsp;</span><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=172 height=142 id="_x0000_i1034" src="Circuits%20related%20research%20figures/imgA1.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgA1.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'>&nbsp; <o:p></o:p></span></p> </td> <td style='background:#CCFFFF;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=176 height=146 id="_x0000_i1033" src="Circuits%20related%20research%20figures/imgC.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgC.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> <td style='background:#CCFFFF;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=172 height=142 id="_x0000_i1032" src="Circuits%20related%20research%20figures/imgD.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgD.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> <td style='background:#CCFFFF;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=174 height=144 id="_x0000_i1031" src="Circuits%20related%20research%20figures/imgE.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgE.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> <td style='background:#CCFFFF;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=172 height=142 id="_x0000_i1030" src="Circuits%20related%20research%20figures/imgF.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Circuits related research figures\imgF.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:10;height:24.75pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><span lang=ZH-TW style='font-family:"°e0}fÔš","serif"; mso-bidi-font-family:°e0}fÔš'>0</span><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:11;height:.75pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:.75pt'> <p style='margin:0in;margin-bottom:.0001pt;mso-line-height-alt:.75pt'><b><span style='font-family:"Arial","sans-serif";color:#0000CC'><a href="Devices%20Related%20Research.htm">Device</a><a href="Devices%20Related%20Research.htm"> Related Research</a></span></b></p> </td> </tr> <tr style='mso-yfti-irow:12;height:112.5pt'> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:112.5pt'> <p align=center style='text-align:center'><span style='mso-no-proof:yes'><img border=0 width=171 height=144 id="_x0000_i1029" src="Device%20related%20research%20figures/index.9.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.9.jpg"></span></p> </td> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:112.5pt'> <p class=MsoNormal align=center style='text-align:center'><span style='mso-fareast-font-family:"Times New Roman";mso-no-proof:yes'><img border=0 width=180 height=134 id="_x0000_i1028" src="Device%20related%20research%20figures/index.12.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.12.jpg"></span><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:112.5pt'> <p align=center style='text-align:center'><span style='mso-no-proof:yes'><img border=0 width=150 height=138 id="_x0000_i1027" src="Device%20related%20research%20figures/index.10.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.10.jpg"></span></p> </td> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:112.5pt'> <p align=center style='text-align:center'><span style='mso-no-proof:yes'><img border=0 width=171 height=132 id="_x0000_i1026" src="Device%20related%20research%20figures/index.13.jpg" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\index.13.jpg"></span></p> </td> <td style='background:#FFFFCC;padding:0in 0in 0in 0in;height:112.5pt'> <p align=center style='text-align:center'><span style='mso-no-proof:yes'><img border=0 width=171 height=127 id="_x0000_i1025" src="Device%20related%20research%20figures/SC%20line.gif" alt="Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: Description: D:\Homepage\Device related research figures\SC line.gif"></span></p> </td> </tr> <tr style='mso-yfti-irow:13;height:25.5pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:25.5pt'> <p class=MsoNormal><span lang=ZH-TW style='font-family:"°e0}fÔš","serif"; mso-bidi-font-family:°e0}fÔš'>0</span><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:14;height:24.75pt'> <td colspan=5 style='background:white;padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><b><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:#0000CC'>Group Members</span></b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:15;height:24.75pt'> <td colspan=5 style='background:#CCFFFF;padding:0in 0in 0in 0in;height: 24.75pt'> <ul type=disc> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"'><a href="Phd_students.htm">PH. 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Students</a></span></b><b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l1 level1 lfo2;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"'>Master Students&nbsp;&nbsp; <a href="master%20students_2004_2005.htm">2004-2005</a>&nbsp; <a href="master%20students_2006_2007.htm">2006-2007</a>&nbsp; <a href="master%20students_2008_2009.htm">2008-2009</a> <a href="master%20students_2010_2011.htm">2010-2011</a></span></b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></li> </ul> </td> </tr> <tr style='mso-yfti-irow:16;height:24.75pt'> <td colspan=5 style='background:white;padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><b><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:#0000CC'>Courses</span></b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:17;height:14.25pt'> <td colspan=5 style='background:#CCCCFF;padding:0in 0in 0in 0in;height: 14.25pt'> <ul type=disc> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l2 level1 lfo3;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"'><a href="EE2255.htm">EE 2255&nbsp;&nbsp;&nbsp; Microelectronic Circuits</a></span></b><b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l2 level1 lfo3;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:#006600'><a href="EE2260.htm">EE 2260&nbsp;&nbsp;&nbsp; Microelectronic Circuits II</a></span></b><b><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l2 level1 lfo3;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"'><a href="EE2270.htm">EE 2270&nbsp;&nbsp;&nbsp; Microelectronic Circuits Lab</a></span></b><b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l2 level1 lfo3;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:#006600'><a href="EE4250.htm">EE 4250&nbsp;&nbsp;&nbsp; Introduction to Microwave Circuits</a></span></b><b><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></b></li> <li class=MsoNormal style='mso-margin-top-alt:auto;mso-margin-bottom-alt: auto;mso-list:l2 level1 lfo3;tab-stops:list .5in'><b><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:#006600'><a href="ENE5250.htm">ENE 5250 Analysis and Design of Microwave Circuits</a></span></b><b><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></b></li> </ul> </td> </tr> <tr style='mso-yfti-irow:18'> <td colspan=5 style='padding:0in 0in 0in 0in'> <p class=MsoNormal><span lang=ZH-TW style='font-family:"°e0}fÔš","serif"; mso-bidi-font-family:°e0}fÔš'>0</span><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:19;height:24.75pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><b><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:#0000CC'>Publication List</span></b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:20;height:24.75pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><b><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:#006600'>&nbsp;Journal papers</span></b><b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></b></p> </td> </tr> <tr style='mso-yfti-irow:21'> <td colspan=5 style='background:#CCFFFF;padding:0in 0in 0in 0in'> <p class=style16 style='margin-left:21.25pt;text-indent:-21.25pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span style='font-size:12.0pt;mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[1]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-size:12.0pt'>M. Tsai and S. Hsu,  A V-Band Low-Noise Amplifier Co-Designed with ESD Network in 65-nm RF CMOS, accepted for <i style='mso-bidi-font-style:normal'>Microwave Optical Technology Letters</i>.<o:p></o:p></span></p> <p class=style16 style='margin-left:24.6pt;text-indent:-24.6pt;mso-list: l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span class=style201><span style='font-size:12.0pt;mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[2]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-size:12.0pt'>M. Tsai, S. Hsu, F. <span class=SpellE>Hsueh</span>, and C. <span class=SpellE>Jou</span> , <a href="journal%20papers/TMTT_ESD%20RF%20junction%20varactor_LNA_2011.pdf"> ESD-protected K-band low-noise amplifiers using RF junction <span class=SpellE>varactors</span> in 65-nm CMOS, </a> <span class=style201><i>IEEE Trans. Microwave Theory Tech.