Hwang, Huey-Liang (黃惠良)

Dr. Huey-Liang Hwang received the B.S.E. and M.S.E. degree in Electrical Engineering from National Cheng Kung University ,Tainan, Taiwan , ROC in 1969 and 1971, respectively. In 1976 he was awarded the Ph.D degree from Brown University, Providence R.I., USA. Since then he joined the faculty of the Electrical Engineering Department of National Tsing Hua University, Hsin-chu,Taiwan. His research areas include Giant Area Microelectronics (solar cells, displays, medical imaging devices and etc.) and ULSI. He was a pioneer researcher in Ternary Chalcopyrite Semiconductors and he has published more than 320 papers in scientific journals and conference proceedings. He was the Conference Chairmen of the first International Symposium on Electronic Devices and Materials(1980), Non-stoichiometry in Semiconductors(1991), 7th International Conference on Solid Films and Surfaces (1994) and 12th International Conference on Ternary and Multinary Compounds(2000).

Dr. Hwang was elected Fellow of IEEE in 1994 for "contributions in fundamental understanding of photovoltaic and semiconductor materials and devices", he was elected Fellow of Nation Science Council of Republic of China for his distiguished research in 1976, he was also elected Fellow of American Vacuum Society in 1998 for "contributions for pioneering and sysmatical work on thin film photovoltaic materials and the fundamental understanding of hydrogenated Si films".　amental understanding of hydrogenated Si films".　Dr. Hwang was elected Member of Asia Pacific Academy of Materials (APAM) in 1998, and in 2000 he was elected　Vice President of APA

Dr. Hwang was the founders of the Electrical Engineering Departments of National Tsing Hua University and National Chung Hsing University, Tze-chiang Foundation of Science and Technology (the most re-nowned　tional Tsing Hua University and National Chung Hsing University, Tze-chiang Foundation of Science and Technology (the most re-nowned　 semiconductor engineers training center in Taiwan), and Cando Corp. in Hsin-Chu Science Industrial Park (Cando is the wld front ranking　d front ranking　 manufacturer in ITO, Color Filter , LCD projector lens, DWDM Filter and etc.). He was the Visiting Professors of University of Stuttgart, Tokyo University, Danish Technical University, Stanford Univesity and Hong Kong University of Sciee and Technology (HKUST), and since 2000, he became an adjunct Professor of HKUST.

1. “Modification of Surface and Bandgap on Sb-incoporated CuInSe2 Thin Films by (NH₄)₂S_X Sulfurization”, Appl. Surf. Sci. 123/124 (1998) 603

2. “Comments on surface Studies and Surface Alternation of CuInSe₂ Polyorystalline Thin Films”, Jap. J. Appl. Phys. 39 (2000) Suppl. 39-1, 379.

3. “New Perspectives of Defect Physics and Defect Chemistry for Copper Ternary Chalcopyrite Semiconductors”, Jap. J. Appl. Phys. 39 (2000) Suppl. 39-1, 399.

4. “Study on High Density Erasable Optical Discs Based on Ag-In-Sb-Te Optical Phase Change Recording Material”, Jap. J. Appl. Phys. 39 (2000) Suppl. 39-1.

5. “High Substrate-Temperature (450-600℃) Fabrication of CuIn(S, Se)₂ Thin Films Using Hybrid Reactive Sputtering / Sulfurication Method”, Jap. J. Appl. Phys. 39 (2000) Suppl. 39-1, 168.

6. “Properties and Reliability of ultra-thin Oxides Grown on Four Inch Diameter Silicon Wafers by Microwave Plasma Afterglow Oxidation” J. Vac. Sci. Tech. 16(5) (1998) 2712

7. “A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors”, Jpn. J. Appl. Phys. 37(1998) L1-L3.

8. “Two Snapback Voltage Model of NMOS(N-Channel Metal-Oxide-Semiconductor) Transistors During HBM(Human Body Model)ESD(Electro-Static-Discharge ) Zapping”, J. Appl. Phys.(Submitted)

9. “Studies on Low Temperature Facetting Growth of Polycrystalline Silicon Thin Films by ECR-CVD Downstream Plasma with Different Hydrogen Dilution”, Appl. Surf. Sci. 142 (1999) 316.

10. “Electrical and Structural Properties of Low Temperature Boron-and Phosphorus-doped Polycrystalline Silicon Deposited by Electron-Cyclotron-Resonance Plasma Chemical-Vapor-Deposition”, Appl. Surf. Sci. 142 (1999) 400.

