Refered Papers

(A1) 已發表期刊論文:

1.        Guey-Kai Ho and Hsin-Fei Meng, Chain-Shu Hsu, Sheng-Fu Horng, Lai-Cheng Chen, Shu-Mei Chang, Efficient white light emission in conjugated polymer homojunctions, Appl. Phys. Lett., 85 (20): 4576-4578 Nov. 15, 2004

2.        Zong-Long Li and Hsin-Fei Meng, Sheng-Fu Horng, Chain-Shu Hsu, Lai-Cheng Chen, Shu-Mei Chang, Strong red emission in conjugated polymer heterojunction, Appl. Phys. Lett., 84 (18): 3558-3560 MAY 3 2004.

3.        Z.L. Li, S.C. Yang, H.F. Meng_, Y.S. Chen, Y.Z. Yang, C.H. Liu, S.F. Horng, C.S. Hsu, patterning-free integration of polymer light-emitting diode and polymer transistor, Appl. Phys. Lett. 84 (17): 3558-3560, APR 26, 2004.

 

4.        Lin LC, Meng HF, Shy JT, Horng SF, Yu LS, Chen CH, Liaw HH, Huang CC, Peng KY, Chen SA, Comment on "Triplet-to-singlet exciton formation in poly(p-phenylene-vinylene) light-emitting diodes" – Reply, PHYSICAL REVIEW LETTERS, 92 (5): Art. No. 059702 FEB 6 2004

5.        C.C. Huang, H.F. Meng, G.K. Ho, C.H. Chen, C.S. Hsu, J.H. Huang, S.F. Horng, B.X. Chen, L.C. Chen, Color-tunable multi-layer light-emitting diodes based on conjugated polymers, APPL PHYS LETT 84 (7): 1195-1197 FEB 16 2004

6.        C.H. Liu1, K.L. Tzeng, H.F. Meng, S.F. Horng, Y.Z. Yang, M.F. Tzeng, Y.S. Chen, S.M. Chang, C.S.Hsu, C.C. Chi, One-polymer active pixel, APPL PHYS LETT 84 (4): 619-621 JAN 26 2004

7.        T. R. Tsai TR, C. C. Chi CC and S. F. Horng, Terahertz responses of high-resistivity YBCO thin films, PHYSICA C 391 (3): 281-288 SEP 1 2003

8.        Lin LC, Meng HF, Shy JT, Horng SF, Yu LS, Chen CH, Liaw HH, Huang CC, Peng KY, Chen SA, Comment on "Triplet-to-singlet exciton formation in poly(p-phenylene-vinylene) light-emitting diodes" – Reply, Phys. Rev. Lett. 91 (21): Art. No. 219703 NOV 21 2003

9.        Lin LC, Meng HF, Shy JT, Horng SF, Yu LS, Chen CH, Liaw HH, Huang CC, Peng GY, Chen SA, Triplet exciton formation ratio in poly(p-phenylene-vinylene) light-emitting diode, SYNTHETIC METALS 135 (1-3): 425-426 Part 1 Sp. Iss. SI APR 4 2003

10.    L.C. Lin, H.F. Meng, J.T. Shy, S.F. Horng, L.S. Yu, C.H. Chen, H.H. Liaw, C.C. Huang, K.Y., Peng, and S.A. Chen, Triplet exciton formation ratio in poly(p-phenylene-vinylene) light-emitting diode, Phys. Rev. Lett. 90 (3): art. no. 036601 JAN 24 2003

11.    C. C. Chi, H. D. Wang, S. S. Pai, W. C. Lai, S. F. Horng, and R. S. S. Huang, Fabrication and Characterization of Terahertz Photonic Crystals, Proc. SPIE vol. 4643, pp. 19-30,  Ultrafast Phenomena in Semiconductors VI, 24-25, 2002.

12.    洪勝富、齊正中，短脈衝雷射激發兆赫輻射技術及其應用，中華民國物理學會物理雙月刊，第二十六卷第二期，2001年(invited, 2001/4 刊出).

13.    Sheng-fu Horng,  Jun-Liang Li, Jian-Shen Yu, and C. C. Chi, Obervation of Terahertz Electric Pulses Generated by Nearly-Filled-Gap Nonuniform Illumination Exciation, Appl. Phys. Lett. 77: (24), pp3896-3898, 2000.