</i><span style='mso-bidi-font-style:italic'>, vol. 59, no. 12, pp. 3455-3462, Dec. 2011. </span><o:p></o:p></span></span></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span class=style201><span style='font-size:12.0pt;mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[3]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span></span><![endif]><span class=style201><span style='font-size:12.0pt'>C. Hsiao, S. Hsu, and D. Chang, <a href="journal%20papers/MWCL_IPD%20V-band%20filter.pdf"> A compact V-band <span class=SpellE>bandpass</span> filter in IPD technology, </a> <i style='mso-bidi-font-style:normal'>IEEE Microwave and Wireless Component <span class=SpellE>Lett</span>.</i> vol. 21, no. 10, pp. 531-533, Oct. 2011.<o:p></o:p></span></span></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span class=style201><span style='font-size:12.0pt;mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[4]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span></span><![endif]><span class=style201><span style='font-size:12.0pt'>M. Tsai and S. Hsu <a href="journal%20papers/MWCL_K%20band_ESD%20RF%20junction%20varactor%20LNA_2011.pdf"> A 24-GHz low-noise amplifier using RF junction <span class=SpellE>varactors</span> for noise optimization and CDM ESD protection in 90-</a><a href="journal%20papers/MWCL_K%20band_ESD%20RF%20junction%20varactor%20LNA_2011.pdf">nm CMOS, </a> <i style='mso-bidi-font-style:normal'>IEEE Microwave and Wireless Component <span class=SpellE>Lett</span></i>., vol. 21, no. 7, pp. 374-376, July 2011.<o:p></o:p></span></span></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span style='font-size:12.0pt;mso-bidi-font-size:4.5pt;mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[5]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span class=style201><span style='font-size: 12.0pt'>W. Cho and S. Hsu, <a href="journal%20papers/MWCL_ultra%20low%20power%2024%20GHz%20LNA.pdf"> An ultra-low-power 24 GHz low-noise amplifier using 0.13 <span class=SpellE>¼m</span> CMOS technology, </a> <i style='mso-bidi-font-style:normal'>IEEE Microwave and<span style='mso-spacerun:yes'>  </span>Wireless Component <span class=SpellE>Lett</span>.</i>, vol. 20, no. 12, pp. 681-683, Dec. 2010.</span></span></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span class=style201><span style='font-size:12.0pt;mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[6]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-size:12.0pt'>M. Tsai, S. Hsu, F. <span class=SpellE>Hsueh</span>, and C. <span class=SpellE>Jou</span> , &quot;<a href="journal%20papers/TMTT_ESD_LNA_65%20nm%20CMOS.pdf">A multi-ESD-path low-noise amplifier with a 4.3-A TLP current level in 65-nm CMOS,</a>&quot; <span class=style201><i>IEEE Trans. Microwave Theory Tech., </i><span style='mso-bidi-font-style:italic'>vol. 58, no. 12, pp. 4004-4011, Dec. 2010.</span><o:p></o:p></span></span></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; mso-list:l0 level1 lfo4;tab-stops:21.95pt'><![if !supportLists]><span style='font-size:12.0pt;mso-bidi-font-size:4.5pt;mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[7]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span class=style201><span style='font-size: 12.0pt'>P. Chang and S. Hsu<span class=GramE>, &nbsp;</span><a href="journal%20papers/TMTT_compact%200.1%20to%2014%20GHz%20UWB%20LNA.pdf">&quot;A compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-¼m CMOS,&quot;</a> <i>IEEE </i></span></span><i><span style='font-size:12.0pt'>Trans.</span></i></p> <p class=style16 style='margin-left:21.95pt;text-indent:-21.95pt; tab-stops:21.95pt'><i>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; </i><i><span style='font-size:12.0pt'>&nbsp;<span style='mso-spacerun:yes'>  </span>Microwave Theory Tech., </span></i><span class=style201><span style='font-size:12.0pt'>vol. 58, no. 10, pp. 2575-2581, Oct. 2010.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 21.95pt;margin-bottom:.0001pt;text-indent:-21.95pt;mso-list:l0 level1 lfo4; tab-stops:21.95pt'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[8]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>W. Chang, K. Tan, and S. Hsu, <a href="journal%20papers/MWCL_56_72%20GHz%20divider.pdf">&quot;A 56.5-72.2 GHz transformer-injection Miller frequency divider in 0.13 <span class=SpellE>¼m</span> CMOS,&quot;</a> <em><span style='font-family:"Arial","sans-serif"'>IEEE Microwave</span></em></span> <em><span style='font-family:"Arial","sans-serif"'>and Wireless Component Letters</span></em><span class=style201><span style='font-family:"Arial","sans-serif"'>, vol. 20, no. 7, pp. 393-395, July, 2010. </span><o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 21.95pt;margin-bottom:.0001pt;text-indent:-21.95pt;mso-list:l0 level1 lfo4; tab-stops:21.95pt'><![if !supportLists]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[9]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>T. Lin, P. Chang, H. <span class=SpellE>chiu</span>, M. Hong, J. <span class=SpellE>Kwo</span>, Y. Lin, and S. Hsu, <a href="journal%20papers/JVTB_GaAs%20MOSFETs.pdf">&quot;DC and RF characteristics of self-aligned inversion-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs using MBE-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub>(Gd<sub>2</sub>O<sub>3</sub>) as gate dielectrics,&quot;</a><em><span style='font-family:"Arial","sans-serif"; font-style:normal'> </span></em><em><span style='font-family:"Arial","sans-serif"'>J. Vacuum Science and Technology</span></em> B, <span class=style261>28(3), May/Jun, C3H14 (2010). </span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 21.95pt;margin-bottom:.0001pt;text-indent:-21.95pt;mso-list:l0 level1 lfo4; tab-stops:21.95pt'><![if !supportLists]><em><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:Arial;font-style:normal'><span style='mso-list: Ignore'>[10]<span style='font:7.0pt "Times New Roman"'> </span></span></span></em><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Chang, W. Chang, Y. H. Chang, J. <span class=SpellE>Kwo</span>, Y. Lin, S. Hsu, J. Hong, C. Tsai, and M. Hong, <a href="journal%20papers/J%20Microelectronic_GaN%20HfO2%20dielectric.pdf">&quot;Drain current enhancement and negligible current collapse in <span class=SpellE>GaN</span> MOSFETs with atomic-layer-deposited HfO<sub>2</sub> as a gate dielectric,&quot;</a> <em><span style='font-family:"Arial","sans-serif"'>J. Microelectronic Engineering</span></em>,<em><span style='font-family:"Arial","sans-serif"'> </span></em>87(2010)</span> <span class=style261>2042-2045.</span><em><span style='font-style:normal'><o:p></o:p></span></em></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 21.95pt;margin-bottom:.0001pt;text-indent:-21.95pt;mso-list:l0 level1 lfo4; tab-stops:21.95pt'><![if !supportLists]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[11]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Lin, Y. <span class=SpellE>Lian</span>, and S. Hsu, <a href="journal%20papers/EDL_GaN_high%20on%20off%20ratio.pdf">&quot;<span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs with low leakage current and high on/off current ratio,&quot;</a> <em><span style='font-family:"Arial","sans-serif"'>IEEE Electron<span style='mso-spacerun:yes'>  </span>Device</span></em></span> <em><span style='font-family:"Arial","sans-serif"'>Letters, </span></em><span class=style201><span style='font-family:"Arial","sans-serif"'>vol. 31, no. 2, pp. 102-104, Feb. 2010.</span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 21.95pt;margin-bottom:.0001pt;text-indent:-21.95pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[12]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Lin, J. Wu, C. Chan, S. Hsu, C. Huang, and T. Lee, <a href="journal%20papers/TED_square%20gate%20GaN%20Hemts.pdf"> Square-gate <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs with improved trap-related characteristics, </a><em><span style='font-family:"Arial","sans-serif"'>IEEE Trans. Electron Devices</span></em>, <span class=SpellE>vol</span> 56, no. 12, pp. 3207-3211, Dec. 2009.</span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[13]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>M. Tsai, S. Hsu, F. <span class=SpellE>Hsueh</span>, C. <span class=SpellE>Jou</span>, S. Chen, and M. Song, <u><a href="journal%20papers/MWCL_ESD_LNA_65nm.pdf"> A wideband low noise amplifier with 4 kV HBM ESD protection in 65 nm</a></u></span><u> </u><u><span style='font-family:"Arial","sans-serif"'><a href="journal%20papers/MWCL_ESD_LNA_65nm.pdf">RF</a> <a href="journal%20papers/MWCL_ESD_LNA_65nm.pdf">CMOS, </a></span></u><span style='font-family:"Arial","sans-serif"'> <i>IEEE Microwave and Wireless Component Letters</i>, vol. 19, no. 11, pp. 734-736, Nov. 2009.&nbsp;</span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[14]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu, <a href="journal%20papers/MOTL_LNA.pdf"> A K-band low-noise amplifier in 0.18-¼m CMOS technology for sub-1-V operation, </a> <i>Microwave Optical</i></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt'><i><span style='font-family:"Arial","sans-serif"'>Technology Letters</span></i><span style='font-family:"Arial","sans-serif"'>, <span class=style201>vol. 51, no. 9, pp. 2202-2204, 2009.