Gong, Jeng (龔正)

Professor

Ph.D., University of Florida, Gainesville, USA, 1983

Semiconductor power devices

Electronic noise analysis

E-mail: jgong@ee.nthu.edu.tw

　

Dr. Jeng Gong received the BSEE degree from National Cheng Kung University, Tainan, Taiwan in 1975; and the MS and Ph.D. degrees in 1980 and 1983, respectively, from the University of Florida in Gainesville. He has been with the Department of Electrical Engineering of National Tsing Hua University since 1983, where he is currently a professor.

　

Recent publications

Journal Papers

  1. T. L. Hsu, J.Gong, and G.M.Hong, “A physical model of base resistance from low to high currents for arbitrarily doped submicrometer BJTs,” Solid-State Electronics Vol.39, No.7, pp1100-1103, 1996

  2. T.L.Hsu, J.Gong, “Frequency- and voltage-dependent degradation of polyemitter BJTs under AC stress”, Solid-State Electronics Vol.41, No.4, pp 607-612,1997.

  3. C.Y.Hsiang, H.H.Chen, S.H.Tseng, and J.Gong “The interface properties of ar-annealed nitrided oxides,” Journal of Material Science: Material in Electronics 9 pp 83-85, 1998.

  4. H.H.Chen, S.H.Tsrng, and J.Gong, “The temperature dependence of threshold voltage of N-MOSFETs with non-uniform substrate doping,” Solid-State Electronics Vol.42, No. 10, pp. 1799-1805, 1998.

  5. Yu Cheng, J.Gong, D.M.Liu, and H.Yee “The 1/f noise associated with electromigration in AlSiCu thin films,” Jpn. J. Appl. Phys. Vol. 38 pp291-292, 1999.

  6. T.Y.Huang, and J.Gong “A simple method to analyze the electrical properties of high power lateral double-diffused metal-oxide-semiconductor transistors,” Jpn. J. Appl. Phys. Vol. 38 ppL170-L173, 1999.

  7. G. M. Hong, J. Gong, S. C. Lu, and J. Y. Lin “The effect of bandgap narrowing and two dimensional grain on high-temperature properties of polysilicon-emitter bipolar junction transistors” Jpn. J. Appl. Phys. Vol. 38 pp4703-4708, 1999.

  8. T. L. Hsu, D. D. L. Tang, and J. Gong “Low-frequency noise properties of dynamic-threshold (DT) MOSFET’s” IEEE EDL Vol. 20, No. 10, pp532-534, 1999.

  9. G. M. Hong, J. Gong, and S. C. Lu “A general method of characterizing base resistance of bipolar junction transistors” Jpn. J. Appl. Phys. Vol. 39 pp438-441, 2000.

Conference Papers

  1. J.C.Wang, J.Gong, and A.M.Lee, “Analyzing the stability of CMOS crystal oscillator with equivalent complex impedance,” Proceedings of the 7th VLSI Design/CAD Symposium, pp297-300, 1996

  2. S.H.Lin, J.Gong, T.F.Wu, and A.M.Lee. “Research on electronic ballast control IC” Proceeding of the 18th Symposium on Electrical Power Engineering, pp. 763-767, 1997.

  3. 王右武，黃宗義，龔正，徐清祥，張家榮，”Analyzing the dynamic characteristics of insulated gate bipolar transistors”, Proceedings of Electronic Devices and Material Symposium, pp. 44-47,1997.

  4. 童建勳，龔正，”Analyzing simultaneous switching noise with micro-strip line model and histogram analysis”, Proceedings of Electronic Devices and Material Symposium, pp 52-55, 1997.

  5. 陳建銘，黃清風，龔正，洪勝富，”The qualitative inquiry on the relationship between the breakdown voltage and LOCOS dimensions for high-frequency high-power structured MOS-devices”, Proceedings of Electronic Devices and Material Symposium, pp. 85-88, 1997.

  6. 李鈞道，李育穗，葉淑卿，蘇翔，龔正，”Capacitively coupled silicon strip detectors with double-sided readout”, Proceedings of Electronic Devices and Material Symposium, pp. 283-285, 1997.

  7. 溫仙智，葉淑卿，龔正，”Development of silicon pixel detectors”, Proceedings of Electronic Devices and Material Symposium, pp. 286-288, 1997.

  8. 陳建忠，黃榮生，王欽戊，郭信成，龔正，連振炘，徐清祥，”旁路與互補式IGBT結構之SPICE模擬”, Proceedings of Electronic Devices and Material Symposium, pp. 459-462, 1997.

  9. Y.L.Liu, and J.Gong, “Development of high speed circuits for pixel detectors in high energy particle colliders,” Proceedings of the 9th VLSI Design/CAD Symposium, pp119-122, 1998.

  10. C.H.Yen, and J.Gong, “Stability analyses and optimization of 0.6μm CMOS VCO with synchronized ring oscillators,” Proceedings of the 9th VLSI Design/CAD Symposium, pp127-130, 1998.

  11. Y. C. Li, and J. Gong, “Analysis of Si substrate coupling noise,” Proceedings of the10th VLSI Design/CAD Symposium, pp297-300, 1999.

  12. T. T. Liu, and J. Gong, “Low voltage bandgap reference circuit,” Proceedings of the 10th VLSI Design/CAD Symposium, pp301-304, 1999.

  13. 黃志堅，龔正 “互補式金氧半功率因數修正器積體電路之研製”，第二十屆電力工程研討會論文集， pp. 197-201，1999.

  14. H. J. Lee, T. Y. Tseng, and J. Gong “The annealing effects and electrical noise of Ba(Ti1-xSnx)O3 thin films”, Proceedings of Electronic Devices and Material Symposium, pp. 61-64,1999.

  15. Z. H. Zhang, T. Y. Huang, and J. Gong “The extraction of parasitic device parameters in IGBT”, Proceedings of Electronic Devices and Material Symposium, pp. 125-128,1999.

  16. Y. K. Su, and J. Gong, “A novel DC method for simultaneously determining the bias-dependent base and emitter resistance of bipolar junction transistors”, Proceedings of Electronic Devices and Material Symposium, pp. 227-230,1999.

  17. M. K. Lee, H. C. Lee, M. C. Fan, R. H. Horng, D. S. Wuu, and J. Gong, “Preparation of BaTiO3 thin films by metal organic chemical vapor deposition”, Proceedings of Electronic Devices and Material Symposium, pp. 269-272, 1999.

  18. Y. K. Su, and J. Gong, “Impact ionization induced avalanche multiplication effect and early effect in the selectively implanted collector (SIC) n-p-n bipolar junction transistors”, Proceedings of Electronic Devices and Material Symposium, pp. 521-524, 1999.