Professor

Ph.D. Physics, Wayne State University, USA, 1979

Semiconductor Materials and Devices,

VLSI Process

E-mail:fshuang@ee.nthu.edu.tw

Dr. Fon-Shan Hunag received her Ph.D. degree in Physics form Wayne State University. In1980, she joined the Department of Electrical Engineering at Tsing Hua University andhas been working on spin glass, amorphous Si devices, Si doping in GaAs, GaAs MESFET, and Ultra-thin oxynitride. Currently, she is a professor and engaged in the development of silicide technology, barrier metal, and multilevel metallization.

1. W.H. Hsu , C.C. Tu , W.S. Chen , F.S. Huang “A fabrication process of self-aligned TaSix Gate GaAs MESFET” Jpn. J. Appl. Phys. Vol.35, 2578 (1996).
2. Feng-Lin Jeng , Jiann-Ruey Chen , Bor-Yir Chen , and Fon-Shan Yeh,”Simulation for the microcrystalline silicon thin film transistors by considering the change of acceptor-like state and microcrystal grain size effect” (1997) J. J. A. P. , 36 , 4246
3. L.S. Wang , F.S. Huang , and M.S. Lin , ”Quantitative study of charge-to breakdown of thin gate oxide for a P⁺-poly-Si MOS capacitor”. Joural of the Electrochemical Society. (1997) Vol. 144 , 2 , 698 and Vol. 144 , 5 , 1890.
4. L.P. Wang , A. Chuang , L.T. Lin , F.S. Huang , K. Perng and J. Hwang , “Effect of Ar sputtering pretreatment on the electromigration resistance in Al-Cu/TiN /Ti interconnects” Mat. Res. Soc. Symp. Proc. Vol. 516,103 (1998)
5. L.P. Wang , A. Chuang , C.D. Chang , F.S. Huang , and J. Hwang , “Qriented wedge-like hillocks on Al 0.5wt% Cu/TiN/SiO₂/Si multilayer structure” (2000) Thin Solid Films,358,292

1. Y. C. Chuang, Y. J. Guo, and F. S. Huang, "Effect of pretreatment on microstructure and electromigration of Al-Cu Alloy", (1996), Mat. Res. Soc. Sym., Boston, U. S.A.