</span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[15]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>M. Kao, J. Wu, C Lin, F. Chen, C. Chiu, and S. Hsu, <a href="journal%20papers/VLSI_10GB_CML.pdf"> A 10-Gb/s CML I/O circuit for backplane interconnection in 0.18-¼m CMOS technology, </a> <i>EEE Trans. VLSI Systems</i>, vol. 17, no. 5, pp. 688-696, May 2009.</span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[16]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Wu, S. Hsu, K. Tan, and Y. Su, <a href="journal%20papers/EDL_substrate%20noise_VCO.pdf">&quot;Substrate noise coupling reduction in LC voltage-controlled oscillators,&quot;</a> <i>IEEE Electron Device</i></span> <i><span style='font-family:"Arial","sans-serif"'>Letters</span></i><span style='font-family:"Arial","sans-serif"'>, <span class=style201>vol. 30, no. 4, pp. 383-385, Apr. 2009.</span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[17]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Wei, S. Hsu, and J. Jin, <a href="journal%20papers/MWCL_kband_LNA.pdf">&quot;A low-power low-noise amplifier for K-band applications,&quot;</a> <i>IEEE Microwave and Wireless Component</i></span> <span class=SpellE><i><span style='font-family:"Arial","sans-serif"'>Lett</span></i></span><i><span style='font-family:"Arial","sans-serif"'>.</span></i><span style='font-family:"Arial","sans-serif"'>, <span class=style201>vol. 19, no. 2, pp. 116-118, Feb. 2009.</span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[18]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu, <a href="journal%20papers/PTL_10Gb%2075dBohm%20TIA.pdf">&quot;A 75-dB© 10-Gb/s <span class=SpellE>transimpedance</span> amplifier in 0.18-¼m CMOS technology,&quot;</a> <i>IEEE Photon. Tech. <span class=SpellE>Lett</span>., </i><span class=style201>vol. 20<span class=GramE>,<span style='font-family:"Times New Roman","serif"'><span style='mso-spacerun:yes'>  </span></span>no</span>. 24, pp. 2177-2179, Dec. 2008.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[19]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu, <a href="journal%20papers/TMTT_70GHz%20broadband%20amplifier.pdf">&quot;A miniaturized 70-GHz broadband amplifier in 0.13-µm CMOS technology,&quot; </a><i>IEEE Trans. Microwave Theory</i></span> <i><span style='font-family:"Arial","sans-serif"'>Tech., </span></i><span class=style201><span style='font-family:"Arial","sans-serif"'>vol. 56, no. 12, pp. 3086-3092, Dec. 2008.</span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[20]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>C. Chan, S. Chen, M. Tsai, and S. Hsu, <a href="journal%20papers/EDL_65nm_NMOS.pdf">&quot;Wiring effect optimization in 65-nm low-power NMOS,&quot;</a> <i>IEEE</i> <i>Electron Device Letters, </i>vol.</span> <span style='font-family:"Arial","sans-serif"'>29, no. 11, pp. 1245-1248, Nov. 2008.</span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[21]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>C. Chan, Y. Huang, J. Chen, S. Hsu, and Y. <span class=SpellE>Juang</span>, <a href="journal%20papers/SSE_STI_Gate%20flicker%20noise.pdf">&quot;STI-to-gate distance effects on flicker noise characteristics in 0.13-</a><a href="journal%20papers/JSSC_40G_TIA.pdf">µm</a></span><a href="journal%20papers/SSE_STI_Gate%20flicker%20noise.pdf"><span class=style201><span style='font-family:"Arial","sans-serif"'> CMOS,&quot; </span></span></a><span class=style191><span style='font-family:"Arial","sans-serif"'>J. Solid-State Electronics</span></span><span class=style201><span style='font-family:"Arial","sans-serif"'>, vol. 52, pp. 1182-1187, 2008.&nbsp; </span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[22]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu, <a href="journal%20papers/JSSC_40G_TIA.pdf"> A 40-Gb/s <span class=SpellE>transimpedance</span> amplifier in 0.18-µm CMOS technology, </a> <i>IEEE J. Solid-State Circuits, </i>vol. 43, no. 6,</span> <span style='font-family:"Arial","sans-serif"'>pp. 1449-1457, June, 2008.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[23]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin, S. Hsu, T. <span class=SpellE>Yeh</span>, M. Yang, and S. Liu, <a href="journal%20papers/JJAP_110G_Cu_interconnect.pdf"> Fully analytical modeling of Cu interconnects up to 110 GHz, </a> <span class=SpellE><i>Jpn</i></span><i>. Journal of Appl.</i></span> <i><span style='font-family:"Arial","sans-serif"'>Physics</span></i><span style='font-family:"Arial","sans-serif"'>, <span class=style201>vol. 47, no. 4, pp. 2473-2476, Apr. 2008.</span></span><span class=style201><o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[24]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu, <a href="journal%20papers/TMTT_50%20GHz%20BA.pdf"> A 1-V, 45-GHz balanced amplifier with 21.5-dB gain using 0.18-¼m CMOS technology, </a> <i>IEEE Trans. Microwave</i></span> <i><span style='font-family:"Arial","sans-serif"'>Theory <span class=style191>Tech</span></span></i><span class=style201><span style='font-family:"Arial","sans-serif"'>., vol. 56, no. 3, pp. 599-603, March 2008.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[25]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin and S. Hsu,  <a href="journal%20papers/JSSC_24GHz%20BA.pdf">A 0.18-¼m CMOS balanced amplifier for 24-GHz applications,</a> <i>IEEE J. Solid-State Circuits</i>, vol. 43, no. 2, pp.&nbsp;440-445, <span class=style201>Feb. 2008. <o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[26]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>C. Chan, Y. Lin, J. Jin, S. Hsu, Y. Huang, and Y. <span class=SpellE>Juang</span>, <a href="journal%20papers/TED_Impact%20of%20STI%20of%20flicker%20noise.pdf"> Impact of STI effect on flicker noise in 0.13-µm RF N-MOSFETs, </a> <i>IEEE Trans. <span class=style191>Electron Devices</span></i><span class=style201>, Vol. 54, No. 12, pp. 3383-3392, Dec., 2007. <o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[27]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>H. Lin, S. Hsu, C. Chan, and Y. Lin, <a href="journal%20papers/CASII_LMDS%20divider.pdf"> A wide locking-range frequency divider for LMDS applications, </a> <i>IEEE Trans. Circuits</i></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt'><span class=GramE><span class=style191><span style='font-family:"Arial","sans-serif"'>and</span></span></span><span class=style191><span style='font-family:"Arial","sans-serif"'> Systems II, </span></span><span class=style201><span style='font-family:"Arial","sans-serif";color:black'>Vol. 54, No. 9, pp. 750-754, Sep. 2007.</span><span style='color:black'><o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[28]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Lin, S. Koa, C. Chan, S. Hsu, H. Lee, and S. <span class=SpellE>Gwo</span>, <a href="journal%20papers/APL_InN%20MISFET.pdf">&quot;High current density <span class=SpellE>InN</span>/<span class=SpellE>AlN</span> <span class=SpellE>heterojunction</span> field-effect transistor with a <span class=SpellE>SiN<sub>x</sub></span> gate dielectric layer,&quot;</a> <i>Applied Physics Letters</i> <span class=style201>90, 142111, 2007.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[29]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>C. Chan, T. Lee, S. Hsu, L. Chen, and Y. Lin, <a href="journal%20papers/JJAP_Gate%20recess%20GaN%20Hemt.pdf"> Impacts of gate recess and passivation on <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs, </a> <span class=SpellE><i>Jpn</i></span><i>. Journal of Appl. <span class=style191>Physics, </span></i><span class=style201>Vol. 46, No. 2, pp. 478-484, Feb. 2007.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[30]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>T. Lee, C. Chan, P. Tsai, S. Hsu, J. <span class=SpellE>Kwo</span>, and M. Hong,  <a href="journal%20papers/JCG_GaAs%20MOSFET%20traps.pdf">Interfacial trap characteristics in depletion mode <span class=SpellE>GaAs</span> MOSFET s,</a> <i>Journal</i></span> <i><span style='font-family:"Arial","sans-serif"'>of <span class=style191>Crystal Growth, </span></span></i><span class=style201><span style='font-family:"Arial","sans-serif"'>Vol. 301-302, April 2007, pp. 1009-1012.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[31]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>Y. Lin, S. Hsu, J. Jin, and C. Chan, <a href="journal%20papers/MWCL_A%203.1-10.6%20GHz%20UWB%20CMOS%20LNA%20with%20current-reused%20technique.pdf"> A 3.1 10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique, </a> <i>IEEE</i></span> <span class=style191><span style='font-family:"Arial","sans-serif"'>Microwave and Wireless Component Letters</span></span><span class=style201><span style='font-family:"Arial","sans-serif"'>, vol. 17, No. 3, Mar. 2007.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[32]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. Jin, S. Hsu, M. T. Yang, and S. Liu, <a href="journal%20papers/TMTT_low%20loss%20differential%20semicoaxial%20interconnect%20in%20CMOS%20process.pdf"> Low-loss differential semi-coaxial interconnects in CMOS process, </a> <i>IEEE Trans. Microwave</i></span> <span class=style191><span style='font-family: "Arial","sans-serif"'>Theory Tech.