14.    Shi-Hsiang Lu and Sheng-fu Horng, A General Multi-Band Transfer-Matrix Formalism for Energy-Band Calculations of Two-Dimensional Structures, Jpn. J. Appl. Phys., vo. 39, pp. 2659-2664, pt. 1, No. 5A, 2000.

15.    Sheng-fu Horng, Jian-Shen Yu, Tsong-Ru Tsai, and C. C. Chi, Comparison of Well-Above-Bandgap and Near-Bandedge Transient Photoreflectance and Transmission Measurements of Low-Temperature-Grown GaAs, J. Optics and Quantum Electronics, vol. 32, pp. 573-584, 2000.

16.    Sheng-fu Horng, Shi-Hsiang Lu, Jun-Liang Li, Jian-Shen Yu, Tsong-Ru Tsai, and C. C. Chi, Observation of Intense Electric Pulses with 187 fs FWHM Generated by Nearly-Filled-Gap Nonuniform Illumination Excitation, Proc. SPIE, vol. 3795, pp. 493-500, 1999.

17.    洪勝富、齊正中，時間解析激發-探測技術 ，中華民國物理學會物理雙月刊，第二十四卷第五期，1998年(invited, 1998/10 刊出).

18.    Jian-Shen Yu, Sheng-fu Horng, and C. C. Chi, Well Above Bandgap Transient Photoreflectance Characterization of Low-Temperature-Grown GaAs, Jpn. J. Appl. Phys., vol. 37, No. 2, pt. 1, pp.554-559, 1998.

19.    J. S. Yu,  Y. S. Chang, J. N. Chen, T. R. Tsai, S. F. Horng, and C. C. Chi, Substrate Engineering of Picosecond Photoconductive Switches Based on Low-Temperature-Grown GaAs, J. Chinese Institute of Electrical Engineering, vol. 4, No. 3, pp 185-192, 1997.

20.    Jian-Shen Yu,  Hsin-Cha Ho, Sheng-fu Horng, and C. C. Chi, Spectral Dependence of Time-Resolved Photoreflectance of Low-Temperature-Grown GaAs, Jpn. J. Appl. Phys.,vol. 36,  pt. 1, 4A , pp2144-2150, 1997.

21.    Ching-Song Lin, Chrong-Jung Lin, Ping-Yu Kuei, Sheng-fu Horng, Charles Ching-Hsiang Hsu, and Ming-Chi Liaw, Quantum Size Effects in Photoluminescence from Si nanocrystals in PECVD Si-Rich-Oxide, Applied Surface Science, 113/114, 116-120. 1997.

22.    A. Chin, K. Lee, B. C. Lin, and S. Horng,  Picosecond photoresponse of carriers in Si ion-implanted Si, Appl. Phys. Lett. 69, 653, 1996.

23.    H. W. Yang, J. T. Hsieh,  S. F. Hong,  H. L. Hwang, Reduction of Etching Damage in the Fabrication of Quantum Wires, Materials Sci. Engr. B-Solid State Materials for Advabced Technology, Vol 28, Iss 1-3, pp 379-382, 1994.

24.    T. N. Horsky, G. R. Brandes, K. F. Canter, C. B. Duke, A. Paton, D. L. Lessor, A. Kahn, S. Horng, K. Stevens, and K. Stiles, Analysis of the Atomic Geometries of the (101-0) and (112-0) Surfaces of CdSe by LEED and LEPD, Phys. Rev. B 46, 7011, 1992.

25.    Y. Hirose, S. Horng, A. Kahn, C. Wrenn, and R. Pfeffer, Electron Beam Patterning of Epitaxial  and  / (100) GaAs, J. Vac. Sci. Technol. A10(4), 960, 1992.

26.    K. Young, A. Kahn, and S. Horng, Molecular Beam Epitaxial Growth of GaAs /  / GaAs Multilayer Structure, J. Vac. Sci. Technol. B10(2), 683, 1992.

27.    S. Horng, Y. Hirose, A. Kahn, C. Wrenn, and R. Pfeffer,   / (100) GaAs for epitaxial regrowth and electron-beam patterning,  Appl. Surf. Sci. 56-58, 855, 1992.