11. “Studies on Reliablity and Trap Properties of Ultra-thin Silicon Oxide (3-5 nm) Grown by Microwave Plasma Afterglow at the Low Temperature Using Mixtures of O₂ and N₂O”, J. Non-Cryst. Solids, 2000 (in press). Also presented in 2^nd Int. Conf. On Insulating Crystalline and Amorphous Thin Films, Hong Kong, Oct. 1998 (Invited)

12. “Improvement on Properties and Reliability of Ultra-thin Silicon Oxide (3-5 nm) Grown by Microwave Plasma Afterglow at the Low Temperature Using Mixtures of O₂ and N₂O”, Appl. Surf. Sci. 142 (1999) 322. Also presented in 5^th Int. Conf. On Solid Integrated Circuit Technology, Beijing, Oct. 1998 (Invited)

13. “Adjustable Emissions from Silicon-Rich Oxide Films Prepared by Plasma-enhanced Chemical-Vapor-Deposition”, Appl. Phys. Lett. Vol. 74, No. 16 (1999) 2316.

14. “An Analytical Model of H.B.M. (Human Body Model) ESD (Electro-Static Discharge) Current Distribution and Novel ESD protection Structure “Jpn. J. Appl. Phys. Vol. 38 (1999) 4632.

15. “The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability”, Jpn. J. Appl. Phys. 39(2A)(2000)46.

16. “Method of Reducing the Pattern Effect and TED Effect by In-Situ Poly Deposition at Wafer Backside Before Rapid Thermal Processing”, IEEE Trans. Electron Devices (submitted).

17. “A Simple Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge Without Sacrificing the Performance in Dual Gate Oxide Process”, Jpn. J. Appl. Phys. 38 (1999) L1287.

18. “A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors”, Jpn. J. Appl. 37 (1998) L1.

19. “A New Operation Mode to Eliminate the Flash Cell Program/Erase Cycling With Window Close”, IEEE Electron Device Letters (submitted).

20. “The White Electroluminescence from a-SiNx:H Thin Films” Appl. Phys. Lett. (Submitted).

21. “Origin of Photoluminescence in Hydrogenated Amorphous Silicon-rich Nitride and Oxynitride Thin Films”, Phy. Rev. B (Submitted).

22. “Cavity-induced Modifications of the Photoluminescence and Synchrotron Radiation Luminescence Excitation Spectra in the a-SiO_xN_y:H Thin Films”, Appl. Phys. Lett. (Submitted).

23. “Feasibility Study of Copper Film Deposition by Photo-Assisted Chemical Vapor Deposition”, J. Vac. Sci. Tech. (Submitted).

24. “A Novel Design of a-Si:H Photodetector with Stacked Ferroelectric Capacitor Layer for X-Ray Detection in Medical Imaging Applications”, Solid State Electronics (Submitted).

25. “Outlook for Photovoltaic Developments in Taiwan”, Progress in Photovoltaics 6 (1998) 201

26. “Damage-free Photon-assisted Cryoetching of GaAs”, 1997 MRS Spring Meeting, San Francisco, CA, U.S.A. (Mar. 31-Apr. 4, 1997)

27. “Surface Etching of InP(100) by Chlorine”, Surf. Sci. 418 (1998) 46

28. “Adsorption and Decomposition of H₂S on InP(100)”, J. Physical Chem. 103(1999)3663.

29. “Damage-free Photo-assisted Cryogenic Etching of GaN As-evidenced by Reduction of Yellow Luminescence”, MRS Internet J. Nitride Semicond. Res. 4S1, (1999) G10.6.

30. “Photoluminescence Study on Threading Dislocations in GaN Revealed by Selective Photoelectrochemical Etching”, Electrochemical and Solid State Electronics Letters, 3(8) 2000.

31. “Photoelectrochemical Etching of In_xGa_1-xN”, Appl. Phys. Lett. 76(26)(2000)3917.

32. “Photoelectrochemical Etching of In_xGa_1-xN”, Electrochemical Soc. Meeting Symp. G1 on III-V Nitride Materials and Devices, Abstract Vol. 99-2, Abstract No. 761. Hawaii, Oct. 1999, Solid State Electronics (submitted).

33. “A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN”, MRS Internet J. Nitride Semicond. Res. 5S1, W11.73(2000).

34. “Defect Depth Profiling Using Photoluminescence and Cathodoluminescence Spectroscopy : The Role of Orygen on Reactive Ion Beam Etching of GaN in O₂/Ar Plasmas”, Appl. Surface Science 2000 (in press).

35. “Sputtering Effects of Ion Beams on the GaN Surface”, Appl. Phys. Lett. (Submitted).

36. “Etching Techniques for the Realization of Semiconductor Devices Based on III-V Nitrides”, Solid State Electonics (Submitted).