</span></span><span class=style201><span style='font-family:"Arial","sans-serif"'>, vol. 54, no. 12, pp. 4333-4340, Dec. 2006.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[33]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>S. Hsu, H. Zhu, <a href="journal%20papers/MWCL_W-band%20ring%20resonator.pdf"> W-band multiple-ring resonator by standard 0.18-um CMOS technology, </a> <i>IEEE Microwave and Wireless</i></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt'><i><span style='font-family:"Arial","sans-serif"'>Component <span class=SpellE><span class=GramE><span class=style191>Lett</span></span></span><span class=GramE><span class=style191>.</span><span class=style201><span style='font-style:normal'>,</span></span></span></span></i><span class=style201><span style='font-family:"Arial","sans-serif"'> pp. 832-834, Dec. 2005.<o:p></o:p></span></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[34]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>J. A. <span class=SpellE>Yeh</span>, C. A. Chang, C. -C. Cheng, J. -Y. Huang, and S. Hsu, <a href="journal%20papers/EDL_liquid%20crystal%20capacitor.pdf"> Microwave characteristics of liquid crystal tunable capacitors, </a> <i>IEEE <span class=style191>Electron Device <span class=SpellE>Lett</span>.</span></i><span class=style201>, vol. 26, pp. 451-453, July 2005.</span></span><span class=style201><o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[35]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>S. Hsu and D. <span class=SpellE>Pavlidis</span>, <a href="journal%20papers/TED_comparison%20of%20LF%20noise%20InP%20NPN%20and%20PNP%20HBTs.pdf"> A comparison of low-frequency noise characteristics and noise origins in <span class=SpellE>InP</span>-based NPN and PNP <span class=SpellE>heterojunciton</span> bipolar transistors, </a> <i style='mso-bidi-font-style:normal'>IEEE Trans. Electron Devices</i>, vol. 50, no. 9, pp. 1974-1982, Sep. 2003.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span class=style201><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: Arial'><span style='mso-list:Ignore'>[36]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, and D. <span class=SpellE>Sawdai</span>, <a href="journal%20papers/EDL_LFN%20of%20pnp%20InP%20HBTs.pdf"> Low-frequency noise characteristics of PNP <span class=SpellE>InAlAs</span>/<span class=SpellE>InGaAs</span> HBTs, </a> <i>IEEE Electron Device&nbsp;Letters</i>,&nbsp;vol. <span class=style201>23, no. 12, pp. 688-690, Dec. 2002.</span></span><span class=style201><o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[37]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. Cui, D. <span class=SpellE>Pavlidis</span>, S. Hsu, and A. <span class=SpellE>Eisenbach</span>, <a href="journal%20papers/TED_comparison%20zinc%20and%20carbon%20doped%20InP%20HBTs.pdf"> Comparison of DC, high-frequency performance of zinc-doped and carbon-doped <span class=SpellE>InP</span>/<span class=SpellE>InGaAs</span> HBTs grown by <span class=SpellE>metalorganic</span> chemical vapor deposition, </a> <i>IEEE Trans. Electron Devices</i>, vol. 49, no. 5, pp. 725-732,</span> <span style='font-family:"Arial","sans-serif"'>May, 2002.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[38]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. Cui, D. <span class=SpellE>Pavlidis</span>, S. Hsu, D. <span class=SpellE>Sawdai</span>, P. Chin, and T. Block, <a href="journal%20papers/EDL_InP%20HBT%20amplifier%20with%20PNP%20active%20load.pdf"> First demonstration of monolithic <span class=SpellE>InP</span>-based HBT amplifier with PNP active load, </a> <i>IEEE Electron Device Letters</i>, vol. 23, no. 3, pp. 114-117, Mar. 2002.</span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[39]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. Cui, S. Hsu, and D. <span class=SpellE>Pavlidis</span>, <a href="journal%20papers/JJAP_InP%20HBTs.pdf"> DC and high frequency characterization of <span class=SpellE>Metalorganic</span> Chemical Vapor Deposition (MOCVD) grown <span class=SpellE>InP</span>/<span class=SpellE>InGaAs</span> PNP <span class=SpellE>heterojunction</span> bipolar transistor, </a> <span class=SpellE><i>Jpn</i></span><i>. J. of Appl. Phys.</i> Vol. 41, no. 2B, pp. 1143-1149, Feb, 2002.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[40]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. Cui, S. Hsu and D. <span class=SpellE>Pavlidis</span>, <a href="journal%20papers/SSE_Ka_band%20InAlAs%20oscillator.pdf"> <span class=SpellE>Ka</span>-band oscillators using <span class=SpellE>InP</span>-based HBTs, </a> <i style='mso-bidi-font-style:normal'>J. of Solid-State Electronics</i>, vol. 46, no. 2, pp. 249-253, Feb. 2002. <o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[41]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. <span class=SpellE>Buttari</span>, A. <span class=SpellE>Chini</span>, G. <span class=SpellE>Meneghesso</span>, E. <span class=SpellE>Zanoni</span>, D. <span class=SpellE>Sawdai</span>, D. <span class=SpellE>Pavlidis</span>, and S. Hsu <a href="journal%20papers/EDL_Impact%20ionization%20coefficient%20pnp%20HBTs.pdf"> Measurements of the <span class=SpellE>InGaAs</span> hole impact ionization coefficient in <span class=SpellE>InAlAs</span>/<span class=SpellE>InGaAs</span> <span class=SpellE>pnp</span> HBTs, </a> <i>IEEE Electron Device Letters</i>, vol. 22, no. 5, pp. 197-199, May. 2001.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[42]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>D. <span class=SpellE>Sawdai</span>, K. Yang, S. Hsu, D. <span class=SpellE>Pavlidis</span>, and G. Haddad, <a href="journal%20papers/TMTT_power%20performance%20InP%20single%20and%20double%20HBTs.pdf"> Power performance of <span class=SpellE>InP</span>-Based single- and double-<span class=SpellE>heterojunction</span><span style='mso-spacerun:yes'>  </span>bipolar transistors, </a> <i>IEEE Trans. Microwave Theory Tech.</i>, vol. 47, pp. 1449-1456, Aug. 1999.<o:p></o:p></span></p> <p style='margin-top:0in;margin-right:0in;margin-bottom:0in;margin-left: 26.45pt;margin-bottom:.0001pt;text-indent:-26.45pt;mso-list:l0 level1 lfo4'><![if !supportLists]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:Arial'><span style='mso-list:Ignore'>[43]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"'>S. Hsu, B. <span class=SpellE>Bayraktaroglu</span>, and D. <span class=SpellE>Pavlidis</span>, <a href="journal%20papers/SSE_TSC%20GaAs%20HBTs.pdf"> Comparison of conventional and Thermally-Stable <span class=SpellE>Cascode</span> (TSC) <span class=SpellE>AlGaAs</span>/<span class=SpellE><span class=GramE>GaAs</span></span><span class=GramE><span style='mso-spacerun:yes'>  </span>HBTs</span> for microwave power applications, </a> <i>Journal of Solid-State Electronics</i>, vol. 43, no. 8, pp. 1429-1436, 1999.</span>&nbsp;</p> <p class=style16>&nbsp;</p> </td> </tr> <tr style='mso-yfti-irow:22;height:24.75pt'> <td colspan=5 style='padding:0in 0in 0in 0in;height:24.75pt'> <p class=MsoNormal><span lang=ZH-TW style='font-family:"°e0}fÔš","serif"; mso-bidi-font-family:°e0}fÔš'>0</span><span style='mso-fareast-font-family: "Times New Roman"'><o:p></o:p></span></p> </td> </tr> <tr style='mso-yfti-irow:23'> <td colspan=5 style='padding:0in 0in 0in 0in'> <p class=MsoNormal><b><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:#006600'>Conference papers</span></b><b><span style='mso-fareast-font-family:"Times New Roman"'><o:p></o:p></span></b></p> </td> </tr> <tr style='mso-yfti-irow:24;mso-yfti-lastrow:yes;height:24.75pt'> <td colspan=5 style='background:#FFFFCC;padding:0in 0in 0in 0in;height: 24.75pt'> <p class=MsoListParagraphCxSpFirst style='margin-left:20.1pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-20.1pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[1]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Chang, D. Chang, S. Hsu, J. Lee, S. Lin, and Y. <span class=SpellE>Juang</span>,  A matrix-computation based methodology for extracting the S-Parameters of interconnects in advanced packaging technologies, accepted for Asia-Pacific Microwave Conference 2011.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:20.1pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-20.1pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[2]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Chang, S. Hsu, D. Chang, J. Lee, S. Lin, and Y. <span class=SpellE>Juang</span>,  A de-embedding method for extracting S-parameters of vertical interconnect in advanced packing, accepted for EPEPS 2011.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:20.15pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-20.15pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[3]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Yu, C. Huang, P. Chu, K. Chen, S. Hsu, H. Chiu, and F. Zhao,  High-voltage <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs on Si substrate with implant isolation, accepted for <i style='mso-bidi-font-style: normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, Nagoya, Sep. 2011.