28.    S. Horng, A. Kahn, C. Wrenn, and R. Pfeffer, Growth of GaAs /  / (100) GaAs by Molecular Beam Epitaxy, Mat. Sci. and Engr., B9, 263, 1991.

29.    T. N. Horsky, G. R. Brandes, K. F. Canter, C. B. Duke, S. Horng, A. Kahn, D. L. Lessor, A. P. Mills, A. P. Mills, A. Paton, K. Stevens, K. Stiles, Observation of Difference between Low-Energy Electron-Diffraction and Positron-Diffraction Structural Determination of the Cleavage Faces of CdSe, Phys. Rev. Lett. 62, 1876, 1989.

30.    A. Kahn, K. Stiles, D. Mao, S. Horng, K. Young, J. McKinley, D. G. Kilday, and G. Margaritondo, Formation of Schottky Barrier on GaAs (110): From Adsirbate-Induced Gap States to Interface Metallicity. J. Electronic Materials, 18, 33, 1989.

31.    S. Horng and A. Kahn, Epitaxial Growth of Bi on (100) GaAs, J. Vac. Sci. Technol. B7, 931, 1989.

32.    S. Horng, K. Young, and A. Kahn, Structure Studies of (331) GaAs Surface, J. Vac. Sci. Technol., A, 7, 2039, 1989.

33.    K. Stiles, S. Horng, A. Kahn, J. McKinley, and G. Margaritondo, Trends in temperature-dependent Schottky barrier formation: The Ga/GaAs and Mn/GaAs Interfaces, J. Vac. Sci. Technol. B, 6, 1392, 1988.

(B). 已發表研討會論文

1.        Hsin-Fei Meng, Hua-Hsien Liao, Jow-Tsong Shy, and Sheng-Fu Horng, Triplet exciton formation in polymer light-emitting diode, Optical Probes in Conjugated Polymers and Biosystems, Jan. 4th - 8th 2005, in Bangalore, India (Invited)

2.        Chien-Hui Wang, Yu-Ching Liao, Sheng-fu Horng, Hsin-Fei Meng , Cheng-Chung Chi , Li-Chi Lin, An Improved Scheme to Extract Field-Dependent Mobility in Conjugated Polymer Light-Emitting Diodes and Related Devices, Optics 2004, Dec. 18-19, 2004, Chung-Li, Taiwan, ROC.

3.        Chien-Cheng Liu (劉建成), Chien-Hui Wanga (王千慧), Yu-Ching Liao (廖郁菁) , Sheng-fu Horng (洪勝富), Hsin-Fei Meng (孟心飛) , Cheng-Chung Chi (齊正中) , Li-Chi Lin (林立基), A closed-form Mott-Gurney type current-voltage equation for charge transport in semiconductive conjugated polymers with field-dependent mobility, 2005物理年會, Feb. 1-3, 2005, Kaohsiung, Taiwan, ROC.

4.        Bang-Yu Hsu (徐邦昱), Tsz-Yi Yang (楊子宜),Sheng-fu Horng (洪勝富), Cheng-Chung Chi (齊正中) , Characteristics of Terahertz Generation by Optical Rectification, International Photonics Conference, Dec. 12-14, 2003, Taipei, Taiwan, ROC. 

5.        Fu-Hsing Lin (林福星), Sheng-fu Horng (洪勝富) and Cheng-Chung Chi (齊正中), Characteristics of Terahertz Generation by Optical Rectification, Optics 2002, Dec. 12-14, 2002, Taipei, Taiwan, ROC

6.        Heidi Wang (王海蒂), Wei-Chi Lai (賴瑋治), Shi-Shy Pai (白世璽), Sheng-fu Horng (洪勝富) and Cheng-Chung Chi (齊正中), Fabrication and Characterization of Terahertz Photonic Crystals, 2001 Photonics Taiwan, Kaohsiung, Dec. 13-14, 2001. 

7.        Shi-Hsing Lu, Ju-Chung Chang, Sheng-fu Horng, and Cheng-Chung Chi, Pulsed Laser Excited Terahertz Generation from Semiconductors under Magnetic Field, International Photonic Conference, 12-15 December, 2000, Hsin Chu.