1. “Formation of High Bandgap CuIn(S,Se)2 Alloys from CuInSe2 Thin Film by a Simple (NH4)2Sx Immersion”, 11th Int. Conf. on Ternary and Multinary Compounds, Salford, UK (Sep. 1997); Inst. Phys. Conf. Ser. No. 152: Section B: Thin Film Growth and Characterization (1998) 245

2. “Growth and Characterization of Thin Films by Reactive Sputtering”, Proc.11th International Conference on Ternary and Multinary Compounds, (Sep.1997) ; Inst. Phys. Conf. Ser. No. 152: Section B: Thin Film Growth and Characterization (1998) 321

3. “Photoluminescence in Thin Films Grown by Molecular Beam Epitaxy”, Proc.11th International Conference on Ternary and Multinary Compounds, (Sep.1997) Inst. Phys. Conf. Ser. No. 152: Section C: Photoluminescence (1998) 461

4. “Review on Studies of Ternary Chalcopyrite Thin Films: (1) Thin Films made by Flash Evaporation; (2) Thin Films made by MBE; (3) Thin Films made by Sputtering”, Int. Workshop on The Technology of Thin Films Fabrication for Photovoltaic Solar Cells, Bali, Indonesia, Jan 6-8, 1998 (Special Invited Lecture)

5. “Explore into Twenty-first Century in Ternary Compounds”, 平成10年度三元多元機能性研究會講演(1998 Workshop on Ternary and Multinary Compounds), Osaka, Japan, Dec. 11-12, 1998 (Keynote Speech)

6. “A New Method to Predict Defect Concentration in Compound Materials”, Proc. 1999 EDMS, 489.

7. “Studies on Second Phase Cu-Se Formation of CuInSe₂ Thin Films Essential for Photovoltaic Efficiency Enhancement Using ADXRF, XPL and EXAFS” 10^th Int. Conf. on Solid Films and Surfaces, Princeton, July 9-13, 2000.

8. “The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250℃”, 1997 MRS Spring Meeting, San Francisco, CA, U.S.A. (Mar. 31-Apr. 4, 1997)

9. “Study on the Reliability of Ultrathin Oxide Grown in 4-inch Silicon Wafers by Microwave Plasma Afterglow Oxidation”, 1997 MRS Spring Meeting, San Francisco, CA, U.S.A. (Mar. 31-Apr. 4, 1997)

10. “Effect of Annealing of Epitaxial Ge Overlayers on Si(001) Surface Studied by LEED and AES”, 6th Int. Conf. on the Formation of Semiconductor Interfaces, Cardiff, UK (June 1997)& Proc. IEDMS(1996)305.

11. “Grain Formation Mechanism of ECR-CVD Low Temperature Polycrystalline Silicon Thin Films with Hydrogen Dilution Method”, Proc.1997Electronic Devices and Materials Symp. (1997)413

12. “Study on The Low Temperature Polycrystalline Silicon Thin Film Transistors”, Proc.1997 Electronic Devices and Materials Symp.(1997)367

13. “Improvement on The Electrical Properties of in -Situ Phosphorous Doped Hydrogenated Polycrystalline Silicon Thin Films Grown by Low Temperature ECR-CVD”, Proc. 1997 Electronic Dvices and Materials Symp.(1997)405

14. “Study and Fabrication of Contact Structure”, Proc. 1997 Electronic Devices and Materials Symp.(1997)469

15. “Property and Reliability Study on Ultra-Thin Oxide(3-5nm)Grown by Microwave Plasma Afterglow Oxidation at Low Temperature in The Mixtures of N2O and O2“, Proc. 1997 Electronic Devices and Materials Symp.(1997)78

16. “Fabrication and Reliability Study of Contact Structure”, Proc. 1998 VLSI Multilevel Interconnection Conference (to appear). Also presented in Proc. 1998 Int. Electron Dev. Mat. Symp. AP-29 p. 247

17. “A Novel Design of a-Si:H X-ray Detectors and Signal Read-out Circuit for 2-D Medical Imaging Application”, MRS Spring Meeting & Proc. 1998 Int. Electron Dev. Mat. Symp. D1-9 p. 314

18. “Method of Reducing the Pattern Effect and TED Effect by In-Situ Poly Deposition at Wafer Backside Before Rapid Thermal Processing”, 1^st International Symposium on ULSI Process Technology, (1999) Hawaii.

19. “An Analytical Model of HBM ESD Current Distribution and Modified ESD Protection Struture”, IEPA 1999, Singapore, 284.

20. “The Effects of Inter-Metal-Dielectrics on Gate Oxide Instability of MOS Devices”, IEDMS 1992, Taipei. Post 49.

21. “Intense UV-visible-IR Adjustable Photoluminescence from Silicon-rich Oxynitride Layers Prepared by Plasma Enhanced Chemical Vapor Deposition”, Symposium E Advanced Lumicescent Materials, 1999, MRS Spring Meeting.

22. “The Strong Blue-shifted Photoluminescence from Amorphous Silicon-Nitride (a-SiNx:H) Layers Prepared by PECVD Method”, Symposium U1 Advanced Lumicescent Materials, Electrochemical Society, Joint International Meeting, Honolulu, Hawaii, 1999 Oct. 17-22.