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:20.1pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-20.1pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[4]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Lin, Y. <span class=SpellE>Lian</span>, H. Lu, Y. Huang, and S. Hsu,  <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs on silicon with hybrid <span class=SpellE>schottky-ohmic</span> drain for improved DC characteristics, accepted for <i style='mso-bidi-font-style: normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, Nagoya, Sep. 2011. <o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:20.1pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-20.1pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[5]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Wang, T. Huang, Y. Wu, S. Hsu, Z. Lin, C. Lin, S. <span class=SpellE>Sheu</span>, T. Ku, and C. Lin,  <span class=SpellE>Testkey</span> design of through silicon <span class=SpellE>vias</span> (TSVs) for accurate de-embedding and RF model parameters extraction, accepted for <i style='mso-bidi-font-style:normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, Nagoya, Sep. 2011. <o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[6]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>M. <span class=SpellE>Tasi</span>, S. Hsu, T. <span class=SpellE>Yeh</span>, J. Jin, H. <span class=SpellE>Hsueh</span>, C. <span class=SpellE>Jou</span>, and F. <span class=SpellE>Hsueh</span>,  A 24-GHz low-noise amplifier co-designed with ESD protection using junction <span class=SpellE>varactors</span> in 65-nm RF CMOS, to be presented in <i style='mso-bidi-font-style:normal'>IEEE Int. Microwave Symposium</i>, Baltimore, June 2011.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.25pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.25pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[7]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>F. Chen, M. Kao, Y. Hsu, C. Lin, J. Wu, C. Chiu, and S. Hsu,  A 10 to 11.5 GHz rotational phase and frequency detector for clock recovery circuit, to be presented in <i style='mso-bidi-font-style:normal'>IEEE Int. <span class=SpellE>Symp</span>. Circuits and Systems (ISCAS)</i>, Rio de Janeiro, May 2011 (Best Student Paper Contest Finalist)<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.25pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.25pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[8]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>M. <span class=SpellE>Tasi</span>, S. Hsu, F. <span class=SpellE>Hsueh</span>, C. <span class=SpellE>Jou</span>, M. Song, J. Tseng, T. Chang, and D. Nag,  An analog front-end circuit with dual-directional SCR ESD protection for UHF-band passive RFID Tag, to be presented in <i style='mso-bidi-font-style: normal'>IEEE Int. Conf. RFID</i>, Orlando, pp. 206-209, April 2011.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[9]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. <span class=SpellE>Luo</span>, Y. Wu, J. Wang, and S. Hsu, <a href="conference%20papers/SSDM_2010_3DIC.pdf"> RF modeling of through silicon <span class=SpellE>vias</span> (TSVs) in 3D IC, </a> <i style='mso-bidi-font-style:normal'>Proc. Int. Conf. on Solid State Devices and Materials (SSDM),</i> pp. 239-240, Tokyo, Sep. 2010.<i style='mso-bidi-font-style:normal'><o:p></o:p></i></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[10]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>C. Hsiao, W. Wang, T. Su, Y. Wu, and S. Hsu, <a href="conference%20papers/SSDM_2010_90nm_DA.pdf"> A gate-drain coupling distributed amplifier in 90-nm CMOS technology, </a> <i style='mso-bidi-font-style: normal'>Proc.</i> <i style='mso-bidi-font-style:normal'>Int. Conf. on Solid State Devices and Materials (SSDM), </i>pp. 810-811, Tokyo, Sep. 2010.<i style='mso-bidi-font-style:normal'><o:p></o:p></i></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[11]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>W. Tsai, C. Chiu, J. Wu, S. Hsu, and Y. Hsu, <a href="conference%20papers/ISCAS_2010_MuxFF%20for%20serdes.pdf"> A novel MUX-FF circuit for low power and high speed serial link interfaces, </a> <i style='mso-bidi-font-style:normal'>IEEE Int. <span class=SpellE>Symp</span>. Circuits and Systems (ISCAS)</i>, pp. 4305-4308, Paris, May 2010.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:22.4pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-22.5pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[12]<span style='font:7.0pt "Times New Roman"'>&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Hsu, M. Kao, F. Chen, C. Chiu, J. Wu, and S. Hsu, <a href="conference%20papers/ISCAS_2010_4x4_IC.pdf"> A 32Gbps low propagation delay 4<span style='font-family:Symbol;mso-ascii-font-family:"Times New Roman"; mso-hansi-font-family:"Times New Roman";mso-bidi-font-family:"Times New Roman"; mso-char-type:symbol;mso-symbol-font-family:Symbol'><span style='mso-char-type: symbol;mso-symbol-font-family:Symbol'>´</span></span>4 switch IC for feedback-based system in 0.13 µm CMOS technology, </a> <i style='mso-bidi-font-style: normal'>IEEE Int. <span class=SpellE>Symp</span>. Circuits and Systems (ISCAS)</i>, pp. 581-584, Paris, May 2010.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[13]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>M. <span class=SpellE>Tasi</span>, F. <span class=SpellE>Hsueh</span>, C. <span class=SpellE>Jou</span>, M. Song, J. Tseng, S. Hsu, and S. Chen, <a href="conference%20papers/MTTs_2010_ESD_LNA_65nm.pdf"> <span style='mso-bookmark:OLE_LINK243'><span style='mso-bookmark:OLE_LINK242'>A 6.5 kV ESD-protected low noise amplifier in 65-nm CMOS</span></span>, </a><![if !supportNestedAnchors]><a name="OLE_LINK242"></a><a name="OLE_LINK243"></a><![endif]> <i style='mso-bidi-font-style:normal'>IEEE MTT-S Int. Microwave <span class=SpellE>Symp</span></i>. <i style='mso-bidi-font-style:normal'>Dig.</i>, pp.485-488, Anaheim, May 2010.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[14]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>S. Hsu and J. Jin, <a href="conference%20papers/ISMOT_2009_CMOS%20amplifier%20for%20optical%20communcations.pdf"> <span style='mso-bookmark:OLE_LINK86'><span style='mso-bookmark:OLE_LINK85'>CMOS broadband amplifiers for optical communications</span></span>, </a><![if !supportNestedAnchors]><a name="OLE_LINK85"></a><a name="OLE_LINK86"></a><![endif]> <i style='mso-bidi-font-style:normal'>Int. <span class=SpellE>Symp</span>. Microwave and Optical Technology</i>, New Delhi, India, </span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'>pp. 1251-1254, </span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Dec. 2009 (invited).<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:21.7pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-21.7pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[15]<span style='font:7.0pt "Times New Roman"'> </span></span></span><![endif]><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>Y. Lin, Y. <span class=SpellE>Lian</span>, S. Hsu, and T. Lee,  Low leakage <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs with a high On/Off current ratio, <i style='mso-bidi-font-style: normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, Miyagi, Oct. 2009.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[16]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. <span class=SpellE>Lian</span>, Y. Lin, and S. Hsu,  High breakdown <span class=SpellE>GaN</span> <span class=SpellE>Schottky</span> diodes with buried P-layer structure, <i style='mso-bidi-font-style:normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, Miyagi, Oct. 2009.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[17]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>M. <span class=SpellE>Tasi</span>, S. Hsu, and K. Tan, <a href="conference%20papers/MTT_2009_ESD_LNA.pdf"> A low noise amplifier co-designed with ESD protection circuit in 65-nm CMOS, </a> <i style='mso-bidi-font-style:normal'>IEEE MTT-S Int. Microwave <span class=SpellE>Symp</span>. Dig.</i>, pp. 573-576, Boston, June 2009.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[18]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu,  <a name="OLE_LINK40"></a><a name="OLE_LINK39"><span style='mso-bookmark:OLE_LINK40'>Design techniques for CMOS broadband amplifiers</span></a>, <i style='mso-bidi-font-style: normal'>CMOS Emerging Technologies Workshops</i>, Banff, Feb. 2009 (invited).<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[19]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Lin, J. Wu, S. Hsu, C. Chan, and Y. <span class=SpellE>Lian</span>,  <span class=SpellE>GaN</span>-based <span class=SpellE>Schottky</span> <span class=SpellE>varactors</span> for high-power RF applications, <i style='mso-bidi-font-style:normal'>Proc.