8.        Sheng-fu Horng and Cheng-Chung Chi, Untrashort Laser Pulse Excited Terahertz Generation, Topical Schools on Theory and Advanced Measurements on Novel Semiconductor Syetems, National Center for Theoretical Science, July 13-21, 2000. (invited).

9.        Z.-M. Wang (王志明), Sheng-fu Horng (洪勝富), and C. C. Chi (齊正中), Terahertz Photonic Crystals, 2000 Annual Meeting of the Chinese Physical Society, Tainan, January 29-30, 2000 .

10.    C. C. Chin, Peter, Z.-Y. Pan, C. C. Chi, Sheng-fu Horng, Y. S. Yang, S. S. Shen, and R. Hu, The Characterization of Radiation Beam Pattern and Fabrication of Superconducting Aluminum Hot Electron Bolometer Mixer, 4th European Conference on Applied Superconductivity, Sitges, Barcelona, Spain, 14-17, September, 1999.

11.  Sheng-fu Horng, Shi-Hsiang Lu, Jun-Liang Li, Jian-Shen Yu, Tsong-Ru Tsai, and C. C. Chi, Observation of Intense Electric Pulses with 187 fs FWHM Generated by Nearly-Filled-Gap Nonuniform Illumination Excitation, in Terahertz and Gigahertz Photonics, 1999 Annual Meeting of the International Society for Optical Engineering, Denver, Colorado, 20-23 July, 1999.

12.    Shi-Hsiang Lu(呂世香), Tsong-Ru Tsai(蔡宗儒), Sheng-fu Horng(洪勝富), and C. C. Chi (齊正中), Surface Conductivity of YBCO Characterized by Ultrashort-Laser-Pulse Excited Terahertz Generation, Optics and Photonics Taiwan'99, Chung-Li, December 16-17, 1999.

13.  Tsong-Ru Tsai, C. C. Chi, and Sheng-fu Horng, Terahertz Response of YBCO with and without Persistent Photoinduced Effects, 1999年台灣國際超導會議 /第六屆低溫物理研討會, 墾丁，17-21 August, 1999.

14.    Jian-Zhang Lin(林建璋), Jian-Shen Yu(尤建盛),  Tsong-Ru Tsai(蔡宗儒), Sheng-fu Horng(洪勝富),  and C. C. Chi(齊正中), The Effects of Wavelength, Annealing and Ion Dosage on the Ultrafast Photo-Response of As-Implanted GaAs, 1998 Electron. Devices  and Mater. Symposia, Tainan, December 20-23, 1998.

15.    Shi-Hsiang Lu(呂世香), Tsong-Ru Tsai(蔡宗儒), Sheng-fu Horng(洪勝富), and C. C. Chi (齊正中), Terahertz Generation from Semiconductors: A Novel Method of Material Characterization in the Millimeter and Submillimeter  Region, 1998 Electron. Devices  and Mater. Symposia, Tainan, December 20-23, 1998.

16.    Shi-Hsiang Lu(呂世香), Chun-Nan Chen(陳俊男), Tsong-Ru Tsai(蔡宗儒), Sheng-fu Horng(洪勝富), and C. C. Chi (齊正中), Substrate Engineering for Ultrafast Coplanar Transmission Lines, 1998 Electron. Devices  and Mater. Symposia, Tainan, December 20-23, 1998.

17.    Yi-Shu Chang(張義樹), Seng-Haung Tang(湯森煌), Tsong-Ru Tsai(蔡宗儒), Sheng-fu Horng(洪勝富), and C. C. Chi (齊正中), The Design, Fabrication, and Analysis of Ultrafast Low-Temperature-Grown GaAs Metal-Semiconductor-Metal  Photodetectors, 1998 Electron. Devices  and Mater. Symposia, Tainan, December 20-23, 1998.

18.     Sheng-fu Horng,  Jun-Liang Li, Jian-Shen Yu, Tsong-Ru Tsai, and C. C. Chi, Ultrashort Electric Pulses with 187fs FWHM Generated by Nearly-Filled-Gap Nonuniform Illumination, 1998 International Photonic Conference, Taipei, December, 15-18, 1998.