23. “Advanced Integrated Process and ESD Protection Structure to Optimize the GOI, HCE and ESD Performance for Sub-Quarter Micron Technology”, Conf. on Advanced Microelectronic Processing Techniques of SPIE International Symp. on Microelectronics and Assembly, Nov. 2000, Singapore (Invited) p. 56.

24. “The Mechanism of Instability on Device’s Characteristics due to Inter-metal Dielectrics with Low-k Material and the Modified Process”, Conf. on Advanced Microelectronic Processing Techniques of SPIE International Symp. on Microelectronics and Assembly, Nov. 2000, Singapore, 2000, p. 184.

25. “Optical and Structural Properties of Hydrogenated Amorphous Silicon-rich Nitrode Thin Films”, 10^th Int. Conf. on Solid Films and Surfaces, Princeton University, July 9-13, 2000.

26. “Thin Film Photovoltaics”, Taipei Int. Symp. On Recent Trends in Technological Developments, Taipei, June 1997

27. “Review on Photovoltaic Developments in Taiwan”, Proc. 3^rd World Conf. On Photovoltaic Energy Conversion, Wien, Australia, 1998

28. “Photovoltaic Development and Industry in Taiwan”, General Assembly and Fourth APAM Topical Seminar on Materials for Non-Trachtional Energy Generation and Energy Storage and Saving Devices, Seoul, 3-5 Sep. 2000.

29. “Damage-Free Photo-assisted Cryogenic Etching of GaN”, Proc. 1998 Int. Electron Devices and Materials Symp., B1-5 p.22

30. “Damage-free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN”, 第十六屆光譜技術與表面科學研討會論文集, 1997, p. 16.

31. “Damage-free Photoassisted Cryogenic Etching of GaN”, 1998 IEDMS, Dec. 20-23, 1998, B1-5, p. 22.

32. “Photoluminescence Study on Etch Damage Induced by Photoelectrochemical etching of GaN:A near Damage-free Etching Process”, Proc. 1999 EDMS, 485.

1. “Design and Construction of a Gas-Assisted-Solidification System for Polycrystalline Si Crystal Growth”, R.O.C. Patent No. 23422, 1985 (十五年新發明專利)

2. “一種低溫下成長多晶薄膜在二氧化矽及玻璃基板上之材料及製備方法” (中華民國十五年新發明專利號碼082623).

3. “The Process to Improve Uniformity during RTA by Deposition of In-Situ Poly on Wafer Backside” (美國專利號碼09/148,563, 中華民國專利號碼87111143, 1998).

4. “New ESD Protection Device Structure and Process with High Tilt Angle” (美國專利號碼09/252,630 ,中華民國專利號碼87109013).

5. “光筆式數位電子幕系統” (“Light-Pen Based Digital Board System”), Patent filed 2000(USA, ROC, Japan).

6. “應用於光筆式數位電子幕的非晶矽/非晶矽鍺紅外光位置偵測器” (“Amorphous Si / Amorphous SiGe Position Sensitive Detectors for Infrared Light-Pen Based Digital Boards”), Patent filed 2000(USA, ROC, Japan)

7. “位置偵測器之線性量測系統暨技術” (“System and Technique for Linearity Measurement of a Paosition Sensitive Detector”), Patent filed 2000(USA, ROC, Japan).

8. “網路購物之光筆輸入系統” (“Light-Pen Based Access System to the E-Commerce”), Patent filed 2000(USA, ROC, Japan).

9. “智慧型醫用書寫系統” (“Intelligent Light-Pen Based Digital Board Medical System”), Patent filed 2000(USA, ROC, Japan).

10. “智慧型銀行光筆式輸入系統” (“Intelligent Light-Pen Based Digital Board Banking System”), Patent filed 2000(USA, ROC, Japan).

1. “自動控制”，三民書局 (1972)

2. “Solar Energy”，圖文出版社 (1985)

3. “積體電路元件”，國科會重點科技叢書 (1990)

4. “點石成金”，大眾科學講座專輯地十四輯, pp.49, 國立台灣科學教育館編印 (1994)

5. “微電子工程”，國立編譯館主編，五南圖書公司(2000)

6. “Special Topics on Process Technologies for Deep Submicron Devices” (World Scientific Publisher 2001) Editor: H. L. Hwang

7. “Advance in Ternary Chalcopyrite Semiconductors” (Cambridge University Press 2002) Author: H. L. Hwang

1. “Energy Problem Solving by Thin Films Photovoltaics”, APAM Topical Seminar on Asian Priorities in Materials Development, Hsinchu, Taiwan, Dec. 18-19, 1998 (Invited)

2. “低溫多晶矽薄膜電晶體的發展”, Solid State Technology半導體科技, 2000液晶平面顯示器專輯 (2000) 24-29.