</i> <i style='mso-bidi-font-style:normal'>Int. Conf. on Solid State Devices and Materials (SSDM)</i>, pp. 506-507, Ibaraki, Sep. 2008.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[20]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Jin and S. Hsu, <a href="conference%20papers/MTT_2008_70G%20WB%20amplifier.pdf"> A 70-GHz transformer-peaking broadband amplifier in 0.13-¼m CMOS technology, </a> <i style='mso-bidi-font-style:normal'>IEEE MTT-S Int. Microwave <span class=SpellE>Symp</span>. Dig.</i>, Atlanta, pp. 285-288, June 2008.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[21]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Jin and S. Hsu, <a href="conference%20papers/SSDM_2007_Wideband_TIA.pdf"> Wideband CMOS <span class=SpellE>transimpedance</span> amplifier design using transformer-peaking technique, </a><i style='mso-bidi-font-style:normal'> Proc. Int. Conf. on Solid State Devices and Materials (SSDM)</i>, pp. 492-493, Ibaraki, Sep. 2007.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[22]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Jin, S. Hsu, T. <span class=SpellE>Yeh</span>, M. Yang, S. Liu, <a href="conference%20papers/SSDM_2007_Interconnect_110GHz.pdf"> Fully analytical modeling of Cu interconnects up to 110 GHz, </a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'> </span><i style='mso-bidi-font-style:normal'><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>Proc. Int. Conf. on Solid State Devices and Materials(SSDM),</span></i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'> pp. 908-909, Ibaraki, Sep. 2007.<i style='mso-bidi-font-style: normal'><o:p></o:p></i></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[23]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Lin, T. Lee, Y. Wang, and S. Hsu, <a href="conference%20papers/SSDM_2007_Optim_HEMTs.pdf"> Layout optimization of <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs for high-power applications, <span style='mso-bookmark:OLE_LINK84'><span style='mso-bookmark:OLE_LINK83'></span></span></a><![if !supportNestedAnchors]><a name="OLE_LINK83"></a><a name="OLE_LINK84"></a><![endif]><span style='mso-bookmark:OLE_LINK84'><span style='mso-bookmark:OLE_LINK83'> <i style='mso-bidi-font-style:normal'>Proc. Int. Conf. on Solid State Devices and Materials (SSDM),</i></span></span> pp. 156-157, Ibaraki, Sep. 2007.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[24]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Wang, Y. Wu, S. Hsu, and C. Chan, <a href="conference%20papers/RFIC_2007_sub_noise.pdf"> Substrate coupling effect under various noise injection topologies in LC-voltage controlled oscillator, </a> <i>IEEE RFIC <span class=SpellE>Symp</span>., </i><span style='mso-bidi-font-style:italic'>pp. 705-708, </span>Hawaii, June 2007. <o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[25]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Chan, Y. Lin, Y. Huang, S. Hsu, and Y. <span class=SpellE>Juang</span>, <a href="conference%20papers/MTTS_2007_edge%20extended.pdf"> Edge-extended design for improved flicker noise characteristics in 0.13-µm RF NMOS, </a> <i>IEEE MTT-S Int. Microwave <span class=SpellE>Symp</span>., </i>pp. 441-444, Hawaii, June 2007</span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman"'>.<span style='color:black'><o:p></o:p></span></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[26]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Chiu, Y. Hsu, M. Kao, H. <span class=SpellE>Tzeng</span>, M. Du, P. Yang, M. Lu, F. Chen, H. Lin, J. Wu, S. Hsu, and Y. Hsu, <a href="conference%20papers/ISCAS_2007_scalable%20LB%20BvN%20switch.pdf"> <span style='mso-bidi-font-weight:bold'>A scalable load balanced <span style='mso-bookmark:OLE_LINK245'><span style='mso-bookmark:OLE_LINK246'><span class=SpellE>Birkhoff</span>-von Neumann </span></span>symmetric TDM switch IC for high-speed networking applications</span>, </a><![if !supportNestedAnchors]><a name="OLE_LINK246"></a><a name="OLE_LINK245"></a><![endif]> <i style='mso-bidi-font-style:normal'>IEEE Int. <span class=SpellE>Symp</span>. Circuits and Systems,</i> pp. 2754-2757, New Orleans, May 2007.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[27]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>L. Fan, S. Hsu, J. Jin, C. Hsieh, W. Lin, H. <span class=SpellE>Hao</span>, H. Cheng, K. <span class=SpellE>Hsueh</span>, and C. Lee, <a href="conference%20papers/ISSCC_2007_MRI.pdf"> Miniaturization of magnetic resonance microsystem components for 3D cell imaging, </a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'> </span><i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>IEEE Int. Solid-State Circuit Conf. (ISSCC)</span></i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>, San Francisco, pp. 166-168, Feb. 2007.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[28]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Y. Hsu, M. Kao, H. <span class=SpellE>Tzeng</span>, C. Chiu, J. Wu, </span><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:"Times New Roman"'>and S. Hsu, <span style='color:black'><a href="conference%20papers/AP_DAC_2007_20%20GBS%20LB%20BVN%20switch.pdf"> A 20Gbps scalable load balanced <span class=SpellE>Birkhoff</span>-von Neumann symmetric TDM switch IC with SERDES interfaces, </a> <a name="OLE_LINK82"></a><a name="OLE_LINK81"><span style='mso-bookmark:OLE_LINK82'><i style='mso-bidi-font-style:normal'>IEEE proc. 12th Asia and South Pacific Design Automation Conf</i></span></a><i style='mso-bidi-font-style:normal'>.,</i> pp. 23-26, Yokohama, Jan. 2007.<o:p></o:p></span></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[29]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Chan, P. Tsai, T. Lee, S. Hsu, J. <span class=SpellE>Kwo</span>, and M. Hong, <a href="conference%20papers/MBE_2006_GaAs%20MOSFET_flicker%20noise.pdf"> Flicker noise characteristics in <span class=SpellE>GaAs</span> MOSFETs, </a> <i>MBE conf.</i>, Durham, Sep. 2006.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[30]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Chan, J. Jin, Y. Lin, S. Hsu, and Y. <span class=SpellE>Juang</span>,  <a href="conference%20papers/ESSDERC_2006_STI%20effect.pdf">STI effect on flicker noise in 0.13-µm RF NMOS, </a> <i>European Solid-state Device Conference (ESSDERC)</i>, pp.101-104, <a name="OLE_LINK345"></a><a name="OLE_LINK344"><span style='mso-bookmark:OLE_LINK345'></span></a><span class=SpellE><span style='mso-bookmark:OLE_LINK344'><span style='mso-bookmark: OLE_LINK345'>Montreux</span></span></span><span style='mso-bookmark:OLE_LINK344'><span style='mso-bookmark:OLE_LINK345'>,</span></span> Sep. 2006.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[31]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Jin and S. Hsu,  <a href="conference%20papers/ESSCIRC_2006_40%20Gb_s%20TIA%20in%200.18%20um%20CMOS%20tech.pdf">40-Gb/s <span class=SpellE>transimpedance</span> amplifier in 0.18-µm CMOS technology, </a> <i>European Solid-state Circuit Conference (ESSCIRC)</i>, pp. 520-523, <span class=SpellE>Montreux</span>, Sep. 2006.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[32]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>J. Jin, S. Hsu, M. Yang, and S. Liu,  <a href="conference%20papers/MTT_2006_SC_interconnects.pdf">Low-loss single and differential semi-coaxial interconnects in standard CMOS process, <i>I</i></a><i>EEE MTT-S Int. Microwave <span class=SpellE>Symp</span>. Dig.</i>, pp. 420-423, San Francisco, June 2006. </span><span style='font-family:"Arial","sans-serif"; color:black'><o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[33]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Hsiao, M. Kao, C. Jen, Y. Hsu, P. Yang, C. Chiu, J. Wu, S. Hsu, and Y. Hsu,  <a href="conference%20papers/Mixed%20IC_2006_3.2Gb_s_20_1_multiplexer.pdf">3.2 <span class=SpellE>Gbit</span>/s CML transmitter with 20:1 multiplexer in 0.18-µm CMOS technology, </a> <a name="OLE_LINK374"></a><a name="OLE_LINK373"><span style='mso-bookmark:OLE_LINK374'><i>IEEE Int. Conf. Mixed Design of Integrated Circuits and Systems</i></span></a>, pp. 179-183, June 2006.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[34]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>X. Zhu, J. Wang, D. <span class=SpellE>Pavlidis</span>, and S. Hsu  <a name="OLE_LINK347"></a><a name="OLE_LINK346"><span style='mso-bookmark:OLE_LINK347'></span></a><span class=SpellE><span style='mso-bookmark:OLE_LINK346'><span style='mso-bookmark: OLE_LINK347'>InP</span></span></span><span style='mso-bookmark:OLE_LINK346'><span style='mso-bookmark:OLE_LINK347'>/<span class=SpellE>GaAsSb</span>/<span class=SpellE>InP</span> DHBT technology and its application to MM-wave integrated oscillators</span></span>, <i>proc. 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE)</i><span style='mso-bidi-font-style:italic'>, <span class=SpellE>Fiskebäckskil</span>, S. 51-53, May<i> 2006</i></span>.