19.    Sheng-fu Horng,  Han-Jie Li, Jian-Shen Yu,  Tsong-Ru Tsai, and C. C. Chi, A Detailed Study of the Effect of Anealing on the Photo-Carrier Lifetime of Low-Temperature-Grown GaAs, 1998 International Photonic Conference, Taipei, December, 15-18, 1998.

20.    Shi-Hsiang Lu, Jen-Heng Wang,  Tsong-Ru Tsai, Sheng-fu Horng, and C. C. Chi, Ultrashort-Laser-Pulse Excited Terahertz Generation and Their Applications in the Characterization of Semiconductors and Superconductors, 1998 International Photonic Conference, Taipei, December, 15-18, 1998.

21.    Shi-Hsiang Lu, Shang-Jen Tseng,  Tsong-Ru Tsai, Sheng-fu Horng, and C. C. Chi, Spatial Profile of THz Beam Excited by Ultrashort Laser Pulses, 1998 International Photonic Conference, Taipei, December, 15-18, 1998.

22.    Sheng-fu Horng,  Jian-Shen Yu,  Tsong-Ru Tsai, and C. C. Chi, Comparison of Well-Above-Bandgap and Near-Bandedge Time-Resolved Photoreflectance and Transmission Measurements of Low-Temperature-Grown GaAs, 1998 International Photonic Conference, Taipei, December, 15-18, 1998.

23.    Cheng-Chung Chi, Sheng-fu Horng, Jian-Shen Yu, and Tsong-Ru Tsai,   Comparison of Transient Photo-Carrier Responses of Low-Temperature Grown GaAs by Time-Resolved Photo-Reflectance, Photo-Transmittance, and Photoconductivity, 1998 APS March Meeting, Los Angeles, March 16-20, 1998.

24.    Sheng-fu Horng, Cheng-Chung Chi, Jian-Shen Yu, and Tsong-Ru Tsai,   Transient Photo-Responses of GaAs Grown on Sapphire at Low Temperature, 1998 APS March Meeting, Los Angeles, March 16-20, 1998.

25.    Jian-Shen Yu, Tsong-Ru Tsai, Sheng-fu Horng, and Cheng-Chung Chi, Quantitative Characterization of Low-Temperature-Grown GaAs by Well-Above Bandgap Transient Photoreflectance, Photo-transmittance, and Photoconductive Responses, Int. Workshop on Femtosecond Technology, Tsukuba, Japan, Feb. 12-13, 1998.

26.    Jian-Shen Yu, Tsong-Ru Tsai, Sheng-fu Horng, and Cheng-Chung Chi, Pulse Shaping in Highly Biased Photoconductive Switches Based on Low-Temperature-Grown GaAs, Int. Workshop on Femtosecond Technology, Tsukuba, Japan, Feb. 12-13, 1998.

27.    Sheng-fu Horng, Jian-Shen Yu,  P. Y. Guei, T. R. Tsai,   and C. C. Chi, Measurement of Photo-Carrier Lifetime of Low-Temperature-Grown GaAs by Well-Above-Bandgap Pump-Probe Photoreflectance and Transmittance, The Science and Technology Seminar on Femtosecond Technology, Tokyo, Japan, Feb. 9-10, 1998 (invited).

28.    Shi-Hsiang Lu (呂世香), Tsong-Ru Tsai (蔡宗儒), Sheng-fu Horng (洪勝富), and C. C. Chi (齊正中), Terahertz Generation From Highly-Biased Large-Aperture Antenna Fabricated on GaAs, Opitcs and Optoelectronics / Taiwan'97, Hsin Chu, Dec. 11-12,  1997.

29.    桂平宇 和 洪勝富，"低溫成長砷化鎵之光激載子動態特性研究",國防科技研討會，中正理工學院，Nov. 21, 1997.

30.    J. S. Yu (尤建盛), T. R. Tsai (蔡宗儒), Sheng-fu Horng (洪勝富), and C. C. Chi (齊正中), Ultrafast Phenomena of GaAs Grwon on Sapphire at Low Termperature, 1997 Electron. Devices  and Mater. Symposia, Chung-Li, Nov. 20-21, 1997.