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[35]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. <span class=SpellE>Pavlidis</span>, P. <span class=SpellE>Valizadeh</span>, and S. Hsu, <a href="conference%20papers/emw2005_GaN%20Hemts%20reliability.pdf"> <span style='mso-bookmark:OLE_LINK396'><span style='mso-bookmark:OLE_LINK397'><span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> high electron mobility transistor (HEMT) reliability</span></span>, </a><![if !supportNestedAnchors]><a name="OLE_LINK397"></a><a name="OLE_LINK396"></a><![endif]> <i>European Microwave Conf.</i>, Paris, pp. 265-268, Oct. 2005.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[36]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>C. Chiu, J. Wu, S. Hsu, M. Kao, C. Jen, and Y. Hsu, <a href="conference%20papers/SOC_2005_10%20Gb_s_CML_IO.pdf"> A 10Gb/s wide-band current-mode logic I/O interface for high-speed interconnect in 0.18-µm CMOS technology, </a></span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:°e0}fÔš;color:black'> </span><i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>IEEE Int. SOC Conf.</span></i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>, pp. 257-260, Sep. 2005.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[37]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>L. Fan, W. Huang, C. Cheng, P. Chu, H. <span class=SpellE>Hao</span>, C. Hsieh, S. Hsu, A. Jin, K. <span class=SpellE>Hsueh</span>, C. Lee, J. Chang, E. Liu, A. Huang, C. <span class=SpellE>Chien</span>, A. <span class=SpellE>Yeh</span>, J. Chen, W. Wu, and C. Lai,  <a href="conference%20papers/transducer_magnetic%20resonance%20microsystem.pdf">Magnetic resonance Microsystems for life science applications, </a> <i>Proc. of Transducers 2005</i>, pp.1998-2001, Seoul, Korea, June 2005.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[38]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>X. Zhu, J. Wang, D. <span class=SpellE>Pavlidis</span>, and S. Hsu, <a href="conference%20papers/MTT_2005_InP%20HBT_TIA.pdf"> First demonstration of low-power monolithic <span class=SpellE>transimpedance</span> amplifier using <span class=SpellE>InP</span>/<span class=SpellE>GaAsSb</span>/<span class=SpellE>InP</span> DHBTs, </a></span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:°e0}fÔš;color:black'> </span><i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>IEEE MTT-S Int. Microwave <span class=SpellE>Symp</span>. Dig.</span></i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>, pp. 101-103, June 2005.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[39]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu and D. <span class=SpellE>Pavlidis</span>,  <a href="conference%20papers/GaAsIC_2003_GaN%20dispersion%20effects.pdf">Analysis and modeling of dispersion characteristics in <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> MODFETs, </a> <i>proc. 25th IEEE <span class=SpellE>GaAs</span> IC&nbsp;Symposium</i>, pp. 119-122, Nov. 2003.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[40]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. <span class=SpellE>Pavlidis</span>, S. M. Hubbard, S. Hsu and S. <span class=SpellE>Seo</span>  <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> and <span class=SpellE>AlN</span>/<span class=SpellE>GaN</span> <span class=SpellE>heterostructuredevices</span>: A possible device technology for high RF power wireless transmission 2003 <i style='mso-bidi-font-style:normal'>Japan-United States Joint Workshop on Space Solar Power System</i> (JUSPS'03), July, 2003, Kyoto, Japan<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[41]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>X. Zhu, S. Hsu and D. <span class=SpellE>Pavlidis</span>,  First microwave characteristics of <span class=SpellE>InGaAlAs</span>/<span class=SpellE>GaAsSb</span>/<span class=SpellE>InP</span> double HBTs, <i>Topical Workshop on <span class=SpellE>Heterostructure</span> Microelectronics for Information Systems Applications</i>, Okinawa, Japan, pp. 18-19, Jan. 2003.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[42]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. <span class=SpellE>Pavlidis</span>, S. Hubbard, S. Hsu and P. <span class=SpellE>Valizadeh</span></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'>,</span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>  <span class=SpellE>GaN</span> device and material considerations: A tutorial and general discussion <i style='mso-bidi-font-style:normal'>2002 <span class=SpellE>GaAs</span> REL Workshop</i>, Monterey, Oct. 2002.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[43]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, P. <span class=SpellE>Valizadeh</span>, D. <span class=SpellE>Pavlidis</span>, J. S. Moon, M. <span class=SpellE>Micovic</span>, D. Wong and T. <span class=SpellE>Hussain</span>, <a href="conference%20papers/GaAsIC%202002%20RF%20stress%20on%20GaN%20Hemt.pdf"> Impacts of RF stress on dispersion effects <span class=SpellE>andpower</span> characteristics for <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs, </a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: °e0}fÔš;color:black'> </span><i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>proc. 24th IEEE <span class=SpellE>GaAs</span> IC Symposium</span></i><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:"Times New Roman";color:black'>, pp. 85-88, 2002.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[44]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, J. S. Moon, M. <span class=SpellE>Micovic</span>, D. Wong and T. <span class=SpellE>Hussain</span>, <a href="conference%20papers/L_Eastman_2002_GaN%20flicker%20noise.pdf"> Characterization and analysis of gate and drain low-frequency noise in <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs<span style='mso-fareast-font-family:°e0}fÔš'>,</span> </a> <i>proc. IEEE Lester Eastman conference</i>, pp. 453-460, 2002.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[45]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, P. <span class=SpellE>Valizadeh</span>, D. <span class=SpellE>Pavlidis</span>, J. S. Moon, M. <span class=SpellE>Micovic</span>, D. Wong and T. <span class=SpellE>Hussain</span>, <a href="conference%20papers/emw2002_Large_signal%20linearity%20GaN%20Hemt.pdf"> Study on large-signal linearity and efficiency of <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> MODFETs, </a></span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:°e0}fÔš;color:black'> </span><i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>proceeding of 32nd European microwave conference</span></i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>, pp. 1-4, 2002.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[46]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, J. S. Moon, M. <span class=SpellE>Micovic</span>, D. Wong and T. <span class=SpellE>Hussain</span>,  Gate- and drain- noise characteristics of <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMTs and study of their origins, <i style='mso-bidi-font-style:normal'>proc. 26th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE)</i>,</span><a name="OLE_LINK75"></a><a name="OLE_LINK74"><span style='mso-bookmark:OLE_LINK75'><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:°e0}fÔš;color:black'> </span></span></a><span style='mso-bookmark:OLE_LINK74'><span style='mso-bookmark:OLE_LINK75'><span class=SpellE><span style='font-family:"Arial","sans-serif";mso-fareast-font-family: "Times New Roman";color:black'>Chernogolovka</span></span></span></span><span style='mso-bookmark:OLE_LINK74'><span style='mso-bookmark:OLE_LINK75'><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>, pp. 115-116, May 2002.</span></span></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'><o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[47]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. Cui, D. <span class=SpellE>Pavlidis</span>, S. Hsu, D. <span class=SpellE>Sawdai</span>, P. Chin and T. Block,  <span class=SpellE>InP</span>-based NPN-PNP HBT common collector push-pull monolithic integrated amplifiers, <i style='mso-bidi-font-style:normal'>proc. 26<sup>th</sup> Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE)</i>, <span class=SpellE>Chernogolovka</span>, pp. 147-148, May 2002.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[48]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, J. Moon, M. <span class=SpellE>Micovic</span>, C. Nguyen, and D. <span class=SpellE>Grider</span>, <a href="conference%20papers/GaAsIC_2001_Low%20noise%20GaN%20Hemts%20with%20high%20bk%20and%20power.pdf"> Low noise <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> MODFETs with high breakdown and power characteristics, </a><i>23rd IEEE <span class=SpellE>GaAs</span> IC Symposium</i>, pp. 229-232, </span><span style='font-family:"Arial","sans-serif";color:black'>Oct. </span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>2001.