31.    Shi-Hsiang Lu (呂世香), Hsin-Ruei Li (李幸睿), Tsong-Ru Tsai (蔡宗儒), Sheng-fu Horng (洪勝富), and C. C. Chi (齊正中), Terahertz Generation From GaAs with Different Surface Treatment and Its Applications, 1997 Electron. Devices  and Mater. Symposia, Chung-Li, Nov. 20-21, 1997.

32.    陳建銘,黃清風,龔正, 洪勝富, The Qualitative Inquiry on the Relationship Betwen The Breakdown Voltage and LOCOS Dimensions For HIgh-Frequency High-Power Structureed MOS-Devices, 1997 Electron. Devices  and Mater. Symposia, Chung-Li, Nov. 20-21, 1997.

33.    Sheng-fu Horng, Jian-Shen Yu, P. Y. Guei, T. R. Tsai, and C. C. Chi, Consistent Photo-Carrier Lifetime Measurement of Low-Temperature-Grown GaAs by Well-Above-Bandgap Time-Resolved Photoreflectance, Phototransmittance, and Photoconductivity Response, Ultrafast Spectroscopy Workshop in Taiwan 1997, Institute of Atomic and Molecular Science, Academia Sinica, Taipei, Taiwan, Oct. 15, 1997.

34.    Jian-Shen Yu, P. Y. Guei, T. R. Tsai, Sheng-fu Horng,   and C. C. Chi, Extraction of  Photo-carrier Lifetime from Well-Above-Bandgap Transient Photoreflectance of Low-Temperature-Grown GaAs, First Conf. on Semiconductor Physics, National Taiwan University, Taipei, June 20-21, 1997.

35.    Sheng-fu Horng, Jian-Shen Yu, P. Y. Guei, T. R. Tsai, and Cheng-Chung Chi, Photo-carrier Lifetime and Dynamics of Low-Temperature-Grown GaAs, 第十五屆光譜技術與表面物裡研討會, 嘉義, 瑞里，July 20-22, 1997.

36.    Shi-Hsiang Lu, Hsin-Ruey Li, Tsong-Ru Tsai, Sheng-fu Horng, and Cheng-Chung Chi, Terahertz Generation from Semi-Insulating and Low-Temperature-Grown GaAs, 1997 物理年會,  台北, Jan. 28-29, 1997.

37.    Hsi-Hsiang Lu and Sheng-fu Horng, An Efficient and General Multi-band Transfer-Matrix Method for Energy-Band Calculation of Two-Dimensional Structures, Int. Electron. Devices  and Mater. Symposia, Hsinchu, Dec. 16-20, 1996.

38.    Jian-Shen Yu, Sheng-fu Horng, and C. C. Chi, Quantitative Characterization of Low-Temperature-Grown GaAs by Transient Photoreflectance Measurement, Int. Electron. Devices  and Mater. Symposia, Hsinchu, Dec. 16-20, 1996.

39.    Jian-Shen Yu, Yu-Shu Chang, Jun-Nan Chen, Sheng-fu Horng, and Cheng-Chung Chi, Substrate Effects on Picosecond Photoconductive Switches Based on Low-Temperature Grown GaAs, Int. Electron. Devices  and Mater. Symposia, Hsinchu, Dec. 16-20, 1996.

40.    Jian-Shen Yu, Jian-Zhang Lin, Sheng-fu Horng, and Cheng-Chung Chi, Dynamics of Transient Photoreflectance of As-Implanted GaAs, Int. Electron. Devices  and Mater. Symposia, Hsinchu, Dec. 16-20, 1996.

41.    Jian-Shen Yu, Yi-Shu Chang, Jun-Nan Chen, Tsong-Ru Tsai, Sheng-fu Horng, and C. C. Chi, Trailing Shoulder Reduction in Picosecond Photoconductive Switches Based on Low-Temperature-Grown GaAs, Photonics/Taiwan'96, Hsinchu, Dec. 12-13, 1996.

42.    Sheng-fu Horng, Jian-Shen Yu, and Cheng-Chung Chi, Observation of   Ultrafast Photo-induced Absorption in Low-Temperature-Grown GaAs, 第十四屆光譜技術與表面物裡研討會,梅山 啞口,July 20-22, 1996.

43.    A. Chin, K. Lee, W. J. Chen, Y. S. Zhang, S. Horng, and J. H. Kao,  Picosecond photoresponse of carriers in Si ion-implanted Si, 38th Electronic Materials Conference (EMC), Santa Barbara, CA, June 1996.