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[49]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, M. Ida, and T. <span class=SpellE>Enoki</span>,  <a href="conference%20papers/GaAsIC_2001_InP%20HBTs.pdf">Low noise, high-speed <span class=SpellE>InP</span>/<span class=SpellE>InGaAs</span> HBTs, </a> <i>23rd IEEE <span class=SpellE>GaAs</span> IC Symposium</i>, pp. 188-191,</span><span style='font-family:"Arial","sans-serif"; color:black'> Oct.</span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'> 2001.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[50]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Pavlidis</span>, J.S. Moon, M. <span class=SpellE>Micovic</span>, C. Nguyen, D. <span class=SpellE>Grider</span>,  <a name="OLE_LINK69"></a><a name="OLE_LINK66"><span style='mso-bookmark:OLE_LINK69'>High frequency noise studies in </span></a><span class=SpellE><span style='mso-bookmark: OLE_LINK66'><span style='mso-bookmark:OLE_LINK69'>AlGaN</span></span></span><span style='mso-bookmark:OLE_LINK66'><span style='mso-bookmark:OLE_LINK69'>/<span class=SpellE>GaN</span> MODFETs</span></span>, <i style='mso-bidi-font-style: normal'>proceeding of 25<sup>th</sup> Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (<a name="OLE_LINK71"></a><a name="OLE_LINK70"><span style='mso-bookmark:OLE_LINK71'>WOCSDICE</span></a>)</i>, <a name="OLE_LINK73"></a><a name="OLE_LINK72"><span style='mso-bookmark: OLE_LINK73'>Cagliari</span></a>, pp.147-148, May 2001.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[51]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. Cui, S. Hsu and D. <span class=SpellE>Pavlidis</span>,  <a href="conference%20papers/IPRM_2001_first_PNP%20HBT.pdf">First <span class=SpellE>InP</span>/<span class=SpellE>InGaAs</span> PNP HBT grown by metal organic chemical vapor deposition ,</a> <i>13th IEEE Int. Conf. Indium Phosphide and Related materials (IPRM 01)</i>, Nara, Japan, pp. 224-227, May 2001.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[52]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>E. Alekseev, S. Hsu, D. <span class=SpellE>Pavlidis</span>, T. Tsuchiya and M. <span class=SpellE>Kihara</span></span><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:°e0}fÔš;color:black'>,</span><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:"Times New Roman";color:black'>  <a name="OLE_LINK65"></a><a name="OLE_LINK64"><span style='mso-bookmark: OLE_LINK65'></span></a><a href="conference%20papers/emw2000_GaN_switch.pdf"><span style='mso-bookmark:OLE_LINK64'><span style='mso-bookmark:OLE_LINK65'>Broadband <span class=SpellE>AlGaN</span>/<span class=SpellE>GaN</span> HEMT MMIC attenuators with high dynamic range,</span></span> </a> <i>Proceeding of 30<sup>th</sup></i></span><i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'> </span></i><i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>European microwave conference</span></i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>, 2000.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[53]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. Cui, D. <span class=SpellE>Sawdai</span>, S. Hsu, D. <span class=SpellE>Pavlidis</span>, P. Chin and T. Block, <a href="conference%20papers/GaAsIC_2000_Darlington%20FB%20amplifier.pdf"> Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using <span class=SpellE>InAlAs</span>/<span class=SpellE>InGaAs</span> <span class=SpellE>heterojunction</span> bipolar transistors<span style='mso-fareast-font-family:°e0}fÔš'>,</span> </a> <i>22nd IEEE <span class=SpellE>GaAs</span> IC Symposium</i>, pp.259-262, 2000.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[54]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. Cui, D. <span class=SpellE>Sawdai</span>, S. Hsu, D. <span class=SpellE>Pavlidis</span><span class=GramE>, ,</span> P. Chin and T. Block,  <a href="conference%20papers/IPRM_2000_InGaAs_HBTs.pdf">High power performance using <span class=SpellE>InAlAs</span>/<span class=SpellE>InGaAs</span> single HBTs, </a> <i style='mso-bidi-font-style:normal'>1<span style='mso-bidi-font-style:italic'>2th IEEE&nbsp;Indium Phosphide and Related Materials (IPRM 00)</span></i>, Williamsburg, VA, May 15-19, pp. 473-476, 2000.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[55]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>D. <span class=SpellE>Buttari</span>, A. <span class=SpellE>Chini</span>, G. <span class=SpellE>Meneghesso</span>, E. <span class=SpellE>Zanoni</span>, D. <span class=SpellE>Sawdai</span>, D. <span class=SpellE>Pavlidis</span>, and S. Hsu,  <a href="conference%20papers/IPRM_2000_hole_impact_ionization.pdf">Hole impact ionization coefficient in (100)-oriented I<span style='mso-fareast-font-family: °e0}fÔš'>n<sub>0.53</sub>Ga<sub>0.47</sub>As, </span></a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'> </span><i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>12th IEEE Indium Phosphide and Related Materials (IPRM 00)</span></i><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:"Times New Roman";color:black'>, Williamsburg, pp. 258-261, May 2000.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.0pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.0pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[56]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, P.N. Tan, D. <span class=SpellE>Pavlidis</span>, E. Alekseev, N.X. Nguyen, C. Nguyen, and D.E. <span class=SpellE>Grider</span>, <a href="conference%20papers/isdrs99_frequency%20dependent%20output%20resistance.pdf"> Frequency dependent output resistance and <span class=SpellE>transconductance</span> in <span class=SpellE>ALGaN</span>/<span class=SpellE>GaN</span> MODFETs, </a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:°e0}fÔš; color:black'> </span><i><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>Proceeding of 1999 International Semiconductor Device Research Symposium (ISDRS)</span></i><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'>, Charlottesville, pp. 315-317, Dec. 1999.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpMiddle style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='font-family: "Arial","sans-serif";mso-fareast-font-family:Arial;color:black'><span style='mso-list:Ignore'>[57]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, D. <span class=SpellE>Sawdai</span>, and D. <span class=SpellE>Pavlidis</span>, <a href="conference%20papers/ARFTG_conference.pdf"> Modeling of highly-nonlinear HBT characteristics using a distributed thermal <span class=SpellE>subcircuit</span> derived from pulsed measurements, </a> <i>53rd ARFTG conference (MTT Symposium) Digest</i>, Anaheim, pp.139-145, June 1999.<o:p></o:p></span></p> <p class=MsoListParagraphCxSpLast style='margin-left:26.2pt;mso-add-space: auto;text-align:justify;text-justify:inter-ideograph;text-indent:-26.2pt; mso-list:l4 level1 lfo5'><![if !supportLists]><span style='mso-bidi-font-size: 10.0pt;font-family:"Arial","sans-serif";mso-fareast-font-family:Arial; color:black'><span style='mso-list:Ignore'>[58]<span style='font:7.0pt "Times New Roman"'>&nbsp;&nbsp; </span></span></span><![endif]><span style='font-family:"Arial","sans-serif"; mso-fareast-font-family:"Times New Roman";color:black'>S. Hsu, B. <span class=SpellE>Bayraktaroglu</span> and D. <span class=SpellE>Pavlidis</span>, </span><span style='font-family:"Arial","sans-serif"'> <a name="OLE_LINK63"></a><a name="OLE_LINK62"><span style='mso-bookmark:OLE_LINK63'></span></a><a href="conference%20papers/twhm98b_TSC_HBTs.pdf"><span style='mso-bookmark: OLE_LINK62'><span style='mso-bookmark:OLE_LINK63'>Comparison of conventional and thermally-stable <span class=SpellE>cascode</span> (TSC) <span class=SpellE>AlGaAs</span>/<span class=SpellE>GaAs</span> HBTs</span></span><span style='mso-bookmark:OLE_LINK62'><span style='mso-bookmark:OLE_LINK63'><span style='mso-fareast-font-family:°e0}fÔš'> </span>for </span></span><span style='mso-bookmark:OLE_LINK62'><span style='mso-bookmark:OLE_LINK63'><span style='mso-fareast-font-family:°e0}fÔš'>microwave power applications</span></span></span><span style='mso-fareast-font-family:°e0}fÔš'>, </span></a></span><span style='font-family:"Arial","sans-serif";mso-fareast-font-family:"Times New Roman"; color:black'> <i>Topical Workshop on <span class=SpellE>Heterostructure</span> Microelectronics for Information Systems Applications</i>, Kanagawa, Japan, Aug. 30-Sep. 2, pp. S3-6, 1998.</span><span style='font-size:10.0pt; mso-fareast-font-family:"Times New Roman";color:black'><o:p></o:p></span></p> <p class=style20 style='margin:0in;margin-bottom:.0001pt'><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span></p> </td> </tr> </table> <p><b><span style='font-size:10.0pt;font-family:"Arial","sans-serif"; color:#006600'>Last update: 09/06/2011&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; </span></b><span lang=ZH-TW style='font-family:"°e0}fÔš","serif";mso-bidi-font-family:°e0}fÔš'>0</span></p> </td> </tr> </table> </div> <p class=MsoNormal><span style='mso-fareast-font-family:"Times New Roman"'><o:p>&nbsp;</o:p></span></p> </div> </body> </html>