44.    Jian-Shen Yu,  Hsin-Cha Ho, Sheng-fu Horng, and Cheng-Chung Chi, Spectral Dependency of Ultrafast Transient Photoreflectance of Low-Temperature-Grown GaAs, 第四屆超快光學與光電子學研討會, 新竹, May 17, 1996.

45.    Jian-Shen Yu,  Hsin-Cha Ho, Sheng-fu Horng, and Cheng-Chung Chi, Spectral Dependency of Time-Resolved Photoreflectance of Low-Temperature-Grown GaAs, 1996 物理年會,  台中,Jan. 31-Feb. 1, 1996.

46.    Jian-Shen Yu, Jian-Zhang Lin, Yi-Shu Zhang, Hsin-Cha Ho, Sheng-fu Horng, and Cheng-Chung Chi, Measurement of Ultrafast Carrier Relaxation in Low-Temperature Grown GaAs and As-Implanted GaAs, 29th Seminar on Science and Technology-Optoelectronics, Tokyo, Feb. 1, 1996.

47.    Hsin-Cha Ho, Jian-Shen Yu, Sheng-fu Horng, and Cheng-Chung Chi, Spectroscopic Study of Photo-Induced Carrier Lifetimes in LT-GaAs and As-Implanted GaAs, 第十三屆光譜技術與表面物裡研討會, 溪頭, July 22-24, 1995。

48.    H. W. Yang, S. F. Horng, and H. L. Hwang, Fabrication of Quantum Wires by Wet etching Techniques, in Physics and Applications of Defects in Advanced Semiconductors, ed. M. O. Manasreh, H. J. von Bardeleben, G. S. Pomrenke, and M. Lannoo, Mater. Res. Soc. Proc. vol. 325, pp. 85-90, 1994.

49.    S. F. Horng, Quantum Semiconductor Devices, (invited talk, Short Course 2), 1993  Electron. Devices  and Mater. Symposia, Chung-Li, 1993.

50.    J. B. Yao, J. G. Chen, S. F. Horng, and J. S. Yu, Quantum Transport Measurements of GaAs/AlGaAs HEMT  Structures, 1993  Electron. Devices  and Mater. Symposia, Chung-Li, 1993.

51.    S. Horng, Y. Hirose, A. Kahn, C. Wrenn, and R. Pfeffer,   / (100) GaAs for epitaxial regrowth and electron-beam patterning, Int. Conf. Semiconductor Interfaces III, Rome, Italy, 1991.

52.    S. Horng, Y. Hirose, A. Kahn, C. Wrenn, and R. Pfeffer, Growth of GaAs /  / (100) GaAs by Molecular Beam Epitaxy, Heteroepitaxy of Dissimilar Materials, ed. R. F. C. Farrow, J. P. Harbinson, P. S. Peercy, and A. Zangwill, Mat. Res. Soc. Symp. Proc. 175, 221, 1991.

53.    S. Horng, A. Kahn, C. Wrenn, and R. Pfeffer, Growth of GaAs /  / (100) GaAs by Molecular Beam Epitaxy, Proc. Semiconductor Materials for Optoelectronic Devices and OEIC's, European Mat. Res. Soc., 1990.

54.    S. Horng, A. Kahn, C. Wrenn, and R. Pfeffer,  / (100) Ga As by Molecular Beam Epitaxy, Proc. Second Int. Conf. on Electronic Materials, Mat. Res. Soc., ed. R. P. H. Chang, M. Geis, B. Meyerson,  D. A. B. Miller, and R. Ramesh, 229, 1990.

55.    K. Young, S. Horng, A. Kahn, and J. M. Phillips, MBE growth of  on (100), (111), (511), and (711) GaAs Surfaces, Mat. Res. Soc. Symp. Proc. 148, 185, 1989.

·  (C). Books

  1. A. Kahn, K. Stiles, D. Mao, S. Horng, and K. Young, Metal-GaAs (100) Interfaces fromed at Low Temperature: From Adsorbate- to Metal-Induced Gap States, in Metalization and Metal-Semiconductor Interfaces, ed. by Inder P. Batra, Plenum Press, 1989.